JP2005536908A - 薄膜技術における位相が最適化された共振器用電極の製造方法 - Google Patents
薄膜技術における位相が最適化された共振器用電極の製造方法 Download PDFInfo
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- JP2005536908A JP2005536908A JP2003559015A JP2003559015A JP2005536908A JP 2005536908 A JP2005536908 A JP 2005536908A JP 2003559015 A JP2003559015 A JP 2003559015A JP 2003559015 A JP2003559015 A JP 2003559015A JP 2005536908 A JP2005536908 A JP 2005536908A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000005516 engineering process Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009933 burial Methods 0.000 claims 1
- 230000009643 growth defect Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
102 基板の下面
104 基板の上面
106 下部電極
108 下部電極の下面
110 下部電極の上面
112 圧電層
114 位相段階
116 成長欠陥
118 成長線
120 上部電極
122 圧電層の上面
124 金属スペーサー
126 絶縁層
126A 絶縁層の一部
Claims (12)
- 共振器用電極(106)を薄膜技術によって製造する製造方法であって、
共振器の電極(106)を、該電極の表面(110)を露出させるように、かつ、該電極(106)と絶縁層(126)とによって規定される表面がほぼ平坦となるように、絶縁層(126)に埋設する埋設工程を含むことを特徴とする製造方法。 - 絶縁層(126)の厚さを電極の厚さとほぼ同じにし、
上記埋設工程には、誘電体層(126)における電極(106)の外側にある一部がほぼ変化しないで残るように、電極(106)の表面を露出する露出工程を含めることを特徴とする請求項1に記載の製造方法。 - 上記露出工程は、電極の上の絶縁層(126A)を化学的機械研磨により除去する工程を含むことを特徴とする請求項2に記載の製造方法。
- 上記露出工程には、
上記電極の上面の一部を露出させるように、電極の上の絶縁層(126)の一部(126A)を、マスクを用いてエッチングする工程と、
工程(b.1.)後に残った環を、化学的機械研磨によって除去する工程とを含むことを特徴とする請求項1に記載の製造方法。 - 上記埋設工程には、
上記絶縁層(126)を形成する工程と、
上記絶縁層の一部を開口し開口部を設ける工程と、
絶縁層の表面と下部電極の露出した表面とがほぼ平坦になるように、上記開口部の中に電極を形成する工程とを含むことを特徴とする請求項1に記載の製造方法。 - 上記絶縁層(126)は誘電体層であることを特徴とする請求項1〜5のいずれか1項に記載の製造方法。
- 上記誘電体層(126)は、窒化珪素層または酸化珪素層であることを特徴とする請求項6に記載の製造方法。
- 下部電極(106)と上部電極(120)との間に、少なくとも部分的に配置された圧電層(114)を含み、かつ、基板(100)上に形成される共振器を、薄膜技術によって製造する製造方法であって、
(a)上記請求項1〜7のいずれか1項に記載の製造方法によって、基板上に共振器の下部電極(106)を形成する工程と、
(b)工程(a)で形成された構造の上に、圧電層(114)を形成する工程と、
(c)上記圧電層(114)の上に上部電極(120)を形成する工程とを含むことを特徴とする製造方法。 - 上記圧電層(114)は、AlN、ZnO、または、PZTから形成されることを特徴とする請求項8に記載の製造方法。
- 上記下部電極(106)および上部電極(110)が、アルミニウムおよび/またはタングステンを含むことを特徴とする請求項8または9に記載の製造方法。
- 上記共振器がBAW共振器である、請求項8〜10のいずれか1項に記載の製造方法。
- 請求項8〜11のいずれか1項に記載の製造方法によって製造されたBAW共振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10200741A DE10200741A1 (de) | 2002-01-11 | 2002-01-11 | Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie |
PCT/EP2002/014190 WO2003058811A1 (de) | 2002-01-11 | 2002-12-12 | Verfahren zur herstellung einer topologieoptimierten elektrode für einen resonator in dünnfilmtechnologie |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005536908A true JP2005536908A (ja) | 2005-12-02 |
JP4037366B2 JP4037366B2 (ja) | 2008-01-23 |
Family
ID=7711855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003559015A Expired - Fee Related JP4037366B2 (ja) | 2002-01-11 | 2002-12-12 | 薄膜技術における位相が最適化された共振器用電極の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7657983B2 (ja) |
EP (1) | EP1464113B1 (ja) |
JP (1) | JP4037366B2 (ja) |
DE (2) | DE10200741A1 (ja) |
WO (1) | WO2003058811A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288819A (ja) * | 2007-05-17 | 2008-11-27 | Fujitsu Media Device Kk | 圧電薄膜共振器およびフィルタ |
JP2009016589A (ja) * | 2007-07-05 | 2009-01-22 | Seiko Epson Corp | 圧電素子及びその製造方法、アクチュエータ装置、液体噴射ヘッド並びに液体噴射装置 |
JP2009510884A (ja) * | 2005-09-30 | 2009-03-12 | エヌエックスピー ビー ヴィ | 薄膜バルク音響(baw)共振器におけるまたはそれに関連する改良 |
JPWO2007119643A1 (ja) * | 2006-03-31 | 2009-08-27 | 宇部興産株式会社 | 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法 |
JP2015525040A (ja) * | 2012-08-03 | 2015-08-27 | エプコス アクチエンゲゼルシャフトEpcos Ag | トポグラフィー構造及びその製造方法 |
Families Citing this family (12)
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US20100107389A1 (en) * | 2002-01-11 | 2010-05-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of fabricating an electrode for a bulk acoustic resonator |
US7466213B2 (en) | 2003-10-06 | 2008-12-16 | Nxp B.V. | Resonator structure and method of producing it |
DE102004047023B4 (de) * | 2004-09-28 | 2006-07-13 | Siemens Ag | Kondensatorstruktur mit dielektrischer Zwischenschicht, Verfahren zum Herstellen der Kondensatorstruktur und Verwendung der Kondensatorstruktur |
DE102006008721B4 (de) * | 2006-02-24 | 2009-12-24 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Verfahren zur Herstellung eines akustischen Spiegels für einen piezoelektrischen Resonator und Verfahren zur Herstellung eines piezoelektrischen Resonators |
US7694397B2 (en) * | 2006-02-24 | 2010-04-13 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of manufacturing an acoustic mirror for piezoelectric resonator |
DE102006019505B4 (de) | 2006-04-26 | 2008-01-03 | Infineon Technologies Ag | Verfahren zur Herstellung einer strukturierten Bodenelektrode in einem piezoelektrischen Bauelement |
US7825749B2 (en) | 2007-05-31 | 2010-11-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Integrated coupled resonator filter and bulk acoustic wave devices |
US8597531B2 (en) | 2009-04-02 | 2013-12-03 | Infineon Technologies Ag | Method for manufacturing a device on a substrate |
US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
US9484882B2 (en) * | 2013-02-14 | 2016-11-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having temperature compensation |
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-
2002
- 2002-01-11 DE DE10200741A patent/DE10200741A1/de not_active Withdrawn
- 2002-12-12 DE DE50207038T patent/DE50207038D1/de not_active Expired - Lifetime
- 2002-12-12 JP JP2003559015A patent/JP4037366B2/ja not_active Expired - Fee Related
- 2002-12-12 EP EP02795182A patent/EP1464113B1/de not_active Expired - Fee Related
- 2002-12-12 WO PCT/EP2002/014190 patent/WO2003058811A1/de active IP Right Grant
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2004
- 2004-07-09 US US10/888,429 patent/US7657983B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009510884A (ja) * | 2005-09-30 | 2009-03-12 | エヌエックスピー ビー ヴィ | 薄膜バルク音響(baw)共振器におけるまたはそれに関連する改良 |
JPWO2007119643A1 (ja) * | 2006-03-31 | 2009-08-27 | 宇部興産株式会社 | 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法 |
JP4688070B2 (ja) * | 2006-03-31 | 2011-05-25 | 宇部興産株式会社 | 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法 |
JP2008288819A (ja) * | 2007-05-17 | 2008-11-27 | Fujitsu Media Device Kk | 圧電薄膜共振器およびフィルタ |
US7737806B2 (en) | 2007-05-17 | 2010-06-15 | Fujitsu Media Devices Limited | Piezoelectric thin-film resonator and filter |
JP2009016589A (ja) * | 2007-07-05 | 2009-01-22 | Seiko Epson Corp | 圧電素子及びその製造方法、アクチュエータ装置、液体噴射ヘッド並びに液体噴射装置 |
JP2015525040A (ja) * | 2012-08-03 | 2015-08-27 | エプコス アクチエンゲゼルシャフトEpcos Ag | トポグラフィー構造及びその製造方法 |
US10491189B2 (en) | 2012-08-03 | 2019-11-26 | Qualcomm Incorporated | Topographical structure and method of producing it |
Also Published As
Publication number | Publication date |
---|---|
US20070209174A1 (en) | 2007-09-13 |
EP1464113B1 (de) | 2006-05-31 |
EP1464113A1 (de) | 2004-10-06 |
DE50207038D1 (de) | 2006-07-06 |
WO2003058811A1 (de) | 2003-07-17 |
US7657983B2 (en) | 2010-02-09 |
JP4037366B2 (ja) | 2008-01-23 |
DE10200741A1 (de) | 2003-07-24 |
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