JP2006165830A - Electronic equipment, low pass filter and method for manufacturing electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To attain the scale reduction and performance improvement of electronic equipment having a power amplifier circuit and a low pass filter circuit. <P>SOLUTION: A semiconductor chip 2, a passive component 4, an integrated passive component 5 and an air core coil 6 are mounted on a wiring board 3, and sealed by sealing resin 7 so that an RF power module 1 is formed. The low pass filter circuit of the RF power module 1 is formed by the integrated passive component 5 and the air core coil 6. A capacitive element configuring the low pass filter circuit is formed in the integrated passive component 5, and an inductor element configuring the parallel resonance circuit of the low pass filter circuit is formed by the air core coil 6, and the inductor element configuring the serial resonance circuit of the low pass filter circuit is formed by the spiral pattern of wiring in the integrated passive component 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electronic device, a low-pass filter, and an electronic device manufacturing method, and more particularly, to a technique effective when applied to an electronic device mounted on a mobile communication device and a low-pass filter used therefor.

  In recent years, mobile communication devices (so-called mobile phones) represented by communication methods such as GSM (Global System for Mobile Communications), PCS (Personal Communication Systems), PDC (Personal Digital Cellular), and CDMA (Code Division Multiple Access) Phone) is widespread worldwide.

  In general, this type of mobile communication device includes an antenna that emits and receives radio waves, a high-frequency power amplifier (power amplification module) that amplifies a power-modulated high-frequency signal and supplies the signal to the antenna, and a high-frequency signal received by the antenna. A receiving unit that performs signal processing, a control unit that performs these controls, and a battery (battery) that supplies a power supply voltage thereto are configured.

International Publication No. 02/052589 (Patent Document 1) has two amplification systems, and the amplification system has a configuration in which a plurality of amplification stages are connected in cascade, and the final amplification stage and the power supply voltage of each amplification system A technique related to a high-frequency power amplifying device in which air-core coils are connected in series between terminals is described.
International Publication No. 02/052589 pamphlet

  According to the study of the present inventor, the following has been found.

  In recent years, along with demands for mobile communication devices that are smaller, thinner, and higher performance, electronic devices such as power amplification modules mounted on them are also required to be smaller, thinner, and higher performance. Yes. The power amplification module has a structure in which an electronic component such as a semiconductor amplification element chip or a passive component is mounted on a wiring board, and it is desired to reduce the size and thickness of each electronic component.

  When an integrated passive element in which multiple passive elements are formed on a semiconductor substrate is used in a power amplification module, the power amplification module can be made smaller than when individual passive elements are used as individual chip components. However, the performance of the power amplifying module cannot be sufficiently improved only by applying the integrated passive element.

  An object of the present invention is to provide a technique capable of downsizing an electronic device.

  Another object of the present invention is to provide a technique capable of improving the performance of an electronic device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  According to the present invention, a low pass filter circuit of an electronic device having a power amplifier circuit and a low pass filter circuit is formed by an air core coil and an integrated passive element.

  In the present invention, a low-pass filter including a plurality of inductor elements and capacitive elements is formed by an air-core coil and an integrated passive element.

  The present invention also provides a method of winding a conductor wire around a core, cutting the conductor wire to form an air core coil, pulling out the core from the air core coil, and then in a state where a plurality of air core coils are intertwined. An air core coil is mounted on an electronic device without stocking the coil, and a low pass filter circuit of the electronic device having a power amplification circuit and a low pass filter circuit is formed by the air core coil and an integrated passive element.

  According to the present invention, a low-pass filter circuit of an electronic device is formed by a first inductor element having a spiral pattern formed by a conductor layer of a wiring board and an integrated passive element mounted on the wiring board. is there.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  The electronic device can be downsized. In addition, the performance of the electronic device and the low-pass filter can be improved.

  In the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections. However, unless otherwise specified, they are not irrelevant to each other, and one is a part of the other or All the modifications, details, supplementary explanations, and the like are related. Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number. Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted. In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  In the drawings used in the embodiments, hatching may be omitted even in a cross-sectional view so as to make the drawings easy to see. Further, even a plan view may be hatched to make the drawing easy to see.

(Embodiment 1)
In this embodiment, for example, a power amplification module (electronic) such as an RF (Radio Frequency) power module used (installed) in a digital cellular phone (mobile communication device) that transmits information using a network such as the GSM system. Device).

  Here, GSM (Global System for Mobile Communication) refers to one or standard of a wireless communication method used for digital mobile phones. GSM has three frequency bands of radio waves to be used: 900 MHz band is GSM900 or simply GSM, 1800 MHz band is GSM1800 or DCS (Digital Cellular System) 1800 or PCN, 1900 MHz band is GSM1900 or DCS1900 or PCS (Personal Communication Services) ). GSM1900 is mainly used in North America. In North America, GSM850 in the 850 MHz band may also be used. An RF power module (electronic device) 1 according to the present embodiment includes, for example, an RF power module (high frequency power amplification device, power amplification module, power amplifier module, semiconductor device, electronic device) used in these frequency bands (high frequency bands). ).

  FIG. 1 shows a circuit block diagram of an amplifier circuit constituting an RF power module (high-frequency power amplifier, power amplifier module, power amplifier module, semiconductor device, electronic device) 1 of the present embodiment. In this figure, for example, two frequency bands of GSM900 and DCS1800 can be used (dual band system), and GMSK (Gaussian filtered Minimum Shift Keying) modulation system and EDGE (Enhanced Data GSM Environment) modulation system in each frequency band. The circuit block diagram (amplifier circuit) of the RF power module which can use two communication systems is shown. Note that the GMSK modulation method is a method used for communication of audio signals, and is a method of shifting the phase of a carrier wave according to transmission data. The EDGE modulation method is a method used for data communication and is a method in which an amplitude shift is further added to the phase shift of GMSK modulation.

  As shown in FIG. 1, the circuit configuration of the RF power module 1 includes a power amplifier circuit 102A for GSM900 (824 to 915 MHz) including three amplifier stages 102A1, 102A2, and 102A3, and three amplifier stages 102B1, 102B2, and 102A2. A power amplifier circuit 102B for DCS1800 (1710 to 1910 MHz) comprising 102B3, a peripheral circuit 103 for controlling and assisting the amplification operation of these power amplifier circuits 102A and 102B, an input terminal 104a for GSM900, and a power amplifier circuit 102A A matching circuit (input matching circuit) 105A between the first amplification stage 102A1 and a matching circuit (input matching circuit) between the DCS 1800 input terminal 104b and the power amplification circuit 102B (first amplification stage 102B1) 105B and output terminal 1 for GSM900 6a and a power amplifier circuit 102A (third amplifier stage 102A3), a matching circuit (output matching circuit) 107A and a low-pass filter 108A, an output terminal 106b for DCS 1800, and a power amplifier circuit 102B (three stages) A matching circuit (output matching circuit) 107B and a low-pass filter (Low Pass Filter) 108B between the amplification stages 102B3) of the eye are provided.

  The low-pass filter 108A for GSM900 is provided between the matching circuit 107A and the output terminal 106a, and the output of the power amplifier circuit 102A is input to the low-pass filter 108A via the matching circuit 107A. The low-pass filter 108B for DCS 1800 is provided between the matching circuit 107B and the output terminal 106b, and the output of the power amplifier circuit 102B is input to the low-pass filter 108B via the matching circuit 107B. Further, an interstage matching circuit (interstage matching circuit) 102AM1 is provided between the amplification stage 102A1 and the amplification stage 102A2 of the power amplification circuit 102A for GSM900, and a stage is provided between the amplification stage 102A2 and the amplification stage 102A3. An inter-stage matching circuit (inter-stage matching circuit) 102AM2 is provided, and an inter-stage matching circuit (inter-stage matching circuit) 102BM1 is provided between the amplification stage 102B1 and the amplification stage 102B2 of the power amplification circuit 102B for the DCS 1800. An interstage matching circuit (interstage matching circuit) 102BM2 is provided between the amplification stage 102B2 and the amplification stage 102B3.

  Among these, the power amplification circuit 102A (amplification stages 102A1 to 102A3) for GSM900, the power amplification circuit 102B (102B1 to 102B3) for DCS1800, and the peripheral circuit 103 are one semiconductor chip (semiconductor amplification element chip, high frequency) Power amplifying element chip) 2. As another form, the power amplifying circuit 102A for GSM900, the power amplifying circuit 102B for DCS1800, and the peripheral circuit 103 can be formed by a plurality of semiconductor chips, for example, a semiconductor chip in which amplification stages 102A1 and 102B1 are formed. Alternatively, the semiconductor chip on which the amplification stages 102A2 and 102B2 are formed and the semiconductor chip on which the amplification stages 102A3 and 102B3 are formed can be formed individually.

  The peripheral circuit 103 includes a control circuit 103A and a bias circuit 103B for applying a bias voltage to the amplification stages 102A1 to 102A3 and 102B1 to 102B3. The control circuit 103A is a circuit that generates a desired voltage to be applied to the power amplifier circuits 102A and 102B, and includes a power supply control circuit 103A1 and a bias voltage generation circuit 103A2. The power supply control circuit 103A1 is a circuit that generates a first power supply voltage to be applied to the drain terminal of the output amplification element (for example, MISFET) of each of the amplification stages 102A1 to 102A3 and 102B1 to 102B3. The bias voltage generation circuit 103A2 is a circuit that generates a first control voltage for controlling the bias circuit 103B. Here, when the power supply control circuit 103A1 generates the first power supply voltage based on the output level designation signal supplied from the external baseband circuit, the bias voltage generation circuit 103A2 is generated by the power supply control circuit 103A1. The first control voltage is generated based on the power supply voltage. The baseband circuit is a circuit that generates the output level designation signal. This output level designation signal is a signal that designates the output level of the power amplifier circuits 102A and 102B, and is generated based on the distance between the mobile phone and the base station, that is, the output level corresponding to the strength of the radio wave. It is like that.

  The RF input signal input to the GSM 900 input terminal 104a of the RF power module 1 is input to the semiconductor chip 2 via the matching circuit 105A, and the power amplifier circuit 102A in the semiconductor chip 2, that is, the three amplification stages 102A1 to 102A3. And is output from the semiconductor chip 2 and output as an RF output signal from the output terminal 106a for GSM900 through the matching circuit 107A and the low-pass filter 108A. Further, the RF input signal input to the DCS 1800 input terminal 104b of the RF power module 1 is input to the semiconductor chip 2 via the matching circuit 105B, and the power amplifier circuit 102B in the semiconductor chip 2, that is, the three amplification stages 102B1. Is amplified by ˜102B3, outputted from the semiconductor chip 2, and outputted as an RF output signal from the output terminal 106b for DCS1800 through the matching circuit 107B and the low-pass filter 108B.

  Each matching circuit is a circuit that performs impedance matching, and low-pass filters (low-pass filter circuit, band-pass filter, band-pass filter circuit) 108A and 108B are circuits that attenuate harmonics. Harmonics (second harmonic and third harmonic) components are generated in the power amplifier circuits 102A and 102B, but low-pass filters 108A and 108B are interposed between the power amplifier circuits 102A and 102B and the output terminals 106a and 106b. The harmonic components included in the amplified RF signal can be attenuated by the low-pass filters 108A and 108B so that the RF output signals output from the output terminals 106a and 106b do not include harmonic components.

  A GSM900 low-pass filter (bandpass filter) 108A between the GSM900 output terminal 106a and the GSM900 power amplifier circuit 102A passes a signal in the frequency band of 824 to 915 MHz, and doubles the frequency ( 1648 to 1830 MHz) and triple band (2472 to 2745 MHz) can be cut (attenuated) so as not to pass. The DCS1800 low-pass filter (bandpass filter) 108B between the DCS1800 output terminal 106b and the DCS1800 power amplifier circuit 102B passes a signal in the frequency band of 1710 to 1910 MHz and doubles the frequency. A band (3420 to 3820 MHz) or a triple band (5130 to 5730 MHz) can be cut (attenuated) so as not to pass. Therefore, the low-pass filters 108A and 108B can function as band-pass filters that pass signals in a predetermined frequency band and attenuate signals in other frequency bands.

  As described above, the RF power module 1 of the present embodiment has two systems (that is, for GSM900 and DCS1800) of power amplification circuits 102A and 102B, and each of the two systems of power amplification circuits 102A and 102B has a low-pass filter circuit. Are connected (electrically connected), and the transmission frequency bands of the two power amplifier circuits 102A and 102B are a 0.9 GHz band and a 1.8 GHz band, respectively.

  FIG. 2 is a circuit diagram (equivalent circuit diagram) showing a circuit configuration example of the low-pass filters 108A and 108B. Each of the low-pass filters 108A and 108B includes a plurality of inductor elements 111a, 111b, and 111c and capacitive elements 112a, 112b, and 112c.

  As shown in FIG. 2, each low-pass filter 108A includes one parallel resonance circuit (LC parallel resonance circuit, parallel resonator) 113 and two series resonance circuits (LC series resonance circuit, series resonator) 114, 115. , 108B are configured. In the present embodiment, an inductor element and a capacitor element connected in parallel is called a parallel resonance circuit (parallel resonator), and an inductor element and a capacitor element connected in series is called a series resonance circuit (series resonator). . Since the outputs of the power amplifier circuits 102A and 102B are connected (electrically connected) to the low-pass filters 108A and 108B via the matching circuits 107A and 107B, the RF signals amplified by the power amplifier circuits 102A and 102B The signals are input to the input terminal 116 of the low-pass filters 108A and 108B via 107A and 107B, and the harmonic components are attenuated and output from the output terminal 117 of the low-pass filters 108A and 108B.

  The parallel resonant circuit 113 is formed by an inductor element 111a and a capacitive element 112a connected in parallel between the input terminal 116 and the output terminal 117 of the low-pass filter. The series resonant circuit 114 is formed by an inductor element 111b and a capacitive element 112b connected in series between the input terminal 116 and the ground terminal 118 of the low-pass filter. The series resonant circuit 115 is formed by an inductor element 111c and a capacitive element 112c connected in series between the output terminal 117 and the ground terminal 119 of the low-pass filter. Therefore, the inductor element 111a and the capacitive element 112a are connected in parallel between the input terminal 116 and the output terminal 117, and the inductor element 111b and the capacitive element 112b are connected in series between the input terminal 116 and the ground terminal 118, and the output terminal. Inductor element 111c and capacitive element 112c are connected in series between 117 and ground terminal 119 to form low-pass filters 108A and 108B.

  The low-pass filter 108A and the low-pass filter 108B have the same circuit configuration, but the inductance values of the inductor elements 111a, 111b, and 111c and the capacitance values of the capacitive elements 112a, 112b, and 112c are the same as those of the low-pass filter 108A. It is different from the filter 108B. Considering the frequency band to be passed by each low-pass filter 108A, 108B, the frequency band to be attenuated, the attenuation factor, etc., the inductance value of the inductor elements 111a, 111b, 111c of the low-pass filter 108A and the capacitance value of the capacitive elements 112a, 112b, 112c. In addition, the inductance values of the inductor elements 111a, 111b, and 111c of the low-pass filter 108B and the capacitance values of the capacitive elements 112a, 112b, and 112c can be designed independently.

  In the present embodiment, the inductor elements 111b and 111c and the capacitive elements 112a, 112b, and 112c of the low-pass filters 108A and 108b are integrated passive elements (IPD: Integrated Passive Device, corresponding to an integrated passive component 5 described later), and are integrated passive. The inductor elements 111b and 111c and the capacitive elements 112a, 112b and 112c are formed in the element. The inductor element 111a of the low-pass filters 108A and 108b includes an air-core coil (corresponding to an air-core coil 6 described later). That is, the low-pass filter includes an integrated passive element (integrated passive component 5) in which the inductor elements 111b and 111c and the capacitive elements 112a, 112b, and 112c are formed, and an air-core coil (air-core coil 6) that constitutes the inductor element 111a. 108A or low-pass filter 108B is formed.

  Next, FIG. 3 shows an example of a digital cellular phone system DPS (electronic device) using the RF power module 1 of the present embodiment. Reference numeral ANT in FIG. 3 is an antenna for transmitting and receiving signal radio waves, reference numeral 151 is a front-end module, reference numeral 152 is a voice signal converted into a baseband signal, a received signal is converted into a voice signal, and a modulation system switching signal. And a baseband circuit for generating a band switching signal, 153 is a modulation / demodulation circuit for down-converting and demodulating the received signal to generate a baseband signal and modulating the transmitted signal, and FLT1 and FLT2 are received from the received signal This filter removes noise and interference. The filter FLT1 is for GSM, and the filter FLT2 is for DCS. The baseband circuit 152 includes a plurality of semiconductor integrated circuits such as a DSP (Digital Signal Processor), a microprocessor, and a semiconductor memory. The front end module 151 includes switch circuits (antenna switches and antenna switch circuits) 154a and 154b, capacitors C5 and C6, and a duplexer 156. The switch circuits 154a and 154b are switch circuits for switching between transmission and reception, the capacitors C5 and C6 are elements for cutting a DC component from the received signal, and the demultiplexer 156 is a circuit for demultiplexing a signal in the GSM900 band and a signal in the DCS1800 band These circuits and elements are mounted on one wiring board to form a module. The switching signals CNT1 and CNT2 of the switch circuits 154a and 154b are supplied from the baseband circuit 152. As can be seen from FIG. 3, the outputs of the power amplifier circuits 102A and 102B are connected to the low-pass filters 108A and 108B via the matching circuits 107A and 107B, and the outputs of the low-pass filters 108A and 108B are switched circuits (antenna switch, antenna switch circuit). 154a and 154b.

  FIG. 4 is a conceptual top view (plan view) showing the structure of the RF power module 1 of the present embodiment, and FIG. 5 is a conceptual cross-sectional view of the RF power module 1 of the present embodiment. FIG. 6 is a conceptual perspective view of the RF power module 1 of the present embodiment. 4 and 6 show a state in which the sealing resin 7 is seen through. 5 corresponds to a cross-sectional view (side cross-sectional view), but shows a conceptual structure of the RF power module 1 and is completely different from a cross-section obtained by cutting the structure of FIGS. 4 and 6 at a predetermined position. Does not match. 4 and 6 show the conceptual structure of the RF power module 1. In the top view of FIG. 4 and the perspective view of FIG. 6, the components on the top surface 3a of the wiring board 3 are shown. The arrangement position is not completely coincident.

  The RF power module 1 of the present embodiment shown in FIGS. 4 to 6 includes a wiring board (multilayer board, multilayer wiring board, module board) 3 and a semiconductor chip (semiconductor) mounted (mounted) on the wiring board 3. Element, active element) 2, passive component (passive element, chip component) 4 mounted (mounted) on wiring substrate 3, and integrated passive component (integrated passive element, mounted) mounted on wiring substrate 3. IPD) 5, an air core coil 6 mounted (mounted) on the wiring substrate 3, and a sealing covering the upper surface of the wiring substrate 3 including the semiconductor chip 2, the passive component 4, the integrated passive component 5 and the air core coil 6. And a resin (sealing resin portion, sealing portion, sealing body) 7. The semiconductor chip 2, the passive component 4, the integrated passive component 5, and the air core coil 6 are electrically connected to the conductor layer (transmission line) of the wiring board 3. The RF power module 1 can also be mounted on, for example, an external circuit board (not shown) or a mother board.

The wiring substrate 3 is, for example, a multilayer substrate (multilayer wiring substrate) in which a plurality of insulator layers (dielectric layers) 11 and a plurality of conductor layers or wiring layers (not shown) are stacked and integrated. In FIG. 5, four insulating layers 11 are laminated to form the wiring board 3, but the number of laminated insulating layers 11 is not limited to this and can be variously changed. As a material for forming the insulator layer 11 of the wiring board 3, for example, a ceramic material such as alumina (aluminum oxide, Al ₂ O ₃ ) can be used. In this case, the wiring board 3 is a ceramic multilayer board. The material of the insulator layer 11 of the wiring board 3 is not limited to a ceramic material and can be variously changed. For example, a glass epoxy resin may be used.

  Between the upper surface (front surface, main surface) 3a and the lower surface (back surface, main surface) 3b of the wiring substrate 3 and between the insulator layers 11, there are wiring forming conductor layers (wiring layers, wiring patterns, conductor patterns). Is formed. By the uppermost conductor layer of the wiring board 3, a board-side terminal (terminal, electrode, transmission line, wiring pattern) 12 a made of a conductor is formed on the upper surface 3 a of the wiring board 3, and the lowermost conductor layer of the wiring board 3. Thus, an external connection terminal (terminal, electrode, module electrode) 12b made of a conductor is formed on the lower surface 3b of the wiring board 3. The external connection terminal 12b corresponds to, for example, the input terminals 104a and 104b and the output terminals 106a and 106b in FIG. A conductor layer (wiring layer, wiring pattern, conductor pattern) is also formed inside the wiring board 3, that is, between the insulator layers 11, but is not shown in FIG. 5 for simplification. Among the wiring patterns formed by the conductor layer of the wiring board 3, the wiring pattern for supplying the reference potential (for example, the reference potential supplying terminal 12 c on the lower surface 3 b of the wiring board 3) is used for forming the wiring of the insulator layer 11. The wiring pattern for the transmission line can be formed as a belt-like pattern so as to cover the most area of the surface.

  Each conductor layer (wiring layer) constituting the wiring board 3 is electrically connected through a conductor or a conductor film in a via hole (through hole) 13 formed in the insulator layer 11 as necessary. Accordingly, the board-side terminal 12a on the upper surface 3a of the wiring board 3 is formed on the upper surface 3a of the wiring board 3 and / or an internal wiring layer (wiring layer between the insulator layers 11) or a conductor film in the via hole 13 as necessary. Etc., and electrically connected to the external connection terminal 12b on the lower surface 3b of the wiring board 3. Of the via holes 13, the via holes 13 a provided below the semiconductor chip 2 can also function as thermal vias for conducting heat generated in the semiconductor chip 2 to the lower surface 3 b side of the wiring substrate 3.

  The semiconductor chip 2 is a semiconductor chip 2 on which a semiconductor integrated circuit corresponding to a circuit configuration surrounded by a dotted line indicating the semiconductor chip 2 in the circuit block diagram of FIG. 1 is formed. Therefore, the semiconductor chip 2 includes an amplifier circuit (power amplifier circuit), and the power amplifier circuits 102A and 102B (the amplifier stages 102A1 to 102A3 and 102B1 to 102B3) are configured in the semiconductor chip 2 (or the surface layer portion). Semiconductor amplifying elements (for example, MISFET (Metal Insulator Semiconductor Field Effect Transistor), heterojunction bipolar transistor or HEMT (High Electron Mobility Transistor)), semiconductor elements constituting the peripheral circuit 103 and matching circuit (interstage matching circuit) 102AM1, Passive elements constituting 102AM2, 102BM1, and 102BM1 are formed. As described above, the RF power module (electronic device) 1 includes the power amplification circuits (102A and 102B), and the semiconductor chip 2 is an active element constituting the power amplification circuit (102A and 102B). For example, the semiconductor chip 2 is formed by forming a semiconductor integrated circuit on a semiconductor substrate (semiconductor wafer) made of, for example, single crystal silicon, and then grinding the back surface of the semiconductor substrate as necessary, and then dicing or the like. The chip 2 is separated.

  FIG. 7 shows, as an example, an LDMOSFET (Laterally Diffused Metal-Oxide-Semiconductor Field Effect Transistor), a lateral diffusion MOSFET. 2 is a cross-sectional view of the main part of the semiconductor chip 2 when formed by (1).

As shown in FIG. 7, an epitaxial layer 202 made of p ⁻ type single crystal silicon is formed on the main surface of a semiconductor substrate 201 made of p ⁺ type single crystal silicon, and a part of the main surface of the epitaxial layer 202 is formed. Is formed with a p-type well 203 that functions as a punch-through stopper that suppresses the extension of the depletion layer from the drain to the source of the LDMOSFET. On the surface of the p-type well 203, a gate electrode 205 of the LDMOSFET is formed via a gate insulating film 204 made of silicon oxide or the like. The gate electrode 205 is made of, for example, a laminated film of an n-type polycrystalline silicon film and a metal silicide film, and sidewall spacers 206 made of silicon oxide or the like are formed on the side walls of the gate electrode 205.

The source and drain of the LDMOSFET are formed in regions separated from each other across the channel formation region inside the epitaxial layer 202. Drain, n contact with the channel forming region ^- -type offset drain region 207, n ^- -type contact offset drain region 207, an n-type offset drain region 208 formed apart from the channel forming region, n-type offset drain region And an n ⁺ -type drain region 209 formed in contact with 208 and further away from the channel formation region. Of these n ⁻ type offset drain region 207, n type offset drain region 208 and n ⁺ type drain region 209, n ⁻ type offset drain region 207 closest to gate electrode 205 has the lowest impurity concentration and is the lowest from gate electrode 205. The separated n ⁺ -type drain region 209 has the highest impurity concentration.

The source of the LDMOSFET, n contact with the channel forming region ^- -type source region 210, n ^- -type source region 210 in contact, are formed apart from the channel forming region, n ^- impurity concentration than -type source region 210 higher n ^{And a +} type source region 211. A p-type halo region 212 is formed below the n ⁻ -type source region 210.

A p-type punching layer 214 in contact with the n ⁺ -type source region 211 is formed at the end of the n ⁺ -type source region 211 (the end opposite to the side in contact with the n ⁻ -type source region 210). A p ⁺ type semiconductor region 215 is formed near the surface of the p type punching layer 214. The p-type punching layer 214 is a conductive layer for electrically connecting the source of the LDMOSFET and the semiconductor substrate 201, and is formed by, for example, a p-type polycrystalline silicon film embedded in the groove 213 formed in the epitaxial layer 202. Is done.

A silicon nitride film 221 and a silicon oxide film are formed on the p-type punching layer 214 (p ⁺ -type semiconductor region 215), source (n ⁺ -type source region 211), and drain (n ⁺ -type drain region 209) of the LDMOSFET. A plug 224 in a contact hole 223 formed at 222 is connected. A source electrode 225 is connected to the p-type punching layer 214 (p ⁺ -type semiconductor region 215) and the source (n ⁺ -type source region 211) through a plug 224, and the drain (n ⁺ -type drain region 209) is connected to A drain electrode 226 is connected through a plug 224.

  A wiring 229 is connected to each of the drain electrode 226 and the source electrode 225 through a through hole 228 formed in the silicon oxide film 227 that covers the drain electrode 226 and the source electrode 225. A surface protection film 230 made of a laminated film of a silicon oxide film and a silicon nitride film is formed on the wiring 229. A source back electrode 231 is formed on the back surface of the semiconductor substrate 201.

  In FIG. 8, as another example, the semiconductor amplifying elements constituting the power amplifier circuits 102A and 102B (amplification stages 102A1 to 102A3 and 102B1 to 102B3) are formed by heterojunction bipolar transistors (HBTs). It is principal part sectional drawing of the semiconductor chip 2 in the case.

As shown in FIG. 8, a subcollector layer 252 made of an n ⁺ -type GaAs layer is formed on a semi-insulating GaAs substrate (semiconductor substrate) 251, and an HBT 253 is formed on the subcollector layer 252.

  Each HBT 253 has a collector electrode 254 made of gold or the like formed on the sub-collector layer 252 and a collector mesa 255 formed at a predetermined distance from the collector electrode 254. The collector mesa 255 is formed of, for example, an n-type GaAs layer, and the collector mesa 255 and the collector electrode 254 are electrically connected via the subcollector layer 252.

  A base mesa 256 made of, for example, a p-type GaAs layer is formed on the collector mesa 255. A base electrode 257 made of gold or the like is formed in the peripheral region on the base mesa 256. An emitter layer 258 is formed on a substantially central portion of the base mesa 256, and an emitter electrode 259 is formed on the emitter layer 258. The emitter layer 258 is formed of, for example, an n-type InGaP layer, a GaAs layer, and an InGaAs layer, and the emitter electrode 259 is formed of, for example, tungsten silicide. As described above, a heterogeneous semiconductor junction (heterojunction) is formed between the base mesa (p-type GaAs layer) 256 and the emitter layer (n-type InGaP layer) 258.

  A collector wiring 263 is connected to the collector electrode 254 through a contact hole 262 formed in the insulating film 261. An emitter wiring 266 is connected to the emitter electrode 259 via a through hole 265 formed in the insulating films 264 and 261. Illustration and description of the structure above the emitter wiring 266 is omitted here.

  As shown in FIGS. 4 to 6, the semiconductor chip 2 is die-bonded to the conductor layer 14 on the upper surface 3 a of the wiring substrate 3 with a bonding material (adhesive) such as solder 15 face up. For die bonding of the semiconductor chip 2, silver paste or the like can be used instead of the solder 15. An electrode (bonding pad) 2 a formed on the surface (upper surface) of the semiconductor chip 2 is electrically connected to a substrate-side terminal 12 a on the upper surface 3 a of the wiring substrate 3 via a bonding wire 8. Further, a back electrode 2 b is formed on the back surface of the semiconductor chip 2, and the back electrode 2 b of the semiconductor chip 2 is connected (bonded) to the conductor layer 14 on the top surface 3 a of the wiring substrate 3 by a bonding material such as solder 15. Further, it is electrically connected to the reference potential supply terminal 12 c on the lower surface 3 b of the wiring substrate 3 through a conductor film in the via hole 13.

  The passive component 4 includes a passive element such as a resistance element (for example, a chip resistor), a capacitance element (for example, a chip capacitor), or an inductor element (for example, a chip inductor), and includes, for example, a chip component. The passive component 4 is a passive component that constitutes, for example, matching circuits (input matching circuits) 105A and 105B and matching circuits (output matching circuits) 107A and 107B. The passive elements constituting the matching circuits (interstage matching circuits) 102AM1, 102AM2, 102BM1, and 102BM1 are formed by the passive component 4 either in the semiconductor chip 2 or not in the semiconductor chip 2. May be. The passive component 4 is mounted on a board-side terminal 12 a on the upper surface 3 a of the wiring board 3 by a bonding material having good conductivity such as solder 17.

  The integrated passive component 5 is an integrated passive device (IPD) that forms part of the low-pass filters 108A and 108B. The integrated passive component 5 includes the inductor elements 111b and 111c and the capacitive elements 112a and 112b. , 112c are formed. In the present embodiment, an integrated passive element (integrated passive component, IPD) refers to an element in which a plurality of passive elements are formed on a substrate and no active element is formed. A plurality of passive elements are formed by the conductor layer and / or the insulator layer on the substrate to form an integrated passive element. As a substrate constituting the integrated passive element, a semiconductor substrate mainly made of a silicon single crystal or the like is used. As other forms, a GaAs (gallium arsenide) substrate, an insulating substrate such as a sapphire substrate or a glass substrate, or the like is used. You can also.

  A plurality of bump electrodes (projection electrodes) 18 (corresponding to bump electrodes 64 to be described later) are formed on the surface (main surface on the passive element forming side) 5a of the integrated passive component 5. The bump electrode 18 is, for example, a solder bump. A gold bump or the like can be used as the bump electrode 18. The bump electrode 18 is electrically connected to passive elements (inductor elements 111b and 111c and capacitive elements 112a, 112b and 112c) formed in the integrated passive component 5.

  The integrated passive component 5 is flip-chip connected to the upper surface 3 a of the wiring board 3. That is, the integrated passive component 5 has its back surface (main surface opposite to the main surface on the passive element formation side) 5b facing upward, and its surface (main surface on the passive element formation side) 5a is the upper surface of the wiring board 3. It is mounted (mounted) on the upper surface 3a of the wiring board 3 in a direction facing the 3a. Therefore, the integrated passive component 5 is mounted face down on the upper surface 3 a of the wiring board 3. The bump electrode 18 on the surface 5 a of the integrated passive component 5 is joined to and electrically connected to the board-side terminal 12 a on the upper surface 3 a of the wiring board 3. Therefore, a plurality of passive elements (inductor elements 111b and 111c and capacitive elements 112a, 112b, and 112c) formed in the integrated passive component 5 are electrically connected to the board-side terminal 12a on the upper surface 3a of the wiring board 3 via the bump electrodes 18. Connected.

  In the present embodiment, an integrated passive component 5 in which a plurality of passive elements (a plurality of inductor elements 111b and 111c and a plurality of capacitive elements 112a, 112b, and 112c) are formed on a semiconductor substrate is mounted on the wiring board 3 and RF. Since the power module 1 is formed, compared with the case where individual passive elements (inductor elements 111b and 111c and capacitive elements 112a, 112b and 112c) are mounted on the wiring board 3 as individual chip components, the RF power The module 1 can be downsized.

  The air-core coil 6 is an inductor element that constitutes a part of the low-pass filters 108A and 108B, and is an inductor element corresponding to the inductor element 111a. The air-core coil 6 is formed by winding a conductor wire (for example, a copper wire) covered with an insulating film a plurality of times in a spiral shape. The bonding material is bonded to and electrically connected to the board-side terminal 12 a on the upper surface 3 a of the wiring board 3.

  In the present embodiment, each of the low-pass filters is formed by the air-core coil 6 constituting the inductor element 111a and the integrated passive component 5 in which a plurality of inductor elements 111b and 111c and capacitive elements 112a, 112b, and 112c are formed. 108A and 108B are formed.

  Between the substrate-side terminals 12a of the upper surface 3a of the wiring substrate 3 to which the semiconductor chip 2, the passive component 4, the integrated passive component 5 or the air-core coil 6 is electrically connected, the upper surface of the wiring substrate 3 or the inside of the wiring substrate 3 as necessary. The wiring is connected through a wiring layer, a conductor film in the via hole 13, and the like, and is electrically connected to the external connection terminal 12 b or the reference potential supply terminal 12 c on the lower surface 3 b of the wiring board 3.

  The sealing resin 7 is formed on the wiring substrate 3 so as to cover the semiconductor chip 2, the passive component 4, the integrated passive component 5, and the bonding wire 8. The sealing resin 7 is made of, for example, a resin material such as an epoxy resin, and can contain a filler.

  Next, the integrated passive component 5 used in the present embodiment will be described in more detail. First, an example of the manufacturing process of the integrated passive component 5 of the present embodiment will be described with reference to the drawings.

  9-16 is principal part sectional drawing in the manufacturing process of the integrated passive component 5 of this Embodiment. The integrated passive component 5 of the present embodiment can be manufactured, for example, as follows.

  First, as shown in FIG. 9, a semiconductor substrate (semiconductor wafer) 31 (hereinafter referred to as a substrate 31) made of, for example, a silicon single crystal is prepared. If a semiconductor substrate made of a silicon single crystal or the like is used as the substrate 31, as will be described later, for example, a plurality of IPD chips formed on the wafer through the wafer process can be collectively packaged in the wafer state. It is easy to manufacture the integrated passive component 5 by a so-called wafer process package (hereinafter referred to as WPP) technology. As another form, an insulating substrate such as a GaAs (gallium arsenide) substrate, a sapphire substrate, or a glass substrate can be used for the substrate 31.

  Next, an insulating film (oxide film, silicon oxide film) 32 is formed on the surface of the substrate 31 using, for example, a thermal oxidation method or CVD (Chemical Vapor Deposition). In addition, when an insulating substrate (for example, a glass substrate) is used as the substrate 31, the formation of the insulating film 32 can be omitted.

  Next, a conductor film (conductor layer) mainly composed of, for example, an aluminum (Al) alloy film is formed on the insulating film 32, and this conductor film is patterned using a photolithography technique and a dry etching technique. Thus, a wiring (first layer wiring, aluminum wiring) 33 made of the patterned conductor film (conductor layer, aluminum alloy film) is formed. As will be described later, the wiring 33 forms a lower electrode 34 a of a MIM (Metal Insulator Metal) type capacitive element (MIM capacitor) 34.

  Next, as illustrated in FIG. 10, an insulating film (interlayer insulating film) 35 is formed on the substrate 31 (insulating film 32) so as to cover the wiring 33. The insulating film 35 functions as an interlayer insulating film, and is made of, for example, a silicon oxide film.

  Next, the insulating film 35 is dry-etched using a photoresist pattern (not shown) formed on the insulating film 35 as an etching mask, thereby forming an opening (through hole) 36 in the insulating film 35. At the bottom of the opening 36, the wiring 33 (lower electrode 34a) is exposed.

  Next, as shown in FIG. 11, an insulating film 37 (for example, a silicon nitride film) as a capacitor insulating film of the capacitor is formed on the insulating film 35 including the bottom and side walls of the opening 36, and photolithography is performed. The insulating film 37 is patterned using a method and a dry etching method. The patterned insulating film 37 remains on the lower electrode 34 a (wiring 33) at the bottom of the opening 36, and becomes a capacitive insulating film 34 b of the MIM type capacitive element 34. Then, as shown in FIG. 12, an opening (through hole) 38 is formed by dry etching the insulating film 35 using a photoresist pattern (not shown) as an etching mask. The wiring 33 is exposed at the bottom of the opening 38.

  Next, a conductor film (conductor layer) mainly composed of, for example, an aluminum (Al) alloy film is formed on the substrate 31 (insulating film 35) so as to fill the openings 36 and 38, and photolithography is performed. Then, by patterning this conductor film using a dry etching method, a wiring (second layer wiring, aluminum wiring) 41 is formed from the patterned conductor film (conductor layer, aluminum alloy film). The wiring 41 is electrically connected to the wiring 33 at the bottom of the opening 38. In the capacitor formation region, the upper electrode 34c of the MIM type capacitive element 34 is formed by the wiring 41 formed on the lower electrode 34a made of the wiring 33 via the capacitive insulating film 34b (insulating film 37). Accordingly, the MIM (Metal Insulator Metal) type capacitive element that constitutes the capacitive elements 112a, 112b, 112c by the lower electrode 34a (wiring 33), the capacitive insulating film 34b (insulating film 37) and the upper electrode 34c (wiring 41). (MIM capacitor) 34 is formed.

  Next, as shown in FIG. 13, a relatively thin insulating film 43a made of a silicon oxide film, a silicon nitride film, or a laminated film thereof is formed on the substrate 31 (insulating film 35) so as to cover the wiring 41. After the formation, an insulating film (protective film, protective resin film, resin material film) 43 as a relatively thick surface protective film is formed on the insulating film 43a. The insulating film 43 is made of a resin material film such as polyimide resin (resin material). Then, a part of the insulating films 43, 43 a is selectively removed to form an opening 44, and a part of the wiring 41 is exposed at the bottom of the opening 44 to make a pad part (pad electrode) 45 made of the wiring 41. Form.

  In this way, the wafer process is performed on the substrate 31 as shown in FIGS. Here, the wafer process is also called a pre-process, and generally, various elements (passive elements here) and wiring layers (and pad electrodes) are formed on the main surface of the semiconductor wafer (substrate 31), and the surface This refers to the process from the formation of the protective film until the electrical test of each of a plurality of chip regions (IPDs are formed from the respective chip regions) formed on the semiconductor wafer can be performed with a probe or the like. The insulating film 43 is the uppermost layer in a semiconductor wafer subjected to a wafer process.

  After the structure of FIG. 13 is obtained by the wafer process (pretreatment) process as described above, as shown in FIG. 14, the seed film 51 is formed on the substrate 31 (the main surface on which the passive elements are formed). Form. The seed film 51 is made of, for example, a chromium (Cr) film or the like, and can be formed by, for example, a sputtering method. As a result, the seed film 51 is formed on the insulating film 43 including the pad portion 45 (wiring 41) exposed at the opening 44. Then, a photoresist pattern (not shown) is formed on the seed film 51. This photoresist pattern is formed in a region other than the region where the wiring 53 to be described later is to be formed, and the seed film 51 is exposed in the region where the wiring 53 is to be formed.

  Next, the wiring (rearranged wiring layer, rewiring) 53 is formed by using, for example, a plating method. For example, by forming a copper (Cu) film on the seed film 51 exposed from the resist pattern, a wiring (third layer wiring, copper wiring) 53 made of a copper film (conductor layer) can be formed. it can. The wiring 53 is electrically connected to the wiring 41 (pad portion 45) at the bottom of the opening 44 of the insulating films 43 and 43a. By forming the wiring 53 in a spiral pattern (spiral pattern) on the insulating film 43, spiral inductors (spiral coils) constituting the inductor elements 111b and 111c are formed. The thickness (film thickness) of the wiring 53 is relatively larger than the thickness (film thickness) of the wiring 33 and the thickness (film thickness) of the wiring 41 formed in the wafer process (pretreatment) step. The wirings 33, 41, and 53 are made of a conductive material. However, the material of the wiring 53 is different from the material of the wirings 33 and 41 formed in the wafer process (pretreatment) process, and the wiring 53 is formed as described above. Is mainly composed of copper (Cu), and the wirings 33 and 41 are mainly composed of aluminum (Al).

  Further, as described above, the insulating film 43a made of a silicon oxide film, a silicon nitride film, or a laminated film thereof, and the insulating film 43 made of a resin material film such as polyimide resin are formed on the wiring 41 as described above. A wiring 53 is formed on the insulating film 43 made of this resin material film. Accordingly, the wiring (first conductor layer) 33 formed on the substrate 31, the wiring (second conductor layer) 41 above the wiring (first conductor layer) 33, and the insulation between the wiring 33 and the wiring 41. The capacitor 37 constituting the capacitor elements 112a, 112b, and 112c is formed by the film 37 (capacitor insulating film 34b). On the wiring 41, the insulating film 43a (lower layer side) and the insulating film 43 (upper layer side) are formed. A spiral inductor constituting the inductor elements 111b and 111c is formed by wiring (third conductor layer, copper wiring) 53 formed on the interlayer insulating film (insulating film 43a, resin material film). It is formed.

  Thereafter, the resist pattern is removed, and then light etching is performed to remove a portion of the seed film 51 not covered with the wiring 53 (that is, a portion covered with the resist pattern before removal). Thereby, the structure of FIG. 14 is obtained.

  The seed film 51 has a copper diffusion preventing function and a function of improving the adhesion between the polyimide resin (insulating film 43) and the wiring 53, and is not limited to chromium (Cr) but can be variously changed. For example, titanium, titanium tungsten, titanium nitride, tungsten, or the like can be used.

  Next, as shown in FIG. 15, a resist pattern (not shown) having an opening is formed on the insulating film 43, and a nickel (Ni) film is formed on the wiring 53 exposed at the bottom of the opening of the resist pattern. 54 is formed using, for example, a plating method. After the nickel film 54 is formed, the resist pattern is removed.

  Next, an insulating film (protective film, protective resin film, passivation film) made of a resin material film such as a polyimide resin is used as a surface protective film so as to cover the wiring 53 and the nickel film 54 on the substrate 31 (insulating film 43). ) 61 is formed. Thereby, the wiring 53 is covered with the insulating film 61 as a surface protective film. By using an organic insulating film such as polyimide resin as the uppermost insulating film 61, it is possible to easily handle a chip (integrated passive component) with a relatively soft organic insulating film as the uppermost layer. In addition, the uppermost insulating film 61 can be formed of a silicon oxide film, a silicon nitride film, or a laminated film thereof, and thereby heat radiation of a spiral inductor (corresponding to the inductor elements 111b and 111c) formed by the wiring 53. Characteristics can be improved.

  Next, an opening 62 exposing a part of the wiring 53 is formed in the insulating film 61. At the bottom of the opening 62, the nickel film 54 is exposed.

  Next, as shown in FIG. 16, gold (Au) as a terminal surface film (bump base metal layer) is formed on the wiring 53 (the upper nickel film 54) exposed in the opening 62 by using, for example, a plating method. ) A film 63 is formed. Further, after the opening 62 is formed, the nickel film 54 may be formed on the wiring 53 exposed in the opening 62, and the gold (Au) film 63 may be formed on the nickel film 54.

  Next, a bump electrode 64 (corresponding to the bump electrode 18) is formed on the gold film 63 on the wiring 53 exposed at the opening 62. The bump electrode 64 is made of, for example, a solder bump. For example, the bump electrode 64 can be formed by printing a solder paste by a printing method or the like and then performing a heat treatment. The bump electrode 64 (that is, the bump electrode 18) is a terminal (external connection terminal) of the integrated passive component 5, and corresponds to the input terminal 116, the output terminal 117, or the ground terminals 118 and 119 of the low-pass filters 108A and 108B.

  Next, after grinding the back surface of the substrate 31 as necessary, the substrate 31 is diced (cut). The substrate 31 as a semiconductor wafer is separated into individual chip regions by dicing, and the integrated passive component 5 is separated into individual pieces.

  In this way, the integrated passive component 5 of the present embodiment is prepared (manufactured). Therefore, the integrated passive component 5 is a so-called wafer process in which a plurality of integrated passive component chips formed on the wafer through the wafer process as described above are collectively packaged in the wafer state. Package (Wafer Process Package: WPP).

  17 and 18 are plan views (top views) showing the structure of the integrated passive component 5 according to the present embodiment. FIG. 17 shows the layout of wirings 33, 41, 53, openings 38, 44, and bump electrodes 64 through various insulating films (not shown). In FIG. 17, in order to make the drawing easy to see, the wiring 41 is indicated by a dotted line, and the wirings 33 and 53, the openings 38 and 44, and the bump electrode 64 are indicated by a solid line. FIG. 18 is a plan view of the same region as FIG. 17, but the wiring 53 and the bump electrode 64 are indicated by hatching in order to make the drawing easier to see, and the configuration other than the wiring 53 and the bump electrode 64 is shown. Elements are not shown. Further, the cross-sectional view of FIG. 16 shows a conceptual structure of the integrated passive component 5 and does not completely coincide with a cross section obtained by cutting the structure of FIG. 17 at a predetermined position. In FIG. 17, for easy understanding, the connection relationship between the air-core coil 6 constituting the inductor element 111 a and the bump electrode 64 of the integrated passive component 5 is indicated by a one-dot chain line.

  The integrated passive component 5 of the present embodiment constitutes a part of the low-pass filters 108A and 108B of the RF power module 1 as described above. Two integrated passive components 5 and two air-core coils 6 are mounted on the wiring board 3, and one integrated passive component 5 and one air-core coil 6 constitute a low-pass filter 108A for GSM900, The other integrated passive component 5 and the other air-core coil 6 constitute a low-pass filter 108B for DCS1800. That is, the low-pass filters 108 </ b> A and 108 </ b> B are formed by the pair (one set) of integrated passive components 5 and the air-core coil 6. The air-core coil 6 is an inductor element that forms the inductor element 111a of the low-pass filters 108A and 108B.

  In the integrated passive component 5 constituting part of the low-pass filter 108A or the low-pass filter 108B, two inductor elements 111b and 111c and three capacitor elements 112a, 112b, and 112c are formed. Among these, the inductor elements 111b and 111c are spiral inductors formed by forming the wiring 53 in a spiral shape, and the capacitive elements 112a, 112b, and 112c are capacitances formed of the lower electrode 34a formed of the wiring 33 and the insulating film 37. This is an MIM type capacitive element (34) formed by an upper electrode 34 c composed of an insulating film 34 b and wiring 41. The capacitive elements 112a, 112b, and 112c, the inductor element 111b and the capacitive element 112b, and the inductor element 111c and the capacitive element 112c are electrically connected by the wiring 33, the wiring 41, and / or the wiring 53. Yes.

  As shown in FIGS. 17 and 18, the inductor elements (spiral inductors) 111b and 111c are formed by a spiral pattern (spiral pattern) of the wiring 53, and the inductor elements 111b and 111c of the present embodiment are It is a spiral inductor element. In the present embodiment, an inductor element formed by a spiral conductor pattern (conductor layer pattern, wiring pattern) is referred to as a spiral inductor. Each of the inductor elements 111b and 111c is a spiral inductor element formed by a spiral pattern of the same (one) conductor layer (that is, the wiring 53). In FIGS. 17 and 18, the inductor elements 111b and 111c are formed as square spiral inductors whose outer shape (outer shape of the spiral pattern) is a square shape. However, as other forms, outer shapes ( Inductor elements 111b and 111c may be formed as circular spiral inductors having a circular outer shape).

  In the present embodiment, among the inductor elements 111a, 111b, and 111c constituting the low-pass filters 108A and 108B, the inductor element 111a for forming the parallel resonant circuit 113 is not formed in the integrated passive component 5, The inductor element 111b for forming the series resonance circuit 114 and the inductor element 111c for forming the series resonance circuit 115, which are formed by the air-core coil 6 outside the integrated passive component 5, are connected to the wiring 53 in the integrated passive component 5. It is formed by the spiral pattern (spiral pattern).

  Among the capacitive elements 112a, 112b, and 112c formed in the integrated passive component 5, the capacitive element 112a for forming the parallel resonant circuit 113 is one end thereof (that is, the upper electrode 34c or the lower electrode 34a constituting the capacitive element 112a). One side is electrically connected to the bump electrode 64 a via the wiring 53, and the other end (that is, the other of the upper electrode 34 c or the lower electrode 34 a constituting the capacitive element 112 a) is electrically connected to the bump electrode 64 b via the wiring 53. It is connected to the. Further, the bump electrode 64a of the integrated passive component 5 and one end of the air-core coil 6 (that is, the inductor element 111a) are connected to the substrate-side terminal 12a on the upper surface 3a of the wiring substrate 3, the upper surface 3a of the wiring substrate 3, or the internal wiring layer ( The bump electrode 64b of the integrated passive component 5 and the other end of the air-core coil 6 (that is, the inductor element 111a) are electrically connected via the conductor layer), and the board-side terminal 12a and the wiring on the upper surface 3a of the wiring board 3 They are electrically connected via the upper surface 3a of the substrate 3 or an internal wiring layer (conductor layer). For this reason, the air-core coil 6 (that is, the inductor element 111a) and the capacitive element 112a are connected in parallel to form a parallel resonance circuit 113 of a low-pass filter.

  Of the inductor elements 111b and 111c formed in the integrated passive component 5, the inductor element 111b for forming the series resonant circuit 114 has one end electrically connected to the bump electrode 64c corresponding to the ground terminal 118, and the like. The end is electrically connected to one of the upper electrode 34c or the lower electrode 34a of the capacitive element 34 constituting the capacitive element 112b for forming the series resonant circuit 114. The other of the upper electrode 34 c or the lower electrode 34 a of the capacitive element 34 constituting the capacitive element 112 b is electrically connected to the bump electrode 64 a via the wiring 53. For this reason, the capacitive element 112b and the inductor element 111b are connected in series between the bump electrode 64a and the bump electrode 64c to form a series resonance circuit 114 of a low-pass filter.

  Of the inductor elements 111b and 111c formed in the integrated passive component 5, the inductor element 111c for forming the series resonant circuit 115 has one end electrically connected to the bump electrode 64d corresponding to the ground terminal 119, and the like. The end is electrically connected to one of the upper electrode 34c or the lower electrode 34a of the capacitive element 34 constituting the capacitive element 112c for forming the series resonant circuit 115. The other of the upper electrode 34 c or the lower electrode 34 a of the capacitive element 34 constituting the capacitive element 112 c is electrically connected to the bump electrode 64 b through the wiring 53. For this reason, the capacitive element 112c and the inductor element 111c are connected in series between the bump electrode 64b and the bump electrode 64d to form a series resonance circuit 115 of a low-pass filter.

  In the RF power module 1 in which the integrated passive component 5 is mounted on the wiring board 3, the bump electrodes 64 a, 64 b, 64 c and 64 d (corresponding to the bump electrode 18) of the integrated passive component 5 are electrically connected to the board-side terminal 12 a of the wiring board 3. Connected. Among the bump electrodes 64a, 64b, 64c, and 64d, the ground bump electrodes 64c and 64d are electrically connected to the substrate-side terminal 12a for grounding (which can supply a ground potential or a fixed potential) of the wiring board 3. The bump electrodes 64c and 64d are supplied with a ground potential or a fixed potential. Further, both ends of the air-core coil 6 (that is, the inductor element 111a) are electrically connected to the board-side terminal 12a on the upper surface 3a of the wiring board 3. The substrate-side terminal 12a to which one end of the air-core coil 6 is connected and the substrate-side terminal 12a to which the bump electrode 64a of the integrated passive component 5 is connected include the upper surface 3a of the wiring substrate 3 or an internal wiring layer (conductor layer). The board-side terminal 12a to which the other end of the air-core coil 6 is connected and the board-side terminal 12a to which the bump electrode 64b of the integrated passive component 5 is connected are the upper surface 3a of the wiring board 3 or It is electrically connected via an internal wiring layer (conductor layer).

  The RF signal amplified by the power amplifying circuit 102A (102B) in the semiconductor chip 2 passes through the matching circuit 107A (107B) to the low-pass filter circuit 108A (108B) formed by the integrated passive component 5 and the air-core coil 6. Entered. That is, the RF signal amplified by the power amplifier circuit 102A (102B) in the semiconductor chip 2 is input to the bump electrode 64a of the integrated passive component 5 and one end of the air-core coil 6 via the matching circuit 107A (107B). The The input RF signal is attenuated by a predetermined frequency component (harmonic component) through a low-pass filter circuit 108A (108B) formed by the integrated passive component 5 and the air core coil 6, and the integrated passive component 5 and the air core coil are attenuated. 6 is output from the low-pass filter circuit 108A (108B) formed by 6 (that is, output from the bump electrode 64b of the integrated passive component 5 and the other end of the air-core coil 6). The RF signal output from the low-pass filter circuit 108A (108B) formed by the integrated passive component 5 and the air-core coil 6 is transmitted from the upper surface 3a of the wiring board 3 and / or the internal wiring layer (conductor layer) and the via hole 13. It can be taken out (output) from the external connection terminal 12b on the lower surface 3b of the wiring board 3 through a conductor film or the like.

  Unlike the present embodiment, the inductor elements 111a, 111b, and 111c and the capacitive elements 112a, 112b, and 112c constituting the low-pass filters 108A and 108B are formed by individual passive components (for example, three chip inductors and three chip capacitors). In this case, the mounting area for mounting these passive components on the upper surface 3a of the wiring board 3 increases, and the RF power module 1 becomes larger (larger area). Therefore, it is conceivable to apply integrated passive components to the inductor elements 111a, 111b, and 111c and the capacitive elements 112a, 112b, and 112c that constitute the low-pass filters 108A and 108B. Thereby, the mounting area for mounting the passive component on the upper surface 3a of the wiring board 3 can be reduced, and the RF power module 1 can be reduced in size (reduced area).

  FIGS. 19 and 20 are plan views (top views) showing the structure of the integrated passive component 305 of the comparative example, and correspond to FIGS. 17 and 18, respectively.

  In the integrated passive component 305 of the comparative example shown in FIGS. 19 and 20, all the inductor elements 111a, 111b, 111c and the capacitive elements 112a, 112b, 112c constituting the low-pass filter 108A (108B) are in the same integrated passive component 305. Is formed. That is, in the integrated passive component 305 of the comparative example, the inductor element 111a is also formed by a spiral pattern (spiral pattern) of the wiring 53 in the integrated passive component 5 in the same manner as the inductor elements 111b and 111c. In the integrated passive component 305, one end of the inductor element 111a is electrically connected to the bump electrode 64a, the other end is electrically connected to the bump electrode 64b, and the inductor element 111a and the capacitive element 112a are connected in parallel. . Thus, in the integrated passive component 305 of the comparative example, the inductor element 111a for forming the parallel resonant circuit 113 of the low pass filter is also formed in the integrated passive component 305 as a spiral pattern (spiral pattern) of the wiring 53. ing.

  In the passive component 305 of the comparative example, the inductor elements 111a, 111b, and 111c and the capacitive elements 112a, 112b, and 112c constituting the low-pass filter 108A (108B) are all formed in the integrated passive component 305. Of the inductor elements 111a, 111b, and 111c constituting the low-pass filter, the inductor element 111a for forming the parallel resonant circuit 113 of the low-pass filter generates a relatively large amount of heat. Therefore, when the inductor element 111a is formed in the integrated passive component 305, the large power amplified by the power amplifier circuit 102A (102B) in the semiconductor chip 2 is input to the integrated passive component 305 as the low-pass filter 108A (108B). Then, the heat generation amount of the integrated passive component 305 is increased, and the alloy diffusion of the bump electrode 64 (bump electrode 18) made of a solder bump or the like proceeds, and between the bump electrode 64 and the board side terminal 12a of the wiring board 3. There is a possibility that the strength of the solder connection will be reduced. Further, since the upper and lower sides of the wiring (wiring 53) forming the inductor element 111a of the integrated passive component 305 are sandwiched between polyimide resin films (insulating film 43 and insulating film 61) having a relatively low thermal conductivity, the integrated passive component 305 is integrated. It is not easy to improve the heat dissipation characteristics of the heat generated by the inductor element 111a in the passive component 305.

  Further, when the inductor element 111a is formed by the spiral pattern of the wiring (wiring 53) formed in the integrated passive component 305 like the integrated passive component 305 of the comparative example, the wiring (wiring 53) of the inductor element 111a is formed. Since the wiring width and wiring thickness are relatively small (for example, the wiring width is about 20 μm and the wiring thickness is about 8 μm), it is difficult to sufficiently exhibit the characteristics as the inductor element, and the Q value of the inductor element 111a may be insufficient. There is. For example, the Q value of the inductor element 111a is about 30 or less. It is not easy to increase the Q value of the inductor element 111a formed by the spiral pattern of the wiring (wiring 53) in the integrated passive component 305.

  In contrast, in the present embodiment, of the inductor elements 111a, 111b, and 111c and the capacitive elements 112a, 112b, and 112c constituting the low-pass filter 108A (108B), the inductor element 111a is an air core coil outside the integrated passive component 5. 6, all other inductor elements 111 b and 111 c and capacitive elements 112 a, 112 b and 112 c are formed in the integrated passive component 5. The air-core coil 6 as the inductor element 111a is formed by winding a conductor wire (for example, a copper wire) a plurality of times, and the conductor wire has a relatively large wire diameter (for example, the conductor wire has a diameter of about 80 μm). Therefore, the resistance can be reduced, and the Q value of the air-core coil 6 can be easily increased. For example, the Q value of the inductor element 111a composed of the air-core coil 6 can be set to about 50 or more.

  Of the inductor elements 111a, 111b, and 111c constituting the low-pass filter, the inductor element 111a for forming the parallel resonant circuit 113 of the low-pass filter generates a relatively large amount of heat. In the present embodiment, this inductor element The element 111a is formed by the air-core coil 6. Since the air-core coil 6 (inductor element 111a) is directly solder-bonded to the board-side terminal 12a of the wiring board 3 and directly covered with the sealing resin 7, the air-core coil 6 (inductor element 111a). The heat generated in 111a) can be dissipated to the wiring board 3 and the sealing resin 7. Therefore, compared to the comparative example in which the inductor element 111a is formed in the integrated passive component 305, the heat dissipation characteristics of the inductor element 111a can be improved, and the performance and reliability of the RF power module can be improved. Further, since the thermal conductivity of the sealing resin 7 is relatively higher (for example, several times higher) than the thermal conductivity of the polyimide resin film (the insulating film 43 and the insulating film 61), the upper and lower sides of the inductor element 111a are placed on the polyimide resin film. Compared to the integrated passive component 305 of the comparative example having a structure sandwiched between the insulating film 43 and the insulating film 61, the inductor element 111a is configured by the air-core coil 6 as in the present embodiment, and the sealing resin 7 is used. By directly covering, the heat dissipation characteristics of the inductor element 111a can be further improved.

  Of the inductor elements 111a, 111b, and 111c that form the low-pass filters 108A and 108B, the inductor element 111a that forms the parallel resonant circuit 113 greatly affects the characteristics of the low-pass filters 108A and 108B. Therefore, the Q value of the inductor element 111a is Larger is preferred. For this reason, unlike this embodiment, when the inductor element 111a is formed by the spiral pattern of the wiring 53 in the integrated passive component 305 as in the integrated passive component 305 of the comparative example, the Q value of the inductor element 111a is reduced. Although the characteristics of the low-pass filters 108A and 108B may not be sufficiently improved, in the present embodiment, the inductor element 111a is formed by the air-core coil 6 that can easily increase the Q value. It is possible to secure a high Q value of 111a and sufficiently improve the characteristics of the low-pass filters 108A and 108B. Therefore, the performance of the low-pass filters 108A and 108B and the RF power module 1 (electronic device) using the same can be improved. Further, if the air core coil 6 is used for the inductor element 111a, a high Q value inductor element 111a can be easily realized, and the mounting area (occupied area) of the inductor element 111a (air core coil 6) on the wiring board 3 is compared. This is advantageous in reducing the size of the RF power module 1 (electronic device). Further, by using an air-core coil with a low manufacturing cost for the inductor element 111a, the manufacturing cost of the low-pass filters 108 and 108B and the RF power module 1 (electronic device) using the low-pass filters 108 and 108B can be reduced.

  On the other hand, among the inductor elements 111a, 111b, and 111c that form the low-pass filters 108A and 108B, the inductor elements 111b and 111c that form the series resonant circuits 114 and 115 do not significantly affect the characteristics of the low-pass filters 108A and 108B. The Q values of the inductor elements 111b and 111c do not need to be so large, and the heat generation amount is not so large. Therefore, even if the Q values of the inductor elements 111b and 111c are lowered by forming the inductor elements 111b and 111c by the spiral pattern of the wiring 53 in the integrated passive component 5 as in the present embodiment, the low-pass filter The characteristics of 108A and 108B hardly deteriorate. Therefore, the number of passive components constituting the low-pass filters 108A and 108B can be reduced by forming the inductor elements 111b and 111c and the capacitive elements 112a, 112b, and 112c in the integrated passive component 5 as in the present embodiment. The mounting area for mounting passive components (passive components forming the low-pass filters 108A and 108B) on the upper surface 3a of the wiring board 3 can be reduced. Therefore, the RF power module 1 (electronic device) can be reduced in size (reduced area).

  In the present embodiment, the inductor element 111a is constituted by the air-core coil 6, so that a high Q value of the inductor element 111a is ensured, and the characteristics of the low-pass filters 108A and 108B including the integrated passive component 5 and the air-core coil 6 are obtained. By forming the inductor elements 111b and 111c and the capacitive elements 112a, 112b, and 112c in the integrated passive component 5, the low-pass filters 108A and 108B can be configured without degrading the characteristics of the low-pass filters 108A and 108B. The number of passive components to be reduced can be reduced, and the mounting area for mounting passive components (passive components forming the low-pass filters 108A and 108B) on the upper surface 3a of the wiring board 3 can be reduced. For this reason, it is possible to achieve both improvement in characteristics (performance) and downsizing (smaller area) of the low-pass filters 108A and 108B and the RF power module 1 (electronic device) using the same. For example, the GSM band RF signal to be passed by the low-pass filter 108A is suppressed or prevented from being attenuated. Similarly, the DCS band RF signal to be passed by the low-pass filter 108B is suppressed or prevented from being attenuated. The additional efficiency of the power module can be improved.

  Thus, in this embodiment, since the low-pass filters 108A and 108B are formed by the integrated passive component 5 and the air-core coil 6, the loss (attenuation of the RF signal) is extremely reduced and the harmonic component (doubled) is obtained. Wave or triple wave) can be cut (attenuated). Moreover, since each low pass filter 108A, 108B can be formed by two components (integrated passive component 5 and air core coil 6), the RF power module 1 can be reduced in size.

  Further, when trying to cut a harmonic higher than the fourth harmonic by one integrated passive component and one air-core coil, the circuit configuration of the integrated passive component becomes complicated, but the inductor elements 111a, 11b, 111c and Since each low-pass filter 108A, 108B is formed by one parallel resonant circuit 113 and two series resonant circuits 114, 115 formed by the capacitive elements 112a, 112b, 112c, the integrated passive component 5 having a simple circuit configuration. The second and third harmonics can be accurately cut by the air-core coil 6. The harmonics higher than the fourth harmonic are less affected than the second harmonic and the third harmonic, and are less affected, and can be cut by a low-pass filter formed by the passive component 4 mounted on the wiring board 3.

  In the present embodiment, as shown in FIGS. 16 and 17, in the inductor element 111b, the bump electrode 64c connected to the inductor element 111b may be disposed (formed) inside the inductor element 111b. More preferred. That is, it is more preferable to arrange (form) the bump electrode 64c inside the spiral pattern (spiral pattern) of the wiring 53 that forms the inductor element (spiral inductor) 111b. Similarly, in the inductor element 111c, it is more preferable that the bump electrode 64d connected to the inductor element 111c is disposed (formed) inside the inductor element 111c. That is, it is more preferable to dispose (form) the bump electrode 64d inside the spiral pattern (spiral pattern) of the wiring 53 that forms the inductor element (spiral inductor) 111c. In the present embodiment, the bump electrode is disposed (formed) inside the spiral inductor element in order to electrically connect the spiral inductor element to the spiral conductor pattern (spiral pattern) forming the spiral inductor element. Arrangement (formation) of bump electrodes to be connected. Compared with the case where the bump electrodes 64c and 64d are formed outside the inductor elements 111b and 11c (the spiral pattern forming the inductor elements 111b and 11c), the bump electrode 64c is formed as the inductor element 111b (the spiral pattern forming the inductor element 111b) as in the present embodiment. ) And the bump electrode 64d is formed inside the inductor element 111c (a spiral pattern forming the inductor element 111c), the area (planar dimension) of the integrated passive component 5 can be further reduced. Therefore, the integrated passive component 5 can be further downsized (smaller area), and the RF power module 1 on which the integrated passive component 5 is mounted can be further downsized (smaller area).

  Further, as in the present embodiment, the bump electrodes 64c and 64d are arranged inside the spiral pattern of the wiring 53 that forms the inductor elements 111b and 111c, and thereby the wiring 41 that connects the inductor element 111b and the capacitive element 112b. The wiring 53 that forms the inductor element 111b can be prevented from crossing, and similarly, the wiring 41 that connects the inductor element 111c and the capacitive element 112c and the wiring 53 that forms the inductor element 111c are prevented from crossing. be able to. For this reason, the layout of the wiring 41 and the wiring 53 can be simplified, which is advantageous in improving the characteristics of the integrated passive component and improving the manufacturing yield.

  Next, an example of the manufacturing process of the RF power module 1 of the present embodiment will be described with reference to the drawings.

  FIGS. 21-24 is sectional drawing in the manufacturing process of RF power module 1 of this Embodiment. The RF power module 1 of the present embodiment can be manufactured as follows, for example.

  First, as shown in FIG. 21, the wiring board 3 is prepared. The wiring board 3 can be manufactured using, for example, a printing method, a sheet lamination method, a build-up method, or the like.

  Next, as shown in FIG. 22, a bonding material such as solder is required for the board-side terminal 12a on which the semiconductor chip 2, the passive component 4, the integrated passive component 5, the air core coil 6 and the like of the wiring board 3 are to be mounted. Print or apply as appropriate. Then, the semiconductor chip 2, the passive component 4, the integrated passive component 5, and the air core coil 6 are mounted on the upper surface 3 a of the wiring board 3. At this time, the semiconductor chip 2 has a conductor layer 14 on the upper surface 3a of the wiring substrate 3 such that the back surface side (back surface electrode 2b side) faces downward (wiring substrate 3 side) and the front surface side faces upward (face-up bonding). Mounted on top. The integrated passive component 5 is face-down bonded and aligned so that solder bumps (bump electrodes 18) provided on the surface of the integrated passive component 5 face the board-side terminals 12 a on the upper surface 3 a of the wiring board 3. Is done.

  Then, a solder reflow process or the like is performed, and the semiconductor chip 2, the passive component 4, the integrated passive component 5, and the air core coil 6 are fixed (connected) to the wiring substrate 3 via a bonding material such as solder.

  Next, as shown in FIG. 23, a wire bonding step is performed, and the electrodes (bonding pads) 2 a on the surface of the semiconductor chip 3 and the substrate-side terminals 12 a on the upper surface 3 a of the wiring substrate 3 are connected via the bonding wires 8. Connect electrically.

  Next, as shown in FIG. 24, the sealing resin 7 is formed so as to cover the semiconductor chip 2, the passive component 4, the integrated passive component 5, the air core coil 6, and the bonding wire 8 on the upper surface 3 a of the wiring substrate 3. Form. The sealing resin 7 can be formed using, for example, a printing method or a mold for molding (for example, transfer mold). In this way, the RF power module 1 is manufactured. In the case of manufacturing a plurality of RF power modules 1 from a single wiring board 3, after the sealing resin 7 is formed, the wiring board 3 and the sealing resin 7 are divided (cut) at predetermined positions to obtain individual pieces. The RF power module 1 can be obtained.

  Next, an example of the manufacturing process of the air core coil 6 and the mounting (mounting) process of the air core coil 6 on the wiring substrate 3 among the manufacturing processes of the RF power module 1 of the present embodiment will be described.

  25 to 29 are explanatory diagrams of the manufacturing process and mounting process of the air-core coil 6 used in the RF power module 1 of the present embodiment. The air-core coil 6 used in the present embodiment can be manufactured, for example, as follows and mounted on the wiring board 3.

  First, as shown in FIG. 25, a copper wire (copper wire with a coating) is formed on a winding core (winding core) 282 protruding from a sleeve 281 of a manufacturing apparatus (air core coil automatic winding apparatus, air core coil manufacturing apparatus). ) Or the like is wound a predetermined number of times. Then, the conductor wire 283 is cut at a predetermined position. Thereby, a state in which the air-core coil 6 made of the conductor wire 283 is wound around the winding core 282 is obtained.

  Next, as shown in FIG. 26, the backup stage 284 is raised from below, the mounting nozzle 285 is lowered from above, and the air core coil 6 wound around the winding core 282 is connected to the mounting nozzle 285 and the backup stage. 284. 27 is a view of the mounting nozzle 285 and the air-core coil 6 as viewed from the direction of the arrow 286 in FIG. 26. As shown in FIG. 27, the mounting nozzle 285 has an opening (hole) for suction. A semi-circular tip portion having a tip is provided, and the air-core coil 6 can be adsorbed to the tip portion.

  Next, as shown in FIG. 28, the core 282 is retracted with respect to the sleeve 281, and the core 282 is extracted (extracted) from the air-core coil 6 formed of the conductor wire 283. As a result, the air-core coil 6 composed of the conductor wire 283 wound in a spiral shape is obtained. This air-core coil 6 is attracted to the mounting nozzle 285 even when the core 282 is removed from the air-core coil 6. (Pick up)

  Then, as shown in FIG. 29, the mounting nozzle 285 is raised, the backup stage 284 is lowered, and the air-core coil 6 attracted (pickup) to the mounting nozzle 285 is moved together with the mounting nozzle 285. The air-core coil 6 is mounted on the wiring board 3 (not shown in FIG. 29). That is, the air-core coil 6 adsorbed by the mounting nozzle 285 is moved onto the wiring board 3 together with the mounting nozzle 285, and is placed on the board-side terminal 12a on the upper surface 3a of the wiring board 3 where the air-core coil 6 is to be mounted. An air core coil 6 is disposed. Thus, the air-core coil 6 attracted by the mounting nozzle 285 is quickly mounted on the upper surface 3a of the wiring board 3 without being stored in a component feeder or the like.

  Then, the steps of FIGS. 25 to 29 are repeated.

  Unlike this embodiment, a large amount of air-core coils are stored in a storage case of a component feeder (bulk feeder), and one air-core coil 6 is taken out from the stored large amount of air-core coils ( When mounting on the wiring board 3 (by picking up), the air core coils may be entangled with each other, which may cause a pickup failure of the air core coils.

  On the other hand, in the present embodiment, as described above, the conductor wire 283 is wound around the core 282 of the air core coil automatic winding device, and then the conductor wire 283 is cut and the core 282 is pulled out. Individual air-core coils 6 are formed, and the air-core coils 6 are mounted (mounted) on the wiring board 3 by an automatic pickup mechanism (mounting nozzle 285) without being stored in a component feeder or the like. That is, in this embodiment, after forming one air-core coil 6, this air-core coil 6 is mounted on the wiring board 3. After forming one air-core coil 6, Before the coil 6 is mounted on the wiring board 3, the air core coil 6 is not stored in a state where a plurality of separated air core coils are intertwined. For this reason, it is possible to prevent the pickup defect of the air-core coil from occurring, and the air-core coil 6 can be accurately mounted on the wiring board 3. Therefore, the manufacturing yield of the RF power module on which the air-core coil 6 is mounted can be improved.

(Embodiment 2)
FIG. 30 is a conceptual cross-sectional view showing the structure of an RF power module 1a according to another embodiment of the present invention, and corresponds to FIG. 5 of Embodiment 1 described above. FIG. 31 is a cross-sectional view of an essential part of the integrated passive component 5c used in the RF power module 1a of FIG. 30, and corresponds to FIG. 16 of the first embodiment.

  In the RF power module 1 of the first embodiment, the integrated passive component 5 is electrically connected to the board-side terminal 12a of the wiring board 3 via the bump electrode 18, but the RF power module of the present embodiment. In 1a, the bonding pad (electrode, pad electrode) 18a on the surface 5a of the integrated passive component 5c is electrically connected to the board-side terminal 12a of the wiring board 3 through the bonding wire 8. In the first embodiment, the integrated passive component 5 is mounted face-down on the upper surface 3 a of the wiring board 3. However, in this embodiment, the integrated passive component 5 c is face-up on the upper surface 3 a of the wiring board 3. Implemented in.

  In the integrated passive component 5c of this embodiment, as shown in FIG. 31, the gold film 63 is exposed and the bonding pad 18a is formed without forming the bump electrode 64. Other configurations of the integrated passive component 5c are substantially the same as those of the integrated passive component 5 of the first embodiment. Then, as shown in FIG. 30, after the back surface 5b of the integrated passive component 5c is bonded (mounted) to the upper surface 3a of the wiring board 3 via the bonding material 15a, the bonding pad 18a of the integrated passive component 5c is bonded in the wire bonding process. And the board-side terminal 12 a on the upper surface 3 a of the wiring board 3 are electrically connected by a bonding wire 8. Since other configurations of the present embodiment are substantially the same as those of the first embodiment, description thereof is omitted here.

  Also in the present embodiment, substantially the same effect as in the first embodiment can be obtained.

(Embodiment 3)
FIG. 32 is a conceptual top view (plan view) showing the structure of an RF power module 1b according to another embodiment of the present invention, and FIG. 33 is a conceptual sectional view of the RF power module 1b. This corresponds to FIGS. 4 and 5 of the first embodiment. FIG. 32 shows a state in which the sealing resin 7 is seen through. Further, although corresponding to the cross-sectional view (side cross-sectional view) of FIG. 33, the conceptual structure of the RF power module 1b is shown and completely matches the cross-section obtained by cutting the structure of FIG. 32 at a predetermined position. Not.

  In the RF power module 1 of the first embodiment, the air-core coil 6 is directly mounted (mounted or arranged) on the wiring board 3, but in the RF power module 1b of the present embodiment, the integrated passive component 5d. An air core coil 6 is mounted (arranged) on the top.

  In the integrated passive component 5d of the present embodiment, the bonding pad 18a for connecting the bonding wire 8 is formed on the surface 5a of the integrated passive component 5d as in the integrated passive component 5c of the second embodiment, and the integrated passive component 5d. An electrode 18b for connecting the end of the air-core coil 6 is formed on the surface 5a. At this time, a bonding pad 18a is formed instead of the bump electrodes 64c and 64d, and an electrode 18b is formed instead of the bump electrodes 64a and 64b. Other configurations of the integrated passive component 5c are substantially the same as those of the integrated passive component 5 of the first embodiment. 32 and 33, after the back surface 5b of the integrated passive component 5d is bonded (mounted) to the upper surface 3a of the wiring board 3 through the bonding material 15a, the integrated passive component 5d is bonded in a wire bonding step. The bonding pads 18a and the board-side terminals 12a on the upper surface 3a of the wiring board 3 are electrically connected by bonding wires 8, and the air-core coil 6 is mounted on the surface 5a of the integrated passive component 5d, and solder (not shown) The air core coil 6 and the electrode 18b on the surface 5a of the integrated passive component 5d are electrically connected via a). After the air-core coil 6 is mounted on the surface 5a of the integrated passive component 5d, the bonding pads 18a of the integrated passive component 5d and the board-side terminals 12a on the upper surface 3a of the wiring board 3 are electrically connected by the bonding wires 8. You can also. Since other configurations of the present embodiment are substantially the same as those of the first embodiment, description thereof is omitted here.

  Also in the present embodiment, substantially the same effect as in the first embodiment can be obtained. Further, since the air-core coil 6 is mounted on the integrated passive component 5d, the RF power module on which the integrated passive component and the air-core coil are mounted can be further downsized (smaller in area).

(Embodiment 4)
FIG. 34 is a conceptual principal plan view (major part top view) showing the structure of the RF power module 1c according to another embodiment of the present invention, and shows a state where the sealing resin 7 is seen through. . 34 is a plan view, but in order to make the drawing easy to see, the conductor layer 19a which is the conductor layer (wiring layer, conductor portion) on the upper surface 3a of the wiring board 3 and the board side terminal 12a are hatched. It is shown.

  In the RF power module 1 of the first embodiment, the low-pass filters 108A and 108B are formed by the air-core coil 6 and the integrated passive component 5. However, in the RF power module 1c of the present embodiment, the wiring board 3 Low-pass filters 108A and 108B are formed by the spiral inductor (spiral inductor element) 19 formed by the conductor layer (conductor pattern, wiring, wiring layer, conductor portion) 19a and the integrated passive component 5.

  In the RF power module 1c of this embodiment, among the inductor elements 111a, 111b, and 111c constituting the low-pass filters 108A and 108B, the inductor element 111b for forming the series resonant circuit 114 and the series resonant circuit 115 are formed. The inductor element 111c is formed by a spiral pattern of the wiring 53 in the integrated passive component 5 as in the first embodiment, but is an inductor for forming the parallel resonance circuit 113. Unlike the first embodiment, the element 111 a is formed by a spiral inductor 19 formed by a spiral pattern (spiral pattern) of the conductor layer 19 a of the wiring board 3. In FIG. 34, the spiral inductor 19 constituting the inductor element 111a is formed by the conductor layer (conductor pattern) 19a of the same layer as the board-side terminal 12a formed on the upper surface 3a of the wiring board 3. The spiral inductor that constitutes the inductor element 111a is formed by a spiral pattern (spiral pattern) of a conductor layer (conductor pattern, wiring, wiring layer, conductor portion) inside the wiring board 3 (between the insulating layers 11). 19 can also be formed. That is, in the present embodiment, the inductor element 111a of the low-pass filters 108A and 108B is formed by a spiral inductor element formed by a spiral conductor pattern formed on the upper surface 3a of the wiring board 3 or inside. In FIG. 34, the spiral inductor 19 is formed as a rectangular spiral inductor whose outer shape (the outer shape of the spiral pattern) is a square shape. However, as another form, the outer shape (the outer shape of the spiral pattern) is a circular shape. The spiral inductor 19 can also be formed as a circular spiral inductor.

  The configuration of the integrated passive component 5 of the present embodiment is the same as that of the integrated passive component 5 of the first embodiment. When the integrated passive component 5 is mounted on the upper surface 3a of the wiring board 3, the bump electrode 64b of the integrated passive component 5 is connected to the substrate-side terminal 12a electrically connected to one end of the spiral inductor 19, and the spiral inductor A substrate side electrically connected to the other end of 19 via a conductor or a conductor film in via hole 13 (not shown in FIG. 34) of wiring board 3 and a wiring layer (wiring pattern) 19b inside wiring board 3 The bump electrode 64a of the integrated passive component 5 is connected to the terminal 12a, and the bump electrodes 64c and 64d of the integrated passive component 5 are connected to the other substrate side terminal 12a not connected to the spiral inductor 19.

  The other configuration of the RF power module 1c according to the present embodiment is substantially the same as that of the RF power module 1 according to the first embodiment, and thus the description thereof is omitted here.

  When the inductor element 111a is formed by the spiral pattern of the wiring (wiring 53) formed in the integrated passive component 305 as in the integrated passive component 305 of the comparative example, the wiring of the wiring (wiring 53) constituting the inductor element 111a. Since the width and the wiring thickness are relatively small, the Q value of the inductor element 111a may be insufficient. However, in the present embodiment, the upper surface 3a of the wiring board 3 or the inner conductor layer 19a (the spiral shape of the inner conductor layer 19a). An inductor element 111a of the low-pass filters 108A and 108B is formed by the spiral inductor 19 formed by the conductor pattern. Since the thickness of the conductor layer 19a of the wiring board 3 for forming the spiral inductor 19 (inductor element 111a) can be made relatively large, the resistance can be lowered, and the spiral inductor 19 (inductor element 111a). The Q value of can be increased. Therefore, also in the present embodiment, it is possible to secure a high Q value of the inductor element 111a and improve the characteristics of the low-pass filters 108A and 108B, and the performance of the low-pass filters 108A and 108B and the RF power module 1c using the low-pass filters 108A and 108B. Can be improved. Further, the inductor element 111a is formed in the integrated passive component 305 by forming the spiral inductor 19 constituting the inductor element 111a by the upper surface 3a of the wiring board 3 or the inner conductor layer 19a (a spiral conductor pattern thereof). Compared to the comparative example, the heat dissipation characteristics of the inductor element 111a can be improved, and the reliability of the RF power module can be improved.

  If the inductor element 111a is formed by the air-core coil 6 as in the first embodiment, it is more preferable because a higher Q value of the inductor element 111a can be easily secured and the heat dissipation characteristics of the inductor element 111a can be further improved. However, even if the spiral inductor 19 constituting the inductor element 111a is formed by the upper surface 3a of the wiring board 3 or the inner conductor layer 19a (a spiral conductor pattern thereof) as in the present embodiment, the inductor element 111a is high. The Q value can be ensured, and the heat radiation characteristics of the inductor element 111a can be improved.

  In the present embodiment, since the air-core coil 6 is not used to form the low-pass filters 108A and 108B, the thickness of the sealing resin 7 can be made relatively thin, and the RF power module can be made thinner. Is advantageous. Further, when the spiral inductor 19 constituting the inductor element 111a is formed by the upper surface 3a of the wiring board 3 or the inner conductor layer 19a (a spiral conductor pattern thereof) as in the present embodiment, the above-described first embodiment. Compared with the case where the inductor element 111a is formed by the air-core coil 6 as described above, there is a possibility that the area (planar dimension) of the wiring board 3 is increased. For this reason, it is more advantageous for the RF power module to have a smaller area (smaller size) if the spiral inductor 19 constituting the inductor element 111a is formed by the air-core coil 6 as in the first embodiment.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  The present invention is suitable for application to an electronic device mounted on a mobile communication device and a low-pass filter used therefor.

It is a circuit block diagram of the amplifier circuit which comprises the RF power module which is one embodiment of this invention. It is a circuit diagram which shows the circuit structural example of a low-pass filter. It is explanatory drawing of an example of the digital mobile telephone system using the RF power module which is one embodiment of this invention. It is a top view which shows the structure of RF power module. It is sectional drawing of RF power module. It is a conceptual perspective view of RF power module. It is principal part sectional drawing of a semiconductor chip at the time of forming a semiconductor amplifier element by LDMOSFET. It is principal part sectional drawing of the semiconductor chip at the time of forming a semiconductor amplifier element with a heterojunction bipolar transistor. It is principal part sectional drawing in the manufacturing process of the integrated passive component which is one embodiment of this invention. FIG. 10 is a fragmentary cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 9; FIG. 11 is a fragmentary cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 10; FIG. 12 is a fragmentary cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 11; FIG. 13 is a fragmentary cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 12; FIG. 14 is an essential part cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 13; FIG. 15 is an essential part cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 14; FIG. 16 is a fragmentary cross-sectional view of the integrated passive component during a manufacturing step following that of FIG. 15; It is a top view which shows the structure of the integrated passive component which is one embodiment of this invention. It is a top view which shows the structure of the integrated passive component which is one embodiment of this invention. It is a top view which shows the structure of the integrated passive component of a comparative example. It is a top view which shows the structure of the integrated passive component of a comparative example. It is sectional drawing in the manufacturing process of RF power module. It is sectional drawing in the manufacturing process of the RF power module following FIG. FIG. 23 is a cross-sectional view of the RF power module subsequent to FIG. 22 during the manufacturing process. FIG. 24 is a cross-sectional view of the RF power module subsequent to FIG. 23 during the manufacturing process. It is explanatory drawing of the manufacturing process and mounting process of an air-core coil. It is explanatory drawing of the manufacturing process and mounting process of an air-core coil. It is explanatory drawing of the manufacturing process and mounting process of an air-core coil. It is explanatory drawing of the manufacturing process and mounting process of an air-core coil. It is explanatory drawing of the manufacturing process and mounting process of an air-core coil. It is sectional drawing which shows the structure of RF power module of other embodiment of this invention. It is principal part sectional drawing of the integrated passive component used for RF power module of FIG. It is a top view which shows the structure of RF power module of other embodiment of this invention. It is sectional drawing which shows the structure of RF power module of other embodiment of this invention. It is a principal part top view which shows the structure of the RF power module of other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 RF power module 1a RF power module 1b RF power module 1c RF power module 2 Semiconductor chip 2a Electrode 2b Back surface electrode 3 Wiring board 3a Upper surface 3b Lower surface 4 Passive component 5 Integrated passive component 5a Front surface 5b Back surface 5c Integrated passive component 5d Integrated passive component 6 Air core coil 7 Sealing resin 8 Bonding wire 11 Insulator layer 12a Substrate side terminal 12b External connection terminal 12c Reference potential supply terminal 13 Via hole 14 Conductor layer 15 Solder 15a Bonding material 17 Solder 18 Bump electrode 18a Bonding pad 18b Electrode 19 Spiral inductor 19a Conductor layer 31 Substrate 32 Insulating film 33 Wiring 34 Capacitor element 34a Lower electrode 34b Capacitor insulating film 34c Upper electrode 35 Insulating film 36 Opening 37 Insulating film 38 Opening 41 Wiring 43 Insulating film 43a Film 44 Opening 45 Pad part 51 Seed film 53 Wiring 54 Nickel film 61 Insulating film 62 Opening 63 Gold film 64 Bump electrodes 64a, 64b, 64c, 64d Bump electrodes 102A, 102B Power amplification circuits 102A1, 102A2, 102A3, 102B1, 102B2, 102B3 Amplifier stages 102AM1, 102AM2, 102BM1, 102BM2 Matching circuit 103 Peripheral circuit 103A Control circuit 103A1 Power supply control circuit 103A2 Bias voltage generation circuit 103B Bias circuits 104a, 104b Input terminals 105A, 105B Matching circuits 106a, 106b Output terminals 107A, 107B Matching circuits 108A, 108B Low-pass filters 111a, 111b, 111c Inductor elements 112a, 112b, 112c Capacitance element 113 Parallel resonant circuit 11 , 115 Series resonance circuit 116 Input terminal 117 Output terminal 118, 119 Ground terminal 151 Front end module 152 Baseband circuit 153 Modulation / demodulation circuit FLT1, FLT2 Filter 154a Switch circuit 154b Switch circuit 156 Demultiplexers C5, C6 Capacitors CNT1, CNT2 Switching signal 201 Semiconductor substrate 202 Epitaxial layer 203 P-type well 204 Gate insulating film 205 Gate electrode 206 Side wall spacer 207 n ⁻ type offset drain region 208 n type offset drain region 209 n ⁺ type drain region 210 n ⁻ type source region 211 n ⁺ -type source region 212 p-type halo region 213 trench 214 p-type punched layer 215 ^{p +} -type semiconductor region 221 silicon nitride film 222 a silicon oxide film 223 Conta Tohoru 224 Plug 225 source electrode 226 drain electrode 227 a silicon oxide film 228 through hole 229 wiring 230 surface protective film 231 source backside electrode 251 GaAs substrate 252 subcollector layer 253 HBT
254 Collector electrode 255 Collector mesa 256 Base mesa 257 Base electrode 258 Emitter layer 259 Emitter electrode 261 Insulating film 262 Contact hole 263 Collector wiring 264 Insulating film 265 Through hole 266 Emitter wiring 282 Core 283 Conductor line 284 Backup stage 285 Mounting nozzle 286 Arrow 305 Integrated passive components

Claims (20)

An electronic device having a power amplifier circuit,
A wiring board;
Active elements that are mounted on the main surface of the wiring board and that constitute the power amplifier circuit;
A low pass filter circuit mounted on the main surface of the wiring board and electrically connected to the power amplifier circuit;
Including
The low-pass filter circuit includes an air-core coil and an integrated passive element,
The integrated passive element includes an inductor element and a capacitive element. The electronic device according to claim 1.
The low-pass filter circuit is formed by first, second and third inductor elements and first, second and third capacitor elements,
A parallel resonator of the low-pass filter circuit is formed by the first inductor element and the first capacitor element,
A series resonator of the low-pass filter circuit is formed by the second inductor element, the second capacitor element, the third inductor element, and the third capacitor element,
The electronic device, wherein the first inductor element is constituted by the air-core coil. The electronic device according to claim 2.
The electronic device, wherein the second and third inductor elements are formed in the integrated passive element. The electronic device according to claim 3.
The electronic device, wherein the second and third inductor elements are formed by a copper wiring spiral pattern in the integrated passive element. The electronic device according to claim 2.
The electronic device, wherein the first, second and third capacitive elements are formed in the integrated passive element. The electronic device according to claim 5.
The electronic apparatus according to claim 1, wherein the first, second and third capacitive elements are MIM type capacitive elements. The electronic device according to claim 1.
An electronic apparatus, wherein an output of the power amplifier circuit is connected to the low-pass filter circuit. The electronic device according to claim 7.
The electronic device further includes an antenna switch,
An electronic apparatus, wherein an output of the low-pass filter circuit is connected to the antenna switch. The electronic device according to claim 1.
A plurality of passive elements are formed in the integrated passive element, and no active element is formed. The electronic device according to claim 9.
The integrated passive element is:
A semiconductor substrate;
A capacitive element formed on the semiconductor substrate;
A resin material film formed on the capacitive element;
A spiral inductor element formed on the resin material film;
An electronic device comprising: The electronic device according to claim 1.
The electronic device is an electronic device mounted on a mobile communication device. The electronic device according to claim 11.
The electronic device has two power amplification circuits,
The low-pass filter circuit is connected to each of the two systems of the power amplifier circuit,
The electronic apparatus characterized in that the transmission frequency bands of the two power amplifier circuits are 0.9 GHz band and 1.8 GHz band, respectively. The electronic device according to claim 1.
The electronic device according to claim 1, wherein the air-core coil is disposed on the integrated passive element. A low-pass filter comprising a plurality of inductor elements and capacitive elements,
The low-pass filter is formed of an air-core coil and an integrated passive element. The low pass filter according to claim 14,
The low-pass filter is formed by first, second and third inductor elements and first, second and third capacitor elements,
A parallel resonator of the low-pass filter is formed by the first inductor element and the first capacitor element,
A series resonator of the low-pass filter is formed by the second inductor element, the second capacitor element, the third inductor element, and the third capacitor element, respectively.
The first inductor element is constituted by the air-core coil;
A low-pass filter, wherein the second and third inductor elements and the first, second and third capacitive elements are formed in a pre-integrated passive element. A method of manufacturing an electronic device having a power amplifier circuit and a low-pass filter circuit composed of a plurality of inductor elements and capacitive elements,
The low-pass filter circuit is formed by an air-core coil and an integrated passive element,
The air-core coil is
(A) a step of winding a conductor wire around a winding core;
(B) cutting the conductor wire to form the air-core coil made of the conductor wire;
(C) extracting the core from the air-core coil;
(D) mounting the air-core coil on the electronic device;
Manufactured by a process including the above and mounted on the electronic device,
A method of manufacturing an electronic device, wherein the air-core coil is not stored in a state where a plurality of air-core coils are intertwined between the steps (c) to (d). The method of manufacturing an electronic device according to claim 16,
The low-pass filter circuit is formed by first, second and third inductor elements and first, second and third capacitor elements,
A parallel resonator of the low-pass filter circuit is formed by the first inductor element and the first capacitor element,
A series resonator of the low-pass filter circuit is formed by the second inductor element, the second capacitor element, the third inductor element, and the third capacitor element,
The method of manufacturing an electronic device, wherein the first inductor element is constituted by the air-core coil. In the manufacturing method of the electronic device of Claim 17,
The output of the power amplifier circuit is connected to the low pass filter circuit;
The electronic device further includes an antenna switch,
An output method of the low-pass filter circuit is connected to the antenna switch. An electronic device having a power amplifier circuit,
A wiring board;
Active elements that are mounted on the main surface of the wiring board and that constitute the power amplifier circuit;
An integrated passive element mounted on the wiring board;
Have
An electronic apparatus, wherein a low-pass filter circuit is formed by a first inductor element having a spiral pattern formed by a conductor layer of the wiring board and the integrated passive element. The electronic device according to claim 19.
The low-pass filter circuit is formed by the first inductor element, the second and third inductor elements and the first, second, and third capacitor elements formed in the integrated passive element,
A parallel resonator of the low-pass filter circuit is formed by the first inductor element and the first capacitor element,
A series resonator of the low-pass filter circuit is formed by the second inductor element, the second capacitor element, the third inductor element, and the third capacitor element, respectively.