JP2006060385A - 共振器及びそれを用いるフィルタ - Google Patents

共振器及びそれを用いるフィルタ Download PDF

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Publication number
JP2006060385A
JP2006060385A JP2004238398A JP2004238398A JP2006060385A JP 2006060385 A JP2006060385 A JP 2006060385A JP 2004238398 A JP2004238398 A JP 2004238398A JP 2004238398 A JP2004238398 A JP 2004238398A JP 2006060385 A JP2006060385 A JP 2006060385A
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JP
Japan
Prior art keywords
resonance
film
holding member
cavity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004238398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006060385A5 (enExample
Inventor
Naohiro Tsurumi
直大 鶴見
Daisuke Ueda
大助 上田
Takeshi Tanaka
毅 田中
Yasuhiro Uemoto
康裕 上本
Kazuhiro Hachiman
和宏 八幡
Atsuhiko Kanda
敦彦 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004238398A priority Critical patent/JP2006060385A/ja
Priority to US11/194,460 priority patent/US7456707B2/en
Publication of JP2006060385A publication Critical patent/JP2006060385A/ja
Publication of JP2006060385A5 publication Critical patent/JP2006060385A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2004238398A 2004-08-18 2004-08-18 共振器及びそれを用いるフィルタ Withdrawn JP2006060385A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004238398A JP2006060385A (ja) 2004-08-18 2004-08-18 共振器及びそれを用いるフィルタ
US11/194,460 US7456707B2 (en) 2004-08-18 2005-08-02 Resonator and filter using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004238398A JP2006060385A (ja) 2004-08-18 2004-08-18 共振器及びそれを用いるフィルタ

Publications (2)

Publication Number Publication Date
JP2006060385A true JP2006060385A (ja) 2006-03-02
JP2006060385A5 JP2006060385A5 (enExample) 2007-09-27

Family

ID=35909081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004238398A Withdrawn JP2006060385A (ja) 2004-08-18 2004-08-18 共振器及びそれを用いるフィルタ

Country Status (2)

Country Link
US (1) US7456707B2 (enExample)
JP (1) JP2006060385A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006217281A (ja) * 2005-02-03 2006-08-17 Toshiba Corp 薄膜バルク音響装置の製造方法
FR2890490A1 (fr) * 2005-09-05 2007-03-09 St Microelectronics Sa Support de resonateur acoustique et circuit integre correspondant
US7528681B2 (en) * 2005-12-20 2009-05-05 Palo Alto Research Center Incorporated Acoustic devices using an AlGaN piezoelectric region
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
US8902023B2 (en) * 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US20120326807A1 (en) * 2009-06-24 2012-12-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9219464B2 (en) 2009-11-25 2015-12-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US8384497B2 (en) * 2009-12-18 2013-02-26 Hao Zhang Piezoelectric resonator structure having an interference structure
KR101708893B1 (ko) * 2010-09-01 2017-03-08 삼성전자주식회사 체적 음향 공진기 구조 및 제조 방법
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9225311B2 (en) 2012-02-21 2015-12-29 International Business Machines Corporation Method of manufacturing switchable filters
JP2016127467A (ja) * 2015-01-06 2016-07-11 セイコーエプソン株式会社 振動デバイス、電子機器及び移動体
US10339776B2 (en) * 2017-11-14 2019-07-02 Sensormatic Electronics Llc Security marker

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162691A (en) * 1991-01-22 1992-11-10 The United States Of America As Represented By The Secretary Of The Army Cantilevered air-gap type thin film piezoelectric resonator
KR970013677A (ko) 1995-08-17 1997-03-29 빈센트 비. 인그라시아 밀봉된 캐비티를 가진 박막 압전 공진기와 그 조립방법
DE69739289D1 (de) 1996-10-17 2009-04-16 Avago Technologies Wireless Ip Chtoberflächenwellenresonatoren
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
US6635519B2 (en) * 2002-01-10 2003-10-21 Agere Systems, Inc. Structurally supported thin film resonator and method of fabrication
KR100485702B1 (ko) * 2003-05-29 2005-04-28 삼성전자주식회사 지지대를 갖는 박막 벌크 음향 공진기 및 그 제조방법
US7038559B2 (en) * 2004-02-23 2006-05-02 Ruby Richard C Vertically separated acoustic filters and resonators
US7227433B2 (en) * 2004-03-31 2007-06-05 Intel Corporation Electro mechanical device having a sealed cavity
US7623007B2 (en) * 2005-10-19 2009-11-24 Panasonic Corporation Device including piezoelectric thin film and a support having a vertical cross-section with a curvature

Also Published As

Publication number Publication date
US20060038636A1 (en) 2006-02-23
US7456707B2 (en) 2008-11-25

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