JP2006186331A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2006186331A
JP2006186331A JP2005341420A JP2005341420A JP2006186331A JP 2006186331 A JP2006186331 A JP 2006186331A JP 2005341420 A JP2005341420 A JP 2005341420A JP 2005341420 A JP2005341420 A JP 2005341420A JP 2006186331 A JP2006186331 A JP 2006186331A
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JP
Japan
Prior art keywords
film
insulating film
connection hole
porous insulating
semiconductor device
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Withdrawn
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JP2005341420A
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English (en)
Japanese (ja)
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JP2006186331A5 (Direct
Inventor
Masafumi Morisue
将文 森末
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005341420A priority Critical patent/JP2006186331A/ja
Publication of JP2006186331A publication Critical patent/JP2006186331A/ja
Publication of JP2006186331A5 publication Critical patent/JP2006186331A5/ja
Withdrawn legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005341420A 2004-11-30 2005-11-28 半導体装置の作製方法 Withdrawn JP2006186331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005341420A JP2006186331A (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004347810 2004-11-30
JP2005341420A JP2006186331A (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006186331A true JP2006186331A (ja) 2006-07-13
JP2006186331A5 JP2006186331A5 (Direct) 2008-12-18

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Family Applications (1)

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JP2005341420A Withdrawn JP2006186331A (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

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JP (1) JP2006186331A (Direct)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028825A (ja) * 2006-07-24 2008-02-07 Kyocera Corp 弾性表面波装置及び通信装置
JP2011159885A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 薄膜の製造方法
JP2012160549A (ja) * 2011-01-31 2012-08-23 Renesas Electronics Corp 半導体装置の製造方法および多孔質層の改質方法
JP2014192322A (ja) * 2013-03-27 2014-10-06 Nippon Zeon Co Ltd エッチング方法
JP2016535685A (ja) * 2013-06-27 2016-11-17 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 偽造防止用署名
KR20170026815A (ko) * 2015-08-28 2017-03-09 삼성전자주식회사 3차원 반도체 메모리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273097A (ja) * 2002-03-13 2003-09-26 Seiko Epson Corp 成膜方法、並びにその方法を用いて製造したデバイス
JP2004241758A (ja) * 2003-01-17 2004-08-26 Advanced Lcd Technologies Development Center Co Ltd 配線金属層の形成方法および配線金属層
JP2004259753A (ja) * 2003-02-24 2004-09-16 Fujitsu Ltd 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273097A (ja) * 2002-03-13 2003-09-26 Seiko Epson Corp 成膜方法、並びにその方法を用いて製造したデバイス
JP2004241758A (ja) * 2003-01-17 2004-08-26 Advanced Lcd Technologies Development Center Co Ltd 配線金属層の形成方法および配線金属層
JP2004259753A (ja) * 2003-02-24 2004-09-16 Fujitsu Ltd 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028825A (ja) * 2006-07-24 2008-02-07 Kyocera Corp 弾性表面波装置及び通信装置
JP2011159885A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 薄膜の製造方法
JP2012160549A (ja) * 2011-01-31 2012-08-23 Renesas Electronics Corp 半導体装置の製造方法および多孔質層の改質方法
JP2014192322A (ja) * 2013-03-27 2014-10-06 Nippon Zeon Co Ltd エッチング方法
JP2016535685A (ja) * 2013-06-27 2016-11-17 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 偽造防止用署名
US10600058B2 (en) 2013-06-27 2020-03-24 Picosun Oy Anti-counterfeit signature
KR20170026815A (ko) * 2015-08-28 2017-03-09 삼성전자주식회사 3차원 반도체 메모리 장치
KR102437416B1 (ko) 2015-08-28 2022-08-30 삼성전자주식회사 3차원 반도체 메모리 장치

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