JP2006024715A5 - - Google Patents

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Publication number
JP2006024715A5
JP2006024715A5 JP2004201011A JP2004201011A JP2006024715A5 JP 2006024715 A5 JP2006024715 A5 JP 2006024715A5 JP 2004201011 A JP2004201011 A JP 2004201011A JP 2004201011 A JP2004201011 A JP 2004201011A JP 2006024715 A5 JP2006024715 A5 JP 2006024715A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004201011A
Other versions
JP2006024715A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004201011A priority Critical patent/JP2006024715A/ja
Priority claimed from JP2004201011A external-priority patent/JP2006024715A/ja
Priority to US11/174,722 priority patent/US7477353B2/en
Priority to TW098103122A priority patent/TW200938963A/zh
Priority to TW094123063A priority patent/TW200622504A/zh
Priority to TW098103115A priority patent/TW200938962A/zh
Publication of JP2006024715A publication Critical patent/JP2006024715A/ja
Publication of JP2006024715A5 publication Critical patent/JP2006024715A5/ja
Priority to US12/341,179 priority patent/US7796237B2/en
Pending legal-status Critical Current

Links

JP2004201011A 2004-07-07 2004-07-07 リソグラフィー装置およびパターン形成方法 Pending JP2006024715A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004201011A JP2006024715A (ja) 2004-07-07 2004-07-07 リソグラフィー装置およびパターン形成方法
US11/174,722 US7477353B2 (en) 2004-07-07 2005-07-06 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
TW098103122A TW200938963A (en) 2004-07-07 2005-07-07 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
TW094123063A TW200622504A (en) 2004-07-07 2005-07-07 Lithography apparatus and pattern forming method
TW098103115A TW200938962A (en) 2004-07-07 2005-07-07 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
US12/341,179 US7796237B2 (en) 2004-07-07 2008-12-22 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004201011A JP2006024715A (ja) 2004-07-07 2004-07-07 リソグラフィー装置およびパターン形成方法

Publications (2)

Publication Number Publication Date
JP2006024715A JP2006024715A (ja) 2006-01-26
JP2006024715A5 true JP2006024715A5 (ja) 2007-06-07

Family

ID=35540975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004201011A Pending JP2006024715A (ja) 2004-07-07 2004-07-07 リソグラフィー装置およびパターン形成方法

Country Status (3)

Country Link
US (2) US7477353B2 (ja)
JP (1) JP2006024715A (ja)
TW (3) TW200938963A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置
JP4921913B2 (ja) * 2006-10-02 2012-04-25 株式会社東芝 基板洗浄方法
JP2008300578A (ja) * 2007-05-30 2008-12-11 Canon Inc 露光装置およびデバイス製造方法
NL1036460A1 (nl) 2008-02-20 2009-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2172766A1 (en) * 2008-10-03 2010-04-07 ASML Netherlands B.V. Lithographic apparatus and humidity measurement system
NL2009533A (en) 2011-10-27 2013-05-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP6853704B2 (ja) * 2017-03-22 2021-03-31 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
CN109326730B (zh) * 2017-08-01 2024-02-13 拓旷(上海)光电科技有限公司 用于有机发光二极管显示器的制造设备
CN208297925U (zh) * 2018-01-02 2018-12-28 长鑫存储技术有限公司 浸润式曝光后移除残留水滴的装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2516194B2 (ja) 1984-06-11 1996-07-10 株式会社日立製作所 投影露光方法
JP2646413B2 (ja) * 1992-02-21 1997-08-27 キヤノン株式会社 投影露光方法
JPH09199462A (ja) 1996-01-16 1997-07-31 Oki Electric Ind Co Ltd ウエハ洗浄方法及びそのための装置
JP3849822B2 (ja) * 1997-04-07 2006-11-22 株式会社ニコン リソク゛ラフィシステム
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH11260884A (ja) * 1998-03-09 1999-09-24 Dainippon Screen Mfg Co Ltd 基板処理装置
US6183147B1 (en) * 1998-06-15 2001-02-06 Tokyo Electron Limited Process solution supply system, substrate processing apparatus employing the system, and intermediate storage mechanism employed in the system
JP3552600B2 (ja) 1998-07-13 2004-08-11 東京エレクトロン株式会社 基板処理装置
US6319322B1 (en) * 1998-07-13 2001-11-20 Tokyo Electron Limited Substrate processing apparatus
JP3495954B2 (ja) 1998-10-13 2004-02-09 東京エレクトロン株式会社 パタ−ン形成装置及び塗布、現像装置
JP3943828B2 (ja) * 2000-12-08 2007-07-11 東京エレクトロン株式会社 塗布、現像装置及びパターン形成方法
JP2003124283A (ja) 2001-10-10 2003-04-25 Tokyo Electron Ltd 基板処理装置
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
EP1571694A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate

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