JP2005539232A - 複数の検出器ユニットを有するx線検出器 - Google Patents
複数の検出器ユニットを有するx線検出器 Download PDFInfo
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- JP2005539232A JP2005539232A JP2004537357A JP2004537357A JP2005539232A JP 2005539232 A JP2005539232 A JP 2005539232A JP 2004537357 A JP2004537357 A JP 2004537357A JP 2004537357 A JP2004537357 A JP 2004537357A JP 2005539232 A JP2005539232 A JP 2005539232A
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- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 10
- 230000005855 radiation Effects 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000002591 computed tomography Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QLAFITOLRQQGTE-UHFFFAOYSA-H gadolinium(3+);trisulfate Chemical compound [Gd+3].[Gd+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O QLAFITOLRQQGTE-UHFFFAOYSA-H 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
Abstract
Description
検知面に設置された複数の検出器ユニット、並びに
センサ素子及び読み出し回路を有する個々の検出器ユニット、
を有するX線検出器に関する。
Claims (6)
- 検知面に設置された複数の検出器ユニット、並びに
センサ素子及び読み出し回路を有する個々の検出器ユニット、
を有するX線検出器であって、
前記センサ素子及び前記読み出し回路は前記検知面に対して垂直に空間的に分離され、X線シールド構成体が個々のセンサ素子と個々の読み出し回路間の少なくとも一部に設けられることを特徴とするX線検出器。 - 前記X線シールド構成体において遮断部が開口され、前記センサ素子から前記読み出し回路への信号接続が前記遮断部を通過することを特徴とする請求項1に記載のX線検出器。
- 前記X線シールド構成体はいくつかの検出器ユニットに渡って伸展することを特徴とする請求項1又は2に記載のX線検出器。
- 隣接する読み出し回路同士が垂直吸収ユニットで分離されることを特徴とする請求項1に記載のX線検出器。
- 前記垂直吸収ユニットは前記X線シールド構成体と一体化されることを特徴とする請求項4に記載のX線検出器。
- 個々の検出器ユニット内において、前記センサ素子及び前記読み出し回路は前記検知面に対して平行にずれていることを特徴とする請求項1に記載のX線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02078861 | 2002-09-18 | ||
PCT/IB2003/003421 WO2004027454A1 (en) | 2002-09-18 | 2003-08-04 | X-ray detector with a plurality of detector units |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005539232A true JP2005539232A (ja) | 2005-12-22 |
Family
ID=32010983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004537357A Ceased JP2005539232A (ja) | 2002-09-18 | 2003-08-04 | 複数の検出器ユニットを有するx線検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7112799B2 (ja) |
EP (1) | EP1543351A1 (ja) |
JP (1) | JP2005539232A (ja) |
AU (1) | AU2003250433A1 (ja) |
WO (1) | WO2004027454A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009074964A (ja) * | 2007-09-21 | 2009-04-09 | Kyocera Corp | X線検出素子搭載用配線基板およびx線検出装置 |
JP2009076726A (ja) * | 2007-09-21 | 2009-04-09 | Kyocera Corp | X線検出素子搭載用配線基板およびx線検出装置 |
JP2011226817A (ja) * | 2010-04-15 | 2011-11-10 | Hamamatsu Photonics Kk | 接続基板 |
JP2011226816A (ja) * | 2010-04-15 | 2011-11-10 | Hamamatsu Photonics Kk | 放射線検出器モジュール |
JP2014510902A (ja) * | 2011-02-03 | 2014-05-01 | コーニンクレッカ フィリップス エヌ ヴェ | シングル又はマルチエネルギー放射線感受性垂直検出器 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1543350A1 (en) * | 2002-09-18 | 2005-06-22 | Koninklijke Philips Electronics N.V. | Radiation detector |
US7626176B2 (en) * | 2005-03-16 | 2009-12-01 | Koninklijke Philips Electronics N.V. | X-ray detector with in-pixel processing circuits |
JP2007101256A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | X線撮像装置及びx線ct装置 |
DE102006033496A1 (de) * | 2006-07-19 | 2008-01-31 | Siemens Ag | Strahlungsdetektor für Röntgen- oder Gammastrahlen |
US20090008564A1 (en) * | 2007-07-05 | 2009-01-08 | Cmt Medical Technologies Ltd. | Modular X-Ray Detector With Single Photon Counting, Energy Sensitivity And Integration Capabilities |
US8243878B2 (en) | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
US8687766B2 (en) * | 2010-07-13 | 2014-04-01 | Jordan Valley Semiconductors Ltd. | Enhancing accuracy of fast high-resolution X-ray diffractometry |
JP2012057954A (ja) * | 2010-09-06 | 2012-03-22 | Hitachi Medical Corp | 放射線検出システム及びx線ct装置 |
DE102011006421A1 (de) * | 2011-03-30 | 2012-10-04 | Siemens Aktiengesellschaft | Digitaler Röntgendetektor |
CN103959098B (zh) * | 2011-11-29 | 2017-04-26 | 皇家飞利浦有限公司 | 包括x射线吸收封装的闪烁体组以及包括所述闪烁体组的x射线探测器阵列 |
US9689996B2 (en) | 2013-04-05 | 2017-06-27 | General Electric Company | Integrated diode DAS detector |
EP3283903A1 (en) | 2015-04-14 | 2018-02-21 | Analogic Corporation | Detector array for radiation system |
US9459355B1 (en) * | 2015-06-30 | 2016-10-04 | General Electric Company | Radiation detector with stacked barrier layers and method of forming the same |
WO2017014798A1 (en) | 2015-07-17 | 2017-01-26 | Analogic Corporation | Detector unit for detector array of radiation imaging modality |
US10192646B2 (en) * | 2016-04-25 | 2019-01-29 | General Electric Company | Radiation shielding system |
US20220238301A1 (en) * | 2019-06-13 | 2022-07-28 | Dectris Ag | Electron detector |
WO2021064704A2 (en) * | 2019-10-03 | 2021-04-08 | Nano-X Imaging Ltd | Systems and methods for improving x-ray sources with switchable electron emitters |
JP2021135229A (ja) | 2020-02-28 | 2021-09-13 | 浜松ホトニクス株式会社 | 光検出装置 |
US11740367B2 (en) | 2022-01-07 | 2023-08-29 | Analogic Corporation | Radiation detectors for scanning systems, and related scanning systems |
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JPH07209430A (ja) * | 1993-12-06 | 1995-08-11 | Minnesota Mining & Mfg Co <3M> | 放射線固体検出パネル |
JPH07280945A (ja) * | 1994-04-14 | 1995-10-27 | Toshiba Corp | 放射線検出器 |
JPH09152486A (ja) * | 1995-09-28 | 1997-06-10 | Canon Inc | 撮像装置 |
JPH09288184A (ja) * | 1996-02-22 | 1997-11-04 | Canon Inc | 光電変換装置 |
JPH11295432A (ja) * | 1998-04-15 | 1999-10-29 | Shimadzu Corp | Ct用固体検出器 |
JP2002139569A (ja) * | 2000-08-10 | 2002-05-17 | Canon Inc | 大面積ファイバープレート、それを用いた放射線撮像装置、並びにそれらの製造方法 |
JP2002528728A (ja) * | 1998-10-28 | 2002-09-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | コンピュータトモグラフ検出器 |
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JP2001027673A (ja) * | 1999-07-15 | 2001-01-30 | Hitachi Medical Corp | X線検出器及びこれを用いるx線ct装置 |
JP3594122B2 (ja) | 2000-03-09 | 2004-11-24 | シャープ株式会社 | 二次元画像検出器 |
DE10132924A1 (de) * | 2001-07-06 | 2003-01-16 | Philips Corp Intellectual Pty | Flacher dynamischer Strahlungsdetektor |
-
2003
- 2003-08-04 EP EP03797396A patent/EP1543351A1/en not_active Withdrawn
- 2003-08-04 JP JP2004537357A patent/JP2005539232A/ja not_active Ceased
- 2003-08-04 AU AU2003250433A patent/AU2003250433A1/en not_active Abandoned
- 2003-08-04 US US10/528,396 patent/US7112799B2/en not_active Expired - Fee Related
- 2003-08-04 WO PCT/IB2003/003421 patent/WO2004027454A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07209430A (ja) * | 1993-12-06 | 1995-08-11 | Minnesota Mining & Mfg Co <3M> | 放射線固体検出パネル |
JPH07280945A (ja) * | 1994-04-14 | 1995-10-27 | Toshiba Corp | 放射線検出器 |
JPH09152486A (ja) * | 1995-09-28 | 1997-06-10 | Canon Inc | 撮像装置 |
JPH09288184A (ja) * | 1996-02-22 | 1997-11-04 | Canon Inc | 光電変換装置 |
JPH11295432A (ja) * | 1998-04-15 | 1999-10-29 | Shimadzu Corp | Ct用固体検出器 |
JP2002528728A (ja) * | 1998-10-28 | 2002-09-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | コンピュータトモグラフ検出器 |
JP2002139569A (ja) * | 2000-08-10 | 2002-05-17 | Canon Inc | 大面積ファイバープレート、それを用いた放射線撮像装置、並びにそれらの製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009074964A (ja) * | 2007-09-21 | 2009-04-09 | Kyocera Corp | X線検出素子搭載用配線基板およびx線検出装置 |
JP2009076726A (ja) * | 2007-09-21 | 2009-04-09 | Kyocera Corp | X線検出素子搭載用配線基板およびx線検出装置 |
JP2011226817A (ja) * | 2010-04-15 | 2011-11-10 | Hamamatsu Photonics Kk | 接続基板 |
JP2011226816A (ja) * | 2010-04-15 | 2011-11-10 | Hamamatsu Photonics Kk | 放射線検出器モジュール |
US8859975B2 (en) | 2010-04-15 | 2014-10-14 | Hamamatsu Photonics K.K. | Radiation detector module |
US9000388B2 (en) | 2010-04-15 | 2015-04-07 | Hamamatsu Photonics K. K. | Connection substrate |
JP2014510902A (ja) * | 2011-02-03 | 2014-05-01 | コーニンクレッカ フィリップス エヌ ヴェ | シングル又はマルチエネルギー放射線感受性垂直検出器 |
Also Published As
Publication number | Publication date |
---|---|
AU2003250433A1 (en) | 2004-04-08 |
US20050236573A1 (en) | 2005-10-27 |
WO2004027454A1 (en) | 2004-04-01 |
US7112799B2 (en) | 2006-09-26 |
EP1543351A1 (en) | 2005-06-22 |
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