JP2006157025A - 高効率散熱及び光度のチップ - Google Patents

高効率散熱及び光度のチップ Download PDF

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JP2006157025A
JP2006157025A JP2005346314A JP2005346314A JP2006157025A JP 2006157025 A JP2006157025 A JP 2006157025A JP 2005346314 A JP2005346314 A JP 2005346314A JP 2005346314 A JP2005346314 A JP 2005346314A JP 2006157025 A JP2006157025 A JP 2006157025A
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chip
heat dissipation
highly efficient
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Chiu-Chung Yang
秋忠 楊
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Abstract

【課題】パッケージ不要であるがSMD(Surface Mounted Devices)及びフリップチップLED機能を持つ為、パッケージコストを削減することをその特徴とする本発明の高効率散熱及び光度のチップを提案する。
【解決手段】本発明の高効率散熱及び高度のチップは、チップ製作エッチング過程において、発光層のエッチング面積を減少させ、比較的大きな面積の発光層を発光させることができ、またP、N電極箇所においても更に大きな面積のP、N電極導電層を形成することができるので、発光面及び光反射面を増加、散熱効率を向上させ、また、パッケージ不要であるが、SMD(Surface Mounted Devices)とフリップチップLED機能を持っている為、パッケージコストを削減できることを特徴とする。
【選択図】図5

Description

本発明は、高効率散熱及び光度のチップに関するものである。チップ製作エッチング過程において、発光層のエッチング面積を減少させ、並びに、P、N極箇所において大きな面積の導電層を形成することができるので、発光面面積の拡大、導電面積の増加、発光面及び光反射面の増加により、散熱効率を向上させ、パッケージ不要であるが、SMD(Surface Mounted Devices)とフリップチップLED機能を持っている、高効率散熱及び光度のチップである。
図1に示すとおり、従来品のチップ製造において、N極1もしくはP極2の一端(極)は、必ずエッチング3しなければならないが、エッチング3が発光層4を破壊することにより、発光層4の面積が減少、光度もまた減少するという問題があり、欠点となっている。
図2、3に示すとおり、チップ5は非常に微小なもので、現在のチップのN極6、P極7が提供するボンディングワイヤ8箇所の電極面積Aは皆、幾倍も大きく明らかに発光面積減少の問題があるのは、即ち、従来品のチップの課題であり、通常ボンディングワイヤ面積は100μ前後である。
図2にSMD(Surface Mounted Devices)製法製作のLEDチップの半田接合技術を示す。チップ5には必ずボンディングワイヤ位置を予め保留しなければならず、また、チップ5はボンディングワイヤによって基板に導通、更に基板によって回路に導通、PCB回路板に半田接合する。
図3に、従来品のチップ散熱差を示す。原因は、伝統的な散熱は、距離が長く(L)散熱導熱面積(S)が小さい為、導熱が難しく、高温となってしまうという課題がある。
図4に示すとおり、従来のチップのP、N極面積が非常に小さく、ボンディングワイヤまたは予め入れる半田バンプ9の方法しかできないが、本発明では、直接一般の半田方式で半田を接合する為、接合コストを削減できる。
図4に、フリップチップLED製作技術を示す。そのチップの予め入れた半田バンプ9によってチップを基板上に半田接合した後、基板は一般の半田によってPCB回路板に接合される。
本発明の目的は、パッケージ不要であるがSMD(Surface Mounted Devices)及びフリップチップLED機能を持つ為、パッケージコストを削減することをその特徴とする高効率散熱及び光度のチップを提案することである。
請求項1の発明は、PN電極のそれぞれと連結する大きな面積を持つ導電(導熱)層を増設、その構造により、発光層のエッチングされる面積を減少、光度を増強、大きな面積を有することにより高効率散熱し、光反射面効果を向上、パッケージ不要でSMD(Surface Mounted Devices)及びフリップチップLED機能を持つ為、パッケージコストを削減することを特徴とする高効率散熱及び光度のチップとしている。
請求項2の発明は、請求項1記載の高効率散熱及び光度のチップにおいて、導電導熱層は金、銀、銅、アルミ、錫、合金とすることを特徴とする高効率散熱及び光度のチップとしている。
本発明の高効率散熱及び光度のチップは、次のような効果を持つ。
1.一般のフリップチップとSMD(Surface Mounted Devices)はチップに半田接合、どちらも、基板に半田接合またはボンディングワイヤのステップが必然的に加えられ、更に一般の半田接合によってPCB回路板に接合されるが、本発明の高効率散熱及び光度のチップは、基板及びそれに関連するボンディングワイヤや半田接合不要である為、それらの作業を省略、大きな面積を持つ導電材位置に直接PCB回路板を半田接合固着するので、パッケージ不要であるが、SMD(Surface Mounted Devices)とフリップチップLEDの機能を持ち、パッケージコストを削減できるという特徴を持つ。
2.発光層エッチング面積を減少することで発光層面積を増加、発光光度を増加することを特徴とする。
3.大きい面積を持つ導電導熱層により、効率的な伝導散熱が可能、導電効果にも優れ、簡単な一般半田接合を採用する他、導電導熱層は光反射面とすることができ、その発光及び光反射の光度向上の効果を持つことを特徴とする。
図5に、本発明の高効率散熱及び光度のチップの構造を示す。チップ10の一面は、エッチングによってP極20とN極30を設け、その後P極20とN極30箇所には二つの大きな面積を持つ導電材40、50を形成、導電材40、50はそれぞれP極20とN極30に導通、これにより放大電極に達し、大きな面積で導熱する為、高効率散熱となる。
また、別の効果についてであるが、光反射面積が増加、SMD(Surface Mounted Devices)とLED機能を持つがパッケージ不要である為、パッケージコストを削減できる。
図6に示すとおり、本発明の高効率散熱及び光度のチップは、、従来品チップとの通常散熱差を特徴とし、それは、チップ製作時に発光層エッチングを減少することによる。図3のAと図6のBの差異でもわかるように、従来品図3のAはそこがボンディングワイヤ提供位置である為、エッチング面積が大きくなるが、本発明ではボンディングワイヤ不要であるので、そのエッチング面積が大幅に減少、よって発光面積を増加、並びにその極性面に大きい面積を持つ導電材40、50を形成する。導電材は、金、銀、銅、アルミ、錫、合金とし、面積の大きい導電材40、50は同時に導熱及び反射効果を持ち、正方向の光度を増強、大きい面積による導電導熱材の導熱効果が優れている為、効率的に散熱できる。
従来品のチップ本体は、比較的微小で、そのP、N極は更に小さく、後続する加工の為に、まず先行してP、N極に金、銀、半田バンプを入れるか、糸を半田接合するが、大きい面積の導電材P、N極を具える本発明は、直接半田接合し、金、銀、半田バンプを入れる必要がなく、且つ、ボンディングワイヤ不要である為、製造、パッケージコストの大幅な削減及び半田接合時間の節約ができる。
図5に示すとおり、チップ製作においては、形成方式を用い、多層の基本形状を作成、エッチング方式により、P、N極性を区分、図示したP、N極側面には、製作時、大きい面積の導電材40、50を形成でき、PCB回路板60に固定した場合(図7参照)、大きい面積の導電材40、50によって、通常の半田接合の半田70をPCB回路板60に半田接合固着、生産能力を向上、半田接合製造時間を節減する。
従来品のチップ断面図である。 従来品のSMD(Surface Mounted Devices)チップを基板に半田接合更に基板をPCB回路板に半田接合した断面図である。 従来品チップの下方図である。 従来品#チップに半田バンプを用い、それを基板に半田接合し、並びに基板をPCB回路板に半田接合した断面図である。 本発明の高効率散熱及び光度のチップの断面図である。 本発明の高効率散熱及び光度のチップの下方図である。 本発明の高効率散熱及び光度のチップをPCB回路板に半田接合した見取図である。
符号の説明
1 N極
2 P極
3 エッチング
4 発光層
5 チップ
6 N極
7 P極
8 ボンディングワイヤ
9 半田バンプ
10 チップ
20 P極
30 N極
40 導電材
50 導電材
60 PCB回路板
70 半田

Claims (2)

  1. PN電極のそれぞれと連結する大きな面積を持つ導電(導熱)層を増設、その構造により、発光層のエッチングされる面積を減少、光度を増強、大きな面積を有することにより高効率散熱し、光反射面効果を向上、パッケージ不要でSMD(Surface Mounted Devices)及びフリップチップLED機能を持つ為、パッケージコストを削減することを特徴とする高効率散熱及び光度のチップ。
  2. 請求項1記載の高効率散熱及び光度のチップにおいて、導電導熱層は金、銀、銅、アルミ、錫、合金とすることを特徴とする高効率散熱及び光度のチップ。
JP2005346314A 2004-12-01 2005-11-30 高効率散熱及び光度のチップ Pending JP2006157025A (ja)

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US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
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JP2005093970A (ja) * 2003-09-16 2005-04-07 Korai Kagi Kofun Yugenkoshi 発光装置

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