JP2006179791A5 - - Google Patents

Download PDF

Info

Publication number
JP2006179791A5
JP2006179791A5 JP2004373405A JP2004373405A JP2006179791A5 JP 2006179791 A5 JP2006179791 A5 JP 2006179791A5 JP 2004373405 A JP2004373405 A JP 2004373405A JP 2004373405 A JP2004373405 A JP 2004373405A JP 2006179791 A5 JP2006179791 A5 JP 2006179791A5
Authority
JP
Japan
Prior art keywords
metal
bottom plate
semiconductor device
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004373405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006179791A (ja
JP4664670B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004373405A priority Critical patent/JP4664670B2/ja
Priority claimed from JP2004373405A external-priority patent/JP4664670B2/ja
Priority to US11/315,488 priority patent/US7586194B2/en
Publication of JP2006179791A publication Critical patent/JP2006179791A/ja
Publication of JP2006179791A5 publication Critical patent/JP2006179791A5/ja
Application granted granted Critical
Publication of JP4664670B2 publication Critical patent/JP4664670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004373405A 2004-12-24 2004-12-24 半導体装置 Expired - Fee Related JP4664670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004373405A JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置
US11/315,488 US7586194B2 (en) 2004-12-24 2005-12-23 Semiconductor device having exposed heat dissipating metal plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004373405A JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2006179791A JP2006179791A (ja) 2006-07-06
JP2006179791A5 true JP2006179791A5 (cg-RX-API-DMAC7.html) 2007-06-14
JP4664670B2 JP4664670B2 (ja) 2011-04-06

Family

ID=36610508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004373405A Expired - Fee Related JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置

Country Status (2)

Country Link
US (1) US7586194B2 (cg-RX-API-DMAC7.html)
JP (1) JP4664670B2 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101991259B1 (ko) * 2012-12-12 2019-06-24 한국전자통신연구원 고전력 소자용 패키지
JP6193784B2 (ja) * 2014-02-26 2017-09-06 京セラ株式会社 撮像素子実装用基板及び撮像装置
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
US11706852B2 (en) 2018-11-19 2023-07-18 Illinois Tool Works Inc. Ribbon bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
US11444588B2 (en) * 2018-11-19 2022-09-13 Illinois Tool Works Inc. Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
JP7693801B2 (ja) * 2020-10-21 2025-06-17 ケーエムダブリュ・インコーポレーテッド 電力増幅装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124555A (ja) * 1986-11-14 1988-05-28 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS6431444A (en) * 1987-07-28 1989-02-01 Hitachi Cable Porcelain substrate for surface mounting
EP0544329A3 (en) * 1991-11-28 1993-09-01 Kabushiki Kaisha Toshiba Semiconductor package
JPH07307416A (ja) * 1994-05-12 1995-11-21 Toshiba Corp 半導体チップの実装方法及び半導体デバイス
JP2765621B2 (ja) * 1995-07-31 1998-06-18 日本電気株式会社 半導体装置用パッケージ
JPH09107050A (ja) * 1995-10-12 1997-04-22 Nissan Motor Co Ltd 半導体装置の実装構造
JP3398556B2 (ja) * 1997-01-10 2003-04-21 株式会社三井ハイテック 半導体装置の製造方法
JP2000349088A (ja) 1999-06-09 2000-12-15 Toshiba Corp 半導体装置及びその製造方法
JP3500335B2 (ja) * 1999-09-17 2004-02-23 株式会社東芝 高周波回路装置
JP2001319992A (ja) * 2000-02-28 2001-11-16 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びそれらの製造方法
JP4574295B2 (ja) 2003-09-19 2010-11-04 株式会社半導体エネルギー研究所 発光装置の作製方法

Similar Documents

Publication Publication Date Title
TW200741768A (en) Multilayer capacitor
JP2007515775A5 (cg-RX-API-DMAC7.html)
JP2008160160A5 (cg-RX-API-DMAC7.html)
JP2009194322A5 (cg-RX-API-DMAC7.html)
JP2011086927A5 (ja) 半導体装置
TW200713500A (en) Semiconductor device
EP1926145A3 (en) Self-aligned through vias for chip stacking
TW200731537A (en) Semiconductor device and manufacturing method thereof
JP2006189853A5 (cg-RX-API-DMAC7.html)
JP2009044154A5 (cg-RX-API-DMAC7.html)
JP2006179791A5 (cg-RX-API-DMAC7.html)
JP2006134624A5 (cg-RX-API-DMAC7.html)
WO2008149818A1 (ja) 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置
JP2005277323A5 (cg-RX-API-DMAC7.html)
TW200733160A (en) Capacitor to be incorporated in wiring substarate, method for manufacturing the capacitor, and wiring substrate
JP2009540620A5 (cg-RX-API-DMAC7.html)
WO2007037929A3 (en) Electronic device with a gate electrode having at least two portions and a process for forming the electronic device
TW200711038A (en) Method of forming a semiconductor device having a diffusion barrier stack and structure thereof
JP2008121097A5 (cg-RX-API-DMAC7.html)
JP2013062461A5 (cg-RX-API-DMAC7.html)
JP2011258664A5 (cg-RX-API-DMAC7.html)
TW200603369A (en) Wiring substrate and manufacturing method thereof
TW200518132A (en) Stacking electronic device and producing method
JP2007189193A5 (cg-RX-API-DMAC7.html)
JP2010010224A5 (cg-RX-API-DMAC7.html)