JP2005503648A - プラズマリアクタ・コイルマグネット・システム - Google Patents

プラズマリアクタ・コイルマグネット・システム Download PDF

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Publication number
JP2005503648A
JP2005503648A JP2003529496A JP2003529496A JP2005503648A JP 2005503648 A JP2005503648 A JP 2005503648A JP 2003529496 A JP2003529496 A JP 2003529496A JP 2003529496 A JP2003529496 A JP 2003529496A JP 2005503648 A JP2005503648 A JP 2005503648A
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JP
Japan
Prior art keywords
plasma
magnetic field
following features
chamber
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003529496A
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English (en)
Japanese (ja)
Inventor
ミトロビック、アンドレイ・エス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2005503648A publication Critical patent/JP2005503648A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
  • Physical Vapour Deposition (AREA)
JP2003529496A 2001-09-14 2002-09-04 プラズマリアクタ・コイルマグネット・システム Pending JP2005503648A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31889001P 2001-09-14 2001-09-14
PCT/US2002/027978 WO2003025971A2 (en) 2001-09-14 2002-09-04 Plasma processing apparatus with coil magnet system

Publications (1)

Publication Number Publication Date
JP2005503648A true JP2005503648A (ja) 2005-02-03

Family

ID=23239991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003529496A Pending JP2005503648A (ja) 2001-09-14 2002-09-04 プラズマリアクタ・コイルマグネット・システム

Country Status (7)

Country Link
US (1) US20040168771A1 (zh)
JP (1) JP2005503648A (zh)
KR (1) KR20040028985A (zh)
CN (1) CN1316547C (zh)
AU (1) AU2002341591A1 (zh)
TW (1) TWI293855B (zh)
WO (1) WO2003025971A2 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117690A (ja) * 2007-11-08 2009-05-28 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2010087182A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2022506256A (ja) * 2018-11-05 2022-01-17 アプライド マテリアルズ インコーポレイテッド 磁気ハウジングシステム
JP7438853B2 (ja) 2020-06-05 2024-02-27 株式会社アルバック マグネトロンスパッタリング装置
WO2024043065A1 (ja) * 2022-08-22 2024-02-29 東京エレクトロン株式会社 プラズマ処理装置、ｒｆシステム、およびｒｆ制御方法

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JP3959318B2 (ja) * 2002-08-22 2007-08-15 東京エレクトロン株式会社 プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム
US7556718B2 (en) * 2004-06-22 2009-07-07 Tokyo Electron Limited Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer
US7323400B2 (en) * 2004-08-30 2008-01-29 Micron Technology, Inc. Plasma processing, deposition and ALD methods
KR20060026321A (ko) * 2004-09-20 2006-03-23 삼성전자주식회사 플라즈마 처리 장치 및 그 제어 방법
GB0517334D0 (en) * 2005-08-24 2005-10-05 Dow Corning Method and apparatus for creating a plasma
US20090250335A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields
US8956516B2 (en) * 2009-08-31 2015-02-17 Semicat, Inc. System and apparatus to facilitate physical vapor deposition to modify non-metal films on semiconductor substrates
US8936703B2 (en) * 2009-08-31 2015-01-20 Semicat, Inc. Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition
KR100972225B1 (ko) * 2009-12-21 2010-07-23 플러스파운틴(주) 하천에 설치되는 수중분수대 및 시공방법
US8773020B2 (en) * 2010-10-22 2014-07-08 Applied Materials, Inc. Apparatus for forming a magnetic field and methods of use thereof
US9269546B2 (en) 2010-10-22 2016-02-23 Applied Materials, Inc. Plasma reactor with electron beam plasma source having a uniform magnetic field
US8617350B2 (en) * 2011-06-15 2013-12-31 Belight Technology Corporation, Limited Linear plasma system
US8884526B2 (en) * 2012-01-20 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Coherent multiple side electromagnets
US9279179B2 (en) * 2012-02-06 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi coil target design
US20130240147A1 (en) * 2012-03-19 2013-09-19 Sang Ki Nam Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
US9121540B2 (en) * 2012-11-21 2015-09-01 Southwest Research Institute Superhydrophobic compositions and coating process for the internal surface of tubular structures
US9543125B2 (en) 2013-03-15 2017-01-10 Taiwan Semiconductor Manufacturing Company Limited Directing plasma distribution in plasma-enhanced chemical vapor deposition
US11828691B2 (en) * 2017-01-27 2023-11-28 Dh Technologies Development Pte. Ltd. Electromagnetic assemblies for processing fluids
CN108575042B (zh) * 2017-03-09 2021-04-09 北京北方华创微电子装备有限公司 一种线圈、介质筒和等离子体腔室
US11037764B2 (en) 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
US11517639B2 (en) 2018-07-31 2022-12-06 L'oreal Generating cold plasma away from skin, and associated systems and methods
CN109735822B (zh) * 2018-11-14 2021-04-09 北京北方华创微电子装备有限公司 反应腔室和半导体设备
CN110076141A (zh) * 2019-04-30 2019-08-02 河南先途智能科技有限公司 一种等离子清洗装置
CN112853738B (zh) * 2021-01-05 2022-01-18 西南交通大学 一种基于电磁场调控的等离子体改性装置
CN113151809B (zh) * 2021-04-01 2022-07-22 上海征世科技股份有限公司 一种微波等离子体加工装置
WO2023214918A1 (en) * 2022-05-02 2023-11-09 Brairtech Sweden Ab A device for ionization of a fluid
CN116673273B (zh) * 2023-08-03 2023-10-27 北京奇峰蓝达光学科技发展有限公司 一种氟化钙原料表面去杂方法及其装置

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US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US4740268A (en) * 1987-05-04 1988-04-26 Motorola Inc. Magnetically enhanced plasma system
DE58907191D1 (de) * 1989-02-09 1994-04-14 Balzers Hochvakuum Verfahren zum Zentrieren eines Elektronenstrahles.
US5255024A (en) * 1993-02-22 1993-10-19 Jensen Charles W Eye drop alignment glasses
TW249313B (zh) * 1993-03-06 1995-06-11 Tokyo Electron Co
US5534108A (en) * 1993-05-28 1996-07-09 Applied Materials, Inc. Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JP3585591B2 (ja) * 1995-07-29 2004-11-04 株式会社半導体エネルギー研究所 エッチング装置及びエッチング方法
US5718795A (en) * 1995-08-21 1998-02-17 Applied Materials, Inc. Radial magnetic field enhancement for plasma processing
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US6015476A (en) * 1998-02-05 2000-01-18 Applied Materials, Inc. Plasma reactor magnet with independently controllable parallel axial current-carrying elements
WO2000037206A2 (en) * 1998-12-23 2000-06-29 Applied Science And Technology, Inc. Permanent magnet ecr plasma source with integrated multipolar magnetic confinement
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117690A (ja) * 2007-11-08 2009-05-28 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2010087182A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2022506256A (ja) * 2018-11-05 2022-01-17 アプライド マテリアルズ インコーポレイテッド 磁気ハウジングシステム
JP7448534B2 (ja) 2018-11-05 2024-03-12 アプライド マテリアルズ インコーポレイテッド 磁気ハウジングシステム
JP7438853B2 (ja) 2020-06-05 2024-02-27 株式会社アルバック マグネトロンスパッタリング装置
WO2024043065A1 (ja) * 2022-08-22 2024-02-29 東京エレクトロン株式会社 プラズマ処理装置、ｒｆシステム、およびｒｆ制御方法

Also Published As

Publication number Publication date
WO2003025971A3 (en) 2003-12-11
CN1545722A (zh) 2004-11-10
TWI293855B (en) 2008-02-21
KR20040028985A (ko) 2004-04-03
US20040168771A1 (en) 2004-09-02
WO2003025971A2 (en) 2003-03-27
AU2002341591A1 (en) 2003-04-01
CN1316547C (zh) 2007-05-16

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