JP2006179914A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006179914A5 JP2006179914A5 JP2005365728A JP2005365728A JP2006179914A5 JP 2006179914 A5 JP2006179914 A5 JP 2006179914A5 JP 2005365728 A JP2005365728 A JP 2005365728A JP 2005365728 A JP2005365728 A JP 2005365728A JP 2006179914 A5 JP2006179914 A5 JP 2006179914A5
- Authority
- JP
- Japan
- Prior art keywords
- gas mixture
- substrate
- containing gas
- mtorr
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 13
- 239000000203 mixture Substances 0.000 claims 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 5
- 229910052731 fluorine Inorganic materials 0.000 claims 5
- 239000011737 fluorine Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000011159 matrix material Substances 0.000 claims 3
- 239000012778 molding material Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000004593 Epoxy Substances 0.000 claims 2
- 239000011256 inorganic filler Substances 0.000 claims 2
- 229910003475 inorganic filler Inorganic materials 0.000 claims 2
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/021,341 US7842223B2 (en) | 2004-12-22 | 2004-12-22 | Plasma process for removing excess molding material from a substrate |
| US11/021,341 | 2004-12-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006179914A JP2006179914A (ja) | 2006-07-06 |
| JP2006179914A5 true JP2006179914A5 (https=) | 2009-02-19 |
| JP4790407B2 JP4790407B2 (ja) | 2011-10-12 |
Family
ID=36594674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005365728A Expired - Fee Related JP4790407B2 (ja) | 2004-12-22 | 2005-12-20 | 余分な成形材料を基板から除去するためのプラズマ法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7842223B2 (https=) |
| JP (1) | JP4790407B2 (https=) |
| CN (1) | CN100565819C (https=) |
| SG (1) | SG123667A1 (https=) |
| TW (1) | TWI362976B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7635418B2 (en) * | 2004-12-03 | 2009-12-22 | Nordson Corporation | Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate |
| WO2010008102A1 (en) * | 2008-07-14 | 2010-01-21 | Ips Ltd. | Cleaning method of apparatus for depositing carbon containing film |
| US8236615B2 (en) | 2009-11-25 | 2012-08-07 | International Business Machines Corporation | Passivation layer surface topography modifications for improved integrity in packaged assemblies |
| US10431470B2 (en) * | 2017-02-23 | 2019-10-01 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59220934A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 樹脂封止型半導体装置の製造方法 |
| JPS63500062A (ja) | 1985-06-11 | 1988-01-07 | アメリカン テレフオン アンド テレグラフ カムパニ− | リ−ドフレ−ムのばり取り |
| US5208067A (en) * | 1986-04-14 | 1993-05-04 | International Business Machines Corporation | Surface modification of organic materials to improve adhesion |
| WO1991008095A2 (en) | 1989-11-24 | 1991-06-13 | Asm Fico Tooling B.V. | Single-strip moulding apparatus |
| JPH06285868A (ja) | 1993-03-30 | 1994-10-11 | Bridgestone Corp | 加硫金型の清浄方法 |
| US5961860A (en) | 1995-06-01 | 1999-10-05 | National University Of Singapore | Pulse laser induced removal of mold flash on integrated circuit packages |
| JP2836616B2 (ja) * | 1997-03-05 | 1998-12-14 | 日本電気株式会社 | 導体配線パターンの形成方法 |
| US6230719B1 (en) * | 1998-02-27 | 2001-05-15 | Micron Technology, Inc. | Apparatus for removing contaminants on electronic devices |
| US6082375A (en) | 1998-05-21 | 2000-07-04 | Micron Technology, Inc. | Method of processing internal surfaces of a chemical vapor deposition reactor |
| SG84519A1 (en) | 1998-12-07 | 2001-11-20 | Advanced Systems Automation | Method and apparatus for removal of mold flash |
| JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
| US6489178B2 (en) | 2000-01-26 | 2002-12-03 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
| US6439869B1 (en) | 2000-08-16 | 2002-08-27 | Micron Technology, Inc. | Apparatus for molding semiconductor components |
| US6629880B1 (en) | 2000-12-14 | 2003-10-07 | National Semiconductor Corporation | Rotary mechanical buffing method for deflashing of molded integrated circuit packages |
| US6732913B2 (en) | 2001-04-26 | 2004-05-11 | Advanpack Solutions Pte Ltd. | Method for forming a wafer level chip scale package, and package formed thereby |
| US6815362B1 (en) * | 2001-05-04 | 2004-11-09 | Lam Research Corporation | End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
| US20030005943A1 (en) * | 2001-05-04 | 2003-01-09 | Lam Research Corporation | High pressure wafer-less auto clean for etch applications |
| WO2002090615A1 (en) * | 2001-05-04 | 2002-11-14 | Lam Research Corporation | Duo-step plasma cleaning of chamber residues |
| US20040235303A1 (en) * | 2001-05-04 | 2004-11-25 | Lam Research Corporation | Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
| JP2003273499A (ja) * | 2002-03-12 | 2003-09-26 | Nippon Spindle Mfg Co Ltd | プリント配線基板のプラズマ洗浄方法 |
| SG109495A1 (en) | 2002-04-16 | 2005-03-30 | Micron Technology Inc | Semiconductor packages with leadfame grid arrays and components and methods for making the same |
| DE10237084A1 (de) | 2002-08-05 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements |
| JP4097069B2 (ja) * | 2002-08-28 | 2008-06-04 | Ｔｄｋ株式会社 | プリント基板の製造方法 |
| US6750082B2 (en) | 2002-09-13 | 2004-06-15 | Advanpack Solutions Pte. Ltd. | Method of assembling a package with an exposed die backside with and without a heatsink for flip-chip |
| KR20060115734A (ko) * | 2003-10-28 | 2006-11-09 | 노드슨 코포레이션 | 플라즈마 프로세싱 시스템 및 플라즈마 처리 방법 |
| US7959819B2 (en) * | 2004-06-29 | 2011-06-14 | Shouliang Lai | Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes |
| US7635418B2 (en) * | 2004-12-03 | 2009-12-22 | Nordson Corporation | Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate |
| US20060201910A1 (en) | 2004-12-22 | 2006-09-14 | Nordson Corporation | Methods for removing extraneous amounts of molding material from a substrate |
-
2004
- 2004-12-22 US US11/021,341 patent/US7842223B2/en not_active Expired - Fee Related
-
2005
- 2005-11-18 SG SG200507043A patent/SG123667A1/en unknown
- 2005-11-22 TW TW094141017A patent/TWI362976B/zh not_active IP Right Cessation
- 2005-12-20 JP JP2005365728A patent/JP4790407B2/ja not_active Expired - Fee Related
- 2005-12-22 CN CNB2005101362123A patent/CN100565819C/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2005017983A3 (en) | Plasma ashing process | |
| WO2004107414A3 (en) | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith | |
| US10785586B2 (en) | Sound-absorbing material, sound-absorbing particle and speaker module manufacturing process, particle and module | |
| WO2012018375A3 (en) | Plasma mediated ashing processes | |
| TW200712757A (en) | Method for plasma etching a chromium layer through a carbon hardmask suitable for photomask fabrication | |
| JP2006073722A5 (https=) | ||
| JP2017045869A5 (https=) | ||
| WO2007111893A3 (en) | Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps | |
| JP2013511151A5 (https=) | ||
| JP2006293361A5 (https=) | ||
| SG136917A1 (en) | Method for removing masking materials with reduced low-k dielectric material damage | |
| JP2016525788A5 (https=) | ||
| SG142213A1 (en) | Etching of nano-imprint templates using an etch reactor | |
| WO2008021363A3 (en) | Electron beam processing method using carbon nanotube emitter | |
| JP2006148095A5 (https=) | ||
| JP2011192872A5 (https=) | ||
| TW200802540A (en) | Method and apparatus for providing mask in semiconductor processing | |
| WO2006028858A3 (en) | Methods of removing photoresist on substrates | |
| TW200704815A (en) | Method for producing silicon oxide film, control program thereof, recording medium and plasma processing apparatus | |
| JP2005535936A5 (https=) | ||
| JP2006179914A5 (https=) | ||
| TW200608488A (en) | Low oxygen content photoresist stripping process for low dielectric constant materials | |
| JP2005524036A5 (https=) | ||
| CN102671647B (zh) | 一种等离子体处理污染物回收吸附剂的方法 | |
| SG131051A1 (en) | A gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |