JP2006128322A - Light emitting device and lighting device - Google Patents

Light emitting device and lighting device Download PDF

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JP2006128322A
JP2006128322A JP2004313018A JP2004313018A JP2006128322A JP 2006128322 A JP2006128322 A JP 2006128322A JP 2004313018 A JP2004313018 A JP 2004313018A JP 2004313018 A JP2004313018 A JP 2004313018A JP 2006128322 A JP2006128322 A JP 2006128322A
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light
light emitting
emitting element
emitting device
connection pad
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Mitsugi Uratani
貢 浦谷
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device and a lighting device which can maintain good luminescence characteristics along with high luminescence intensity. <P>SOLUTION: The light emitting device is provided with a base substrate 1 wherein an electric conductive path 4a is formed from a connection pad 4 to the bottom principal surface or the side surface while having the connection pad 4 in the upper principal surface, a reflection member 2 whose inner circumference side is made a light reflection surface 2a while being joined so that the connection pad 4 may be surrounded in the upper principal surface of the base substrate 1, a light emitting device 3 where the electrode at the bottom is connected to connection pad 4 via a conductive jointing material 7; a light transparency member 6 provided so that the upper surface and the side of the light emitting device 3 may be covered, and a wavelength converter member 5 provided so that conductive jointing material 7 and the light transparency member 6 may be covered. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、発光素子から発光される光を波長変換して外部に放射する発光装置および照明装置に関する。   The present invention relates to a light emitting device and an illumination device that radiate light emitted from a light emitting element after wavelength conversion.

従来の発光ダイオード（ＬＥＤ）等の発光素子13から発光される光を蛍光体で長波長変換して発光する発光装置を図７に示す。図７において、発光装置は、上側主面の中央部に発光素子13を搭載するための搭載部11ａを有し、搭載部11ａやその周辺から発光装置の内外を電気的に導通接続するリード端子やメタライズ配線等からなる導電路（図示せず）が形成された絶縁体からなる基体11と、基体11の上側主面に接着固定され、上側開口が下側開口より大きい貫通孔が形成されているとともに、内周面が発光素子13が発光する光を反射する光反射面12ａとされている枠状の反射部材12と、搭載部11ａに搭載固定された発光素子13と、反射部材12の内側に発光素子13を覆うように充填された透光性部材16と、発光素子13が発光する光を長波長側に波長変換する蛍光体を透明部材に含有して成る波長変換部材15とから主に構成されている。   FIG. 7 shows a light emitting device that emits light by converting light emitted from a light emitting element 13 such as a conventional light emitting diode (LED) into a long wavelength with a phosphor. In FIG. 7, the light emitting device has a mounting portion 11a for mounting the light emitting element 13 in the central portion of the upper main surface, and leads terminals that electrically connect the inside and outside of the light emitting device from the mounting portion 11a and its periphery. And a base 11 made of an insulator in which a conductive path (not shown) made of metallized wiring or the like is formed, and a through hole that is bonded and fixed to the upper main surface of the base 11 and whose upper opening is larger than the lower opening. And a frame-like reflecting member 12 whose inner peripheral surface is a light reflecting surface 12a for reflecting light emitted from the light emitting element 13, a light emitting element 13 mounted and fixed on the mounting portion 11a, and a reflecting member 12 A translucent member 16 filled so as to cover the light emitting element 13 inside, and a wavelength converting member 15 containing a phosphor that converts the light emitted from the light emitting element 13 to the long wavelength side in a transparent member. It is mainly composed.

基体11は、酸化アルミニウム質焼結体（アルミナセラミックス）や窒化アルミニウム質焼結体，ムライト質焼結体，ガラスセラミックス等のセラミックス、またはエポキシ樹脂等の樹脂から成る。基体11がセラミックスから成る場合、その上側主面に配線導体がタングステン（Ｗ），モリブデン（Ｍｏ）−マンガン（Ｍｎ）等から成る金属ペーストを高温で焼成して形成される。また、基体11が樹脂から成る場合、モールド成型された基体11の内部に銅（Ｃｕ）や鉄（Ｆｅ）−ニッケル（Ｎｉ）合金等から成るリード端子が設置固定される。   The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as epoxy resin. When the substrate 11 is made of ceramic, the wiring conductor is formed on the upper main surface thereof by firing a metal paste made of tungsten (W), molybdenum (Mo) -manganese (Mn), or the like at a high temperature. When the substrate 11 is made of resin, a lead terminal made of copper (Cu), iron (Fe) -nickel (Ni) alloy, or the like is installed and fixed inside the molded substrate 11.

また、反射部材12は、上側開口が下側開口より大きい貫通孔が形成されるとともに内周面に光を反射する光反射面12ａが設けられた枠状となっている。具体的には、アルミニウム（Ａｌ）やＦｅ−Ｎｉ−コバルト（Ｃｏ）合金等の金属、アルミナセラミックス等のセラミックスまたはエポキシ樹脂等の樹脂から成り、切削加工や金型成型または押し出し成型等の成形技術により形成される。   Further, the reflecting member 12 has a frame shape in which a through hole having an upper opening larger than the lower opening is formed and a light reflecting surface 12a for reflecting light is provided on the inner peripheral surface. Specifically, it consists of metals such as aluminum (Al) and Fe-Ni-cobalt (Co) alloys, ceramics such as alumina ceramics or resins such as epoxy resins, and molding technologies such as cutting, die molding or extrusion molding. It is formed by.

さらに、反射部材12の光反射面12ａは、貫通孔の内周面を平滑化することにより、あるいは、貫通孔の内周面にＡｌ等の金属を蒸着法やメッキ法により被着することにより形成される。そして、反射部材12は、半田，銀（Ａｇ）ロウ等のロウ材または樹脂接着材等の接合材により、搭載部11ａを反射部材12の内周面で取り囲むように基体11の上側主面に接合される。   Further, the light reflecting surface 12a of the reflecting member 12 is formed by smoothing the inner peripheral surface of the through hole or by depositing a metal such as Al on the inner peripheral surface of the through hole by vapor deposition or plating. It is formed. The reflecting member 12 is formed on the upper main surface of the base 11 so that the mounting portion 11a is surrounded by the inner peripheral surface of the reflecting member 12 by a soldering material such as solder, silver (Ag) brazing, or a bonding material such as a resin adhesive. Be joined.

そして、搭載部11ａの周辺に配置した配線導体と発光素子13とをボンディングワイヤや導電性接合材等の電気接続手段を介して電気的に接続し、しかる後、エポキシ樹脂やシリコーン樹脂等の透光性部材16をディスペンサー等の注入機で発光素子13を覆うように反射部材12の内側に充填しオーブンで熱硬化させ、さらに蛍光体をエポキシ樹脂やシリコーン樹脂等の透明部材に含有して成る波長変換部材15をディスペンサー等の注入機で透光性部材16を覆うように反射部材12の内側に充填しオーブンで熱硬化させることで、発光素子13からの光を蛍光体により長波長側に波長変換し所望の波長スペクトルを有する光を取り出せる発光装置となし得る（下記の特許文献１参照）。
特開2000-349346号公報 Then, the wiring conductor arranged around the mounting portion 11a and the light emitting element 13 are electrically connected through an electrical connection means such as a bonding wire or a conductive bonding material, and thereafter, a transparent material such as an epoxy resin or a silicone resin is used. Filling the inside of the reflective member 12 so that the light-emitting element 13 is covered with an injection machine such as a dispenser, and heat-curing in an oven, and further containing the phosphor in a transparent member such as epoxy resin or silicone resin. The wavelength conversion member 15 is filled inside the reflection member 12 so as to cover the translucent member 16 with an injection machine such as a dispenser and thermally cured in an oven, so that the light from the light emitting element 13 is made longer by the phosphor. A light emitting device capable of extracting light having a desired wavelength spectrum after wavelength conversion can be obtained (see Patent Document 1 below).
JP 2000-349346 A

近年、上記の発光装置を照明用として利用する動きが増加しており、発光素子13として近紫外光や青色光等の短波長の光を発光するものを用いるとともに、波長変換部材15に複数の蛍光体を含有させて、より発光強度の高い白色の光を放出する発光装置が要求されている。   In recent years, there has been an increase in the use of the above light-emitting device for illumination, and a light-emitting element 13 that emits short-wavelength light such as near-ultraviolet light or blue light is used. There is a demand for a light emitting device that contains a phosphor and emits white light with higher emission intensity.

しかしながら、上記従来の発光装置においては、発光素子13から発せられた近紫外光や青色光が、発光素子13と基体11に形成された導電路とを電気的に接続するために用いる金（Ａｕ）等から成るボンディングワイヤあるいはＡｕ−錫（Ｓｎ）合金等から成る導電性接合材によって吸収され光損失が生じるため、発光効率を向上できず、発光強度が小さいという問題点を有していた。   However, in the conventional light-emitting device, near ultraviolet light or blue light emitted from the light-emitting element 13 is used to electrically connect the light-emitting element 13 and the conductive path formed in the base 11 (Au ) Or the like, or a conductive bonding material made of Au—tin (Sn) alloy or the like, and light loss occurs, so that the light emission efficiency cannot be improved and the light emission intensity is low.

さらに、発光素子13から発せられた近紫外光や青色光が、基体11と反射部材12との接合を行なっている接合材を劣化させ、その劣化した部分で光が吸収されやすくなったり、発光装置が破損したりし、安定した放射強度および発光特性を維持できないという問題点を有していた。   Furthermore, near ultraviolet light or blue light emitted from the light emitting element 13 deteriorates the bonding material that bonds the base 11 and the reflecting member 12, and light is easily absorbed in the deteriorated portion, or light emission. The apparatus was damaged, and there was a problem that stable radiation intensity and light emission characteristics could not be maintained.

したがって、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、
発光強度が高いとともに良好な発光特性を維持することが可能な発光装置および照明装置を提供することである。 Therefore, the present invention has been completed in view of the above-described conventional problems, and its purpose is as follows.
It is an object of the present invention to provide a light emitting device and a lighting device that have high emission intensity and can maintain good light emission characteristics.

本発明の発光装置は、上側主面に接続パッドを有するとともに該接続パッドから下側主面または側面にかけて導電路が形成された基体と、該基体の上側主面に前記接続パッドを取り囲むように接合されるとともに内周面が光反射面とされている反射部材と、下面の電極が前記接続パッドに導電性接合材を介して接続された発光素子と、該発光素子の上面および側面を覆うように設けられた透光性部材と、前記導電性接合材および前記透光性部材を覆うように設けられた波長変換部材とを具備していることを特徴とする。   The light emitting device of the present invention has a base having a connection pad on the upper main surface and a conductive path formed from the connection pad to the lower main surface or the side surface, and surrounding the connection pad on the upper main surface of the base. A reflecting member that is bonded and has an inner peripheral surface as a light reflecting surface, a light emitting element in which an electrode on a lower surface is connected to the connection pad via a conductive bonding material, and covers an upper surface and side surfaces of the light emitting element And a wavelength conversion member provided so as to cover the conductive bonding material and the translucent member.

本発明の発光装置において、好ましくは、前記波長変換部材は前記反射部材と前記基体との接合部を覆っていることを特徴とする。   In the light emitting device of the present invention, preferably, the wavelength conversion member covers a joint portion between the reflection member and the base.

本発明の発光装置において、好ましくは、前記基体の上側主面に凸部が形成されており、該凸部の上面に前記接続パッドが形成されていることを特徴とする。   In the light emitting device of the present invention, preferably, a convex portion is formed on the upper main surface of the base body, and the connection pad is formed on an upper surface of the convex portion.

本発明の照明装置は、上記本発明の発光装置を光源として用いたことを特徴とする。   The illuminating device of the present invention is characterized by using the light emitting device of the present invention as a light source.

本発明の発光装置は、上側主面に接続パッドを有するとともに接続パッドから下側主面または側面にかけて導電路が形成された基体と、基体の上側主面に接続パッドを取り囲むように接合されるとともに内周面が光反射面とされている反射部材と、下面の電極が接続パッドに導電性接合材を介して接続された発光素子と、発光素子の上面および側面を覆うように設けられた透光性部材と、導電性接合材および透光性部材を覆うように設けられた波長変換部材とを具備していることから、発光素子から発光された光が導電性接合材に進行したとしても、導電性接合材は波長変換部材によって可視光に波長変換されるため、導電性接合材に吸収されにくくなり、光損失が生じるのを有効に防止できる。よって、発光効率を高め、放射強度の高い発光装置とすることができる。   The light-emitting device of the present invention has a connection pad on the upper main surface and a conductive path formed from the connection pad to the lower main surface or the side surface, and is joined to the upper main surface of the substrate so as to surround the connection pad. In addition, a reflection member whose inner peripheral surface is a light reflection surface, a light emitting element in which an electrode on the lower surface is connected to a connection pad via a conductive bonding material, and an upper surface and a side surface of the light emitting element are provided. Since the translucent member and the wavelength conversion member provided so as to cover the electroconductive bonding material and the translucent member are provided, the light emitted from the light emitting element has traveled to the electroconductive bonding material. However, since the wavelength of the conductive bonding material is converted to visible light by the wavelength conversion member, the conductive bonding material is less likely to be absorbed by the conductive bonding material, and light loss can be effectively prevented. Therefore, the light emission efficiency can be increased and a light emitting device with high radiation intensity can be obtained.

また、発光素子のほとんどの光が放出される上面および側面を覆うように透光性部材が設けられ、この透光性部材を覆うように波長変換部材が設けられるので、角を有する発光素子に対して透光性部材で表面を曲面状とすることができ、この曲面状の表面に波長変換部材を均一かつ容易に一定厚みで設けることができ、発光素子から発光された光が波長変換部材を透過する行路長をきわめて均一にすることができ、色むらや強度むらが生じるのを有効に防止して発光特性を良好にすることができる。   In addition, a translucent member is provided so as to cover an upper surface and a side surface from which most light of the light emitting element is emitted, and a wavelength conversion member is provided so as to cover the translucent member. On the other hand, the surface can be curved with a translucent member, and the wavelength converting member can be uniformly and easily provided with a constant thickness on the curved surface, and the light emitted from the light emitting element is converted into the wavelength converting member. The path length through which the light passes through can be made extremely uniform, and the occurrence of uneven color and uneven intensity can be effectively prevented and the light emission characteristics can be improved.

本発明の発光装置は、波長変換部材が反射部材と基体との接合部を覆っていることから、発光素子からの光が反射部材と基体との接合部に進行しても波長変換部材で可視光に波長変換することにより、反射部材と基体との接合部が劣化するのを有効に防止でき、安定した放射強度および発光特性を維持することができる。   In the light emitting device of the present invention, since the wavelength conversion member covers the junction between the reflection member and the substrate, the wavelength conversion member is visible even if light from the light emitting element travels to the junction between the reflection member and the substrate. By converting the wavelength into light, it is possible to effectively prevent deterioration of the joint between the reflecting member and the substrate, and it is possible to maintain stable radiation intensity and light emission characteristics.

本発明の発光装置は、基体の上側主面に凸部が形成されており、凸部の上面に接続パッドが形成されていることから、発光素子を反射部材と基体との接合部よりも高い位置に設けることができ、発光素子からの光が斜め下方向に進行しても、反射部材と基体との接合部で光が吸収されることなく反射部材の光反射面で良好に反射させることができ、発光効率を向上できる。   In the light emitting device of the present invention, the convex portion is formed on the upper main surface of the base, and the connection pad is formed on the top surface of the convex portion, so that the light emitting element is higher than the joint between the reflecting member and the base. Even if the light from the light emitting element travels diagonally downward, the light reflecting surface of the reflecting member can be reflected well without being absorbed by the junction between the reflecting member and the substrate. And the luminous efficiency can be improved.

本発明の照明装置は、上記本発明の発光装置を光源として用いたことから、半導体から成る発光素子の電子の再結合による発光を利用していることと併せて、従来の放電を用いた照明装置よりも低消費電力かつ長寿命とすることが可能な小型の照明装置とすることができる。その結果、発光素子から発生する光の中心波長の変動を抑制することができ、長期間にわたり安定した放射光強度かつ放射光角度（配光分布）で光を照射することができるとともに、照射面における色むらや照度分布の偏りが抑制された照明装置とすることができる。   Since the illumination device of the present invention uses the light-emitting device of the present invention as a light source, it uses the light emission by recombination of electrons of a light-emitting element made of a semiconductor, and illumination using a conventional discharge. It can be a small lighting device that can have lower power consumption and longer life than the device. As a result, fluctuations in the center wavelength of light generated from the light emitting element can be suppressed, light can be emitted with a stable radiant light intensity and radiant light angle (light distribution distribution) over a long period of time, and an irradiation surface It is possible to provide a lighting device in which uneven color and uneven illuminance distribution are suppressed.

また、本発明の発光装置を光源として所定の配置に設置するとともに、これらの発光装置の周囲に任意の形状に光学設計した反射治具や光学レンズ、光拡散板等を設置することにより、任意の配光分布の光を放射する照明装置とすることができる。   In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which radiates | emits the light of this light distribution.

本発明の発光装置について以下に詳細に説明する。図１は本発明の発光装置の実施の形態の一例を示す断面図である。この図において、１は基体、２は反射部材、３は発光素子、４は接続パッド、４ａは導電路、５は波長変換部材、６は透光性部材、７は導電性接合材であり、主としてこれらで発光素子３から発せられる光を方向性をもって外部に放射させ得る発光装置が構成される。   The light emitting device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a light emitting device of the present invention. In this figure, 1 is a substrate, 2 is a reflection member, 3 is a light emitting element, 4 is a connection pad, 4a is a conductive path, 5 is a wavelength conversion member, 6 is a translucent member, and 7 is a conductive bonding material. A light-emitting device that can radiate light emitted from the light-emitting element 3 to the outside mainly with directivity is configured.

本発明の発光装置は、上側主面に接続パッド４を有するとともに接続パッド４から下側主面または側面にかけて導電路４ａが形成された基体１と、基体１の上側主面に接続パッド４を取り囲むように接合されるとともに内周面が光反射面２ａとされている反射部材２と、下面の電極が接続パッド４に導電性接合材７を介して接続された発光素子３と、発光素子３の上面および側面を覆うように設けられた透光性部材６と、導電性接合材７および透光性部材６を覆うように設けられた波長変換部材５とを具備している。   The light-emitting device of the present invention has a base body 1 having a connection pad 4 on the upper main surface and a conductive path 4a formed from the connection pad 4 to the lower main surface or side surface, and the connection pad 4 on the upper main surface of the base body 1. A light-emitting element 3 having a light-reflecting surface 2a that is joined so as to surround it, a light-emitting element 3 in which an electrode on the lower surface is connected to a connection pad 4 via a conductive bonding material 7, and a light-emitting element 3 and a wavelength conversion member 5 provided so as to cover the conductive bonding material 7 and the light-transmitting member 6.

本発明における基体１は、アルミナセラミックスや窒化アルミニウム質焼結体，ムライト質焼結体，ガラスセラミックス等のセラミックス、または、エポキシ樹脂等の樹脂から成る。   The substrate 1 in the present invention is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin.

基体１は図２に示すように、上側主面から突出した発光素子３を搭載するための凸部１ａを有していてもよい。   As shown in FIG. 2, the substrate 1 may have a convex portion 1a for mounting the light emitting element 3 protruding from the upper main surface.

このような凸部１ａは、基体１の凸部１ａの周囲を切削加工や機械研磨、ブラスト研磨等の手段で除去することによって、あるいは、金型成型やセラミックグリーンシートの積層法によって基体１と一体に形成することができる。または、基体１の上側主面に凸部１ａとなる部材を接着剤等で接合してもよい。   Such a convex portion 1a is formed by removing the periphery of the convex portion 1a of the base body 1 by means of cutting, mechanical polishing, blast polishing, or the like, or by molding or a ceramic green sheet lamination method. It can be formed integrally. Or you may join the member used as the convex part 1a to the upper side main surface of the base | substrate 1 with an adhesive agent.

このように基体１の上側主面から突出した凸部１ａに発光素子３が搭載されることによって、突出した凸部１ａにより発光素子３から斜め下方向に発光される光を反射部材２の反射面２ａに良好に照射させ、反射部材２以外の部位で光が吸収されるのを防止し、発光素子３から発光される光の多くを高い反射率で反射させることができる。また、凸部１ａにより、発光素子３を基体１の所望の位置に正確かつ容易に搭載することができる。その結果、発光素子３の発光特性を最大限に引き出すことができ、軸上光度や輝度，演色性等の光特性に優れた発光装置とすることができる。   As described above, the light emitting element 3 is mounted on the convex portion 1 a protruding from the upper main surface of the base 1, so that the light emitted obliquely downward from the light emitting element 3 by the protruding convex portion 1 a is reflected by the reflecting member 2. It is possible to irradiate the surface 2a satisfactorily, prevent the light from being absorbed by a portion other than the reflecting member 2, and reflect most of the light emitted from the light emitting element 3 with a high reflectance. Further, the light emitting element 3 can be accurately and easily mounted at a desired position of the base body 1 by the convex portion 1a. As a result, the light emission characteristics of the light emitting element 3 can be maximized, and a light emitting device having excellent light characteristics such as on-axis luminous intensity, luminance, and color rendering can be obtained.

基体１の上側主面には発光素子３の電極がＡｕ−Ｓｎ合金等のろう材や半田、導電性樹脂等の導電性接合材７を介して電気的に接続される接続パッド４が形成されている。この接続パッド４が基体１内部に形成された、配線導体やビア導体等から成る導電路４ａを介して発光装置の外表面（基体１の側面や下面）に導出されて外部電気回路基板に接続されることにより、発光素子３と外部電気回路とが電気的に接続されることとなる。なお、接続パッド４は基体１の上側主面に露出した導電路４ａの一部から成るものでもよく、例えば、基体１の内部に上端面を基体１の上側主面に露出させるように形成されたビア導体の上端面を接続パッド４として用いてもよい。   A connection pad 4 is formed on the upper main surface of the substrate 1 so that the electrodes of the light emitting element 3 are electrically connected via a brazing material such as an Au—Sn alloy, or a conductive bonding material 7 such as solder or conductive resin. ing. This connection pad 4 is led out to the outer surface of the light-emitting device (the side surface and the lower surface of the substrate 1) via a conductive path 4a formed in the substrate 1 and made of a wiring conductor, a via conductor, etc., and connected to an external electric circuit board. As a result, the light emitting element 3 and the external electric circuit are electrically connected. The connection pad 4 may be formed of a part of the conductive path 4a exposed on the upper main surface of the base body 1. For example, the connection pad 4 is formed inside the base body 1 so that the upper end surface is exposed on the upper main surface of the base body 1. Alternatively, the upper end surface of the via conductor may be used as the connection pad 4.

発光素子３を接続パッド４に接続する方法としては、発光素子３の下面で半田バンプ等の導電性接合材７により接続するフリップチップボンディング方式を用いた方法が用いられる。これにより、接続パッド４を発光素子３の直下に設けることができるため、発光素子３の周辺の基体１の上面に接続パッド４を設けるためのスペースを設ける必要がなくなる。よって、発光素子３から発光された光がこの基体１の接続パッド４用のスペースで吸収されて軸上光度が低下するのを有効に抑制することができる。   As a method for connecting the light emitting element 3 to the connection pad 4, a method using a flip chip bonding method in which the lower surface of the light emitting element 3 is connected by a conductive bonding material 7 such as a solder bump is used. Thereby, since the connection pad 4 can be provided directly under the light emitting element 3, it is not necessary to provide a space for providing the connection pad 4 on the upper surface of the base 1 around the light emitting element 3. Therefore, it is possible to effectively suppress the light emitted from the light emitting element 3 from being absorbed in the space for the connection pad 4 of the base 1 and the on-axis luminous intensity being lowered.

この接続パッド４は、例えば、Ｗ，Ｍｏ，Ｃｕ，Ａｇ等の金属粉末のメタライズ層を基体１の表面や内部に形成することによって、Ｆｅ−Ｎｉ−Ｃｏ合金等のリード端子を基体１に埋設することによって、または、導電路４ａが形成された絶縁体から成る入出力端子を基体１に設けた貫通孔に嵌着接合させることによって設けられる。   The connection pad 4 is formed by, for example, forming a metallized layer of a metal powder such as W, Mo, Cu, or Ag on the surface or inside of the base 1 to embed a lead terminal such as an Fe—Ni—Co alloy in the base 1. Or an input / output terminal made of an insulator in which the conductive path 4a is formed is fitted and joined to a through hole provided in the base 1.

なお、接続パッド４や導電路４ａの露出する表面には、ＮｉやＡｕ等の耐食性に優れる金属を１〜20μｍ程度の厚さで被着させておくのが良く、接続パッド４や導電路４ａの酸化腐食を有効に防止し得るともに、発光素子３と接続パッド４との接続を強固にし得る。したがって、接続パッド４や導電路４ａの露出表面には、例えば、厚さ１〜10μｍ程度のＮｉメッキ層と厚さ0.1〜３μｍ程度のＡｕメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのがより好ましい。   It should be noted that a metal having excellent corrosion resistance such as Ni or Au is preferably deposited on the exposed surface of the connection pad 4 or the conductive path 4a with a thickness of about 1 to 20 μm. As a result, the oxidative corrosion of the light emitting element 3 and the connection pad 4 can be strengthened. Therefore, on the exposed surfaces of the connection pads 4 and the conductive paths 4a, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially formed by an electrolytic plating method or an electroless plating method. More preferably it is deposited.

また、基体１の上面には、反射部材２が半田，Ａｇロウ等のロウ材やエポキシ樹脂等の接着剤等の接合材により取着される。反射部材２は、中央部に貫通孔が形成されているとともに内周面が発光素子３が発光する光を反射する光反射面２ａとされている。   Further, the reflecting member 2 is attached to the upper surface of the substrate 1 by a bonding material such as solder, a brazing material such as Ag brazing, or an adhesive such as an epoxy resin. The reflection member 2 has a through-hole formed in the center portion, and an inner peripheral surface is a light reflection surface 2 a that reflects light emitted from the light emitting element 3.

反射部材２は、金属やセラミックス、樹脂等から成り、切削加工や金型成形等を行うことにより形成される。さらに、反射部材２の光反射面２ａは、貫通孔の内周面を研磨したり、金型を押し付ける等によって平滑化することにより、あるいは、貫通孔の内周面に、例えば、メッキや蒸着等によりＡｌ，Ａｇ，Ａｕ，白金（Ｐｔ），チタン（Ｔｉ），クロム（Ｃｒ），Ｃｕ等の高反射率の金属薄膜を形成することにより光反射面２ａを形成してもよい。なお、光反射面２ａがＡｇやＣｕ等の酸化により変色し易い金属からなる場合には、その表面に、例えば厚さ１〜10μｍ程度のＮｉメッキ層と厚さ0.1〜３μｍ程度のＡｕメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのが良い。これにより光反射面２ａの耐腐食性が向上する。   The reflecting member 2 is made of metal, ceramics, resin, or the like, and is formed by performing cutting processing, mold forming, or the like. Further, the light reflecting surface 2a of the reflecting member 2 is smoothed by polishing the inner peripheral surface of the through hole, pressing a mold, or the like, or on the inner peripheral surface of the through hole, for example, by plating or vapor deposition. The light reflecting surface 2a may be formed by forming a highly reflective metal thin film such as Al, Ag, Au, platinum (Pt), titanium (Ti), chromium (Cr), Cu or the like. When the light reflecting surface 2a is made of a metal that is easily discolored by oxidation such as Ag or Cu, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are formed on the surface. Are preferably deposited sequentially by electrolytic plating or electroless plating. Thereby, the corrosion resistance of the light reflecting surface 2a is improved.

また、光反射面２ａ表面の算術平均粗さＲａは0.004〜４μｍであるのが良く、これにより、光反射面２ａが発光素子３や波長変換部材５から放射された光を良好に反射し得る。Ｒａが４μｍを超えると、発光素子５の光を均一に反射させるのが困難となり、発光装置の内部で乱反射し易くなる。一方、0.004μｍ未満では、そのような面を安定かつ効率良く形成することが困難となる傾向にある。   The arithmetic mean roughness Ra of the surface of the light reflecting surface 2a is preferably 0.004 to 4 μm, whereby the light reflecting surface 2a can favorably reflect the light emitted from the light emitting element 3 or the wavelength converting member 5. . When Ra exceeds 4 μm, it becomes difficult to uniformly reflect the light of the light emitting element 5 and it becomes easy to diffusely reflect inside the light emitting device. On the other hand, if it is less than 0.004 μm, it tends to be difficult to form such a surface stably and efficiently.

光反射面２ａは、例えば、縦断面形状が、上側に向かうにともなって外側に広がった図１に示すような直線状の傾斜面、上側に向かうにともなって外側に広がった曲面状の傾斜面、あるいは矩形状の面等の形状が挙げられる。   The light reflecting surface 2a is, for example, a linear inclined surface as shown in FIG. 1 whose longitudinal cross-sectional shape spreads outward as it goes upward, or a curved inclined surface that spreads outward as it goes upward Or a shape such as a rectangular surface.

反射部材２は、基体１の上側主面の接続パッド４以外のいかなる部位に取着されてもよいが、発光素子３の周囲に所望の面精度、例えば、発光装置の縦断面において、発光素子３を間に挟んで発光素子３の両側に設けられた光反射面２ａが対称になっている状態で光反射面２ａが設けられるように取着されるのがよい。これにより、発光素子３からの光を波長変換部材５で波長変換して外部へ直接放射させるだけでなく、発光素子３から横方向等に発光された光や波長変換部材５から下側に放出された光を光反射面２ａで均一にむらなく反射させることができ、軸上光度および輝度さらには演色性等を効果的に向上させることができる。   The reflecting member 2 may be attached to any part other than the connection pad 4 on the upper main surface of the base 1, but the light emitting element 3 has a desired surface accuracy around the light emitting element 3, for example, in the longitudinal section of the light emitting device. It is preferable that the light reflecting surfaces 2a are attached so that the light reflecting surfaces 2a provided on both sides of the light emitting element 3 are symmetric with 3 interposed therebetween. As a result, not only the light from the light emitting element 3 is wavelength-converted by the wavelength conversion member 5 but directly emitted to the outside, but also the light emitted from the light emitting element 3 in the lateral direction or the like is emitted downward from the wavelength conversion member 5. The reflected light can be reflected uniformly and uniformly on the light reflecting surface 2a, and the on-axis luminous intensity, luminance, and color rendering can be effectively improved.

特に、反射部材２が接続パッド４に近接しているほど上記の効果が顕著に現れる。これにより、接続パッド４の周囲を反射部材２で取り囲むことによって、より多くの光を反射させることができ、より高い軸上光度を得ることが可能となる。   In particular, the closer the reflection member 2 is to the connection pad 4, the more the above effect appears. Thus, by surrounding the connection pad 4 with the reflecting member 2, more light can be reflected and higher on-axis luminous intensity can be obtained.

透光性部材６は、エポキシ樹脂やシリコーン樹脂等の透明樹脂から成る透明部材から成る。波長変換部材５は、エポキシ樹脂やシリコーン樹脂等の透明樹脂から成る透明部材に発光素子３が発光する光を波長変換する蛍光体を含有させたものである。   The translucent member 6 is made of a transparent member made of a transparent resin such as an epoxy resin or a silicone resin. The wavelength conversion member 5 is a transparent member made of a transparent resin such as an epoxy resin or a silicone resin and contains a phosphor that converts the wavelength of light emitted from the light emitting element 3.

透光性部材６は、ディスペンサー等の注入機で発光素子３の上面と側面とを覆うように被着され、好ましくは表面張力により表面が曲面状となるように透光性部材６の粘度を調製しておくのがよく、その後、オーブン等で熱硬化されることによって透光性部材６が設けられる。または、あらかじめ金型等の型に流し込みオーブン等で熱硬化することによって得たキャップ状の透光性部材６を発光素子３の上面と側面とを覆うように設置してもよい。   The translucent member 6 is attached so as to cover the upper surface and the side surface of the light-emitting element 3 with an injection machine such as a dispenser, and preferably the viscosity of the translucent member 6 is adjusted so that the surface is curved by surface tension. It is preferable to prepare it, and then the translucent member 6 is provided by thermosetting in an oven or the like. Alternatively, a cap-like translucent member 6 obtained by pouring into a mold such as a mold in advance and thermosetting with an oven or the like may be installed so as to cover the upper surface and the side surface of the light emitting element 3.

また、波長変換部材５は、ディスペンサー等の注入機で導電性接合材７および透光性部材６を覆うように注入され、オーブン等で熱硬化されることで、発光素子３からの光を蛍光体により波長変換し所望の波長スペクトルを有する光を取り出すことができる。   The wavelength conversion member 5 is injected so as to cover the conductive bonding material 7 and the translucent member 6 with an injection machine such as a dispenser, and is thermally cured in an oven or the like, so that the light from the light emitting element 3 is fluorescent. It is possible to extract light having a desired wavelength spectrum by converting the wavelength by the body.

なお、図１のような構成の場合、発光素子３を実装した後、波長変換部材５を導電性接合材７を覆うように発光素子３の下面まで設け、次に透光性部材６を発光素子３の側面および上面を覆うように設け、さらにその透光性部材６の表面を覆うように再度、波長変換部材５を設けることにより形成される。   In the case of the configuration shown in FIG. 1, after mounting the light emitting element 3, the wavelength conversion member 5 is provided up to the lower surface of the light emitting element 3 so as to cover the conductive bonding material 7, and then the translucent member 6 emits light. It is formed by providing the wavelength converting member 5 again so as to cover the side surface and the upper surface of the element 3 and further covering the surface of the translucent member 6.

また、図２のような構成の場合、先ず樹脂フィルムなどの支持部材上に発光素子３を貼り付けた状態で透光性部材６をスピンコータ法や、スプレー法等で塗布することで発光素子３の上面および側面に透光性部材６を被着させ、その後、透光性部材６を熱硬化して透光性部材６が予め発光素子３に被着された状態としておく。そして、この透光性部材６が被着された発光素子３を基体１に実装した後、波長変換部材５を透光性部材６の上から注入して透光性部材６および導電性接合材７をともに覆うように設け、これを加熱硬化させることにより形成できる。これにより、上面および側面に透光性部材６が形成された発光素子３を容易かつ再現性良く得ることができる。   In the case of the configuration shown in FIG. 2, first, the light-emitting element 3 is applied by applying the translucent member 6 by a spin coater method, a spray method, or the like in a state where the light-emitting element 3 is attached to a support member such as a resin film. The translucent member 6 is attached to the upper surface and the side surface of the substrate, and then the translucent member 6 is thermally cured so that the translucent member 6 is preliminarily attached to the light emitting element 3. And after mounting the light emitting element 3 to which this translucent member 6 was attached to the base | substrate 1, the wavelength conversion member 5 was inject | poured from on the translucent member 6, and the translucent member 6 and an electroconductive joining material 7 can be provided so as to cover them together, and can be formed by heating and curing. Thereby, the light emitting element 3 in which the translucent member 6 was formed in the upper surface and the side surface can be obtained easily and with good reproducibility.

さらに好ましくは、波長変換部材５は１回で塗布するのではなく、複数回に分けて塗布するのがよい。この２回目以降で塗布する波長変換部材５に含まれる蛍光体の量は１回目に塗布する波長変換部材５に含まれる蛍光体の量よりも少なくするのがよい。   More preferably, the wavelength conversion member 5 is not applied once, but is applied in a plurality of times. The amount of the phosphor contained in the wavelength conversion member 5 applied after the second time is preferably smaller than the amount of the phosphor contained in the wavelength conversion member 5 applied the first time.

これにより、発光素子３から発光する光の波長スペクトルを微調整することができる。その結果、軸上光度や輝度，演色性等の光特性を所望のものとし非常に優れたものとすることができる。   Thereby, the wavelength spectrum of the light emitted from the light emitting element 3 can be finely adjusted. As a result, it is possible to obtain desired optical characteristics such as on-axis luminous intensity, luminance, and color rendering properties, and to make them extremely excellent.

この２回目以降で塗布する波長変換部材５は、１回目に塗布する波長変換部材５をディスペンサー等の注入機を用いて塗布し、そして、オーブン等で熱硬化させた後、発光素子３を発光させ波長スペクトルを確認した後に形成するのがよい。この作業を必要に応じて繰り返すことで、軸上光度や輝度，演色性等の光特性を所望のものとし非常に優れたものとすることができる。   The wavelength converting member 5 to be applied after the second time is applied using the injection device such as a dispenser, and the light emitting element 3 emits light after being thermally cured in an oven or the like. It is preferable to form after confirming the wavelength spectrum. By repeating this operation as necessary, the light characteristics such as the on-axis luminous intensity, luminance, and color rendering can be made desirable and very excellent.

このように透光性部材６と波長変換部材５とを設けることにより、安定した形状で設けられた透光性部材６を覆うように波長変換部材５を設けられるようになり、蛍光体を含有する波長変換部材５を安定な形状でしかも一定の厚みで設けることができる。   By providing the translucent member 6 and the wavelength conversion member 5 in this way, the wavelength conversion member 5 can be provided so as to cover the translucent member 6 provided in a stable shape, and contains a phosphor. The wavelength conversion member 5 to be formed can be provided with a stable shape and a constant thickness.

その結果、発光素子３から発光される光が蛍光体を含有する波長変換部材５を透過する行路長を一定にして、波長変換効率を一定にでき、放射強度や軸上光度、輝度、演色性等の光特性のばらつきが少なく、光特性を良好なものとし、量産性に優れたものとし得る。よって、軸上光度や輝度，演色性等の光特性を所望のものとし非常に優れた光特性を有するものとすることができる。   As a result, the path length through which the light emitted from the light emitting element 3 passes through the wavelength conversion member 5 containing the phosphor can be made constant, the wavelength conversion efficiency can be made constant, the radiation intensity, the on-axis luminous intensity, the luminance, the color rendering properties. Therefore, the optical characteristics can be improved, and the optical characteristics can be improved and the mass productivity can be improved. Therefore, it is possible to obtain desired optical characteristics such as on-axis luminous intensity, luminance, and color rendering, and to have very excellent optical characteristics.

また、本発明の発光装置は、１個のものを光源として所定の配置となるように設置したことにより、または複数個を光源として、例えば、格子状や千鳥状，放射状，複数の発光装置から成る、円状や多角形状の発光装置群を同心状に複数群形成したもの等の所定の配置となるように設置したことにより、照明装置とすることができる。これにより、半導体から成る発光素子５の電子の再結合による発光を利用しているため、従来の放電を用いた照明装置よりも低消費電力かつ長寿命とすることが可能であり、発熱の小さな小型の照明装置とすることができる。その結果、発光素子５から発生する光の中心波長の変動を抑制することができ、長期間にわたり安定した放射光強度かつ放射光角度（配光分布）で光を照射することができるとともに、照射面における色むらや照度分布の偏りが抑制された照明装置とすることができる。   In addition, the light emitting device of the present invention may be arranged in a predetermined arrangement with one light source as a light source, or a plurality of light sources, for example, from a lattice shape, a staggered shape, a radial shape, or a plurality of light emitting devices. By installing the light emitting device groups having a circular shape or a polygonal shape so as to have a predetermined arrangement such as a plurality of concentrically formed light emitting device groups, a lighting device can be obtained. Thereby, since light emission by recombination of electrons of the light emitting element 5 made of a semiconductor is used, it is possible to achieve lower power consumption and longer life than a lighting device using a conventional discharge, and generate less heat. It can be set as a small illuminating device. As a result, fluctuations in the center wavelength of the light generated from the light emitting element 5 can be suppressed, and light can be irradiated with a stable radiant light intensity and radiant light angle (light distribution) over a long period of time. It can be set as the illuminating device by which the color nonuniformity in the surface and the bias of illuminance distribution were suppressed.

また、本発明の発光装置を光源として所定の配置に設置するとともに、これらの発光装置の周囲に任意の形状に光学設計した反射治具や光学レンズ、光拡散板等を設置することにより、任意の配光分布の光を放射できる照明装置とすることができる。   In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which can radiate | emit the light of this light distribution.

例えば、図３，図４に示す平面図，断面図のように複数個の発光装置101が発光装置駆動回路基板102に複数列に配置され、発光装置101の周囲に任意の形状に光学設計した反射治具103が設置されて成る照明装置の場合、隣接する一列上に配置された複数個の発光装置101において、隣り合う発光装置101との間隔が最短に成らないような配置、いわゆる千鳥状とすることが好ましい。即ち、発光装置101が格子状に配置される際には、光源となる発光装置101が直線上に配列されることによりグレアが強くなり、このような照明装置が人の視覚に入ってくることにより、不快感や目の障害を起こしやすくなるのに対し、千鳥状とすることにより、グレアが抑制され人間の目に対する不快感や目に及ぼす障害を低減することができる。さらに、隣り合う発光装置101間の距離が長くなることにより、隣接する発光装置101間の熱的な干渉が有効に抑制され、発光装置101が実装された発光装置駆動回路基板102内における熱のこもりが抑制され、発光装置101の外部に効率よく熱が放散される。その結果、人の目に対しても障害の小さい長期間にわたり光学特性の安定した長寿命の照明装置を作製することができる。   For example, a plurality of light emitting devices 101 are arranged in a plurality of rows on the light emitting device driving circuit board 102 as shown in the plan view and the cross-sectional view shown in FIGS. 3 and 4, and are optically designed in an arbitrary shape around the light emitting device 101. In the case of an illuminating device in which the reflecting jig 103 is installed, in a plurality of light emitting devices 101 arranged on adjacent rows, an arrangement in which the interval between the adjacent light emitting devices 101 is not the shortest, a so-called staggered pattern It is preferable that That is, when the light emitting devices 101 are arranged in a grid, the glare is strengthened by arranging the light emitting devices 101 as light sources on a straight line, and such a lighting device enters human vision. Thus, discomfort and eye damage are likely to occur, but by forming a staggered pattern, glare is suppressed and discomfort and damage to the eyes of the human eye can be reduced. Furthermore, since the distance between adjacent light emitting devices 101 is increased, thermal interference between adjacent light emitting devices 101 is effectively suppressed, and heat in the light emitting device driving circuit board 102 on which the light emitting devices 101 are mounted is reduced. Clouding is suppressed, and heat is efficiently dissipated to the outside of the light emitting device 101. As a result, it is possible to manufacture a long-life lighting device with stable optical characteristics over a long period of time with little obstacles to human eyes.

また、照明装置が、図５，図６に示す平面図，断面図のような発光装置駆動回路基板102上に複数の発光装置101から成る円状や多角形状の発光装置101群を、同心状に複数群形成した照明装置の場合、１つの円状や多角形状の発光装置101群における発光装置101の配置数を照明装置の中央側より外周側ほど多くすることが好ましい。これにより、発光装置101同士の間隔を適度に保ちながら発光装置101をより多く配置することができ、照明装置の照度をより向上させることができる。また、照明装置の中央部の発光装置101の密度を低くして発光装置駆動回路基板102の中央部における熱のこもりを抑制することができる。よって、発光装置駆動回路基板102内における温度分布が一様となり、照明装置を設置した外部電気回路基板やヒートシンクに効率よく熱が伝達され、発光装置101の温度上昇を抑制することができる。その結果、発光装置101は長期間にわたり安定して動作することができるとともに長寿命の照明装置を作製することができる。   Further, the lighting device is a concentric arrangement of a circular or polygonal light emitting device 101 group composed of a plurality of light emitting devices 101 on the light emitting device drive circuit board 102 as shown in the plan view and the cross-sectional view shown in FIGS. In the case of the illuminating device formed in a plurality of groups, it is preferable that the number of the light emitting devices 101 in one circular or polygonal light emitting device 101 group is increased from the central side of the illuminating device to the outer peripheral side. Thereby, it is possible to arrange more light emitting devices 101 while maintaining an appropriate interval between the light emitting devices 101, and it is possible to further improve the illuminance of the lighting device. In addition, the density of the light emitting device 101 in the central portion of the lighting device can be reduced to suppress heat accumulation in the central portion of the light emitting device driving circuit board 102. Therefore, the temperature distribution in the light emitting device driving circuit board 102 becomes uniform, heat is efficiently transmitted to the external electric circuit board and the heat sink on which the lighting device is installed, and the temperature rise of the light emitting device 101 can be suppressed. As a result, the light-emitting device 101 can operate stably over a long period of time, and a long-life lighting device can be manufactured.

このような照明装置としては、例えば、室内や室外で用いられる、一般照明用器具、シャンデリア用照明器具、住宅用照明器具、オフィス用照明器具、店装，展示用照明器具、街路用照明器具、誘導灯器具及び信号装置、舞台及びスタジオ用の照明器具、広告灯、照明用ポール、水中照明用ライト、ストロボ用ライト、スポットライト、電柱等に埋め込む防犯用照明、非常用照明器具、懐中電灯、電光掲示板等や、調光器、自動点滅器、ディスプレイ等のバックライト、動画装置、装飾品、照光式スイッチ、光センサ、医療用ライト、車載ライト等が挙げられる。   Examples of such lighting devices include general lighting fixtures, chandelier lighting fixtures, residential lighting fixtures, office lighting fixtures, store lighting, display lighting fixtures, street lighting fixtures, used indoors and outdoors. Guide light fixtures and signaling devices, stage and studio lighting fixtures, advertising lights, lighting poles, underwater lighting lights, strobe lights, spotlights, security lights embedded in power poles, emergency lighting fixtures, flashlights, Examples include electronic bulletin boards and the like, backlights for dimmers, automatic flashers, displays and the like, moving image devices, ornaments, illuminated switches, optical sensors, medical lights, in-vehicle lights, and the like.

なお、本発明は以上の実施の形態の例に限定されず、本発明の要旨を逸脱しない範囲内であれば種々の変更を行なうことは何等支障ない。   In addition, this invention is not limited to the example of the above embodiment, If it is in the range which does not deviate from the summary of this invention, it will not interfere at all.

例えば、放射強度の向上のために基体１に発光素子３を複数設けてしても良い。また反射面２ａの角度を任意に調整することも可能であり、これにより、補色域を設けることによりさらに良好な演色性を得ることができる。   For example, a plurality of light emitting elements 3 may be provided on the base 1 in order to improve the radiation intensity. It is also possible to arbitrarily adjust the angle of the reflecting surface 2a. Thereby, a better color rendering property can be obtained by providing a complementary color gamut.

また、本発明の照明装置は、複数個の発光装置101を所定の配置となるように設置したものだけでなく、１個の発光装置101を所定の配置となるように設置したものでもよい。   Further, the lighting device of the present invention is not limited to one in which a plurality of light emitting devices 101 are installed in a predetermined arrangement, but may be one in which one light emitting device 101 is installed in a predetermined arrangement.

本発明の発光装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the light-emitting device of this invention. 本発明の発光装置の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the light-emitting device of this invention. 本発明の照明装置の実施の形態の一例を示す平面図である。It is a top view which shows an example of embodiment of the illuminating device of this invention. 図３の照明装置の断面図である。It is sectional drawing of the illuminating device of FIG. 本発明の照明装置の実施の形態の他の例を示す平面図である。It is a top view which shows the other example of embodiment of the illuminating device of this invention. 図５の照明装置の断面図である。It is sectional drawing of the illuminating device of FIG. 従来の発光装置を示す断面図である。It is sectional drawing which shows the conventional light-emitting device.

符号の説明Explanation of symbols

１：基体
１ａ：凸部
２：反射部材
２ａ：光反射面
３：発光素子
４：接続パッド
４ａ：導電路
５：波長変換部材
６：透光性部材
７：導電性接合材 1: Base 1a: Convex part 2: Reflecting member 2a: Light reflecting surface 3: Light emitting element 4: Connection pad 4a: Conductive path 5: Wavelength converting member 6: Translucent member 7: Conductive bonding material

Claims (4)

上側主面に接続パッドを有するとともに該接続パッドから下側主面または側面にかけて導電路が形成された基体と、該基体の上側主面に前記接続パッドを取り囲むように接合されるとともに内周面が光反射面とされている反射部材と、下面の電極が前記接続パッドに導電性接合材を介して接続された発光素子と、該発光素子の上面および側面を覆うように設けられた透光性部材と、前記導電性接合材および前記透光性部材を覆うように設けられた波長変換部材とを具備していることを特徴とする発光装置。 A base body having a connection pad on the upper main surface and a conductive path formed from the connection pad to the lower main surface or side surface, and an inner peripheral surface joined to the upper main surface of the base body so as to surround the connection pad A light-reflecting member having a light-reflecting surface, a light-emitting element having an electrode on the lower surface connected to the connection pad via a conductive bonding material, and a light-transmitting element provided so as to cover the upper and side surfaces of the light-emitting element And a wavelength conversion member provided to cover the conductive bonding material and the translucent member. 前記波長変換部材は前記反射部材と前記基体との接合部を覆っていることを特徴とする請求項１記載の発光装置。 The light emitting device according to claim 1, wherein the wavelength conversion member covers a joint portion between the reflection member and the base. 前記基体の上側主面に凸部が形成されており、該凸部の上面に前記接続パッドが形成されていることを特徴とする請求項１または請求項２記載の発光装置。 The light emitting device according to claim 1, wherein a convex portion is formed on an upper main surface of the base body, and the connection pad is formed on an upper surface of the convex portion. 請求項１乃至請求項３のいずれかに記載の発光装置を光源として用いたことを特徴とする照明装置。 An illuminating device using the light-emitting device according to claim 1 as a light source.
JP2004313018A 2004-10-27 2004-10-27 Light emitting device and lighting device Pending JP2006128322A (en)

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