JP2006100807A5 - - Google Patents
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- Publication number
- JP2006100807A5 JP2006100807A5 JP2005246250A JP2005246250A JP2006100807A5 JP 2006100807 A5 JP2006100807 A5 JP 2006100807A5 JP 2005246250 A JP2005246250 A JP 2005246250A JP 2005246250 A JP2005246250 A JP 2005246250A JP 2006100807 A5 JP2006100807 A5 JP 2006100807A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- forming
- electrode layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 91
- 239000004065 semiconductor Substances 0.000 claims 50
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 238000007599 discharging Methods 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 5
- 239000011241 protective layer Substances 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005246250A JP5030406B2 (ja) | 2004-08-30 | 2005-08-26 | 表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004251036 | 2004-08-30 | ||
| JP2004251036 | 2004-08-30 | ||
| JP2005246250A JP5030406B2 (ja) | 2004-08-30 | 2005-08-26 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006100807A JP2006100807A (ja) | 2006-04-13 |
| JP2006100807A5 true JP2006100807A5 (enrdf_load_stackoverflow) | 2008-08-07 |
| JP5030406B2 JP5030406B2 (ja) | 2012-09-19 |
Family
ID=36240269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005246250A Expired - Fee Related JP5030406B2 (ja) | 2004-08-30 | 2005-08-26 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5030406B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5128091B2 (ja) * | 2006-08-04 | 2013-01-23 | 三菱電機株式会社 | 表示装置及びその製造方法 |
| KR100864884B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
| KR101410926B1 (ko) * | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| JP5324758B2 (ja) * | 2007-06-05 | 2013-10-23 | 三菱電機株式会社 | 薄膜トランジスタ、表示装置、およびその製造方法 |
| JP5182993B2 (ja) * | 2008-03-31 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| US20100224878A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5642447B2 (ja) * | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101056427B1 (ko) * | 2009-08-13 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터의 제조방법 및 그를 포함하는 유기전계발광표시장치의 제조방법 |
| CN104992962B (zh) | 2009-12-04 | 2018-12-25 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR101042957B1 (ko) | 2010-03-19 | 2011-06-20 | 삼성모바일디스플레이주식회사 | 트랜지스터 기판, 및 이의 제조 방법 |
| CN102692815B (zh) * | 2012-05-23 | 2014-05-21 | 深圳市华星光电技术有限公司 | 光掩模及其制造方法 |
| KR101438642B1 (ko) * | 2013-11-04 | 2014-09-17 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| KR102170999B1 (ko) * | 2014-07-30 | 2020-10-29 | 삼성디스플레이 주식회사 | 표시장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243327A (ja) * | 2002-02-20 | 2003-08-29 | Seiko Epson Corp | 電子デバイス、配線形成方法および配線形成装置 |
| JP3864413B2 (ja) * | 2002-04-22 | 2006-12-27 | セイコーエプソン株式会社 | トランジスタの製造方法 |
| JP2003347567A (ja) * | 2002-05-23 | 2003-12-05 | Sharp Corp | 半導体デバイスおよびその製造方法 |
| JP4342843B2 (ja) * | 2002-06-12 | 2009-10-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2005
- 2005-08-26 JP JP2005246250A patent/JP5030406B2/ja not_active Expired - Fee Related