JP2005521079A - 広い光帯域幅を有する電界吸収型変調器 - Google Patents

広い光帯域幅を有する電界吸収型変調器 Download PDF

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Publication number
JP2005521079A
JP2005521079A JP2003577047A JP2003577047A JP2005521079A JP 2005521079 A JP2005521079 A JP 2005521079A JP 2003577047 A JP2003577047 A JP 2003577047A JP 2003577047 A JP2003577047 A JP 2003577047A JP 2005521079 A JP2005521079 A JP 2005521079A
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sections
waveguide
waveguide structure
electroabsorption modulator
bias voltage
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JP2003577047A
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Japanese (ja)
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JP2005521079A5 (enExample
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ジョン， ヘイグ マーシュ，
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インテンス フォトニクス リミテッド
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Publication of JP2005521079A5 publication Critical patent/JP2005521079A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2003577047A 2002-03-16 2003-03-14 広い光帯域幅を有する電界吸収型変調器 Pending JP2005521079A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0206226.3A GB0206226D0 (en) 2002-03-16 2002-03-16 Electro-absorption modulator with broad optical bandwidth
PCT/GB2003/001083 WO2003079100A1 (en) 2002-03-16 2003-03-14 Electro-absorption modulator with broad optical bandwidth

Publications (2)

Publication Number Publication Date
JP2005521079A true JP2005521079A (ja) 2005-07-14
JP2005521079A5 JP2005521079A5 (enExample) 2006-03-16

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JP2003577047A Pending JP2005521079A (ja) 2002-03-16 2003-03-14 広い光帯域幅を有する電界吸収型変調器

Country Status (9)

Country Link
US (2) US20050206989A1 (enExample)
EP (1) EP1485751A1 (enExample)
JP (1) JP2005521079A (enExample)
CN (1) CN1332241C (enExample)
AU (1) AU2003216812A1 (enExample)
CA (1) CA2479397A1 (enExample)
GB (2) GB0206226D0 (enExample)
RU (1) RU2317575C2 (enExample)
WO (1) WO2003079100A1 (enExample)

Cited By (1)

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JP2010008763A (ja) * 2008-06-27 2010-01-14 Mitsubishi Electric Corp 光変調デバイス及び光半導体装置

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US7280721B2 (en) * 2002-11-06 2007-10-09 Azna Llc Multi-ring resonator implementation of optical spectrum reshaper for chirp managed laser technology
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US8131157B2 (en) * 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
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US7991291B2 (en) 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
JP4427067B2 (ja) * 2007-02-20 2010-03-03 富士通株式会社 光波形整形素子
US7697847B2 (en) * 2007-04-02 2010-04-13 Finisar Corporation Dispersion compensator for frequency reshaped optical signals
US7991297B2 (en) 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
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US8160455B2 (en) * 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US8260145B2 (en) 2008-03-12 2012-09-04 Deepnarayan Gupta Digital radio frequency tranceiver system and method
US7869473B2 (en) * 2008-03-21 2011-01-11 Finisar Corporation Directly modulated laser with isolated modulated gain electrode for improved frequency modulation
US8260150B2 (en) * 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
DE102008056096B4 (de) * 2008-11-04 2016-09-29 Forschungsverbund Berlin E.V. Verfahren zur selektiven Transmission eines optischen Signals
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010008763A (ja) * 2008-06-27 2010-01-14 Mitsubishi Electric Corp 光変調デバイス及び光半導体装置

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Publication number Publication date
US20050206989A1 (en) 2005-09-22
GB0421265D0 (en) 2004-10-27
CA2479397A1 (en) 2003-09-25
RU2317575C2 (ru) 2008-02-20
GB2401690B (en) 2005-07-27
AU2003216812A1 (en) 2003-09-29
RU2004130500A (ru) 2005-05-10
US20090147352A1 (en) 2009-06-11
WO2003079100A1 (en) 2003-09-25
CN1332241C (zh) 2007-08-15
GB0206226D0 (en) 2002-05-01
EP1485751A1 (en) 2004-12-15
CN1653375A (zh) 2005-08-10
GB2401690A (en) 2004-11-17

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