JP2006019940A - Method for manufacturing piezo-oscillator - Google Patents

Method for manufacturing piezo-oscillator Download PDF

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JP2006019940A
JP2006019940A JP2004194442A JP2004194442A JP2006019940A JP 2006019940 A JP2006019940 A JP 2006019940A JP 2004194442 A JP2004194442 A JP 2004194442A JP 2004194442 A JP2004194442 A JP 2004194442A JP 2006019940 A JP2006019940 A JP 2006019940A
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oscillator
integrated circuit
substrate
circuit element
control data
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JP4472445B2 (en
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Toshio Nakazawa
利夫 中澤
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Kyocera Crystal Device Corp
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<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a piezo-oscillator for obtaining a compact piezo-oscillator that is simply handled and is superior in productivity. <P>SOLUTION: A motherboard 15 is prepared, which has an oscillator substrate region 20 having two spaces 16a, 16b, and a sacrificial marginal region 21 having a characteristic control data write terminal 17 and a characteristic measurement terminal 18. Then, a crystal oscillator element 5 is mounted to the front main surface side of each oscillator substrate region 20 on the motherboard 15 for airtight sealing by a lid body before electric characteristics are measured in the crystal oscillator element 5. An integrated circuit element 7 is mounted onto an inside bottom surface at the space 16b on a rear main surface. Characteristic control data are inputted to the integrated circuit element 7 in each oscillator substrate region 20 via the characteristic control data write terminal 17. The characteristic control data are stored in a memory in the integrated circuit element 7. The motherboard 15 is cut along the outer periphery of the each oscillator substrate region 20. As a result, the piezo-oscillator is manufactured by separating each oscillator substrate region 20 from the sacrificial marginal region 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、携帯用通信機器等の電子機器に用いられる圧電発振器の製造方法に関するものであり、特に小型化に適した圧電発振器の製造方法に関する。   The present invention relates to a method for manufacturing a piezoelectric oscillator used in an electronic device such as a portable communication device, and more particularly to a method for manufacturing a piezoelectric oscillator suitable for downsizing.

従来より、携帯用通信機器等の電子機器に圧電発振器が用いられている。かかる従来の圧電発振器としては、例えば、圧電発振器の一つである温度補償型水晶発振器では、下面に複数個の外部端子52が被着されている枠状基体51の上面に、内部に圧電素子である水晶振動素子54が収容されている容器体53を取着させるとともに、前記枠状基体51の内壁面と容器体53の下面とで囲まれるキャビティ部55に前記水晶振動素子54の振動に基づいて発振出力を制御する集積回路素子56やコンデンサ等の電子部品素子57を配設し、これらの集積回路素子56や電子部品素子57を前記容器体53の下面に搭載した構造のものが知られている(例えば、特許文献1参照。)。   Conventionally, piezoelectric oscillators have been used in electronic devices such as portable communication devices. As such a conventional piezoelectric oscillator, for example, in a temperature-compensated crystal oscillator which is one of the piezoelectric oscillators, a piezoelectric element is formed on the upper surface of a frame-shaped substrate 51 having a plurality of external terminals 52 attached to the lower surface. Is attached to the container body 53 in which the crystal resonator element 54 is accommodated, and the cavity portion 55 surrounded by the inner wall surface of the frame-shaped substrate 51 and the lower surface of the container body 53 is adapted to vibrate the crystal resonator element 54. An integrated circuit element 56 for controlling the oscillation output based on this and an electronic component element 57 such as a capacitor are provided, and the integrated circuit element 56 and the electronic component element 57 are mounted on the lower surface of the container body 53. (For example, refer to Patent Document 1).

尚、このような容器体53の基板や上述した枠状基体51は、通常、ガラス−セラミック等のセラミック材料によって一体的に形成されており、その内部及び表面には配線導体が形成され、従来周知のセラミックグリーンシート積層法等を採用することによって製作されている。また、容器体53の内部若しくは外側面等には、水晶振動素子54の電気的特性を測定する為の測定端子が形成されていることが一般的であった。(例えば、特許文献2参照。)。   The substrate of the container body 53 and the frame-shaped base 51 described above are usually integrally formed of a ceramic material such as glass-ceramic, and a wiring conductor is formed inside and on the surface. It is manufactured by adopting a known ceramic green sheet lamination method or the like. In addition, a measurement terminal for measuring the electrical characteristics of the crystal resonator element 54 is generally formed on the inside or the outer surface of the container body 53. (For example, refer to Patent Document 2).

更に、前記集積回路素子56の内部には、水晶振動素子54の温度特性に応じて作成された温度補償データに基づいて水晶発振器の発振出力を補正するための温度補償回路が設けられており、温度補償型水晶発振器を組み立てた後、上述の温度補償データを集積回路素子56内のメモリに格納するために、枠状基体51の下面や外側面等に温度補償データ書込用の特性制御データ書込端子(図示せず)を設けておくのが一般的であった。   Furthermore, a temperature compensation circuit for correcting the oscillation output of the crystal oscillator based on the temperature compensation data created according to the temperature characteristic of the crystal resonator element 54 is provided inside the integrated circuit element 56, After assembling the temperature-compensated crystal oscillator, in order to store the above-mentioned temperature compensation data in the memory in the integrated circuit element 56, the characteristic control data for writing the temperature compensation data on the lower surface or the outer surface of the frame-like substrate 51 Generally, a write terminal (not shown) is provided.

前記のような圧電発振器の製造方法については、以下のような文献が開示されている。   The following literature is disclosed about the manufacturing method of the above piezoelectric oscillators.

特開2000―151283号公報(図2、図5)JP 2000-151283 A (FIGS. 2 and 5) 特開2002―190710号公報(図1)JP 2002-190710 A (FIG. 1)

尚、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。   In addition, the applicant has not found any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

しかしながら、上述した従来の圧電発振器においては、枠状基体51の下面や外側面等に温度補償データを書き込むための特性制御データ書込端子が設けられており、これらの特性制御データ書込端子を配置させるための広いスペースが枠状基体51の表面に必要となることから、その分、枠状基体51の面積が面方向もしくは厚み方向に大きくなり、全体構造の小型化に供しないという不都合があることに加え、圧電発振器をマザーボード等の外部電気回路に搭載する際に両者の接合に用いられている導電性接合材の一部が特性制御データ書込端子に付着して圧電発振器の外部接続用端子との間でショートを招く恐れがあり、そのため、前記外部端子に対応したマザーボード側の電極形状に自由度がなくなる等、製品の取り扱いが煩雑であるという不都合もあった。   However, in the conventional piezoelectric oscillator described above, a characteristic control data write terminal for writing temperature compensation data is provided on the lower surface and the outer surface of the frame-shaped substrate 51, and these characteristic control data write terminals are provided. Since a wide space for the arrangement is required on the surface of the frame-shaped substrate 51, the area of the frame-shaped substrate 51 is increased in the surface direction or the thickness direction, and there is a disadvantage that the entire structure is not miniaturized. In addition, when the piezoelectric oscillator is mounted on an external electric circuit such as a mother board, a part of the conductive bonding material used for bonding the two adheres to the characteristic control data writing terminal and externally connects the piezoelectric oscillator. There is a risk of short-circuiting with the terminal for the product, and therefore the handling of the product is complicated, such as the freedom of the electrode shape on the motherboard side corresponding to the external terminal. There was also a disadvantage that.

また、同様に内部に圧電振動素子の電気的特性を測定する為の測定端子が設けられており、これらの測定端子を配置させるための広いスペースが容器体内部に必要となることから、小型化に適さないという欠点があった。更に、同様に内部に測定端子を形成する場合、集積回路素子搭載時に、集積回路素子と測定端子との間で浮遊容量が発生し、電気的特性に影響を与えるという欠点があった。   Similarly, a measurement terminal for measuring the electrical characteristics of the piezoelectric vibration element is provided in the interior, and a large space is required inside the container body to arrange these measurement terminals. There was a disadvantage that it was not suitable for. Further, when the measurement terminal is formed in the same manner, there is a drawback that stray capacitance is generated between the integrated circuit element and the measurement terminal when the integrated circuit element is mounted, which affects the electrical characteristics.

また、上述の特性制御データ書込端子が枠状基体51の外側面に配置させてある場合は、枠状基体51の製作に用いられるセラミック製の母基板に貫通穴を開けて、その内面に電極パターンを被着させる等の複雑な加工プロセスが必要となり、それによって生産性の低下を招いてしまう上に、枠状基体51の外側面に設けられている特性制御データ書込端子に書込装置のプローブ針を直接当てて書込作業を行うことが極めて困難であることから、個々の圧電発振器を特性制御データ書込用のソケットに装着する等して特性制御データを書き込まなければならず、その場合、ソケット等の製造設備が別途、必要になるとともに、個々の圧電発振器をソケットに装着する等の煩雑な工程が必要となり、製造プロセスが複雑化する欠点を有していた。   Further, when the above-mentioned characteristic control data writing terminal is arranged on the outer side surface of the frame-shaped base 51, a through hole is formed in the ceramic mother substrate used for manufacturing the frame-shaped base 51, and the inner surface thereof is formed. A complicated processing process such as deposition of an electrode pattern is required, which leads to a decrease in productivity, and writing to a characteristic control data writing terminal provided on the outer surface of the frame-shaped substrate 51 Since it is extremely difficult to perform writing work by directly applying the probe needle of the device, it is necessary to write the characteristic control data by attaching individual piezoelectric oscillators to the socket for writing characteristic control data. In that case, manufacturing equipment such as a socket is required separately, and complicated steps such as mounting individual piezoelectric oscillators on the socket are required, which has the disadvantage that the manufacturing process becomes complicated.

更に上述した従来の圧電発振器においては、容器体53がセラミックグリーンシート積層法等によって一体的に形成されており、かかる製法によって得られる容器体23の下面に集積回路素子56が搭載されていることから、圧電発振器を"複数個取り"の手法によって製造するにあたり、容器体23が切り出される母基板に集積回路素子56を搭載した後で母基板を分割するような場合には、分割に伴う衝撃が集積回路素子56に対して直接的に伝わり、この衝撃によって集積回路素子56そのものや集積回路素子56と容器体53との接合部に破損を招来する欠点が誘発される。従って、従来の製造プロセスにおいては、通常、容器体53だけを"複数個取り"の手法によって製作し、分割後に得られた個々の個片に水晶振動素子54や集積回路素子56を個別に搭載することによって製品を組み立てるようにしており、その場合、個々の個片をキャリアに搭載して保持させた上、集積回路素子26等の搭載作業を行う必要があることから、その分、製造設備が増え、製造工程も複雑化する欠点を有していた。   Further, in the conventional piezoelectric oscillator described above, the container body 53 is integrally formed by a ceramic green sheet lamination method or the like, and the integrated circuit element 56 is mounted on the lower surface of the container body 23 obtained by such a manufacturing method. Thus, when the piezoelectric oscillator is manufactured by the method of “multiple picking”, when the integrated circuit element 56 is mounted on the mother substrate from which the container body 23 is cut out, the mother substrate is divided. Is directly transmitted to the integrated circuit element 56, and this impact induces a defect that causes damage to the integrated circuit element 56 itself or a joint between the integrated circuit element 56 and the container 53. Therefore, in the conventional manufacturing process, usually, only the container body 53 is manufactured by the “multi-piece” technique, and the crystal resonator element 54 and the integrated circuit element 56 are individually mounted on each individual piece obtained after the division. In that case, since it is necessary to mount the integrated circuit element 26 and the like after mounting the individual pieces on the carrier and holding them, the manufacturing equipment accordingly. And the manufacturing process is complicated.

本発明は上記欠点に鑑み案出されたもので、その目的は、取り扱いが簡便で、かつ、生産性にも優れた小型の圧電発振器を得ることができる圧電発振器の製造方法を提供することにある。   The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to provide a method of manufacturing a piezoelectric oscillator capable of obtaining a small piezoelectric oscillator that is easy to handle and excellent in productivity. is there.

本発明の圧電発振器の製造方法は、絶縁性の基板の表主面に凹形状の第1の空間部と、前記基板の裏主面に凹形状の第2の空間部とを形成し、前記第1の空間部に圧電振動素子を搭載し蓋体を前記第1の空間部開口部に被せて第1の空間部を気密封止し、前記第2の空間部には、前記圧電振動素子と電気的に接続する発振回路を組み込んだ集積回路素子、或いは前記集積回路素子及び電子部品素子を搭載した圧電発振器の製造方法において、
表主面に第1の空間部と、裏主面に第2の空間部とを形成した矩形状の発振器基板領域と、前記発振器基板領域の外周側面に該第2の空間部内に搭載する集積回路素子に電気的接続した特性制御データ書込端子と、第1の空間部内に搭載する圧電振動素子と電気的接続した特性測定端子とを設けた捨代領域を形成し、前記捨代領域を外周に形成した該発振器基板領域が複数個マトリックスに配列されて一体に構成されている母基板を形成する工程Aと、
前記母基板の各々の発振器基板領域の表主面に形成した前記第1の空間部に、圧電振動素子を搭載し、各々の前記第1の空間部の開口部を塞ぐように蓋体を配置し前記第1の空間部を気密封止した後、前記特性測定端子より圧電振動素子の特性を測定し、その特性値の良否を判定する工程Bと、
前記工程Bにおいて特性が良と判定された圧電振動素子が搭載されている発振器基板領域の裏主面に形成した前記第2の空間部に、前記圧電振動素子と電気的に接続する集積回路素子、或いは前記集積回路素子及び電子素子を搭載した後、前記特性制御データ書込端子より集積回路素子に発振特性制御データを入力し、前記集積回路素子内のメモリに発振特性制御データを格納する工程Cと、
前記母基板を各々の前記発振器基板領域の外周に沿って切断し、各前記発振器基板領域をその発振機器板領域内に搭載した各電子素子と電気的に接続した前記特性制御データ書込端子及び前記特性測定端子が設けられている各前記捨代領域から切り離し、複数個の圧電発振器を同時に得る工程Dと
を具備することを特徴とする圧電発振器の製造方法である。
The method for manufacturing a piezoelectric oscillator according to the present invention includes forming a concave first space portion on a front main surface of an insulating substrate and a concave second space portion on a back main surface of the substrate, A piezoelectric vibration element is mounted in the first space, a lid is placed over the first space opening to hermetically seal the first space, and the piezoelectric vibration element is disposed in the second space. In an integrated circuit element incorporating an oscillation circuit that is electrically connected to a piezoelectric oscillator, or a method of manufacturing a piezoelectric oscillator including the integrated circuit element and the electronic component element,
A rectangular oscillator substrate region in which a first space portion is formed on the front main surface and a second space portion is formed on the back main surface, and an integration mounted in the second space portion on the outer peripheral side surface of the oscillator substrate region Forming an abbreviated area having a characteristic control data writing terminal electrically connected to the circuit element and a characteristic measuring terminal electrically connected to the piezoelectric vibration element mounted in the first space; A step A for forming a mother substrate in which a plurality of the oscillator substrate regions formed on the outer periphery are arranged in a matrix and configured integrally;
A piezoelectric vibration element is mounted in the first space portion formed on the front main surface of each oscillator substrate region of the mother substrate, and a lid is disposed so as to close the opening of each first space portion. Then, after hermetically sealing the first space portion, measuring the characteristics of the piezoelectric vibration element from the characteristic measurement terminal, and determining whether the characteristic value is good or not,
An integrated circuit element that is electrically connected to the piezoelectric vibration element in the second space formed on the back main surface of the oscillator substrate region on which the piezoelectric vibration element determined to have good characteristics in the step B is mounted. Alternatively, after the integrated circuit element and the electronic element are mounted, the oscillation characteristic control data is input to the integrated circuit element from the characteristic control data write terminal, and the oscillation characteristic control data is stored in the memory in the integrated circuit element. C
Cutting the mother board along the outer periphery of each of the oscillator substrate areas, the characteristic control data writing terminal electrically connecting each of the oscillator board areas to each electronic element mounted in the oscillation device board area; And a step D of obtaining a plurality of piezoelectric oscillators simultaneously by separating from each of the abandoned regions provided with the characteristic measurement terminals.

また本発明の温度補償型水晶発振器の製造方法は、前記工程Cにおいて、該母基板を形成する各該発振器基板領域に該集積回路素子を搭載することによって、該捨代領域に形成されている該特性制御データ書込端子と該集積回路素子とが、発振器基板領域及び該母基板の表面又は/及び内部に形成した配線導体を介して電気的に接続されることを特徴とする前項に記載の圧電発振器の製造方法でもある。   The temperature compensated crystal oscillator manufacturing method of the present invention is formed in the abandoned region by mounting the integrated circuit element in each oscillator substrate region forming the mother substrate in the step C. The characteristic control data write terminal and the integrated circuit element are electrically connected to each other through a wiring conductor formed on the surface of the oscillator substrate region and / or the mother substrate and / or inside thereof. It is also a manufacturing method of the piezoelectric oscillator.

本発明によれば、特性制御データを集積回路素子に書き込むのに使用される特性制御データ書込端子及び圧電振動素子の諸特性を測定する為の特性測定端子を母基板の捨代領域に設けておき、圧電振動素子の特性の良否判定及び特性制御データの書き込みを完了した後で切り離すようにしたことから、基板領域内に特性制御データ書込端子及び特性測定端子を配置させるための広いスペースは不要となり、圧電発振器の全体構造を小型化することができる。   According to the present invention, the characteristic control data writing terminal used for writing the characteristic control data to the integrated circuit element and the characteristic measuring terminal for measuring various characteristics of the piezoelectric vibration element are provided in the abandoned area of the mother board. In addition, since the separation is completed after the determination of the quality of the piezoelectric vibration element and the writing of the characteristic control data are completed, a wide space for arranging the characteristic control data writing terminal and the characteristic measuring terminal in the substrate region Becomes unnecessary, and the entire structure of the piezoelectric oscillator can be reduced in size.

また、同様に特性測定端子を母基板の捨代領域に設けておき、圧電振動素子の電気的特性を測定後、切り離すようにしたことから、面積を一定以上確保できるので、圧電振動素子の測定を容易にすることができる。しかもこの場合、圧電発振器の製造プロセスは比較的簡素となる上に、個々の圧電発振器に特性制御データを書き込むためのソケット等の設備は一切不要であり、これによって圧電発振器の生産性を高く維持することもできる。   Similarly, since characteristic measurement terminals are provided in the abandoned area of the mother board and the electrical characteristics of the piezoelectric vibration element are measured and then separated, the area can be secured above a certain level. Can be made easier. Moreover, in this case, the manufacturing process of the piezoelectric oscillator is relatively simple, and no equipment such as a socket for writing the characteristic control data to each piezoelectric oscillator is required, thereby maintaining high productivity of the piezoelectric oscillator. You can also

また本発明の製造方法によって得られる圧電発振器には、上述した如く特性制御データ書込端子が存在していないことから、圧電発振器をマザーボード等の外部電気回路に搭載する際、両者の接合に用いられている導電性接合材の一部が特性制御データ書込端子に付着してショートを起こすといった不都合を発生することはなく、製品の取り扱いを簡便になすことができる。   In addition, since the piezoelectric oscillator obtained by the manufacturing method of the present invention does not have the characteristic control data writing terminal as described above, when the piezoelectric oscillator is mounted on an external electric circuit such as a mother board, it is used for joining the two. There is no inconvenience that a part of the conductive bonding material is attached to the characteristic control data writing terminal to cause a short circuit, and the product can be handled easily.

また本発明の場合、前記母基板は集積回路素子を搭載した後で分割されるようになっており、集積回路素子の搭載時、母基板自体が集積回路素子搭載用のキャリアとして機能することから、従来例の項で説明したような集積回路素子搭載用のキャリアは不要であり、母基板の分割によって得られた個々の子基板をキャリアに搭載するといった煩雑な作業も一切不要となる。これによっても、圧電発振器の生産性が向上されるようになる。   In the case of the present invention, the mother board is divided after the integrated circuit element is mounted, and when the integrated circuit element is mounted, the mother board itself functions as a carrier for mounting the integrated circuit element. The carrier for mounting an integrated circuit element as described in the section of the conventional example is unnecessary, and the complicated work of mounting individual child boards obtained by dividing the mother board on the carrier is not required at all. This also improves the productivity of the piezoelectric oscillator.

以下、本発明を添付図面に基づいて詳細に説明する。
図1は本発明の製造方法によって製作された圧電発振器の一つである温度補償型水晶発振器の斜視図、図2は図1に図示した温度補償型水晶発振器を切断線A1−A2で切断した場合の断面図、図3の(a)は本発明の製造方法で使用される母基板及び蓋板を水晶振動素子を搭載する表主面側より見た斜視図であり、(b)は(a)に図示した母基板の一部(一つの発振器基板領域及びそれに対する捨代領域)を拡大した拡大斜視図である。また、図4の(a)は、図3(a)に図示した母基板を集積回路素子等を搭載する裏主面側よりみた斜視図であり、(b)は(a)に図示した母基板の一部(一つの発振器基板領域及びそれに対する捨代領域)を拡大した拡大斜視図である。尚、図1乃至4にあって、説明を明りょうにするため構造体の一部を図示せず、また寸法も一部誇張して図示している。特に各部分の厚さ寸法は、本発明を理解し易くするためにデフォルメした形で現している。
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a perspective view of a temperature-compensated crystal oscillator that is one of the piezoelectric oscillators manufactured by the manufacturing method of the present invention, and FIG. 2 is a sectional view of the temperature-compensated crystal oscillator shown in FIG. FIG. 3A is a perspective view of the mother board and the cover plate used in the manufacturing method of the present invention as viewed from the front main surface side on which the crystal resonator element is mounted, and FIG. It is the expansion perspective view which expanded a part (one oscillator board | substrate area | region and the surplus area | region with respect to it) of the mother board | substrate shown in a). 4A is a perspective view of the mother board shown in FIG. 3A as viewed from the back main surface side on which the integrated circuit elements and the like are mounted, and FIG. 4B is a mother board shown in FIG. It is the expansion perspective view which expanded a part of substrate (one oscillator board | substrate area | region and the surplus area | region with respect to it). In FIG. 1 to FIG. 4, a part of the structure is not shown and the dimensions are partly exaggerated for the sake of clarity. In particular, the thickness dimension of each part is shown in a deformed form for easy understanding of the present invention.

これらの図に示す温度補償型水晶発振器は、容器体1の上面内部に圧電素子である水晶振動素子5を収容し、前記容器体1の下面内部に集積回路素子7とを取着させた構造を有している。前記容器体1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成る基板2と、42アロイやコバール,リン青銅等の金属から成るシールリング3と、シールリング3と同様の金属から成る蓋体4とから成り、前記基板2の上面にシールリング3を取着させ、その上面に蓋体4を載置・固定させることによって容器体1が構成され、シールリング3の内側に位置する基板2の上面に水晶振動素子5が実装される。   The temperature-compensated crystal oscillator shown in these drawings has a structure in which a crystal vibrating element 5 that is a piezoelectric element is accommodated in the upper surface of a container body 1 and an integrated circuit element 7 is attached to the lower surface of the container body 1. have. The container body 1 is made of, for example, a substrate 2 made of a ceramic material such as glass-ceramic or alumina ceramic, a seal ring 3 made of a metal such as 42 alloy, Kovar, or phosphor bronze, and a metal similar to the seal ring 3. The container body 1 is formed by attaching the seal ring 3 to the upper surface of the substrate 2 and placing and fixing the cover body 4 on the upper surface of the substrate 2, and is located inside the seal ring 3. A crystal resonator element 5 is mounted on the upper surface of the substrate 2.

前記容器体1は、その内部、具体的には、基板2の上面とシールリング3の内面と蓋体4の下面とで囲まれる空間内に水晶振動素子5を収容して気密封止するためのものであり、基板2の上面には水晶振動素子5の振動電極に接続される一対の搭載パッド8a等が、基板2の下面には集積回路素子7の接続パッド7aに接続される複数個の電極パッド8b等がそれぞれ設けられ、これらのパッドは基板表面の配線パターンや基板内部に埋設されているビアホール導体等によって、対応するパッド同士、相互に電気的に接続されている。   The container body 1 is for hermetically sealing the quartz resonator element 5 in its interior, specifically, in a space surrounded by the upper surface of the substrate 2, the inner surface of the seal ring 3, and the lower surface of the lid body 4. A pair of mounting pads 8a connected to the vibration electrodes of the crystal resonator element 5 are provided on the upper surface of the substrate 2, and a plurality of pads are connected to the connection pads 7a of the integrated circuit element 7 on the lower surface of the substrate 2. The electrode pads 8b and the like are respectively provided, and these pads are electrically connected to each other by a wiring pattern on the surface of the substrate, a via-hole conductor embedded in the substrate, or the like.

一方、前記容器体1の内部に収容される水晶振動素子5は、所定の結晶軸でカットした水晶片の両主面に一対の振動電極を被着・形成してなり、外部からの変動電圧が一対の振動電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こす。   On the other hand, the quartz crystal vibrating element 5 accommodated in the container body 1 is formed by attaching and forming a pair of vibrating electrodes on both main surfaces of a crystal piece cut along a predetermined crystal axis, and a variable voltage from the outside. Is applied to the quartz piece via a pair of vibrating electrodes, thickness shear vibration is caused at a predetermined frequency.

ここで容器体1の金属製の蓋体4を容器体1の配線導体を介して後述するグランド端子用の外部端子9に接続させておけば、その使用時、蓋体4がアースされることによりシールド機能が付与されることとなるため、水晶振動素子5や後述する集積回路素子7を外部からの不要な電気的作用より良好に保護することができる。従って、容器体1の蓋体4は容器体1の配線導体8を介してグランド端子用の外部端子9aに接続させておくことが好ましい。そして、上述した容器体1の下面に取着される集積回路素子7は、集積回路素子7が囲繞されている壁部の中央部に位置するようにして並設されている。上述したグランド端子用外部端子9aを含む4個の外部端子9は、温度補償型水晶発振器をマザーボード等の外部電気回路に搭載する際、外部電気回路の回路配線と電気的に接続されるようになっている。   Here, if the metal lid 4 of the container body 1 is connected to the external terminal 9 for a ground terminal, which will be described later, via the wiring conductor of the container body 1, the lid body 4 is grounded during use. Since the shield function is given by the above, the crystal resonator element 5 and the integrated circuit element 7 described later can be protected better than the unnecessary electric action from the outside. Therefore, the lid body 4 of the container body 1 is preferably connected to the external terminal 9a for the ground terminal via the wiring conductor 8 of the container body 1. And the integrated circuit element 7 attached to the lower surface of the container 1 mentioned above is arranged in parallel so that it may be located in the center part of the wall part in which the integrated circuit element 7 is enclosed. The four external terminals 9 including the ground terminal external terminals 9a described above are electrically connected to the circuit wiring of the external electric circuit when the temperature-compensated crystal oscillator is mounted on an external electric circuit such as a mother board. It has become.

また一方、容器体1の下面に取着される集積回路素子7としては、上面に前記容器体1の電極パッド8bに接続される複数個の接続パッド7aを有した矩形状のフリップチップ型ICが用いられ、その回路形成面には、周囲の温度状態を検知する感温素子(サーミスタ)、水晶振動素子5の温度特性を制御補償する温度補償データを有し、この温度補償データに基づいて前記水晶振動素子5の振動特性を温度変化に応じて補正する温度補償回路、温度補償回路に接続されて所定の発振出力を生成する発振回路等が設けられている。このような集積回路素子7の発振回路で生成された発振出力は、外部に出力された後、例えば、クロック信号等の基準信号として利用されることとなる。   On the other hand, as the integrated circuit element 7 attached to the lower surface of the container body 1, a rectangular flip chip IC having a plurality of connection pads 7 a connected to the electrode pads 8 b of the container body 1 on the upper surface. The circuit forming surface has a temperature sensing element (thermistor) for detecting the ambient temperature state, and temperature compensation data for controlling and compensating the temperature characteristics of the crystal resonator element 5, and based on the temperature compensation data. A temperature compensation circuit that corrects the vibration characteristics of the crystal resonator element 5 according to a temperature change, an oscillation circuit that is connected to the temperature compensation circuit and generates a predetermined oscillation output, and the like are provided. The oscillation output generated by the oscillation circuit of the integrated circuit element 7 is output to the outside and then used as a reference signal such as a clock signal.

次に上述した温度補償型水晶発振器の製造方法について説明する。
(工程A)
まず、表主面に水晶振動素子を搭載する第1の空間部16a、及び裏主面に集積回路素子を搭載する第2の空間部16bを有する矩形状の発振器基板領域20の各4側面に、複数個の特性制御データ書込端子17及び測定端子18を有する捨代領域21を形成して、これらをマトリックス状に配置した母基板15を準備する。このような母基板15は、ガラス−セラミック等の低温焼成基板材料,アルミナセラミックス等のセラミック材料等によって形成されており、例えば800℃〜1200℃の比較的低い温度で焼成が可能なガラス−セラミック材料等から成る複数の誘電体層を積層することによって構成されており、各誘電体層に設けられたAg、Cu、W、Mo等の金属材料からなる導体がそれぞれ回路配線や接続パッドを形成している。尚、矩形状をなす配線基板を形成する各誘電体層の厚みは、例えば20μm〜300μmに設定される。また、母基板15には特性制御データ書込端子17や外部端子9等を含む所定の配線パターンが形成されている。
Next, a manufacturing method of the above-described temperature compensated crystal oscillator will be described.
(Process A)
First, on each of the four side surfaces of a rectangular oscillator substrate region 20 having a first space portion 16a on which the crystal resonator element is mounted on the front main surface and a second space portion 16b on which the integrated circuit element is mounted on the back main surface. Then, a spare area 21 having a plurality of characteristic control data write terminals 17 and measurement terminals 18 is formed, and a mother board 15 is prepared in which these are arranged in a matrix. Such a base substrate 15 is formed of a low-temperature fired substrate material such as glass-ceramic, a ceramic material such as alumina ceramic, and the like, and can be fired at a relatively low temperature of, for example, 800 ° C. to 1200 ° C. It is configured by laminating a plurality of dielectric layers made of materials, etc., and conductors made of metal materials such as Ag, Cu, W, and Mo provided on each dielectric layer form circuit wiring and connection pads, respectively. is doing. The thickness of each dielectric layer forming the rectangular wiring board is set to 20 μm to 300 μm, for example. A predetermined wiring pattern including the characteristic control data writing terminal 17 and the external terminal 9 is formed on the mother board 15.

また前記母基板15の発振器基板領域20に形成されている第1の空間部16a及び第2の空間部16bは矩形状であり、かつ発振器基板領域20を縦断するように形成されており、上述のようにして製作した母基板15の各発振器基板領域20をパンチング等で矩形状に打ち抜くことによって所定の第1の空間部16a及び第2の16bが穿設される。このような母基板15の裏主面側には、発振器基板領域20に複数個の外部端子9が、捨代領域21に複数個の特性制御データ書込端子17及び特性測定端子18がそれぞれ設けられている。   The first space portion 16a and the second space portion 16b formed in the oscillator substrate region 20 of the mother substrate 15 have a rectangular shape and are formed so as to cut the oscillator substrate region 20 vertically. The predetermined first space 16a and second 16b are formed by punching each oscillator substrate region 20 of the mother substrate 15 manufactured as described above into a rectangular shape by punching or the like. On the back main surface side of the mother board 15, a plurality of external terminals 9 are provided in the oscillator board area 20, and a plurality of characteristic control data writing terminals 17 and characteristic measuring terminals 18 are provided in the spare area 21. It has been.

(工程B)
次に、前記母基板15の各発振器基板領域20の上面に水晶振動素子5が収容し、蓋板12を複数の第1の空間部16aを塞ぐようにして取着させ、しかる後、母基板15の捨代領域21に設けた複数個の特性測定端子18を介して各第1の空間部16a内の水晶振動素子5の電気的特性を測定する。前記容器体1は、先に述べたように、基板2とシールリング3と蓋体4とで構成されており、その内部の第1の空間部16aに水晶振動素子5を収容させている。
(Process B)
Next, the crystal resonator element 5 is accommodated on the upper surface of each oscillator substrate region 20 of the mother substrate 15, and the cover plate 12 is attached so as to close the plurality of first spaces 16a. The electrical characteristics of the crystal resonator element 5 in each first space portion 16a are measured via a plurality of characteristic measurement terminals 18 provided in the 15 surplus areas 21. As described above, the container body 1 is composed of the substrate 2, the seal ring 3, and the lid body 4, and the crystal resonator element 5 is accommodated in the first space portion 16a therein.

例えば、基板2をセラミック材料により形成する場合は、セラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に配線導体となる導体ペーストを所定パターンに印刷・塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することによって基板2を製作し、得られた基板2の上面に水晶振動素子5を搭載する。このとき、水晶振動素子5の振動電極と基板上面の搭載パッド8aとは導電性接合材10を介して電気的・機械的に接続される。そして、基板2の上面に、水晶振動素子5を囲繞するようにしてシールリング3を載置・固定し、かかるシールリング3の上面に蓋体4を従来周知の抵抗溶接等によって接合することにより容器体1が組み立てられる。   For example, when the substrate 2 is formed of a ceramic material, a conductive paste serving as a wiring conductor is printed and applied in a predetermined pattern on the surface of a ceramic green sheet obtained by adding and mixing an appropriate organic solvent to the ceramic material powder. At the same time, after stacking a plurality of the substrates and press-molding them, the substrate 2 is manufactured by firing at a high temperature, and the crystal resonator element 5 is mounted on the upper surface of the obtained substrate 2. At this time, the vibration electrode of the crystal resonator element 5 and the mounting pad 8 a on the upper surface of the substrate are electrically and mechanically connected via the conductive bonding material 10. Then, the seal ring 3 is placed and fixed on the upper surface of the substrate 2 so as to surround the crystal resonator element 5, and the lid body 4 is joined to the upper surface of the seal ring 3 by conventionally known resistance welding or the like. The container body 1 is assembled.

尚、シールリング3及び蓋体4は、従来周知の金属加工法を採用し、42アロイ等の金属を所定形状に成形することによって製作され、前記シールリング3は、基板2の上面に予め被着させておいた導体層にロウ付けすることによって基板2に固定される。また上述のように、シールリング3と蓋体4とを抵抗溶接によって接合する場合、シールリング3や蓋体4の表面には予めNiメッキ層やAuメッキ層等が被着される。   The seal ring 3 and the lid 4 are manufactured by forming a metal such as 42 alloy into a predetermined shape using a conventionally known metal processing method, and the seal ring 3 is applied to the upper surface of the substrate 2 in advance. It is fixed to the substrate 2 by brazing to the conductor layer that has been applied. Further, as described above, when the seal ring 3 and the lid 4 are joined by resistance welding, a Ni plating layer, an Au plating layer, or the like is previously deposited on the surfaces of the seal ring 3 and the lid 4.

(工程C)
母基板15を上下に裏返し、前記第2の空間部16bの内側底面に集積回路素子7を搭載する。次に、母基板15の捨代領域21に設けた複数個の特性制御データ書込端子17を介して各発振器基板領域20内の集積回路素子7に特性制御データである温度補償データを入力し、集積回路素子7内のメモリにその温度補償データを格納する。また一方、前記集積回路素子7としては、先に述べたように、容器体1の第2の空間部16bの内側底面に形成した電極パッド8bと対向する位置に複数個の接続パッド7aを有した矩形状のフリップチップ型ICが用いられる。
(Process C)
The mother board 15 is turned upside down, and the integrated circuit element 7 is mounted on the inner bottom surface of the second space 16b. Next, temperature compensation data, which is characteristic control data, is input to the integrated circuit element 7 in each oscillator substrate area 20 via a plurality of characteristic control data write terminals 17 provided in the abandoned area 21 of the mother board 15. The temperature compensation data is stored in the memory in the integrated circuit element 7. On the other hand, as described above, the integrated circuit element 7 has a plurality of connection pads 7 a at positions facing the electrode pads 8 b formed on the inner bottom surface of the second space portion 16 b of the container body 1. A rectangular flip chip type IC is used.

前記集積回路素子7は、その一面に設けられている複数個の接続パッド7aが、母基板15の裏主面側で第2の空間部16b内に露出する電極パッド8bに半田又は金属バンプなどのの導電性接合材11を介して当接されるようにして容器体1上に載置され、しかる後、前記導電性接合材11を熱の印加等によって溶融させ、接合パッド7a及び電極パッド8bを導電性接合材11を介して接合することによって集積回路素子7が容器体1に搭載される。   In the integrated circuit element 7, a plurality of connection pads 7a provided on one surface thereof are soldered or metal bumps or the like on the electrode pads 8b exposed in the second space portion 16b on the back main surface side of the mother board 15. The conductive bonding material 11 is placed on the container body 1 so as to be in contact with the conductive bonding material 11, and then the conductive bonding material 11 is melted by application of heat or the like, so that the bonding pad 7 a and the electrode pad are melted. The integrated circuit element 7 is mounted on the container body 1 by bonding 8b via the conductive bonding material 11.

かかる工程Cにおいては、各々の第2の空間部16bに集積回路素子7を搭載することによって、集積回路素子7内の電子回路が母基板15内に形成された配線導体等を介して水晶振動素子5や外部端子9等と電気的に接続され、また同時に、捨代領域20の特性制御データ書込端子17と集積回路素子7とが母基板15に形成された配線導体を介して対応する素子又は端子間同士が電気的に接続されることとなる。   In the process C, the integrated circuit element 7 is mounted in each of the second space portions 16b, whereby the electronic circuit in the integrated circuit element 7 is vibrated through the wiring conductor formed in the mother board 15 or the like. At the same time, the characteristic control data writing terminal 17 and the integrated circuit element 7 in the abandoned region 20 correspond to each other through a wiring conductor formed on the mother board 15. Elements or terminals are electrically connected to each other.

ここで、母基板15と集積回路素子7とは導電性接合材11を介して接合されており、両者の非接合部には所定の隙間が存在しているため、集積回路素子7を半田や金属バンプ等の導電性接合材11を介して第2の空間部16bの内部底面に搭載する際、この接合に必要な熱を上述の隙間等から容器体1−集積回路素子7間の導電性接合材11に対して良好に伝達させることができ、集積回路素子7を効率良く、確実に搭載することが可能となる。これにより、温度補償型水晶発振器の信頼性及び生産性を向上させることができる。   Here, since the mother board 15 and the integrated circuit element 7 are bonded via the conductive bonding material 11 and there is a predetermined gap in the non-bonded portion between them, the integrated circuit element 7 is soldered. When mounting on the inner bottom surface of the second space portion 16b via the conductive bonding material 11 such as a metal bump, the heat necessary for this bonding is transferred between the container body 1 and the integrated circuit element 7 from the above-described gap or the like. Therefore, the integrated circuit element 7 can be mounted efficiently and reliably. Thereby, the reliability and productivity of the temperature compensated crystal oscillator can be improved.

このような温度補償データの書込作業は、温度補償データ書込装置(図示しない)のプローブ針を特性制御データ書込端子17に当てて、水晶振動素子5の温度特性に応じて作成された温度補償データを集積回路素子7の温度補償回路内に設けられているメモリに入力し、これを記憶させることによって行なわれる。尚、ここで集積回路素子7に書き込まれる温度補償データは、水晶振動素子5毎の温度特性バラツキを補正するためのものであり、その温度補償型水晶発振器に使用される水晶振動素子5の温度特性を事前に測定しておくことにより得られるものである。この場合、個々の温度補償型水晶発振器の集積回路素子7に温度補償データを書き込むためのソケット等の設備は一切不要であり、これによっても温度補償型水晶発振器の生産性向上に供することができる。   The temperature compensation data writing operation is created according to the temperature characteristics of the crystal resonator element 5 by placing the probe needle of the temperature compensation data writing device (not shown) on the characteristic control data writing terminal 17. This is done by inputting the temperature compensation data into a memory provided in the temperature compensation circuit of the integrated circuit element 7 and storing it. Here, the temperature compensation data written to the integrated circuit element 7 is for correcting the temperature characteristic variation for each crystal oscillation element 5, and the temperature of the crystal oscillation element 5 used in the temperature compensated crystal oscillator. It is obtained by measuring the characteristics in advance. In this case, there is no need for any equipment such as a socket for writing temperature compensation data in the integrated circuit element 7 of each temperature compensation crystal oscillator, which can also be used to improve the productivity of the temperature compensation crystal oscillator. .

(工程D)
そして最後に、前記母基板15を各々の発振器基板領域20の外周に沿って切断することにより、各発振器基板領域20をその周囲に形成されている捨代領域21より切り離す。前記母基板15の切断は従来周知のダイシング等によって行なわれ、かかる切断工程を経て母基板15が個々の発振器基板領域毎に分割される。これにより、個々に集積回路素子7を搭載してなる複数個の温度補償型水晶発振器が同時に得られる。
(Process D)
Finally, the mother substrate 15 is cut along the outer periphery of each oscillator substrate region 20 to separate each oscillator substrate region 20 from the abandoned region 21 formed around the periphery. The mother substrate 15 is cut by conventionally known dicing or the like, and the mother substrate 15 is divided into individual oscillator substrate regions through the cutting process. As a result, a plurality of temperature compensated crystal oscillators each having the integrated circuit element 7 mounted thereon can be obtained simultaneously.

またこの場合、母基板15は集積回路素子7を搭載した後で分割されるようになっており、集積回路素子7の搭載時、母基板15自体が集積回路素子搭載用のキャリアとして機能することから、従来例の項で説明したような集積回路素子搭載用のキャリアは不要であり、母基板15の分割によって得られた個々の小片の基板をキャリアに搭載するといった煩雑な作業も一切不要となる。これによっても、温度補償型水晶発振器の生産性が向上されるようになる。   In this case, the mother board 15 is divided after the integrated circuit element 7 is mounted. When the integrated circuit element 7 is mounted, the mother board 15 itself functions as a carrier for mounting the integrated circuit element. Therefore, there is no need for a carrier for mounting an integrated circuit element as described in the section of the conventional example, and there is no need for complicated operations such as mounting individual small pieces of substrates obtained by dividing the mother board 15 on the carrier. Become. This also improves the productivity of the temperature compensated crystal oscillator.

そして、上述した製造工程においては、特性制御データ書込端子17及び特性測定端子18を母基板15の捨代領域21に設けておき、温度補償データの書き込みを完了した後並びに水晶振動素子5の電気的特性を測定した後で切り離すようにしたことから、特性制御データ書込端子17や特性測定端子18を第2の空間部16bの内部面上に配置させるための広いスペースは不要となり、温度補償型水晶発振器の全体構造を小型化することができる。   In the manufacturing process described above, the characteristic control data write terminal 17 and the characteristic measurement terminal 18 are provided in the abandoned region 21 of the mother board 15 and after the temperature compensation data has been written, the crystal vibration element 5 Since the electrical characteristics are measured and then disconnected, a large space for disposing the characteristic control data writing terminal 17 and the characteristic measuring terminal 18 on the inner surface of the second space portion 16b is not necessary, and the temperature The overall structure of the compensation type crystal oscillator can be reduced in size.

また、上述の工程A〜Dを経て得られる最終製品の温度補償型水晶発振器には、特性制御データ書込端子17が存在していないことから、温度補償型水晶発振器をマザーボード等の外部電気回路に搭載する際、両者の接合に用いられている導電性接合材の一部が特性制御データ書込端子に付着してショートを起こすといった不都合を発生することもなく、製品の取り扱いを簡便になすことができる。   In addition, since the temperature compensated crystal oscillator of the final product obtained through the above-described steps A to D does not have the characteristic control data write terminal 17, the temperature compensated crystal oscillator is connected to an external electric circuit such as a motherboard. When mounted on the product, it is easy to handle the product without causing the inconvenience that a part of the conductive bonding material used to bond the two adheres to the characteristic control data writing terminal and causes a short circuit. be able to.

尚、本発明は上述の実施形態及び実施例に限定されるものではなく、例えば集積回路素子に入力する特性制御データは温度特性データに、また、搭載する圧電素子を水晶振動素子に限定するものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。   The present invention is not limited to the above-described embodiments and examples. For example, the characteristic control data input to the integrated circuit element is limited to the temperature characteristic data, and the mounted piezoelectric element is limited to the crystal vibration element. Instead, various modifications and improvements can be made without departing from the scope of the present invention.

また、上述した実施形態においては、捨代領域21の特性制御データ書込端子17及び測定端子18を外部端子9の配列に沿って平行に配置させるようにしたが、これに代えて、捨代領域21の特性制御データ書込端子17及び特性測定端子18を外部端子9の配列と直交する方向に配置させるようにしても構わない。   Further, in the above-described embodiment, the characteristic control data writing terminal 17 and the measurement terminal 18 in the separation area 21 are arranged in parallel along the array of the external terminals 9. The characteristic control data write terminal 17 and the characteristic measurement terminal 18 in the area 21 may be arranged in a direction orthogonal to the arrangement of the external terminals 9.

また更に上述した実施形態においては、容器体1の蓋体4をシールリング3を介して基板2に接合させるようにしたが、これに代えて、基板2の上面に接合用のメタライズパターンを形成しておき、このメタライズパターンに対して蓋体4をダイレクトに溶接するようにしても構わない。   Furthermore, in the above-described embodiment, the lid 4 of the container body 1 is bonded to the substrate 2 via the seal ring 3. Instead, a metallized pattern for bonding is formed on the upper surface of the substrate 2. In addition, the lid 4 may be directly welded to the metallized pattern.

図1は本発明の製造方法によって製作した温度補償型水晶発振器の斜視図である。FIG. 1 is a perspective view of a temperature compensated crystal oscillator manufactured by the manufacturing method of the present invention. 図2は図1に図示した温度補償型水晶発振器の断面図である。FIG. 2 is a sectional view of the temperature compensated crystal oscillator shown in FIG. 図3において、(a)は本発明の製造方法で使用される母基板及び蓋板を水晶振動素子を搭載する表主面側より見た斜視図であり、(b)は(a)に図示した母基板の一部(一つの発振器基板領域及びそれに対する捨代領域)を拡大した部分拡大斜視図である。3, (a) is a perspective view of the mother board and the cover plate used in the manufacturing method of the present invention as seen from the front main surface side on which the crystal resonator element is mounted, and (b) is shown in (a). It is the elements on larger scale which expanded a part (one oscillator board | substrate area | region and the surplus area | region with respect to it) of the mother board which carried out. 図4において、(a)は、図3(a)に図示した母基板を集積回路素子等を搭載する裏主面側よりみた斜視図であり、(b)は(a)に図示した母基板の一部(一つの発振器基板領域及びそれに対する捨代領域)を拡大した部分拡大斜視図である。4A is a perspective view of the mother board shown in FIG. 3A as viewed from the back main surface side on which the integrated circuit elements and the like are mounted, and FIG. 4B is a mother board shown in FIG. It is the elements on larger scale which expanded a part (one oscillator board | substrate area | region and the surplus area | region with respect to it). 図5は従来の製造方法によって製作した温度補償型水晶発振器の断面図。FIG. 5 is a cross-sectional view of a temperature compensated crystal oscillator manufactured by a conventional manufacturing method.

符号の説明Explanation of symbols

2・・・基板
3・・・シールリング
4・・・蓋体
5・・・水晶振動素子
7・・・集積回路素子
15・・・母基板
16a・・第1の空間部
16b・・第2の空間部
17・・・特性制御データ書込端子
18・・・特性測定端子
20・・・発振器基板領域
21・・・捨代領域
DESCRIPTION OF SYMBOLS 2 ... Board | substrate 3 ... Seal ring 4 ... Lid body 5 ... Quartz vibration element 7 ... Integrated circuit element 15 ... Mother board 16a ... 1st space part 16b ... 2nd 17 ... Characteristic control data writing terminal 18 ... Characteristic measurement terminal 20 ... Oscillator substrate area 21 ... Disposal area

Claims (2)

絶縁性の基板の表主面に凹形状の第1の空間部と、該基板の裏主面に凹形状の第2の空間部とを形成し、該第1の空間部に圧電振動素子を搭載し蓋体を該第1の空間部開口部に被せて第1の空間部を気密封止し、該第2の空間部には、該圧電振動素子と電気的に接続する発振回路を組み込んだ集積回路素子、或いは該集積回路素子及び電子部品素子を搭載した圧電発振器の製造方法において、
表主面に第1の空間部と、裏主面に第2の空間部とを形成した矩形状の発振器基板領域と、該発振器基板領域の外周側面に該第2の空間部内に搭載する集積回路素子に電気的接続した特性制御データ書込端子と、第1の空間部内に搭載する圧電振動素子と電気的接続した特性測定端子とを設けた捨代領域を形成し、該捨代領域を外周に形成した該発振器基板領域が複数個マトリックスに配列されて一体に構成されている母基板を形成する工程Aと、
該母基板の各々の発振器基板領域の表主面に形成した該第1の空間部に、圧電振動素子を搭載し、各々の該第1の空間部の開口部を塞ぐように蓋体を配置し該第1の空間部を気密封止した後、該特性測定端子より圧電振動素子の特性を測定し、その特性値の良否を判定する工程Bと、
該工程Bにおいて特性が良と判定された圧電振動素子が搭載されている発振器基板領域の裏主面に形成した該第2の空間部に、該圧電振動素子と電気的に接続する集積回路素子、或いは該集積回路素子及び電子素子を搭載した後、該特性制御データ書込端子より集積回路素子に発振特性制御データを入力し、該集積回路素子内のメモリに発振特性制御データを格納する工程Cと、
該母基板を各々の該発振器基板領域の外周に沿って切断し、各該発振器基板領域をその発振機器板領域内に搭載した各電子素子と電気的に接続した該特性制御データ書込端子及び該特性測定端子が設けられている各該捨代領域から切り離し、複数個の圧電発振器を同時に得る工程Dと
を具備することを特徴とする圧電発振器の製造方法。
A concave first space portion is formed on the front main surface of the insulating substrate, and a concave second space portion is formed on the back main surface of the substrate, and a piezoelectric vibration element is formed in the first space portion. The first space portion is hermetically sealed by mounting and covering the first space portion opening, and an oscillation circuit that is electrically connected to the piezoelectric vibration element is incorporated in the second space portion. In the manufacturing method of the piezoelectric oscillator on which the integrated circuit element or the integrated circuit element and the electronic component element are mounted,
A rectangular oscillator substrate region in which a first space portion is formed on the front main surface and a second space portion is formed on the back main surface, and an integration mounted in the second space portion on the outer peripheral side surface of the oscillator substrate region Forming an abbreviated area having a characteristic control data writing terminal electrically connected to the circuit element and a characteristic measuring terminal electrically connected to the piezoelectric vibration element mounted in the first space; A step A for forming a mother substrate in which a plurality of the oscillator substrate regions formed on the outer periphery are arranged in a matrix and configured integrally;
A piezoelectric vibration element is mounted in the first space portion formed on the front main surface of each oscillator substrate region of the mother substrate, and a lid is disposed so as to close the opening of each first space portion. Then, after hermetically sealing the first space portion, measuring the characteristics of the piezoelectric vibration element from the characteristic measurement terminal, and determining whether the characteristic value is good or not,
An integrated circuit element electrically connected to the piezoelectric vibration element in the second space formed on the back main surface of the oscillator substrate region on which the piezoelectric vibration element determined to have good characteristics in Step B is mounted Alternatively, after the integrated circuit element and the electronic element are mounted, the oscillation characteristic control data is input to the integrated circuit element from the characteristic control data writing terminal, and the oscillation characteristic control data is stored in the memory in the integrated circuit element. C
Cutting the mother board along the outer periphery of each of the oscillator substrate regions, and the characteristic control data writing terminal electrically connecting each of the oscillator substrate regions to each electronic element mounted in the oscillation device plate region; And a step D of obtaining a plurality of piezoelectric oscillators simultaneously by separating from each of the abandoned regions provided with the characteristic measurement terminals.
前記工程Cにおいて、該母基板を形成する各該発振器基板領域に該集積回路素子を搭載することによって、該捨代領域に形成されている該特性制御データ書込端子と該集積回路素子とが、発振器基板領域及び該母基板の表面又は/及び内部に形成した配線導体を介して電気的に接続されることを特徴とする請求項1に記載の圧電発振器の製造方法。   In the step C, by mounting the integrated circuit element on each of the oscillator substrate regions forming the mother substrate, the characteristic control data writing terminal and the integrated circuit element formed in the surplus region are 2. The method of manufacturing a piezoelectric oscillator according to claim 1, wherein the piezoelectric oscillator is electrically connected via an oscillator substrate region and a wiring conductor formed on a surface and / or inside of the mother substrate.
JP2004194442A 2004-06-30 2004-06-30 Method for manufacturing piezoelectric oscillator Expired - Fee Related JP4472445B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078791A (en) * 2006-09-19 2008-04-03 Nippon Dempa Kogyo Co Ltd Surface mounting crystal oscillator
JP2008301260A (en) * 2007-05-31 2008-12-11 Kyocera Kinseki Corp Method of manufacturing piezoelectric oscillator
JP2009016957A (en) * 2007-06-29 2009-01-22 Kyocera Kinseki Corp Piezoelectric oscillator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078791A (en) * 2006-09-19 2008-04-03 Nippon Dempa Kogyo Co Ltd Surface mounting crystal oscillator
JP2008301260A (en) * 2007-05-31 2008-12-11 Kyocera Kinseki Corp Method of manufacturing piezoelectric oscillator
JP2009016957A (en) * 2007-06-29 2009-01-22 Kyocera Kinseki Corp Piezoelectric oscillator

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