JP2005526383A5 - - Google Patents

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Publication number
JP2005526383A5
JP2005526383A5 JP2003580034A JP2003580034A JP2005526383A5 JP 2005526383 A5 JP2005526383 A5 JP 2005526383A5 JP 2003580034 A JP2003580034 A JP 2003580034A JP 2003580034 A JP2003580034 A JP 2003580034A JP 2005526383 A5 JP2005526383 A5 JP 2005526383A5
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JP
Japan
Prior art keywords
polishing pad
heating
fluid
manifold
platen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003580034A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005526383A (ja
Filing date
Publication date
Priority claimed from US10/112,628 external-priority patent/US6896586B2/en
Application filed filed Critical
Publication of JP2005526383A publication Critical patent/JP2005526383A/ja
Publication of JP2005526383A5 publication Critical patent/JP2005526383A5/ja
Pending legal-status Critical Current

Links

JP2003580034A 2002-03-29 2003-03-28 研磨パッドを加熱するための方法及び装置 Pending JP2005526383A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/112,628 2002-03-29
US10/112,628 US6896586B2 (en) 2002-03-29 2002-03-29 Method and apparatus for heating polishing pad
PCT/US2003/009465 WO2003082521A1 (en) 2002-03-29 2003-03-28 Method and apparatus for heating polishing pad

Publications (2)

Publication Number Publication Date
JP2005526383A JP2005526383A (ja) 2005-09-02
JP2005526383A5 true JP2005526383A5 (enExample) 2006-05-18

Family

ID=28453390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003580034A Pending JP2005526383A (ja) 2002-03-29 2003-03-28 研磨パッドを加熱するための方法及び装置

Country Status (7)

Country Link
US (1) US6896586B2 (enExample)
EP (1) EP1497076A4 (enExample)
JP (1) JP2005526383A (enExample)
CN (1) CN100361784C (enExample)
AU (1) AU2003220560A1 (enExample)
TW (1) TWI258399B (enExample)
WO (1) WO2003082521A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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WO2007045267A1 (en) * 2005-10-19 2007-04-26 Freescale Semiconductor, Inc. A system and method for cleaning a conditioning device
US7883393B2 (en) * 2005-11-08 2011-02-08 Freescale Semiconductor, Inc. System and method for removing particles from a polishing pad
JP4787063B2 (ja) * 2005-12-09 2011-10-05 株式会社荏原製作所 研磨装置及び研磨方法
US20070227901A1 (en) * 2006-03-30 2007-10-04 Applied Materials, Inc. Temperature control for ECMP process
JP4902433B2 (ja) * 2007-06-13 2012-03-21 株式会社荏原製作所 研磨装置の研磨面加熱、冷却装置
DE102007041209B4 (de) * 2007-08-31 2017-11-23 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Polierkopf, der Zonenkontrolle verwendet
US20090287340A1 (en) * 2008-05-15 2009-11-19 Confluense Llc In-line effluent analysis method and apparatus for CMP process control
KR101592623B1 (ko) * 2008-12-10 2016-02-11 램 리써치 코포레이션 실리콘 전극 세척용 이머시브 산화 및 에칭 프로세스
JP5547472B2 (ja) * 2009-12-28 2014-07-16 株式会社荏原製作所 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置
CN102528651B (zh) * 2010-12-21 2014-10-22 中国科学院微电子研究所 化学机械抛光设备及其预热方法
JP2012148376A (ja) * 2011-01-20 2012-08-09 Ebara Corp 研磨方法及び研磨装置
JP5628067B2 (ja) * 2011-02-25 2014-11-19 株式会社荏原製作所 研磨パッドの温度調整機構を備えた研磨装置
CN102794698B (zh) * 2012-08-16 2015-10-21 中国科学院西安光学精密机械研究所 辐射温度场加速腐蚀的研抛装置
CN102785145B (zh) * 2012-08-16 2015-07-29 中国科学院西安光学精密机械研究所 基于控制腐蚀的气囊式研抛装置
US9550270B2 (en) * 2013-07-31 2017-01-24 Taiwan Semiconductor Manufacturing Company Limited Temperature modification for chemical mechanical polishing
JP6161999B2 (ja) * 2013-08-27 2017-07-12 株式会社荏原製作所 研磨方法および研磨装置
CN103612182A (zh) * 2013-11-27 2014-03-05 苏州道众机械制造有限公司 平面带式磨床
US10454752B2 (en) 2015-11-02 2019-10-22 Servicenow, Inc. System and method for processing alerts indicative of conditions of a computing infrastructure
JP6923342B2 (ja) * 2017-04-11 2021-08-18 株式会社荏原製作所 研磨装置、及び、研磨方法
KR102331074B1 (ko) * 2017-04-11 2021-11-25 주식회사 케이씨텍 기판 처리 장치
DE202017105160U1 (de) * 2017-05-18 2018-08-22 Steinemann Technology Ag Bandschleifvorrichtung zum Überwachen eines Schleifbandes
TW202408726A (zh) * 2017-11-14 2024-03-01 美商應用材料股份有限公司 用於化學機械研磨的溫度控制的方法與系統
CN108296341A (zh) * 2018-04-13 2018-07-20 宁波得晴电器科技有限公司 一种缓冲件成型工艺
US11597052B2 (en) 2018-06-27 2023-03-07 Applied Materials, Inc. Temperature control of chemical mechanical polishing
TW202534781A (zh) 2019-02-20 2025-09-01 美商應用材料股份有限公司 化學機械拋光裝置及化學機械拋光方法
TWI872101B (zh) 2019-08-13 2025-02-11 美商應用材料股份有限公司 Cmp溫度控制的裝置及方法
US11897079B2 (en) 2019-08-13 2024-02-13 Applied Materials, Inc. Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity
US11833637B2 (en) * 2020-06-29 2023-12-05 Applied Materials, Inc. Control of steam generation for chemical mechanical polishing
JP7682205B2 (ja) * 2020-06-30 2025-05-23 アプライド マテリアルズ インコーポレイテッド Cmp温度制御のための装置および方法
CN112677019B (zh) * 2020-12-23 2022-08-23 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) 压力检测装置及抛光设备
CN115673953B (zh) * 2022-06-20 2023-10-03 南通鑫耐隔热材料有限公司 一种纤维板加工用抛光打磨装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
DE3128880C2 (de) * 1981-07-22 1987-03-19 Fa. Peter Wolters, 2370 Rendsburg Maschine zum Läppen oder Polieren
US5873769A (en) * 1997-05-30 1999-02-23 Industrial Technology Research Institute Temperature compensated chemical mechanical polishing to achieve uniform removal rates
US5957750A (en) * 1997-12-18 1999-09-28 Micron Technology, Inc. Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
JP3693483B2 (ja) * 1998-01-30 2005-09-07 株式会社荏原製作所 研磨装置
US6020262A (en) * 1998-03-06 2000-02-01 Siemens Aktiengesellschaft Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer
US6000997A (en) * 1998-07-10 1999-12-14 Aplex, Inc. Temperature regulation in a CMP process
US6224461B1 (en) * 1999-03-29 2001-05-01 Lam Research Corporation Method and apparatus for stabilizing the process temperature during chemical mechanical polishing
US6225224B1 (en) * 1999-05-19 2001-05-01 Infineon Technologies Norht America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
US6244944B1 (en) * 1999-08-31 2001-06-12 Micron Technology, Inc. Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates
US6568991B2 (en) * 2001-08-28 2003-05-27 Speedfam-Ipec Corporation Method and apparatus for sensing a wafer in a carrier

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