JP2005517282A - 位相シフトフォトリソグラフィックマスクの露光制御 - Google Patents

位相シフトフォトリソグラフィックマスクの露光制御 Download PDF

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Publication number
JP2005517282A
JP2005517282A JP2003504165A JP2003504165A JP2005517282A JP 2005517282 A JP2005517282 A JP 2005517282A JP 2003504165 A JP2003504165 A JP 2003504165A JP 2003504165 A JP2003504165 A JP 2003504165A JP 2005517282 A JP2005517282 A JP 2005517282A
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Japan
Prior art keywords
pattern
phase shift
mask
layer
exposure
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Pending
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JP2003504165A
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English (en)
Japanese (ja)
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JP2005517282A5 (https=
JP2005517282A6 (ja
Inventor
クリストフ ピエラ
ミチェル ルク コート
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ニューメリカル テクノロジーズ インコーポレイテッド
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Publication of JP2005517282A publication Critical patent/JP2005517282A/ja
Publication of JP2005517282A6 publication Critical patent/JP2005517282A6/ja
Publication of JP2005517282A5 publication Critical patent/JP2005517282A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003504165A 2001-06-08 2002-06-07 位相シフトフォトリソグラフィックマスクの露光制御 Pending JP2005517282A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US29678801P 2001-06-08 2001-06-08
US60/296,788 2001-06-08
US30414201P 2001-07-10 2001-07-10
US60/304,142 2001-07-10
US09/972,428 2001-10-05
US09/972,428 US6852471B2 (en) 2001-06-08 2001-10-05 Exposure control for phase shifting photolithographic masks
PCT/US2002/018480 WO2002101466A2 (en) 2001-06-08 2002-06-07 Exposure control for phase shifting photolithographic masks

Publications (3)

Publication Number Publication Date
JP2005517282A true JP2005517282A (ja) 2005-06-09
JP2005517282A6 JP2005517282A6 (ja) 2005-08-11
JP2005517282A5 JP2005517282A5 (https=) 2005-12-22

Family

ID=27404462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003504165A Pending JP2005517282A (ja) 2001-06-08 2002-06-07 位相シフトフォトリソグラフィックマスクの露光制御

Country Status (7)

Country Link
US (4) US6852471B2 (https=)
EP (1) EP1393132B1 (https=)
JP (1) JP2005517282A (https=)
CN (1) CN1282032C (https=)
AT (1) ATE555420T1 (https=)
AU (1) AU2002349203A1 (https=)
WO (1) WO2002101466A2 (https=)

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US7581203B2 (en) * 2003-06-30 2009-08-25 Agere Systems Inc. Method and apparatus for manufacturing multiple circuit patterns using a multiple project mask
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US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
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US7906253B2 (en) * 2007-09-28 2011-03-15 Texas Instruments Incorporated System and method for making photomasks
US20090311615A1 (en) * 2008-06-13 2009-12-17 Deming Tang Method of photolithographic patterning
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US8479125B2 (en) * 2009-03-31 2013-07-02 Christophe Pierrat Lithography modeling and applications
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US20150221196A1 (en) * 2012-06-12 2015-08-06 C. Rafin & Co Pty Ltd Method and Apparatus for Facilitating the Management of Health and Security
US20140205934A1 (en) * 2013-01-21 2014-07-24 Xilinx, Inc. Single reticle approach for multiple patterning technology
CN108319115B (zh) * 2018-02-28 2020-08-21 南昌航空大学 一种基于虚拟层动态调制的二元数字掩模光刻方法
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Also Published As

Publication number Publication date
EP1393132A2 (en) 2004-03-03
US7422841B2 (en) 2008-09-09
WO2002101466A3 (en) 2003-10-09
US6852471B2 (en) 2005-02-08
EP1393132B1 (en) 2012-04-25
US20100040965A1 (en) 2010-02-18
US20040209193A1 (en) 2004-10-21
US20080187869A1 (en) 2008-08-07
WO2002101466A2 (en) 2002-12-19
CN1282032C (zh) 2006-10-25
AU2002349203A1 (en) 2002-12-23
CN1514953A (zh) 2004-07-21
US20020187636A1 (en) 2002-12-12
US7629109B2 (en) 2009-12-08
ATE555420T1 (de) 2012-05-15

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