RU2317575C2 - Электроабсорбционный модулятор с широкой оптической полосой и способ модуляции оптического сигнала - Google Patents

Электроабсорбционный модулятор с широкой оптической полосой и способ модуляции оптического сигнала Download PDF

Info

Publication number
RU2317575C2
RU2317575C2 RU2004130500/28A RU2004130500A RU2317575C2 RU 2317575 C2 RU2317575 C2 RU 2317575C2 RU 2004130500/28 A RU2004130500/28 A RU 2004130500/28A RU 2004130500 A RU2004130500 A RU 2004130500A RU 2317575 C2 RU2317575 C2 RU 2317575C2
Authority
RU
Russia
Prior art keywords
sections
bias voltage
modulation
bias
waveguide structure
Prior art date
Application number
RU2004130500/28A
Other languages
English (en)
Russian (ru)
Other versions
RU2004130500A (ru
Inventor
Джон Хейг МАРШ
Original Assignee
Интенс Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Интенс Лимитед filed Critical Интенс Лимитед
Publication of RU2004130500A publication Critical patent/RU2004130500A/ru
Application granted granted Critical
Publication of RU2317575C2 publication Critical patent/RU2317575C2/ru

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
RU2004130500/28A 2002-03-16 2003-03-14 Электроабсорбционный модулятор с широкой оптической полосой и способ модуляции оптического сигнала RU2317575C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0206226.3A GB0206226D0 (en) 2002-03-16 2002-03-16 Electro-absorption modulator with broad optical bandwidth
GB0206226.3 2002-03-16

Publications (2)

Publication Number Publication Date
RU2004130500A RU2004130500A (ru) 2005-05-10
RU2317575C2 true RU2317575C2 (ru) 2008-02-20

Family

ID=9933100

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2004130500/28A RU2317575C2 (ru) 2002-03-16 2003-03-14 Электроабсорбционный модулятор с широкой оптической полосой и способ модуляции оптического сигнала

Country Status (9)

Country Link
US (2) US20050206989A1 (enExample)
EP (1) EP1485751A1 (enExample)
JP (1) JP2005521079A (enExample)
CN (1) CN1332241C (enExample)
AU (1) AU2003216812A1 (enExample)
CA (1) CA2479397A1 (enExample)
GB (2) GB0206226D0 (enExample)
RU (1) RU2317575C2 (enExample)
WO (1) WO2003079100A1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663762B2 (en) 2002-07-09 2010-02-16 Finisar Corporation High-speed transmission system comprising a coupled multi-cavity optical discriminator
US7263291B2 (en) * 2002-07-09 2007-08-28 Azna Llc Wavelength division multiplexing source using multifunctional filters
US6963685B2 (en) * 2002-07-09 2005-11-08 Daniel Mahgerefteh Power source for a dispersion compensation fiber optic system
US7054538B2 (en) * 2002-10-04 2006-05-30 Azna Llc Flat dispersion frequency discriminator (FDFD)
US7564889B2 (en) * 2002-11-06 2009-07-21 Finisar Corporation Adiabatically frequency modulated source
US7280721B2 (en) * 2002-11-06 2007-10-09 Azna Llc Multi-ring resonator implementation of optical spectrum reshaper for chirp managed laser technology
US7536113B2 (en) * 2002-11-06 2009-05-19 Finisar Corporation Chirp managed directly modulated laser with bandwidth limiting optical spectrum reshaper
US7742542B2 (en) * 2002-11-06 2010-06-22 Finisar Corporation Phase correlated quadrature amplitude modulation
US7505694B2 (en) * 2002-11-06 2009-03-17 Finisar Corporation Thermal chirp compensation systems for a chirp managed directly modulated laser (CML™) data link
US7558488B2 (en) * 2002-11-06 2009-07-07 Finisar Corporation Reach extension by using external Bragg grating for spectral filtering
US7809280B2 (en) * 2002-12-03 2010-10-05 Finisar Corporation Chirp-managed, electroabsorption-modulated laser
US7925172B2 (en) * 2002-12-03 2011-04-12 Finisar Corporation High power, low distortion directly modulated laser transmitter
US7474859B2 (en) * 2002-12-03 2009-01-06 Finisar Corporation Versatile compact transmitter for generation of advanced modulation formats
US7860404B2 (en) * 2002-12-03 2010-12-28 Finisar Corporation Optical FM source based on intra-cavity phase and amplitude modulation in lasers
US7542683B2 (en) 2002-12-03 2009-06-02 Finisar Corporation Chirp Managed Laser (CML) transmitter
US7813648B2 (en) * 2002-12-03 2010-10-12 Finisar Corporation Method and apparatus for compensating for fiber nonlinearity in a transmission system
US7613401B2 (en) * 2002-12-03 2009-11-03 Finisar Corporation Optical FM source based on intra-cavity phase and amplitude modulation in lasers
US7907648B2 (en) * 2002-12-03 2011-03-15 Finisar Corporation Optical FM source based on intra-cavity phase and amplitude modulation in lasers
US7480464B2 (en) * 2002-12-03 2009-01-20 Finisar Corporation Widely tunable, dispersion tolerant transmitter
US7609977B2 (en) * 2002-12-03 2009-10-27 Finisar Corporation Optical transmission using semiconductor optical amplifier (SOA)
US7630425B2 (en) * 2003-02-25 2009-12-08 Finisar Corporation Optical beam steering for tunable laser applications
US8792531B2 (en) 2003-02-25 2014-07-29 Finisar Corporation Optical beam steering for tunable laser applications
US7639955B2 (en) * 2004-09-02 2009-12-29 Finisar Corporation Method and apparatus for transmitting a signal using a chirp managed laser (CML) and an optical spectrum reshaper (OSR) before an optical receiver
JP4632833B2 (ja) * 2005-03-25 2011-02-16 富士通株式会社 半導体装置
US20070012860A1 (en) * 2005-05-05 2007-01-18 Daniel Mahgerefteh Optical source with ultra-low relative intensity noise (RIN)
CN101563865B (zh) * 2006-08-18 2017-04-26 菲尼萨公司 使用半导体光放大器（soa）的光传输
US7697186B2 (en) * 2006-10-24 2010-04-13 Finisar Corporation Spectral response modification via spatial filtering with optical fiber
WO2008080171A1 (en) 2006-12-22 2008-07-03 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US7941057B2 (en) 2006-12-28 2011-05-10 Finisar Corporation Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal
US8131157B2 (en) * 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US7962044B2 (en) 2007-02-02 2011-06-14 Finisar Corporation Temperature stabilizing packaging for optoelectronic components in a transmitter module
US8027593B2 (en) 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
US7991291B2 (en) 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
JP4427067B2 (ja) * 2007-02-20 2010-03-03 富士通株式会社 光波形整形素子
US7697847B2 (en) * 2007-04-02 2010-04-13 Finisar Corporation Dispersion compensator for frequency reshaped optical signals
US7991297B2 (en) 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8204386B2 (en) * 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US7760777B2 (en) * 2007-04-13 2010-07-20 Finisar Corporation DBR laser with improved thermal tuning efficiency
US7778295B2 (en) * 2007-05-14 2010-08-17 Finisar Corporation DBR laser with improved thermal tuning efficiency
US8160455B2 (en) * 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US8260145B2 (en) 2008-03-12 2012-09-04 Deepnarayan Gupta Digital radio frequency tranceiver system and method
US7869473B2 (en) * 2008-03-21 2011-01-11 Finisar Corporation Directly modulated laser with isolated modulated gain electrode for improved frequency modulation
US8260150B2 (en) * 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
JP2010008763A (ja) * 2008-06-27 2010-01-14 Mitsubishi Electric Corp 光変調デバイス及び光半導体装置
DE102008056096B4 (de) * 2008-11-04 2016-09-29 Forschungsverbund Berlin E.V. Verfahren zur selektiven Transmission eines optischen Signals
US8199785B2 (en) 2009-06-30 2012-06-12 Finisar Corporation Thermal chirp compensation in a chirp managed laser
RU2429512C2 (ru) * 2009-10-21 2011-09-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" - Госкорпорация "Росатом" Пространственно-временной модулятор света
EP2521227B1 (en) * 2011-05-04 2016-09-07 Alcatel Lucent Semiconductor optical amplifier device and optical matrix switch
DE102012209485B4 (de) 2012-06-05 2015-10-22 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Selektion von optischen Pulsen
CN110291451B (zh) * 2016-11-08 2023-02-17 赛灵思公司 具有集成光检测器的电吸收调制
WO2018100634A1 (ja) * 2016-11-29 2018-06-07 三菱電機株式会社 光デバイス
JP6910568B1 (ja) * 2020-07-03 2021-07-28 三菱電機株式会社 半導体光集積素子
CN116243565B (zh) * 2023-03-16 2024-07-23 天津大学 电子束诱导光刻胶生长的碳质绝缘层及制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2129720C1 (ru) * 1997-09-01 1999-04-27 Майер Александр Александрович Модулятор на основе эффекта фарадея
RU2153689C2 (ru) * 1998-06-11 2000-07-27 Майер Александр Александрович Способ переключения, усиления, управления и модуляции оптического излучения (варианты) и устройство для его осуществления
US6148122A (en) * 1998-11-17 2000-11-14 Qtera Corporation High speed lithium niobate polarization independent modulators
US6320990B1 (en) * 1999-03-05 2001-11-20 Nu-Wave Photonics, Inc. High-performance electro-optic intensity modulator using polymeric waveguides and grating modulation

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH0656906B2 (ja) * 1984-09-28 1994-07-27 株式会社日立製作所 半導体レ−ザ装置
US4705361A (en) * 1985-11-27 1987-11-10 Texas Instruments Incorporated Spatial light modulator
US5238868A (en) * 1989-11-30 1993-08-24 Gte Laboratories Incorporated Bandgap tuning of semiconductor quantum well structures
US5155737A (en) * 1990-11-07 1992-10-13 Nippon Telegraph & Telephone Corporation Semiconductor wavelength conversion device
JP2764845B2 (ja) * 1992-02-03 1998-06-11 国際電信電話株式会社 光パルス発生装置
US5596993A (en) * 1994-09-21 1997-01-28 Beth Israel Hospital Fetal data processing system and method
JP3244976B2 (ja) * 1994-12-05 2002-01-07 キヤノン株式会社 半導体レーザの駆動方法及び半導体レーザ装置及び光通信方法及びノード及び光通信システム
SE507376C2 (sv) * 1996-09-04 1998-05-18 Ericsson Telefon Ab L M Våglängdsavstämbar laseranordning
JP3736953B2 (ja) * 1997-10-20 2006-01-18 富士通株式会社 電界吸収型光変調器の駆動回路及び、これを用いた光送信器
JP2000101518A (ja) * 1998-09-28 2000-04-07 Univ Tokyo 光波長変換器
WO2001067165A2 (en) * 2000-03-09 2001-09-13 Optium, Inc. Apparatuses and methods for generating optical signals
WO2001088993A2 (en) * 2000-05-19 2001-11-22 Mcmaster University A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES
US6803604B2 (en) * 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
US6594295B1 (en) * 2001-11-16 2003-07-15 Fox-Tek, Inc. Semiconductor laser with disordered and non-disordered quantum well regions
US6628686B1 (en) * 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
US6731850B1 (en) * 2001-11-16 2004-05-04 Fox-Tek Single-waveguide integrated wavelength demux photodetector and method of making it
FR2855883B1 (fr) * 2003-06-03 2005-08-26 Cit Alcatel Dispositif optoelectronique integre comportant un modulateur a electroabsorption et un element electronique de commande du modulateur
GB2409570B (en) * 2003-10-10 2007-02-14 Agilent Technologies Inc Optoelectronic device having a discrete bragg reflector and an electro-absorption modulator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2129720C1 (ru) * 1997-09-01 1999-04-27 Майер Александр Александрович Модулятор на основе эффекта фарадея
RU2153689C2 (ru) * 1998-06-11 2000-07-27 Майер Александр Александрович Способ переключения, усиления, управления и модуляции оптического излучения (варианты) и устройство для его осуществления
US6148122A (en) * 1998-11-17 2000-11-14 Qtera Corporation High speed lithium niobate polarization independent modulators
US6320990B1 (en) * 1999-03-05 2001-11-20 Nu-Wave Photonics, Inc. High-performance electro-optic intensity modulator using polymeric waveguides and grating modulation

Also Published As

Publication number Publication date
US20050206989A1 (en) 2005-09-22
GB0421265D0 (en) 2004-10-27
JP2005521079A (ja) 2005-07-14
CA2479397A1 (en) 2003-09-25
GB2401690B (en) 2005-07-27
AU2003216812A1 (en) 2003-09-29
RU2004130500A (ru) 2005-05-10
US20090147352A1 (en) 2009-06-11
WO2003079100A1 (en) 2003-09-25
CN1332241C (zh) 2007-08-15
GB0206226D0 (en) 2002-05-01
EP1485751A1 (en) 2004-12-15
CN1653375A (zh) 2005-08-10
GB2401690A (en) 2004-11-17

Similar Documents

Publication Publication Date Title
RU2317575C2 (ru) Электроабсорбционный модулятор с широкой оптической полосой и способ модуляции оптического сигнала
US6150667A (en) Semiconductor optical modulator
CN101485055B (zh) 具有集成调制器阵列和混合键合的多波长激光器阵列的发射器-接收器
Noguchi et al. Millimeter-wave Ti: LiNbO3 optical modulators
US6647158B2 (en) Optical modulator using simultaneous push-pull drive of linear and quadratic electro-optic effects
CN1180306C (zh) 具有预定的频啁啾的光学调制器
EP2458433B1 (en) Optical modulator and manufacturing method of the optical modulator
CN102782567B (zh) 具有可控制线性调频脉冲的光调制器
CN102165346A (zh) 使用pn二极管进行高速硅光调制的方法和设备
US6912079B2 (en) Method and apparatus for phase shifting an optical beam in an optical device
JP4722941B2 (ja) 損失を削減した超高速の半導体変調器及び半導体スイッチ
US11165221B2 (en) Optical device based on series push-pull operation
Zucker et al. Zero‐loss quantum well waveguide Mach–Zehnder modulator at 1.55 μm
US20020159665A1 (en) Optical emitter including a modulator comprising a plurality of modulator units
US6775455B1 (en) Silicon mesa structure integrated in a glass-on-silicon waveguide, and a method of manufacturing it
CN107078458B (zh) 制作及操作光学调制器的方法
US20240184149A1 (en) Differential driving of lithium-containing electro-optic devices utilizing engineered electrodes
EP4033618A1 (en) Mach zehnder-modulated lasers
US20050141072A1 (en) Electroabsorption modulator with two sections
JP2000241775A (ja) 光変調器と光通信用光源及び光通信用モジュール
JP2007025370A (ja) 有機導波路型光変調器・光通信システム
Wilkinson Integrated optics-devices

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20090315