JP2006016627A - Vacuum vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum vapor deposition apparatus having the function of preventing deposits on a back side of a shutter plate from being dropped in a crucible and from staining raw material for vapor deposition in the crucible during the gradual cooling after a degassing work and a vapor deposition work. <P>SOLUTION: The vacuum vapor deposition apparatus 101 comprises a vacuum chamber 2, a vacuum pump 3, a substrate holder 5 to hold a semi-conductor substrate 4, a crucible 7 to store raw material 6 for vapor deposition, an electron beam gun 9 as a heating means, a condensing coil 10 and a deflecting coil 11, a shutter plate 102 which emits or blocks vapor deposition flow 12 from the raw material 6 for vapor deposition and consists of a material of the kind similar to that of the raw material 6 for vapor deposition, which is characterized according to the present invention, a shutter plate driving unit 14 to move the position of the shutter plate 102, a film thickness monitor 15 to measure the film deposition rate, and a power control unit 16 to control the power of the electron beam gun 9. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vacuum vapor deposition apparatus for forming a film by heating and melting a vapor deposition raw material in vacuum and depositing it on the surface of a substrate to be processed.

  A longitudinal sectional view of an example of a conventional vacuum deposition apparatus is shown in FIG.

  A conventional vacuum deposition apparatus 1 includes a vacuum chamber 2 capable of maintaining the inside thereof in a vacuum state, a vacuum pump 3 that exhausts the inside of the vacuum chamber 2 to a vacuum, and a vacuum chamber 2 that serves as a substrate to be processed. For example, a substrate holder 5 that holds the semiconductor substrate 4, a crucible 7 that is disposed opposite to the substrate holder 5 and accommodates the vapor deposition raw material 6, and an electron beam 8 as a heating means for heating and melting the vapor deposition raw material 6 to evaporate it. (A broken line arrow in the figure), a focusing coil 10 and a deflection coil 11 for applying a magnetic force for focusing and deflecting the electron beam 8, and a deposition flow 12 from the deposition material 6 (solid arrow in the figure) A shutter plate 13 that releases and blocks the light, a shutter plate drive unit 14 that moves the position of the shutter plate 13, and a film that is disposed in the vicinity of the semiconductor substrate 4 and that measures the film formation rate A monitor 15, and a power control unit 16 for controlling the power of the electron gun 9 based on a signal from the film thickness monitor 15.

  Here, the shutter plate 13 is moved above the vapor deposition raw material 6 by the shutter plate driving unit 14 to block the vapor deposition flow 12, or retracted from above the vapor deposition raw material 6 to a predetermined standby position to cause the vapor deposition flow 12 to flow. It can be released. In FIG. 8, the shutter plate 13 is in the retracted position, and shows a vapor deposition discharge state.

  Next, operation | movement of the vacuum evaporation system 1 is demonstrated. First, the semiconductor substrate 4 is held on the substrate holder 5 and the vacuum pump 3 is operated to reduce the pressure in the vacuum chamber 2 to a desired degree of vacuum.

  Next, an electron beam 8 is emitted from the electron gun 9 and controlled by the focusing coil 10 and the deflection coil 11 to irradiate the surface of the vapor deposition raw material 6 substantially perpendicularly, and the vapor deposition raw material 6 is heated and melted to be evaporated.

  Here, before performing the vapor deposition operation on the semiconductor substrate 4, a so-called gas out operation is performed for the purpose of evaporating impurities on the surface of the vapor deposition raw material 6 and making the surface state uniform. As shown in FIG. 9, this gas discharge operation is performed by moving the shutter plate 13 above the vapor deposition material 6 and shutting the vapor deposition flow 12. For this reason, the vapor deposition flow 12 is radiated on the surface of the shutter plate 13 on the vapor deposition material side (hereinafter referred to as the rear surface of the shutter plate), and it is avoided that the same kind of deposits 17 as the vapor deposition material 6 are undesirably adhered. Absent.

  Thereafter, when the gas discharge operation is completed, as shown in FIG. 8, the shutter plate 13 is retracted to a predetermined standby position, the vapor deposition flow 12 is discharged toward the semiconductor substrate 4, and is monitored while being monitored by the film thickness monitor 15. The film is formed.

  Next, when the predetermined film formation on the semiconductor substrate 4 is completed, as shown in FIG. 9, the shutter plate 13 is moved again above the vapor deposition raw material 6 so that the vapor deposition flow 12 is cut off and the electron gun 9 is turned off. Reduce power gradually and stop. Also during this slow cooling, the vapor deposition flow 12 is radiated on the rear surface of the shutter plate, and it is inevitable that the deposit 17 of the same kind as the vapor deposition raw material 6 is undesirably adhered.

  In the above description, the heating method using the electron beam 8 has been described as the heating method for the vapor deposition material 6, but a heating method such as resistance heating or high-frequency heating may be used.

  Further, in the above description, the configuration in the case where the number of the vapor deposition raw materials 6 is one has been described. However, as another configuration, a plurality of crucibles that individually accommodate a plurality of types of vapor deposition raw materials are provided, and vapor deposition is performed from this. There exists a structure which deposits by moving the crucible containing the raw material to a predetermined heating position (electron beam irradiation position).

  An example of such a vacuum deposition apparatus is shown in FIGS. 10 is a longitudinal sectional view of the vacuum vapor deposition apparatus (deposition state of the vapor deposition flow), and FIG. 11 is a plan view of a crucible containing a plurality of types of vapor deposition raw materials individually. The same parts as those in FIGS. 8 and 9 are denoted by the same reference numerals.

  The vacuum deposition apparatus 20 having another conventional configuration includes, for example, four crucibles 7a to 7d arranged in a circle for individually accommodating four kinds of deposition raw materials 6a to 6d, and the rotation mechanism 21 performs deposition from here on. The vapor deposition material (deposition raw material 6a in the figure) to be moved is moved to the heating position (electron beam irradiation position) to perform the vapor deposition operation. And if the vapor deposition operation of one material type is completed, the vapor deposition raw material to be vapor deposited next is moved to the heating position and heated, whereby the vapor deposition operation of different material types can be performed continuously. At this time, other vapor deposition materials (6b, 6c, 6d) other than the heating position are masked with a shielding plate (not shown) so as not to be contaminated.

  Here, the conventional vacuum deposition apparatuses 1 and 20 as described above have the following problems in common. This is because the vapor deposition flow 12 is interrupted by the shutter plate 13 during the gas cooling operation or the slow cooling after the vapor deposition operation, so that the vapor deposition flow 12 is radiated to the rear surface of the shutter plate and is undesirably the same type as the vapor deposition raw material 6. It was that the deposit 17 adhered.

  Then, when a certain amount of the deposit 17 is deposited and falls into the crucible 7 or 7a to 7d due to its own weight or vibration of the rotation operation of the shutter plate 13, the internal vapor deposition raw materials 6 and 6a to 6d are contaminated. As a result, film formation quality may be reduced.

  This is because, for example, even when the deposition material 6 is one type and the deposition material 6 and the deposit 17 are the same material, the deposition material 17 receives the radiant heat from the molten deposition material 6 in the crucible 7. However, there is a risk that the material reacts with the material of the shutter plate 13 and falls as a compound to contaminate the vapor deposition raw material 6 in the crucible 7.

  In the case where there are a plurality of types of vapor deposition materials 6a to 6d, deposits 17 of various material types adhere to the rear surface of the shutter plate. The risk of contamination was great.

As shown in FIG. 12, an improved vacuum vapor deposition apparatus 30 having a plurality of shutter plates has been proposed against such deposition and dropping of the deposits 17. FIG. 12 is a longitudinal sectional view (deposition state of vapor deposition flow) of a vacuum vapor deposition apparatus provided with two shutter plates. According to such a vacuum deposition apparatus 30, since the two shutter plates 31 and 32 are switched and used in the middle of the film formation, the deposits 17 per one shutter plate are compared with the case where there is only one shutter plate. The amount of deposition can be reduced. (For example, refer to Patent Document 1).
JP 2003-155557 A

  However, even with the improved vacuum deposition apparatus 30 described above, since the two shutter plates 31 and 32 are switched and used during the film formation, the deposits per sheet are surely increased by the amount of increase in the shutter plates. However, the deposit 17 of an undesired material type still adhered to the rear surface of the shutter plate. In addition, the effect increases as the number of shutter plates increases, but after all, it only extends the life until a certain amount of deposit 17 is deposited. It was necessary to increase the number of sheets as much as possible.

  It is an object of the present invention to cause deposits of undesired material types adhering to the rear surface of the shutter plate to fall into the crucible during the gas cooling operation or the slow cooling after the vapor deposition operation, thereby contaminating the internal vapor deposition raw material. It is providing the vacuum evaporation system which has a function which can prevent.

The vacuum deposition apparatus of the present invention is
at least,
A vacuum chamber capable of maintaining the interior in a vacuum state;
A vacuum pump for evacuating the vacuum chamber;
A substrate holder disposed in a vacuum chamber and holding a substrate to be processed;
A crucible disposed opposite to the substrate holder and containing a deposition material;
Heating means for heating and melting the vapor deposition raw material in the crucible to evaporate and generating a vapor deposition flow;
A shutter plate disposed between the substrate to be processed and the vapor deposition raw material, for releasing or blocking the vapor deposition flow;
In a vacuum vapor deposition apparatus comprising a shutter plate driving unit that moves the position of the shutter plate, and depositing a vapor deposition flow on a substrate to be processed to form a film,
The vacuum evaporation apparatus is characterized in that at least the surface of the shutter plate on the evaporation source side is made of the same kind of material as the evaporation source.

In addition, the vacuum deposition apparatus of another configuration of the present invention,
at least,
A vacuum chamber capable of maintaining the interior in a vacuum state;
A vacuum pump for evacuating the vacuum chamber;
A substrate holder disposed in a vacuum chamber and holding a substrate to be processed;
A plurality of crucibles arranged opposite to the substrate holder and individually storing a plurality of types of vapor deposition materials;
A moving mechanism for moving a crucible containing a deposition raw material to be vaporized from a plurality of crucibles to a predetermined heating position;
Heating means for heating and melting and evaporating the vapor deposition material in the crucible at the heating position to generate a vapor deposition flow;
A shutter plate disposed between the substrate to be processed and the vapor deposition raw material, for releasing or blocking the vapor deposition flow;
In a vacuum vapor deposition apparatus comprising a shutter plate driving unit that moves the position of the shutter plate, and depositing a vapor deposition flow on a substrate to be processed to form a film,
The shutter plate is provided in the same number as the number of types of the plurality of types of vapor deposition materials, and at least the surface on the side of the vapor deposition material of each shutter plate is made of the same type of material so as to correspond one-to-one with the plurality of types of vapor deposition materials. It is a vacuum evaporation apparatus characterized by comprising.

  According to the vacuum vapor deposition apparatus of the present invention, since at least the surface of the shutter plate on the vapor deposition raw material side is made of the same material as the vapor deposition raw material, the vapor deposition flow is applied to the rear surface of the shutter plate during gas discharge operation or slow cooling after the vapor deposition operation. Even if the adhering matter adheres and the adhering matter reacts with the shutter plate material by radiant heat from the melted vapor deposition raw material in the crucible, even if different materials do not mix and fall, the vapor deposition raw material in the crucible Will not pollute.

  In the case of a vacuum vapor deposition apparatus having a plurality of crucibles for individually storing a plurality of types of vapor deposition materials, and depositing the vapor deposition materials to be vaporized by moving them to a predetermined heating position (electron beam irradiation position) The shutter plate is provided in the same number as the number of types of the plurality of types of vapor deposition materials, and at least the surface on the vapor deposition material side of each shutter plate is the same type so as to correspond to the plurality of types of vapor deposition materials on a one-to-one basis. Since a shutter plate made of a material and made of the same type of material as the vapor deposition raw material at the heating position is selected and used, deposits of various material types do not adhere to the rear surface of the shutter plate. Further, the number of shutter plates need only be the same as the number of types of vapor deposition materials, and no more plates are necessary.

  Provided is a vacuum vapor deposition apparatus having a function capable of preventing deposits adhering to the rear surface of a shutter plate from falling into a crucible during a slow cooling after a gas discharge operation or a vapor deposition operation and contaminating an internal vapor deposition raw material. This object was realized by using at least the surface of the shutter plate on the vapor deposition material side as the same material as the vapor deposition material.

  An example of the vacuum deposition apparatus of the present invention is shown in FIGS. 1 and 2 are longitudinal sectional views of a vacuum vapor deposition apparatus provided with one crucible (one kind of vapor deposition raw material), FIG. 1 shows a vapor deposition flow discharge state, and FIG. 2 shows a vapor deposition flow cut-off state. . The same parts as those in FIGS. 8 and 9 are denoted by the same reference numerals.

  A vacuum vapor deposition apparatus 101 of the present invention is arranged in a vacuum chamber 2 capable of maintaining the inside in a vacuum state, a vacuum pump 3 for evacuating the inside of the vacuum chamber 2 to a vacuum, and as a substrate to be processed. For example, a substrate holder 5 that holds the semiconductor substrate 4, a crucible 7 that is disposed so as to face the substrate holder 5 and that accommodates the deposition material 6, and an electron beam as a heating means that heats and melts and evaporates the deposition material 6. 8 (broken arrows in the figure), a focusing coil 10 and a deflection coil 11 for applying a magnetic force for focusing and deflecting the electron beam 8, and a deposition flow 12 from the deposition material 6 (solid arrows in the figure) The shutter plate 102 is made of the same kind of material as the vapor deposition raw material 6 and the shutter plate drive moves the position of the shutter plate 102. Unit 14, a film thickness monitor 15 that is disposed in the vicinity of the semiconductor substrate 4 and measures the film formation rate, and a power control unit 16 that controls the power of the electron gun 9 based on a signal from the film thickness monitor 15. ing.

  Here, the shutter plate 102 is moved above the vapor deposition raw material 6 by the shutter plate driving unit 14 to block the vapor deposition flow 12 or is retreated from the vapor deposition raw material 6 to a predetermined standby position to release the vapor deposition flow 12. You can do it.

  Next, operation | movement of the vacuum evaporation system 101 is demonstrated. First, the semiconductor substrate 4 is held on the substrate holder 5 and the vacuum pump 3 is operated to reduce the pressure in the vacuum chamber 2 to a desired degree of vacuum.

  Next, an electron beam 8 is emitted from the electron gun 9 and controlled by the focusing coil 10 and the deflection coil 11 to irradiate the surface of the vapor deposition raw material 6 substantially perpendicularly, and the vapor deposition raw material 6 is heated and melted to be evaporated.

  Here, before performing the vapor deposition operation on the semiconductor substrate 4, a so-called gas out operation is performed for the purpose of evaporating impurities on the surface of the vapor deposition raw material 6 and making the surface state uniform. As shown in FIG. 2, this gas discharge operation is performed by moving the shutter plate 102 above the vapor deposition material 6 and shutting the vapor deposition flow 12. For this reason, the vapor deposition flow 12 is radiated on the surface of the shutter plate 102 on the vapor deposition material side (hereinafter referred to as the rear surface of the shutter plate), and it is avoided that the same deposits 17 as the vapor deposition material 6 are undesirably adhered. Absent.

  Thereafter, when the gas discharge operation is completed, as shown in FIG. 1, the shutter plate 102 is retracted to a predetermined standby position, the vapor deposition flow 12 is discharged toward the semiconductor substrate 4, and is monitored while being monitored by the film thickness monitor 15. The film is formed.

  Next, when the predetermined film formation on the semiconductor substrate 4 is completed, as shown in FIG. 2, the shutter plate 102 is moved again above the vapor deposition raw material 6, and the vapor deposition flow 12 is shut off so that the electron gun 9 Reduce power gradually and stop. Also during this slow cooling, the vapor deposition flow 12 is radiated on the rear surface of the shutter plate, and it is inevitable that the deposit 17 of the same kind as the vapor deposition raw material 6 is undesirably adhered.

  In the above description, the heating method using the electron beam 8 has been described as the heating method for the vapor deposition material 6, but a heating method such as resistance heating or high-frequency heating may be used.

  When the vacuum deposition apparatus 101 as described above is used, the vapor deposition flow 12 is radiated to the rear surface of the shutter plate during the gas discharge operation or the slow cooling after the vapor deposition operation, and the same kind of deposit 17 as the vapor deposition raw material 6 adheres. However, even if the deposit 17 receives radiant heat from the molten deposition material 6 in the crucible 7 and reacts with the material of the shutter plate 102, the entire shutter plate 102 remains the deposition material 6. Since the different materials are not mixed in the deposits 17 and fall into the crucible 7, there is no fear of contaminating the vapor deposition raw material 6.

  In the above description, the entire shutter plate 102 is described as having the same material as the vapor deposition material 6. However, when the vapor deposition material 6 is expensive Au or the like, the entire shutter plate 102 is not necessarily the same material as the vapor deposition material 6. There is no need to do this, and the rear surface of the shutter plate may be simply covered with the same material as the vapor deposition material 6. For example, as shown in FIG. 3 (a), the back surface of the shutter plate may be coated with a plating layer 103 after plating the same kind of material as the vapor deposition material to a certain thickness. In addition to the plating method, a thin plate (not shown) made of the same material as the vapor deposition material may be prepared and attached by bonding with an adhesive (not shown). It is preferable that different materials such as an adhesive (not shown) need not be used.

  Further, as shown in FIGS. 3 (b) and 3 (c), the back surface of the shutter plate is provided with a concavo-convex 104 shape by blasting or the like, and the device for making it difficult to drop the deposit 17 by using the anchor effect is also used. You can also. 3B shows the case where the entire shutter plate 102 is made of the same kind of material as the vapor deposition raw material 6, and FIG. 3C shows the case where the rear surface of the shutter plate is covered with the same kind of plating layer 103 as the vapor deposition raw material 6. Show.

  Next, other configurations of the vacuum deposition apparatus of the present invention are shown in FIGS. 4 and 6 are longitudinal sectional views of a vacuum vapor deposition apparatus provided with a plurality of crucibles (plural types of vapor deposition raw materials), FIG. 4 shows a vapor deposition flow discharge state, and FIG. 6 shows a vapor deposition flow cut-off state. FIG. 5 is a plan view of a crucible containing a plurality of types of vapor deposition materials individually. The same parts as those in FIGS. 10 and 11 are denoted by the same reference numerals.

  A vacuum deposition apparatus 201 having another configuration according to the present invention is arranged in a vacuum chamber 2 capable of maintaining the inside in a vacuum state, a vacuum pump 3 that exhausts the inside of the vacuum chamber 2 to a vacuum, and the vacuum chamber 2. A substrate holder 5 that holds, for example, a semiconductor substrate 4 as a substrate to be processed, and four crucibles 7a to 7d that are disposed to face the substrate holder 5 and individually accommodate, for example, four types of vapor deposition materials 6a to 6d; A rotating mechanism 21 that moves a deposition material to be deposited (deposition material 6a in the figure) to a predetermined heating position (electron beam irradiation position), and a heating unit that heats and melts and evaporates the deposition material at the heating position. An electron gun 9 that emits an electron beam 8 (broken arrows in the figure), a focusing coil 10 and a deflection coil 11 that provide a magnetic force for focusing and deflecting the electron beam 8, and an evaporation source Four shutter plates 202a to 202d, which are the features of the present invention, that discharge or block the vapor deposition flow 12 (solid arrow in the figure) from 6a, and a shutter plate drive unit that moves the positions of the shutter plates 202a to 202d 203, a film thickness monitor 15 that is disposed in the vicinity of the semiconductor substrate 4 and measures the film formation rate, and a power control unit 16 that controls the power of the electron gun 9 based on a signal from the film thickness monitor 15. Yes.

  Further, other vapor deposition materials 6b, 6c, 6d other than the heating position are masked with a shielding plate (not shown) so as not to be contaminated.

  Here, the shutter plates 202a to 202d are provided in the same number (four) as the number of types (four types) of the vapor deposition materials 6a to 6d, and the entire shutter plates 202a to 202d are four types of vapor deposition materials 6a to 6d. Are made of the same kind of materials so as to correspond one-to-one.

  Further, the shutter plates 202a to 202d are arbitrarily selected by the shutter plate driving unit 203, and move to above the vapor deposition raw material 6a at the heating position to block the vapor deposition flow 12, or from above the vapor deposition raw material 6a to a predetermined standby position. The vapor deposition flow 12 can be discharged by retreating.

  Next, operation | movement of the vacuum evaporation system 201 is demonstrated. First, the semiconductor substrate 4 is held on the substrate holder 5 and the vacuum pump 3 is operated to reduce the pressure in the vacuum chamber 2 to a desired degree of vacuum.

  Next, an electron beam 8 (broken arrow in the figure) is emitted from the electron gun 9 and controlled by the focusing coil 10 and the deflection coil 11 to irradiate the surface of the vapor deposition material 6a substantially perpendicularly, and the vapor deposition material 6a is heated and melted. Evaporate. In addition, the vapor deposition raw material 6a to be vapor-deposited is moved to the heating position by the rotating mechanism 21 in advance.

  Here, before performing the vapor deposition operation on the semiconductor substrate 4, a so-called gas out operation is performed for the purpose of evaporating impurities on the surface of the vapor deposition raw material 6 a and making the surface state uniform. As shown in FIG. 6, this gas discharge operation is performed by selecting a shutter plate 202a made of the same kind of material as the vapor deposition material 6a at the heating position from the four shutter plates 202a to 202d, and the shutter plate driving unit 203. Thus, the vapor deposition flow 12 is moved to a state above the vapor deposition raw material 6a. For this reason, the vapor deposition flow 12 is radiated on the rear surface of the shutter plate, and it is inevitable that the deposit 17 of the same kind as the vapor deposition raw material 6a adheres undesirably.

  Thereafter, when the gas discharge operation is completed, as shown in FIG. 4, the shutter plate 202 a is retracted to a predetermined standby position, the vapor deposition flow 12 is discharged toward the semiconductor substrate 4, and is monitored while being monitored by the film thickness monitor 15. The film is formed.

  And if the vapor deposition operation of one material type is completed, the vapor deposition raw material to be vapor deposited next is moved to the heating position and heated, whereby the vapor deposition operation of different material types can be performed continuously. At this time, the other vapor deposition materials 6b, 6c, 6d other than the heating position are masked with a shielding plate (not shown) so as not to be contaminated.

  Next, when the predetermined film formation on the semiconductor substrate 4 is completed, as shown in FIG. 6, the shutter plate 202a is moved again above the vapor deposition raw material 6a, and the vapor deposition flow 12 is shut off so that the electron gun 9 Reduce power gradually and stop. Also during this slow cooling, the vapor deposition flow 12 is radiated to the rear surface of the shutter plate, and it is inevitable that the deposit 17 of the same kind as the vapor deposition raw material 6a undesirably adheres.

  In the above description, the heating method using the electron beam 8 has been described as the heating method for the vapor deposition material 6a. However, a heating method such as resistance heating or high-frequency heating may be used.

  When the vacuum deposition apparatus 201 as described above is used, the vapor deposition flow 12 is radiated to the rear surface of the shutter plate during the gas discharge operation or the slow cooling after the vapor deposition operation, and the same kind of deposit 17 as the vapor deposition raw material 6a adheres. However, even if the deposit 17 receives radiant heat from the melted vapor deposition material 6a in the crucible 7a and reacts with the material of the shutter plate 202a, the entire shutter plate 202a remains the vapor deposition material 6a. Since the different materials are not mixed in the deposits 17 and fall into the crucible 7a, there is no fear of contaminating the vapor deposition raw material 6a.

  Each time the deposition materials 6a to 6d are switched, the shutter plates 202a to 202d to be used are switched to the shutter plates 202a to 202d made of the same material as the deposition materials 6a to 6d. The material type deposit 17 does not adhere.

  In the above description, the entire shutter plates 202a to 202d are described as having the same material as the vapor deposition materials 6a to 6d. However, when the vapor deposition material is expensive Au or the like, the entire shutter plates 202a to 202d are not necessarily deposited. It is not necessary to use the same kind of material as 6a to 6d, and the back surface of the shutter plate may be simply covered with the same kind of material as the vapor deposition materials 6a to 6d. For example, as shown in FIG. 7A, the shutter plate back surface may be coated with a plating layer 204a to 204d after plating the same kind of material as the vapor deposition material to a certain thickness. In addition to the plating method, a thin plate (not shown) made of the same material as the vapor deposition material may be prepared and attached by bonding with an adhesive (not shown). It is preferable that different materials such as an adhesive (not shown) need not be used.

  Further, as shown in FIGS. 7B and 7C, a concavity and convexity 205 shape is provided on the rear surface of the shutter plate by blasting or the like, and a device for making it difficult to drop the deposit 17 by using the anchor effect is also used. You can also. 7B shows a case where the entire shutter plates 202a to 202d are made of the same kind of material as the vapor deposition material, and FIG. 7C is a plating layer 204a to 204d of the same kind as the vapor deposition material on the back surface of the shutter plate. The case where it coat | covers is shown.

  The present invention can be applied to a vacuum vapor deposition apparatus having a function that does not contaminate the vapor deposition raw material even if the vapor deposition raw material adheres and accumulates on the shutter plate and falls into the crucible.

Longitudinal sectional view of an example of the vacuum evaporation apparatus of the present invention (deposition flow discharge state) Longitudinal sectional view of an example of the vacuum evaporation apparatus of the present invention (deposition flow cut off state) The side view of the modification of the shutter board with which the vacuum evaporation system of this invention is equipped Longitudinal sectional view of an example of a vacuum deposition apparatus of another configuration of the present invention (deposition flow discharge state) The top view of the crucible which respectively accommodated the multiple types of vapor deposition raw material with which the vacuum vapor deposition apparatus of the other structure of this invention is provided separately Longitudinal sectional view of an example of a vacuum vapor deposition apparatus of another configuration of the present invention (deposition flow cut off state) The side view of the modification of the shutter board with which the vacuum evaporation system of other composition of the present invention is provided Longitudinal sectional view of an example of a conventional vacuum evaporation system (deposition flow discharge state) Vertical section of an example of a conventional vacuum evaporation system (deposition flow cut off state) Longitudinal sectional view of an example of a conventional vacuum deposition apparatus with another configuration (deposition state of vapor deposition) The top view of the crucible which respectively accommodated the multiple types of vapor deposition raw materials with which the vacuum vapor deposition apparatus of the other conventional structure is each separately accommodated Longitudinal section of the improved vacuum deposition system (deposition of the vapor deposition flow)

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Conventional vacuum deposition apparatus 2 Vacuum chamber 3 Vacuum pump 4 Semiconductor substrate 5 Substrate holder 6, 6a-6d Deposition raw material 7, 7a-7d Crucible 8 Electron beam 9 Electron gun 10 Focusing coil 11 Deflection coil 12 Deposition flow 13, 31, 32, 102, 202a to 202d Shutter plate 14, 203 Shutter plate drive unit 15 Film thickness monitor 16 Power control unit 17 Deposited material 20 Conventional vacuum vapor deposition device of another configuration 21 Rotating mechanism 30 Improved vacuum vapor deposition device 101 The present invention Vacuum deposition apparatus 103, 204a to 204d Plating layer 104, 205 Concavity and convexity 201 Vacuum deposition apparatus of other configuration of the present invention

Claims (10)

at least,
A vacuum chamber capable of maintaining the interior in a vacuum state;
A vacuum pump that evacuates the vacuum chamber;
A substrate holder disposed in the vacuum chamber and holding a substrate to be processed;
A crucible disposed opposite to the substrate holder and containing a vapor deposition material;
Heating means for heating and melting the vapor deposition raw material in the crucible to evaporate and generating a vapor deposition flow;
A shutter plate disposed between the substrate to be processed and the vapor deposition raw material to release or block the vapor deposition flow;
A vacuum deposition apparatus including a shutter plate driving unit that moves the position of the shutter plate, and depositing the deposition flow on the substrate to be processed;
The vacuum evaporation apparatus characterized in that at least the surface of the shutter plate on the evaporation source side is made of the same material as the evaporation source.   The vacuum deposition apparatus according to claim 1, wherein the entire shutter plate is made of the same material as the deposition material.   The vacuum deposition apparatus according to claim 1, wherein a surface of the shutter plate on a deposition material side is coated with the same material as the deposition material.   The vacuum deposition apparatus according to claim 3, wherein the coating method is a plating method. at least,
A vacuum chamber capable of maintaining the interior in a vacuum state;
A vacuum pump that evacuates the vacuum chamber;
A substrate holder disposed in the vacuum chamber and holding a substrate to be processed;
A plurality of crucibles arranged opposite to the substrate holder and individually storing a plurality of types of vapor deposition materials;
A moving mechanism for moving a crucible containing a vapor deposition material to be vaporized from the plurality of crucibles to a predetermined heating position;
Heating means for heating and melting and evaporating the evaporation material in the crucible at the heating position to generate an evaporation flow;
A shutter plate disposed between the substrate to be processed and the vapor deposition raw material to release or block the vapor deposition flow;
A vacuum deposition apparatus including a shutter plate driving unit that moves the position of the shutter plate, and depositing the deposition flow on the substrate to be processed;
The shutter plate is provided in the same number as the number of types of the plurality of types of vapor deposition materials, and at least the surface of each shutter plate on the side of the vapor deposition material is in one-to-one correspondence with the plurality of types of vapor deposition materials. A vacuum deposition apparatus characterized by being made of the same kind of material.   6. The vacuum deposition apparatus according to claim 5, wherein each of the shutter plates is made of the same kind of material so as to correspond to the plurality of kinds of deposition raw materials on a one-to-one basis.   6. The vacuum deposition apparatus according to claim 5, wherein the surface of each shutter plate on the deposition material side is coated with the same kind of material so as to correspond to the plurality of types of deposition materials in a one-to-one relationship. .   The vacuum deposition apparatus according to claim 7, wherein the coating method is a plating method.   The shutter driving unit can select a shutter plate made of the same kind of material as the vapor deposition material at the heating position, at least on the surface on the vapor deposition material side, from the plurality of shutter plates. The vacuum evaporation apparatus in any one of 8.   The vacuum deposition apparatus according to any one of claims 1 to 9, wherein a surface of the shutter plate on a deposition material side has an uneven shape.

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