JP2006080234A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2006080234A
JP2006080234A JP2004261474A JP2004261474A JP2006080234A JP 2006080234 A JP2006080234 A JP 2006080234A JP 2004261474 A JP2004261474 A JP 2004261474A JP 2004261474 A JP2004261474 A JP 2004261474A JP 2006080234 A JP2006080234 A JP 2006080234A
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JP
Japan
Prior art keywords
wiring
layer
semiconductor device
alloy
additive
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Pending
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JP2004261474A
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English (en)
Japanese (ja)
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JP2006080234A5 (fr
Inventor
Kenichi Mori
健壹 森
Kazuyoshi Maekawa
和義 前川
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004261474A priority Critical patent/JP2006080234A/ja
Publication of JP2006080234A publication Critical patent/JP2006080234A/ja
Publication of JP2006080234A5 publication Critical patent/JP2006080234A5/ja
Pending legal-status Critical Current

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JP2004261474A 2004-09-08 2004-09-08 半導体装置およびその製造方法 Pending JP2006080234A (ja)

Priority Applications (1)

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JP2004261474A JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

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JP2004261474A JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

Publications (2)

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JP2006080234A true JP2006080234A (ja) 2006-03-23
JP2006080234A5 JP2006080234A5 (fr) 2007-10-04

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JP2004261474A Pending JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141315A (ja) * 2007-11-14 2009-06-25 Fujitsu Ltd 半導体装置およびその製造方法
WO2009153834A1 (fr) * 2008-06-18 2009-12-23 富士通株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2010010250A (ja) * 2008-06-25 2010-01-14 Fujitsu Microelectronics Ltd 半導体装置およびその製造方法
WO2010004998A1 (fr) * 2008-07-11 2010-01-14 東京エレクトロン株式会社 Procédé de formation de film et système de traitement
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US7875976B2 (en) 2006-10-05 2011-01-25 Kabushiki Kaisha Toshiba Semiconductor device including a silicide layer and a dielectric layer
US8003527B2 (en) 2009-08-06 2011-08-23 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device
JP2013243408A (ja) * 2007-06-12 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置及び配線
US9559058B2 (en) 2007-11-14 2017-01-31 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
JP6350754B1 (ja) * 2017-01-20 2018-07-04 凸版印刷株式会社 表示装置及び表示装置基板

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875976B2 (en) 2006-10-05 2011-01-25 Kabushiki Kaisha Toshiba Semiconductor device including a silicide layer and a dielectric layer
JP2013243408A (ja) * 2007-06-12 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置及び配線
US9935363B2 (en) 2007-06-12 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009141315A (ja) * 2007-11-14 2009-06-25 Fujitsu Ltd 半導体装置およびその製造方法
US9559058B2 (en) 2007-11-14 2017-01-31 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
WO2009153834A1 (fr) * 2008-06-18 2009-12-23 富士通株式会社 Dispositif à semi-conducteur et son procédé de fabrication
US8836122B2 (en) 2008-06-18 2014-09-16 Fujitsu Limited Semiconductor device having copper wiring with increased migration resistance
JP5310721B2 (ja) * 2008-06-18 2013-10-09 富士通株式会社 半導体装置とその製造方法
JP2010010250A (ja) * 2008-06-25 2010-01-14 Fujitsu Microelectronics Ltd 半導体装置およびその製造方法
WO2010004998A1 (fr) * 2008-07-11 2010-01-14 東京エレクトロン株式会社 Procédé de formation de film et système de traitement
US8440563B2 (en) 2008-07-11 2013-05-14 Tokyo Electron Limited Film forming method and processing system
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US8003527B2 (en) 2009-08-06 2011-08-23 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device
JP6350754B1 (ja) * 2017-01-20 2018-07-04 凸版印刷株式会社 表示装置及び表示装置基板

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