JP2005514611A5 - - Google Patents

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Publication number
JP2005514611A5
JP2005514611A5 JP2003558436A JP2003558436A JP2005514611A5 JP 2005514611 A5 JP2005514611 A5 JP 2005514611A5 JP 2003558436 A JP2003558436 A JP 2003558436A JP 2003558436 A JP2003558436 A JP 2003558436A JP 2005514611 A5 JP2005514611 A5 JP 2005514611A5
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JP
Japan
Prior art keywords
detection device
magnetoresistive element
magnetoresistive
power source
magnetic field
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Application number
JP2003558436A
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English (en)
Japanese (ja)
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JP4458849B2 (ja
JP2005514611A (ja
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Publication date
Priority claimed from US10/035,957 external-priority patent/US6667682B2/en
Application filed filed Critical
Publication of JP2005514611A publication Critical patent/JP2005514611A/ja
Publication of JP2005514611A5 publication Critical patent/JP2005514611A5/ja
Application granted granted Critical
Publication of JP4458849B2 publication Critical patent/JP4458849B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003558436A 2001-12-26 2002-12-03 多重目的センサとして磁気抵抗センサを使用するシステム及び装置 Expired - Fee Related JP4458849B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/035,957 US6667682B2 (en) 2001-12-26 2001-12-26 System and method for using magneto-resistive sensors as dual purpose sensors
PCT/US2002/038698 WO2003058173A1 (en) 2001-12-26 2002-12-03 System and method for using magneto-resistive sensors as dual purpose sensors

Publications (3)

Publication Number Publication Date
JP2005514611A JP2005514611A (ja) 2005-05-19
JP2005514611A5 true JP2005514611A5 (enExample) 2006-01-26
JP4458849B2 JP4458849B2 (ja) 2010-04-28

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ID=21885767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003558436A Expired - Fee Related JP4458849B2 (ja) 2001-12-26 2002-12-03 多重目的センサとして磁気抵抗センサを使用するシステム及び装置

Country Status (7)

Country Link
US (1) US6667682B2 (enExample)
EP (1) EP1459038B1 (enExample)
JP (1) JP4458849B2 (enExample)
KR (1) KR100983128B1 (enExample)
AU (1) AU2002359592A1 (enExample)
CA (1) CA2471864A1 (enExample)
WO (1) WO2003058173A1 (enExample)

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US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9347837B2 (en) 2012-04-17 2016-05-24 Honeywell International Inc. Multi-phase brushless DC motor control integrated circuit having magnetic sensor and band-gap temperature sensor formed thereon
US10345343B2 (en) 2013-03-15 2019-07-09 Allegro Microsystems, Llc Current sensor isolation
US9190606B2 (en) 2013-03-15 2015-11-17 Allegro Micosystems, LLC Packaging for an electronic device
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
US9013838B1 (en) 2013-10-01 2015-04-21 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US8885302B1 (en) * 2013-10-01 2014-11-11 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
JP6115501B2 (ja) * 2014-03-19 2017-04-19 株式会社デンソー 電流センサ
US9354284B2 (en) 2014-05-07 2016-05-31 Allegro Microsystems, Llc Magnetic field sensor configured to measure a magnetic field in a closed loop manner
US9322887B1 (en) 2014-12-01 2016-04-26 Allegro Microsystems, Llc Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source
EP3151017B1 (en) * 2015-09-29 2018-12-12 Honeywell International Inc. Amr speed and direction sensor for use with magnetic targets
CN106872914B (zh) * 2015-11-27 2019-09-10 爱盛科技股份有限公司 磁场感测装置及感测方法
RU2617454C1 (ru) * 2016-02-17 2017-04-25 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Способ изготовления магниторезистивного датчика
CN106225959A (zh) * 2016-07-04 2016-12-14 电子科技大学 一种柔性薄膜热流传感器及其制备方法
JP6309067B2 (ja) * 2016-10-31 2018-04-11 三菱電機株式会社 磁気検出装置
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US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
DE102018216131B4 (de) * 2018-09-21 2020-06-04 Hochschule Karlsruhe-Technik Und Wirtschaft Verfahren und Vorrichtung zur gleichzeitigen Bestimmung der Temperatur- und Widerstandsänderung von Sensorwiderständen einer als Viertel- oder Halbbrücke ausgebildeten Brückenschaltung
DE102018216136B4 (de) * 2018-09-21 2021-04-01 Hochschule Karlsruhe-Technik Und Wirtschaft Zwei Verfahren und eine Vorrichtung zur gleichzeitigen Bestimmung der Temperatur- und Widerstandsänderung von Sensorwiderständen einer Brückenschaltung
US10991644B2 (en) 2019-08-22 2021-04-27 Allegro Microsystems, Llc Integrated circuit package having a low profile
CN110631611B (zh) * 2019-09-20 2022-05-13 贵州雅光电子科技股份有限公司 一种amr传感器芯片敏感单元结构
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US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
US11800813B2 (en) 2020-05-29 2023-10-24 Allegro Microsystems, Llc High isolation current sensor
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor
US11768230B1 (en) 2022-03-30 2023-09-26 Allegro Microsystems, Llc Current sensor integrated circuit with a dual gauge lead frame
US12248039B2 (en) 2023-08-08 2025-03-11 Allegro Microsystems, Llc Interleaving sub-arrays of magnetoresistance elements based on reference directions to compensate for bridge offset

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