JP2006157025A - 高効率散熱及び光度のチップ - Google Patents
高効率散熱及び光度のチップ Download PDFInfo
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- JP2006157025A JP2006157025A JP2005346314A JP2005346314A JP2006157025A JP 2006157025 A JP2006157025 A JP 2006157025A JP 2005346314 A JP2005346314 A JP 2005346314A JP 2005346314 A JP2005346314 A JP 2005346314A JP 2006157025 A JP2006157025 A JP 2006157025A
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- chip
- heat dissipation
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- efficient heat
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 25
- 230000000694 effects Effects 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- 229910000679 solder Inorganic materials 0.000 description 21
- 239000004020 conductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000005476 soldering Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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Abstract
【解決手段】本発明の高効率散熱及び高度のチップは、チップ製作エッチング過程において、発光層のエッチング面積を減少させ、比較的大きな面積の発光層を発光させることができ、またP、N電極箇所においても更に大きな面積のP、N電極導電層を形成することができるので、発光面及び光反射面を増加、散熱効率を向上させ、また、パッケージ不要であるが、SMD(Surface Mounted Devices)とフリップチップLED機能を持っている為、パッケージコストを削減できることを特徴とする。
【選択図】図5
Description
請求項2の発明は、請求項1記載の高効率散熱及び光度のチップにおいて、導電導熱層は金、銀、銅、アルミ、錫、合金とすることを特徴とする高効率散熱及び光度のチップとしている。
1.一般のフリップチップとSMD(Surface Mounted Devices)はチップに半田接合、どちらも、基板に半田接合またはボンディングワイヤのステップが必然的に加えられ、更に一般の半田接合によってPCB回路板に接合されるが、本発明の高効率散熱及び光度のチップは、基板及びそれに関連するボンディングワイヤや半田接合不要である為、それらの作業を省略、大きな面積を持つ導電材位置に直接PCB回路板を半田接合固着するので、パッケージ不要であるが、SMD(Surface Mounted Devices)とフリップチップLEDの機能を持ち、パッケージコストを削減できるという特徴を持つ。
2.発光層エッチング面積を減少することで発光層面積を増加、発光光度を増加することを特徴とする。
3.大きい面積を持つ導電導熱層により、効率的な伝導散熱が可能、導電効果にも優れ、簡単な一般半田接合を採用する他、導電導熱層は光反射面とすることができ、その発光及び光反射の光度向上の効果を持つことを特徴とする。
また、別の効果についてであるが、光反射面積が増加、SMD(Surface Mounted Devices)とLED機能を持つがパッケージ不要である為、パッケージコストを削減できる。
2 P極
3 エッチング
4 発光層
5 チップ
6 N極
7 P極
8 ボンディングワイヤ
9 半田バンプ
10 チップ
20 P極
30 N極
40 導電材
50 導電材
60 PCB回路板
70 半田
Claims (2)
- PN電極のそれぞれと連結する大きな面積を持つ導電(導熱)層を増設、その構造により、発光層のエッチングされる面積を減少、光度を増強、大きな面積を有することにより高効率散熱し、光反射面効果を向上、パッケージ不要でSMD(Surface Mounted Devices)及びフリップチップLED機能を持つ為、パッケージコストを削減することを特徴とする高効率散熱及び光度のチップ。
- 請求項1記載の高効率散熱及び光度のチップにおいて、導電導熱層は金、銀、銅、アルミ、錫、合金とすることを特徴とする高効率散熱及び光度のチップ。
Applications Claiming Priority (1)
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TW093136992A TWI285968B (en) | 2004-12-01 | 2004-12-01 | Chip with high efficient heat dissipation and brightness |
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JP2006157025A true JP2006157025A (ja) | 2006-06-15 |
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JP2005346314A Pending JP2006157025A (ja) | 2004-12-01 | 2005-11-30 | 高効率散熱及び光度のチップ |
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US (1) | US20060113555A1 (ja) |
JP (1) | JP2006157025A (ja) |
TW (1) | TWI285968B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US9754926B2 (en) * | 2011-01-31 | 2017-09-05 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9660153B2 (en) | 2007-11-14 | 2017-05-23 | Cree, Inc. | Gap engineering for flip-chip mounted horizontal LEDs |
US9640737B2 (en) | 2011-01-31 | 2017-05-02 | Cree, Inc. | Horizontal light emitting diodes including phosphor particles |
US9831220B2 (en) | 2011-01-31 | 2017-11-28 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9673363B2 (en) | 2011-01-31 | 2017-06-06 | Cree, Inc. | Reflective mounting substrates for flip-chip mounted horizontal LEDs |
US8587001B2 (en) * | 2012-02-13 | 2013-11-19 | Unistar Opto Corporation | Light-emitting diode light module free of jumper wires |
WO2014187896A1 (en) * | 2013-05-23 | 2014-11-27 | Koninklijke Philips N.V. | Light-emitting device with alternating arrangement of anode pads and cathode pads |
CN105098025A (zh) * | 2014-05-07 | 2015-11-25 | 新世纪光电股份有限公司 | 发光装置 |
Citations (2)
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JP2000114595A (ja) * | 1998-10-07 | 2000-04-21 | Matsushita Electronics Industry Corp | GaN系化合物半導体発光素子 |
JP2005093970A (ja) * | 2003-09-16 | 2005-04-07 | Korai Kagi Kofun Yugenkoshi | 発光装置 |
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US6268618B1 (en) * | 1997-05-08 | 2001-07-31 | Showa Denko K.K. | Electrode for light-emitting semiconductor devices and method of producing the electrode |
WO2002031865A1 (en) * | 2000-10-13 | 2002-04-18 | Emcore Corporation | Method of making an electrode |
TW591811B (en) * | 2003-01-02 | 2004-06-11 | Epitech Technology Corp Ltd | Color mixing light emitting diode |
-
2004
- 2004-12-01 TW TW093136992A patent/TWI285968B/zh not_active IP Right Cessation
-
2005
- 2005-11-23 US US11/285,799 patent/US20060113555A1/en not_active Abandoned
- 2005-11-30 JP JP2005346314A patent/JP2006157025A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000114595A (ja) * | 1998-10-07 | 2000-04-21 | Matsushita Electronics Industry Corp | GaN系化合物半導体発光素子 |
JP2005093970A (ja) * | 2003-09-16 | 2005-04-07 | Korai Kagi Kofun Yugenkoshi | 発光装置 |
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US20060113555A1 (en) | 2006-06-01 |
TWI285968B (en) | 2007-08-21 |
TW200620692A (en) | 2006-06-16 |
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