TWI277837B - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing method Download PDFInfo
- Publication number
- TWI277837B TWI277837B TW094120867A TW94120867A TWI277837B TW I277837 B TWI277837 B TW I277837B TW 094120867 A TW094120867 A TW 094120867A TW 94120867 A TW94120867 A TW 94120867A TW I277837 B TWI277837 B TW I277837B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- gas
- patterned
- fluid supply
- purge
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 245
- 239000012530 fluid Substances 0.000 claims abstract description 67
- 230000008878 coupling Effects 0.000 claims abstract description 36
- 238000010168 coupling process Methods 0.000 claims abstract description 36
- 238000005859 coupling reaction Methods 0.000 claims abstract description 36
- 238000005286 illumination Methods 0.000 claims abstract description 26
- 230000005855 radiation Effects 0.000 claims abstract description 26
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 238000010926 purge Methods 0.000 claims description 115
- 238000000746 purification Methods 0.000 claims description 66
- 238000001459 lithography Methods 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 8
- 230000008901 benefit Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000009991 scouring Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 244
- 230000003287 optical effect Effects 0.000 description 12
- 239000003570 air Substances 0.000 description 11
- 238000010790 dilution Methods 0.000 description 8
- 239000012895 dilution Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005242 cardiac chamber Anatomy 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000035611 feeding Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/873,650 US7057702B2 (en) | 2004-06-23 | 2004-06-23 | Lithographic apparatus and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200612207A TW200612207A (en) | 2006-04-16 |
| TWI277837B true TWI277837B (en) | 2007-04-01 |
Family
ID=34938361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094120867A TWI277837B (en) | 2004-06-23 | 2005-06-22 | Lithographic apparatus and device manufacturing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7057702B2 (enExample) |
| EP (1) | EP1610183A3 (enExample) |
| JP (2) | JP2006013502A (enExample) |
| KR (1) | KR100695553B1 (enExample) |
| CN (2) | CN101916050B (enExample) |
| SG (2) | SG138618A1 (enExample) |
| TW (1) | TWI277837B (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101745223B1 (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| EP2667253B1 (en) * | 2003-04-10 | 2015-06-10 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
| SG10201603067VA (en) | 2003-04-11 | 2016-05-30 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
| TWI433212B (zh) | 2003-06-19 | 2014-04-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
| KR101324810B1 (ko) * | 2004-01-05 | 2013-11-01 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| TWI402893B (zh) | 2004-03-25 | 2013-07-21 | 尼康股份有限公司 | 曝光方法 |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7522261B2 (en) * | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7119876B2 (en) * | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7583357B2 (en) * | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7170583B2 (en) * | 2005-06-29 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus immersion damage control |
| US7432513B2 (en) * | 2005-10-21 | 2008-10-07 | Asml Netherlands B.V. | Gas shower, lithographic apparatus and use of a gas shower |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7728952B2 (en) * | 2007-01-25 | 2010-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for closing plate take-over in immersion lithography |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8817226B2 (en) * | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| NL1035908A1 (nl) | 2007-09-25 | 2009-03-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP2009094145A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 露光装置、露光方法およびデバイス製造方法 |
| NL2005586A (en) * | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and sealing device for a lithographic apparatus. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| WO2012027406A2 (en) * | 2010-08-24 | 2012-03-01 | Nikon Corporation | Vacuum chamber assembly for supporting a workpiece |
| NL2008199A (en) * | 2011-02-28 | 2012-08-29 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2008695A (en) * | 2011-05-25 | 2012-11-27 | Asml Netherlands Bv | Lithographic apparatus comprising substrate table. |
| WO2013075878A1 (en) * | 2011-11-22 | 2013-05-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2014005780A1 (en) * | 2012-07-06 | 2014-01-09 | Asml Netherlands B.V. | A lithographic apparatus |
| US9568828B2 (en) * | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP6537194B2 (ja) * | 2014-07-04 | 2019-07-03 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及びリソグラフィ装置を用いてデバイスを製造する方法 |
| US11397385B2 (en) | 2016-06-17 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Apparatus and a method of forming a particle shield |
| CN107783283B (zh) * | 2016-08-30 | 2020-01-24 | 上海微电子装备（集团）股份有限公司 | 镜片防污染装置及方法 |
| CN109283797B (zh) * | 2017-07-21 | 2021-04-30 | 上海微电子装备（集团）股份有限公司 | 物镜保护装置、物镜系统以及光刻设备 |
| EP3620858B1 (en) * | 2018-09-10 | 2023-11-01 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing article |
| WO2020216643A1 (en) * | 2019-04-26 | 2020-10-29 | Asml Holding N.V. | Lithographic apparatus and illumination uniformity correction system |
| CN114270270A (zh) * | 2019-08-20 | 2022-04-01 | Asml荷兰有限公司 | 衬底保持器、光刻设备和方法 |
| EP3918421B1 (en) * | 2019-12-26 | 2024-05-15 | Nanjing ZongAn Semiconductor Equipment Ltd | Tool architecture for wafer geometry measurement in semiconductor industry |
| EP3919978A1 (en) * | 2020-06-05 | 2021-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and a method of forming a particle shield |
| US11740564B2 (en) * | 2020-06-18 | 2023-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus and method using the same |
| CN113262956B (zh) * | 2021-07-21 | 2021-10-15 | 四川洪芯微科技有限公司 | 一种半导体晶圆表面处理装置 |
| DE102023204744A1 (de) * | 2023-05-22 | 2024-05-16 | Carl Zeiss Smt Gmbh | Optisches system und projektionsbelichtungsanlage |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| WO1999012194A1 (en) * | 1997-08-29 | 1999-03-11 | Nikon Corporation | Temperature adjusting method and aligner to which this method is applied |
| WO2001006548A1 (en) * | 1999-07-16 | 2001-01-25 | Nikon Corporation | Exposure method and system |
| WO2001084241A1 (en) * | 2000-05-03 | 2001-11-08 | Silicon Valley Group, Inc. | Non-contact seal using purge gas |
| JP2001358056A (ja) * | 2000-06-15 | 2001-12-26 | Canon Inc | 露光装置 |
| TWI222668B (en) * | 2001-12-21 | 2004-10-21 | Nikon Corp | Gas purging method and exposure system, and device production method |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| KR20110086130A (ko) * | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
-
2004
- 2004-06-23 US US10/873,650 patent/US7057702B2/en not_active Expired - Lifetime
-
2005
- 2005-06-20 SG SG200718993-9A patent/SG138618A1/en unknown
- 2005-06-20 SG SG200503932A patent/SG118391A1/en unknown
- 2005-06-22 JP JP2005181472A patent/JP2006013502A/ja active Pending
- 2005-06-22 TW TW094120867A patent/TWI277837B/zh not_active IP Right Cessation
- 2005-06-23 KR KR1020050054233A patent/KR100695553B1/ko not_active Expired - Fee Related
- 2005-06-23 EP EP05076479A patent/EP1610183A3/en not_active Withdrawn
- 2005-06-23 CN CN2010102497928A patent/CN101916050B/zh not_active Expired - Fee Related
- 2005-06-23 CN CN200510079476.XA patent/CN1713075B/zh not_active Expired - Fee Related
-
2007
- 2007-11-20 JP JP2007300911A patent/JP5064979B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1610183A3 (en) | 2007-10-31 |
| JP2008072139A (ja) | 2008-03-27 |
| JP2006013502A (ja) | 2006-01-12 |
| US20050286032A1 (en) | 2005-12-29 |
| EP1610183A2 (en) | 2005-12-28 |
| US7057702B2 (en) | 2006-06-06 |
| KR100695553B1 (ko) | 2007-03-14 |
| CN1713075A (zh) | 2005-12-28 |
| SG138618A1 (en) | 2008-01-28 |
| SG118391A1 (en) | 2006-01-27 |
| TW200612207A (en) | 2006-04-16 |
| CN101916050B (zh) | 2013-11-20 |
| CN1713075B (zh) | 2010-08-04 |
| KR20060048484A (ko) | 2006-05-18 |
| JP5064979B2 (ja) | 2012-10-31 |
| CN101916050A (zh) | 2010-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI277837B (en) | Lithographic apparatus and device manufacturing method | |
| US11327404B2 (en) | Lithographic apparatus and device manufacturing method | |
| CN100451832C (zh) | 光刻装置和器件制造方法 | |
| JP4938424B2 (ja) | 液浸型投影装置の汚染を防止または低減する方法および液浸型リソグラフィ装置 | |
| US9182679B2 (en) | Lithographic apparatus and device manufacturing method | |
| JP5085585B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
| US8860926B2 (en) | Lithographic apparatus and device manufacturing method | |
| US10495981B2 (en) | Lithographic apparatus and device manufacturing method | |
| TW201202862A (en) | A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus | |
| TW200307980A (en) | Transfer method for a mask or substrate, storage box, device or apparatus adapted for use in such method, and device manufacturing method comprising such a method | |
| TWI410745B (zh) | 微影裝置及元件製造方法 | |
| WO2007083686A1 (ja) | 露光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |