JP2006091462A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2006091462A JP2006091462A JP2004277263A JP2004277263A JP2006091462A JP 2006091462 A JP2006091462 A JP 2006091462A JP 2004277263 A JP2004277263 A JP 2004277263A JP 2004277263 A JP2004277263 A JP 2004277263A JP 2006091462 A JP2006091462 A JP 2006091462A
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- JP
- Japan
- Prior art keywords
- emitting element
- light emitting
- light
- image sensor
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000012937 correction Methods 0.000 claims abstract description 127
- 238000003384 imaging method Methods 0.000 claims abstract description 71
- 238000003860 storage Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 11
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 115
- 230000006870 function Effects 0.000 description 107
- 235000019557 luminance Nutrition 0.000 description 60
- 239000000758 substrate Substances 0.000 description 55
- 239000010409 thin film Substances 0.000 description 37
- 230000008859 change Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- 238000001514 detection method Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 21
- 230000003321 amplification Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 14
- 238000003199 nucleic acid amplification method Methods 0.000 description 14
- 238000005192 partition Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000004696 coordination complex Chemical class 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- ODNHQUQWHMGWGT-UHFFFAOYSA-N iridium;oxotin Chemical compound [Ir].[Sn]=O ODNHQUQWHMGWGT-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
- Position Input By Displaying (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004277263A JP2006091462A (ja) | 2004-09-24 | 2004-09-24 | 表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004277263A JP2006091462A (ja) | 2004-09-24 | 2004-09-24 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010269919A Division JP5312435B2 (ja) | 2010-12-03 | 2010-12-03 | 表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006091462A true JP2006091462A (ja) | 2006-04-06 |
| JP2006091462A5 JP2006091462A5 (https=) | 2007-08-16 |
Family
ID=36232523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004277263A Withdrawn JP2006091462A (ja) | 2004-09-24 | 2004-09-24 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006091462A (https=) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008126768A1 (ja) * | 2007-04-09 | 2008-10-23 | Sharp Kabushiki Kaisha | 表示装置 |
| JP2009071258A (ja) * | 2007-09-14 | 2009-04-02 | Samsung Sdi Co Ltd | 有機電界発光装置及びその製造方法 |
| JP2010170246A (ja) * | 2009-01-21 | 2010-08-05 | Semiconductor Energy Lab Co Ltd | タッチパネル、電子機器 |
| WO2011111530A1 (en) * | 2010-03-11 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012008169A (ja) * | 2010-06-22 | 2012-01-12 | Sony Corp | 画像表示装置、電子機器、測定治具、画像表示システム、画像表示方法、表示補正装置、表示補正方法、プログラム |
| JP2012517618A (ja) * | 2009-02-06 | 2012-08-02 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | ディスプレイデバイスにおける光検知 |
| WO2013128565A1 (ja) * | 2012-02-28 | 2013-09-06 | 株式会社日本マイクロニクス | 照明補正装置 |
| JP2014191166A (ja) * | 2013-03-27 | 2014-10-06 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JPWO2013128565A1 (ja) * | 2012-02-28 | 2015-07-30 | 株式会社日本マイクロニクス | 照明補正装置 |
| JP2016015145A (ja) * | 2010-12-15 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017018059A1 (ja) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | 表示パネル、表示装置、及び、電子機器 |
| EP3442025A1 (fr) * | 2017-08-11 | 2019-02-13 | Isorg | Système d'affichage comprenant un capteur d'images |
| WO2019167425A1 (ja) * | 2018-02-27 | 2019-09-06 | ソニー株式会社 | 電子デバイス |
| WO2020136731A1 (ja) * | 2018-12-25 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | 補正画像生成システム、画像制御方法、画像制御プログラム、および記録媒体 |
| JP2021010035A (ja) * | 2014-04-30 | 2021-01-28 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
| CN112928134A (zh) * | 2021-02-03 | 2021-06-08 | 武汉华星光电技术有限公司 | 阵列基板和显示面板 |
| JP2021166056A (ja) * | 2013-06-07 | 2021-10-14 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| WO2022248984A1 (ja) * | 2021-05-27 | 2022-12-01 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2023281347A1 (ja) * | 2021-07-08 | 2023-01-12 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
| JPWO2023026125A1 (https=) * | 2021-08-27 | 2023-03-02 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10185684A (ja) * | 1996-12-19 | 1998-07-14 | Minolta Co Ltd | 固体走査型光書込み装置及びその光量測定方法 |
| JP2002072964A (ja) * | 2000-06-13 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2002169511A (ja) * | 2000-09-19 | 2002-06-14 | Semiconductor Energy Lab Co Ltd | 自発光装置およびその駆動方法 |
| JP2002176162A (ja) * | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | エリアセンサ及びエリアセンサを備えた表示装置 |
| WO2003038798A2 (en) * | 2001-10-31 | 2003-05-08 | Cambridge Display Technology Limited | Display driver circuits for electro-optic displays |
| JP2003173869A (ja) * | 2001-12-05 | 2003-06-20 | Sony Corp | 表示装置 |
| JP2003527630A (ja) * | 2000-03-14 | 2003-09-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 経時及び周囲光に依存して輝度補正するエレクトロルミネッセント表示装置 |
-
2004
- 2004-09-24 JP JP2004277263A patent/JP2006091462A/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10185684A (ja) * | 1996-12-19 | 1998-07-14 | Minolta Co Ltd | 固体走査型光書込み装置及びその光量測定方法 |
| JP2003527630A (ja) * | 2000-03-14 | 2003-09-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 経時及び周囲光に依存して輝度補正するエレクトロルミネッセント表示装置 |
| JP2002072964A (ja) * | 2000-06-13 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2002176162A (ja) * | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | エリアセンサ及びエリアセンサを備えた表示装置 |
| JP2002169511A (ja) * | 2000-09-19 | 2002-06-14 | Semiconductor Energy Lab Co Ltd | 自発光装置およびその駆動方法 |
| WO2003038798A2 (en) * | 2001-10-31 | 2003-05-08 | Cambridge Display Technology Limited | Display driver circuits for electro-optic displays |
| JP2003173869A (ja) * | 2001-12-05 | 2003-06-20 | Sony Corp | 表示装置 |
Cited By (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008126768A1 (ja) * | 2007-04-09 | 2008-10-23 | Sharp Kabushiki Kaisha | 表示装置 |
| JP2009071258A (ja) * | 2007-09-14 | 2009-04-02 | Samsung Sdi Co Ltd | 有機電界発光装置及びその製造方法 |
| US8076669B2 (en) | 2007-09-14 | 2011-12-13 | Samsung Mobile Display Co., Ltd. | Organic light emitting display and method of manufacturing the same |
| JP2010170246A (ja) * | 2009-01-21 | 2010-08-05 | Semiconductor Energy Lab Co Ltd | タッチパネル、電子機器 |
| US9389720B2 (en) | 2009-01-21 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and electronic device |
| US9874979B2 (en) | 2009-01-21 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and electronic device |
| US8847916B2 (en) | 2009-01-21 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and electronic device |
| JP2012517618A (ja) * | 2009-02-06 | 2012-08-02 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | ディスプレイデバイスにおける光検知 |
| US8502902B2 (en) | 2010-03-11 | 2013-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10031622B2 (en) | 2010-03-11 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011111530A1 (en) * | 2010-03-11 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012008169A (ja) * | 2010-06-22 | 2012-01-12 | Sony Corp | 画像表示装置、電子機器、測定治具、画像表示システム、画像表示方法、表示補正装置、表示補正方法、プログラム |
| US9841843B2 (en) | 2010-12-15 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP2016015145A (ja) * | 2010-12-15 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI602338B (zh) * | 2012-02-28 | 2017-10-11 | 日本麥克隆尼股份有限公司 | Lighting correction device |
| JPWO2013128565A1 (ja) * | 2012-02-28 | 2015-07-30 | 株式会社日本マイクロニクス | 照明補正装置 |
| WO2013128565A1 (ja) * | 2012-02-28 | 2013-09-06 | 株式会社日本マイクロニクス | 照明補正装置 |
| JP2014191166A (ja) * | 2013-03-27 | 2014-10-06 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US12399665B2 (en) | 2013-06-07 | 2025-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising bendable touch panel |
| US12131087B2 (en) | 2013-06-07 | 2024-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising bending member comprising hinge components |
| JP2021166056A (ja) * | 2013-06-07 | 2021-10-14 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| JP2021010035A (ja) * | 2014-04-30 | 2021-01-28 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
| US11158246B2 (en) | 2015-07-28 | 2021-10-26 | Sony Group Corporation | Display panel, display device, and electronic device |
| WO2017018059A1 (ja) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | 表示パネル、表示装置、及び、電子機器 |
| US10657881B2 (en) | 2015-07-28 | 2020-05-19 | Sony Corporation | Display panel, display device, and electronic device |
| CN107851408A (zh) * | 2015-07-28 | 2018-03-27 | 索尼公司 | 显示面板、显示装置及电子设备 |
| US11854474B2 (en) | 2015-07-28 | 2023-12-26 | Sony Group Corporation | Display panel, display device, and electronic device |
| EP3442025A1 (fr) * | 2017-08-11 | 2019-02-13 | Isorg | Système d'affichage comprenant un capteur d'images |
| US11443544B2 (en) | 2018-02-27 | 2022-09-13 | Sony Corporation | Electronic device |
| JPWO2019167425A1 (ja) * | 2018-02-27 | 2021-03-18 | ソニー株式会社 | 電子デバイス |
| WO2019167425A1 (ja) * | 2018-02-27 | 2019-09-06 | ソニー株式会社 | 電子デバイス |
| CN113272886A (zh) * | 2018-12-25 | 2021-08-17 | 堺显示器制品株式会社 | 校正图像生成系统、图像控制方法、图像控制程序以及记录介质 |
| WO2020136731A1 (ja) * | 2018-12-25 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | 補正画像生成システム、画像制御方法、画像制御プログラム、および記録媒体 |
| JP6722366B1 (ja) * | 2018-12-25 | 2020-07-15 | 堺ディスプレイプロダクト株式会社 | 補正画像生成システム、画像制御方法、画像制御プログラム、および記録媒体 |
| CN112928134B (zh) * | 2021-02-03 | 2022-09-09 | 武汉华星光电技术有限公司 | 阵列基板和显示面板 |
| US12027543B2 (en) | 2021-02-03 | 2024-07-02 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Array substrate and display panel |
| CN112928134A (zh) * | 2021-02-03 | 2021-06-08 | 武汉华星光电技术有限公司 | 阵列基板和显示面板 |
| WO2022248984A1 (ja) * | 2021-05-27 | 2022-12-01 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2023281347A1 (ja) * | 2021-07-08 | 2023-01-12 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
| JPWO2023281347A1 (https=) * | 2021-07-08 | 2023-01-12 | ||
| JPWO2023026125A1 (https=) * | 2021-08-27 | 2023-03-02 | ||
| WO2023026125A1 (ja) * | 2021-08-27 | 2023-03-02 | 株式会社半導体エネルギー研究所 | 表示装置の補正方法、および表示装置 |
| US12505802B2 (en) | 2021-08-27 | 2025-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Correction method of display apparatus and the display apparatus |
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