JP2005531129A - 増大する帯域幅を備えた光ファイバー受信器 - Google Patents
増大する帯域幅を備えた光ファイバー受信器 Download PDFInfo
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- JP2005531129A JP2005531129A JP2003579392A JP2003579392A JP2005531129A JP 2005531129 A JP2005531129 A JP 2005531129A JP 2003579392 A JP2003579392 A JP 2003579392A JP 2003579392 A JP2003579392 A JP 2003579392A JP 2005531129 A JP2005531129 A JP 2005531129A
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- 239000013307 optical fiber Substances 0.000 title abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 239000000835 fiber Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims 7
- 230000005611 electricity Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
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- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2581—Multimode transmission
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Computer Networks & Wireless Communication (AREA)
- Amplifiers (AREA)
- Light Receiving Elements (AREA)
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- Manufacture, Treatment Of Glass Fibers (AREA)
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
Description
(b)伝達特性増幅器を備えた部分ホトダイオードD1
(c)それぞれ、固有の伝達特性増幅器を備え、主回路30に接続する追加部分を備えた4個のホトダイオード
2 ホトダイオード
3 P−エピタキシャル層
4 Pトラフ
5 P+埋込層
6 断面
7 P+基板
10 電気接点
11 4分割ホトダイオード
12 細長ストリップ
20 固有増幅器
21 固有増幅器
22 固有増幅器
23 固有増幅器
29 伝達特性増幅器
30 主増幅器
D ダイオード
D1 部分ダイオード
D2 部分ダイオード
D3 部分ダイオード
D4 部分ダイオード
d1 受信器面の直径
d2 全ダイオードの直径
Rf フィードバック抵抗
R1 抵抗
R2 抵抗
A−B 図5における断線
Claims (15)
- 本質的に少なくとも1つの光受信器(11)と少なくとも1つの伝達特性増幅器とから成るホトエレクトロニクス集積回路(OEIC)のための光ファイバー受信器において、
(i)光受信器は多数の部分ホトダイオード(D1、D2、D3、D4)に分割されるか、多数の個々のホトダイオードからなり、
(ii)各部分ホトダイオードは、固有の伝達特性増幅器(20、21、22、23)に接続され、伝達特性増幅器の電気出力信号は主増幅器(30)に電気的に統合される前記光ファイバー受信器。 - ホトダイオード、伝達特性増幅器および他の回路部分を備えた主増幅器は、チップに集積されることを特徴とする請求項1に記載のファイバー受信器。
- CMOS技術で製造されることを特徴とする請求項1および請求項2に記載のファイバー受信器。
- バイポーラ技術で製造されることを特徴とする請求項1および請求項2に記載のファイバー受信器。
- BICMOS技術で製造されることを特徴とする請求項1および請求項2に記載のファイバー受信器。
- 特に、本質的に1mm直径(d2)までの光受信器(11)のサイズを備えた一体構造型回路内の集積部品としての請求項1または請求項2に記載のファイバー受信器。
- 伝達特性増幅器はオペレーション増幅器回路として構成される請求項1に記載のファイバー受信器。
- 伝達特性増幅器(21、22、23、20)は電流電圧変換器として接続される請求項1または請求項7に記載のファイバー受信器。
- 光受信器(11)の4つの部分範囲(D1、D2、D3、D4)は、特に、それぞれ、中間にあり、光または電気の不感中間域(12)により別々のホトダイオードとして構成される請求項1に記載のファイバー受信器。
- 特に、比較的に厚いプラスチックファイバーとしての光導電ファイバーの端部での光受信器(11)内に高周波数光信号を受ける方法において、ファイバーにより光受信器(11)に撮像される光点は光受信器(11)の多数の個々の範囲(D1、D2、D3、D4)に当たり、光受信器は電気的に相互に分離されるか、片側では本質的に電気的な導電性を相互に持たない前記方法。
- 光点は、本質的に1mm、または、それ以下の直径の寸法であり、比較的に大きい面である請求項10に記載の方法。
- 撮像される光点は、本質的に光受信器(11)のサイズに適合するか、光受信器のサイズに適合する請求項10に記載の方法。
- 光受信器(11)の各個々の範囲(D1、D2、D3)は光点よりも小さく構成されるか、光導電ファイバーの端部の光受信器の主面よりも小さく構成される請求項10に記載の方法。
- 個々の範囲から出る電気信号は、それぞれ独立した増幅器(21、22、23、20)を介して高帯域幅に導かれ、その後、電気的に集合される(30)請求項10に記載の方法。
- 光受信器(11)は、光信号を同じファイバーから本質的に同時に多数の対応する電気信号へ変換し、特に、個々の範囲としての多数の独立したホトダイオードを介して変換する請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10213045A DE10213045B4 (de) | 2002-03-22 | 2002-03-22 | Integrierter optischer Faser-Empfänger |
PCT/DE2003/000969 WO2003081813A2 (de) | 2002-03-22 | 2003-03-24 | Optischer faserempfaenger mit erhoehter bandbreite |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005531129A true JP2005531129A (ja) | 2005-10-13 |
Family
ID=28050782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003579392A Pending JP2005531129A (ja) | 2002-03-22 | 2003-03-24 | 増大する帯域幅を備えた光ファイバー受信器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7282689B2 (ja) |
EP (1) | EP1488549B1 (ja) |
JP (1) | JP2005531129A (ja) |
KR (1) | KR100958218B1 (ja) |
AT (1) | ATE313177T1 (ja) |
AU (1) | AU2003232583A1 (ja) |
DE (3) | DE10213045B4 (ja) |
ES (1) | ES2254955T3 (ja) |
WO (1) | WO2003081813A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230227B2 (en) * | 2004-10-08 | 2007-06-12 | The Boeing Company | Lenslet/detector array assembly for high data rate optical communications |
EP2216815B1 (en) * | 2009-02-05 | 2014-04-02 | ams AG | Integrated circuit comprising PIN diodes |
DE102010038479B4 (de) | 2010-07-27 | 2018-01-04 | Universität Duisburg-Essen | Übertragungsvorrichtung für eine Freiraumübertragung von optischen Signalen nebst zugehöriger Verwendung |
US8977139B2 (en) | 2012-10-29 | 2015-03-10 | Finisar Corporation | Integrated circuits in optical receivers |
WO2021084108A1 (en) * | 2019-10-31 | 2021-05-06 | Technische Universiteit Eindhoven | An optical wireless communication receiver with large photodetector surface area, large field of view and high bandwidth |
US11177775B2 (en) * | 2019-12-12 | 2021-11-16 | Applied Materials Israel Ltd. | Detection circuit and method for amplifying a photosensor output current |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837501A (ja) * | 1994-07-25 | 1996-02-06 | Ricoh Co Ltd | 光受信装置 |
JPH1038683A (ja) * | 1996-07-22 | 1998-02-13 | Nikon Corp | 光量検出装置 |
JPH10164624A (ja) * | 1996-11-29 | 1998-06-19 | Sony Corp | ホワイトバランス測定装置 |
JPH1146010A (ja) * | 1997-05-27 | 1999-02-16 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
JPH11340925A (ja) * | 1998-05-28 | 1999-12-10 | Sanyo Electric Co Ltd | 受光用半導体集積回路 |
US20020003649A1 (en) * | 2000-06-13 | 2002-01-10 | Feng Kai D. | Parallel opto-electric structure for high sensitivity and wide bandwidth optical transceiver |
JP2002314119A (ja) * | 2001-04-11 | 2002-10-25 | Hamamatsu Photonics Kk | 光検出器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4540952A (en) * | 1981-09-08 | 1985-09-10 | At&T Bell Laboratories | Nonintegrating receiver |
DE3338024A1 (de) * | 1983-10-20 | 1985-05-02 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Verstaerker mit strom-spannungswandlung, insbesondere vorverstaerker eines optischen empfaengers |
US5235672A (en) * | 1991-02-06 | 1993-08-10 | Irvine Sensors Corporation | Hardware for electronic neural network |
US5371623A (en) * | 1992-07-01 | 1994-12-06 | Motorola, Inc. | High bit rate infrared communication system for overcoming multipath |
US5790295A (en) * | 1995-08-28 | 1998-08-04 | Apple Computer, Inc. | Gated integrator preamplifier for infrared data networks |
US6392219B1 (en) * | 2000-03-06 | 2002-05-21 | Tektronix, Inc. | Discrete filter-less optical reference receiver and output amplifier |
-
2002
- 2002-03-22 DE DE10213045A patent/DE10213045B4/de not_active Expired - Fee Related
-
2003
- 2003-03-24 US US10/507,306 patent/US7282689B2/en not_active Expired - Fee Related
- 2003-03-24 DE DE50301928T patent/DE50301928D1/de not_active Expired - Lifetime
- 2003-03-24 AU AU2003232583A patent/AU2003232583A1/en not_active Abandoned
- 2003-03-24 WO PCT/DE2003/000969 patent/WO2003081813A2/de active IP Right Grant
- 2003-03-24 EP EP03744765A patent/EP1488549B1/de not_active Expired - Lifetime
- 2003-03-24 AT AT03744765T patent/ATE313177T1/de active
- 2003-03-24 DE DE10391783T patent/DE10391783D2/de not_active Withdrawn - After Issue
- 2003-03-24 ES ES03744765T patent/ES2254955T3/es not_active Expired - Lifetime
- 2003-03-24 JP JP2003579392A patent/JP2005531129A/ja active Pending
- 2003-03-24 KR KR1020047014405A patent/KR100958218B1/ko not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837501A (ja) * | 1994-07-25 | 1996-02-06 | Ricoh Co Ltd | 光受信装置 |
JPH1038683A (ja) * | 1996-07-22 | 1998-02-13 | Nikon Corp | 光量検出装置 |
JPH10164624A (ja) * | 1996-11-29 | 1998-06-19 | Sony Corp | ホワイトバランス測定装置 |
JPH1146010A (ja) * | 1997-05-27 | 1999-02-16 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
JPH11340925A (ja) * | 1998-05-28 | 1999-12-10 | Sanyo Electric Co Ltd | 受光用半導体集積回路 |
US20020003649A1 (en) * | 2000-06-13 | 2002-01-10 | Feng Kai D. | Parallel opto-electric structure for high sensitivity and wide bandwidth optical transceiver |
JP2002314119A (ja) * | 2001-04-11 | 2002-10-25 | Hamamatsu Photonics Kk | 光検出器 |
Also Published As
Publication number | Publication date |
---|---|
DE10213045A1 (de) | 2003-10-16 |
US20060163452A1 (en) | 2006-07-27 |
AU2003232583A1 (en) | 2003-10-08 |
ES2254955T3 (es) | 2006-06-16 |
KR100958218B1 (ko) | 2010-05-18 |
KR20040099325A (ko) | 2004-11-26 |
EP1488549A2 (de) | 2004-12-22 |
WO2003081813A2 (de) | 2003-10-02 |
DE10213045B4 (de) | 2004-05-06 |
ATE313177T1 (de) | 2005-12-15 |
EP1488549B1 (de) | 2005-12-14 |
US7282689B2 (en) | 2007-10-16 |
DE10391783D2 (de) | 2005-02-10 |
DE50301928D1 (de) | 2006-01-19 |
WO2003081813A3 (de) | 2003-11-13 |
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