JP2006013502A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2006013502A
JP2006013502A JP2005181472A JP2005181472A JP2006013502A JP 2006013502 A JP2006013502 A JP 2006013502A JP 2005181472 A JP2005181472 A JP 2005181472A JP 2005181472 A JP2005181472 A JP 2005181472A JP 2006013502 A JP2006013502 A JP 2006013502A
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Japan
Prior art keywords
gas
substrate
purge
lithographic apparatus
support structure
Prior art date
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Pending
Application number
JP2005181472A
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English (en)
Japanese (ja)
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JP2006013502A5 (enExample
Inventor
Lof Joeri
ロフ ジョエリ
Johannes Catharinus Hubertus Mulkens
キャサリヌス ヒューベルテュス ムルケンス ヨハネス
Jeroen Johannes Sophia Maria Mertens
ヨハネス ソフィア マリア メルテンス ジェローン
Der Net Antonius J Van
ヨハネス ファン デル ネット アントニウス
Ham Ronald V Der
ファン デル ハム ロナルド
Nicolas Lallemant
ラルレマント ニコラス
Marcel Beckers
ベッカーズ マルセル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
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ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2006013502A publication Critical patent/JP2006013502A/ja
Publication of JP2006013502A5 publication Critical patent/JP2006013502A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005181472A 2004-06-23 2005-06-22 リソグラフィ装置およびデバイス製造方法 Pending JP2006013502A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/873,650 US7057702B2 (en) 2004-06-23 2004-06-23 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007300911A Division JP5064979B2 (ja) 2004-06-23 2007-11-20 リソグラフィ装置およびデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2006013502A true JP2006013502A (ja) 2006-01-12
JP2006013502A5 JP2006013502A5 (enExample) 2007-08-09

Family

ID=34938361

Family Applications (2)

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JP2005181472A Pending JP2006013502A (ja) 2004-06-23 2005-06-22 リソグラフィ装置およびデバイス製造方法
JP2007300911A Expired - Fee Related JP5064979B2 (ja) 2004-06-23 2007-11-20 リソグラフィ装置およびデバイス製造方法

Family Applications After (1)

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JP2007300911A Expired - Fee Related JP5064979B2 (ja) 2004-06-23 2007-11-20 リソグラフィ装置およびデバイス製造方法

Country Status (7)

Country Link
US (1) US7057702B2 (enExample)
EP (1) EP1610183A3 (enExample)
JP (2) JP2006013502A (enExample)
KR (1) KR100695553B1 (enExample)
CN (2) CN101916050B (enExample)
SG (2) SG138618A1 (enExample)
TW (1) TWI277837B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182450A (ja) * 2011-02-28 2012-09-20 Asml Netherlands Bv 流体ハンドリング構造、リソグラフィ装置およびデバイス製造方法
JP2015522843A (ja) * 2012-07-06 2015-08-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
KR20190043168A (ko) * 2016-08-30 2019-04-25 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 렌즈 오염 방지 장치 및 방법
JP2020526800A (ja) * 2017-07-21 2020-08-31 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド 対物レンズ保護装置、対物レンズシステムおよびリソグラフィ装置
JP2024016127A (ja) * 2019-12-26 2024-02-06 ナンジン リアン セミコンダクター リミテッド 半導体産業におけるウェハ幾何学形状測定のためのツールアーキテクチャ

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US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG2014015176A (en) 2003-04-10 2015-06-29 Nippon Kogaku Kk Environmental system including vacuum scavange for an immersion lithography apparatus
KR101745223B1 (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG2012031738A (en) 2003-04-11 2015-07-30 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
KR101931923B1 (ko) 2003-06-19 2018-12-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
ATE467902T1 (de) * 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR20180042456A (ko) * 2004-03-25 2018-04-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
US7432513B2 (en) * 2005-10-21 2008-10-07 Asml Netherlands B.V. Gas shower, lithographic apparatus and use of a gas shower
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7728952B2 (en) * 2007-01-25 2010-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for closing plate take-over in immersion lithography
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
NL1035908A1 (nl) 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009094145A (ja) * 2007-10-04 2009-04-30 Canon Inc 露光装置、露光方法およびデバイス製造方法
NL2005586A (en) * 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and sealing device for a lithographic apparatus.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
WO2012027406A2 (en) * 2010-08-24 2012-03-01 Nikon Corporation Vacuum chamber assembly for supporting a workpiece
NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
WO2013075878A1 (en) * 2011-11-22 2013-05-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
CN106575084B (zh) * 2014-07-04 2019-11-01 Asml荷兰有限公司 光刻设备以及使用光刻设备制造器件的方法
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
EP3620858B1 (en) * 2018-09-10 2023-11-01 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing article
CN113728277B (zh) * 2019-04-26 2025-03-28 Asml控股股份有限公司 光刻装置和照射均匀性校正系统
US12386273B2 (en) 2019-08-20 2025-08-12 Asml Netherlands B.V. Substrate holder, lithographic apparatus and method
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
US11740564B2 (en) * 2020-06-18 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus and method using the same
CN113262956B (zh) * 2021-07-21 2021-10-15 四川洪芯微科技有限公司 一种半导体晶圆表面处理装置
DE102023204744A1 (de) * 2023-05-22 2024-05-16 Carl Zeiss Smt Gmbh Optisches system und projektionsbelichtungsanlage

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JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
EP1041605A4 (en) * 1997-08-29 2005-09-21 Nikon Corp TEMPERATURE ADJUSTMENT FOR A DISPLAY DEVICE
AU4653999A (en) * 1999-07-16 2001-02-05 Nikon Corporation Exposure method and system
WO2001084241A1 (en) * 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Non-contact seal using purge gas
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
TWI222668B (en) * 2001-12-21 2004-10-21 Nikon Corp Gas purging method and exposure system, and device production method
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
CN101424883B (zh) * 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182450A (ja) * 2011-02-28 2012-09-20 Asml Netherlands Bv 流体ハンドリング構造、リソグラフィ装置およびデバイス製造方法
US8830441B2 (en) 2011-02-28 2014-09-09 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
JP2015522843A (ja) * 2012-07-06 2015-08-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
US9513568B2 (en) 2012-07-06 2016-12-06 Asml Netherlands B.V. Lithographic apparatus
US10788763B2 (en) 2012-07-06 2020-09-29 Asml Netherlands B.V. Lithographic apparatus
KR20190043168A (ko) * 2016-08-30 2019-04-25 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 렌즈 오염 방지 장치 및 방법
JP2019525259A (ja) * 2016-08-30 2019-09-05 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド レンズ汚染防止装置および方法
KR102212629B1 (ko) * 2016-08-30 2021-02-04 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 렌즈 오염 방지 장치 및 방법
JP2020526800A (ja) * 2017-07-21 2020-08-31 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド 対物レンズ保護装置、対物レンズシステムおよびリソグラフィ装置
US10983448B2 (en) 2017-07-21 2021-04-20 Shanghai Micro Electronics Equipment (Group) Co., Ltd. Objective lens protection device, objective lens system and lithographic device
JP2024016127A (ja) * 2019-12-26 2024-02-06 ナンジン リアン セミコンダクター リミテッド 半導体産業におけるウェハ幾何学形状測定のためのツールアーキテクチャ

Also Published As

Publication number Publication date
CN101916050A (zh) 2010-12-15
JP2008072139A (ja) 2008-03-27
CN1713075B (zh) 2010-08-04
SG138618A1 (en) 2008-01-28
KR100695553B1 (ko) 2007-03-14
EP1610183A2 (en) 2005-12-28
TWI277837B (en) 2007-04-01
US7057702B2 (en) 2006-06-06
SG118391A1 (en) 2006-01-27
KR20060048484A (ko) 2006-05-18
JP5064979B2 (ja) 2012-10-31
EP1610183A3 (en) 2007-10-31
CN101916050B (zh) 2013-11-20
TW200612207A (en) 2006-04-16
CN1713075A (zh) 2005-12-28
US20050286032A1 (en) 2005-12-29

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