JP2006186343A5 - - Google Patents

Download PDF

Info

Publication number
JP2006186343A5
JP2006186343A5 JP2005346794A JP2005346794A JP2006186343A5 JP 2006186343 A5 JP2006186343 A5 JP 2006186343A5 JP 2005346794 A JP2005346794 A JP 2005346794A JP 2005346794 A JP2005346794 A JP 2005346794A JP 2006186343 A5 JP2006186343 A5 JP 2006186343A5
Authority
JP
Japan
Prior art keywords
semiconductor device
memory
circuit
antenna
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005346794A
Other languages
English (en)
Japanese (ja)
Other versions
JP4712545B2 (ja
JP2006186343A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005346794A priority Critical patent/JP4712545B2/ja
Priority claimed from JP2005346794A external-priority patent/JP4712545B2/ja
Publication of JP2006186343A publication Critical patent/JP2006186343A/ja
Publication of JP2006186343A5 publication Critical patent/JP2006186343A5/ja
Application granted granted Critical
Publication of JP4712545B2 publication Critical patent/JP4712545B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005346794A 2004-11-30 2005-11-30 半導体装置 Expired - Fee Related JP4712545B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005346794A JP4712545B2 (ja) 2004-11-30 2005-11-30 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004347754 2004-11-30
JP2004347754 2004-11-30
JP2005346794A JP4712545B2 (ja) 2004-11-30 2005-11-30 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011009521A Division JP5216876B2 (ja) 2004-11-30 2011-01-20 通信システム及び通信方法

Publications (3)

Publication Number Publication Date
JP2006186343A JP2006186343A (ja) 2006-07-13
JP2006186343A5 true JP2006186343A5 (enExample) 2008-12-11
JP4712545B2 JP4712545B2 (ja) 2011-06-29

Family

ID=36739183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005346794A Expired - Fee Related JP4712545B2 (ja) 2004-11-30 2005-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JP4712545B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5179858B2 (ja) 2007-01-06 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
US7875881B2 (en) * 2007-04-03 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP6315583B2 (ja) * 2014-09-04 2018-04-25 国立研究開発法人産業技術総合研究所 不揮発性メモリ及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5786827A (en) * 1995-02-21 1998-07-28 Lucent Technologies Inc. Semiconductor optical storage device and uses thereof
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法
JP2004268203A (ja) * 2003-03-10 2004-09-30 Japan Science & Technology Agency ナノ構造を有する機能材料、その製造方法及びそれを用いたフレキシブル超高密度メモリ
CN100365815C (zh) * 2003-05-09 2008-01-30 松下电器产业株式会社 非易失性存储器及其制造方法

Similar Documents

Publication Publication Date Title
TW556192B (en) Non-volatile memory
CN102479542B (zh) 具有多层单元(mlc)数据存储能力的磁性存储单元
CN106876398B (zh) 含横向尺寸改变吸收缓冲层的铁电存储单元及其制造方法
US8085583B2 (en) Vertical string phase change random access memory device
ATE493762T1 (de) Nichtflüchtige speicherzelle mit einem schaltbaren widerstand und transistor
JP2004006877A (ja) 追記型メモリで使用するための異方性半導体シート
US9437777B2 (en) Semiconductor device with antenna and light-emitting element
WO2005109522A3 (en) Magnetoresistive memory soi cell
US10789992B2 (en) Non-volatile memory with capacitors using metal under pads
KR102132650B1 (ko) 열 내성 강화 고정 층을 갖는 반도체 소자
KR20170104355A (ko) 다중 스택 증착을 이용한 스핀 전달 토크에 이용 가능한 자기 접합을 제공하는 방법 및 시스템
ATE525706T1 (de) Datenspeichereinrichtung
US11508654B2 (en) Non-volatile memory with capacitors using metal under signal line or above a device capacitor
US9934836B2 (en) Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
JP2006186343A5 (enExample)
JP2005182551A5 (enExample)
RU2008107998A (ru) Доступ к памяти
ATE528762T1 (de) Schneller remanenter resistiver ferroelektrischer speicher
US8248845B2 (en) Magnetic storage cell
JP5402088B2 (ja) 表示機能付きｉｃ媒体
US12355167B2 (en) Connection designs for memory systems
JP2006191001A5 (enExample)
JP2006156969A5 (enExample)
TWI234279B (en) Dual-bit memory cell structure of flash memory