JP2005501459A - 高周波電力増幅回路 - Google Patents

高周波電力増幅回路 Download PDF

Info

Publication number
JP2005501459A
JP2005501459A JP2003524111A JP2003524111A JP2005501459A JP 2005501459 A JP2005501459 A JP 2005501459A JP 2003524111 A JP2003524111 A JP 2003524111A JP 2003524111 A JP2003524111 A JP 2003524111A JP 2005501459 A JP2005501459 A JP 2005501459A
Authority
JP
Japan
Prior art keywords
transistor
stage
amplifier circuit
cascode stage
power amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003524111A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005501459A5 (enExample
Inventor
マルセル、エイチ．ダブリュ．バン、デ、ウェステルロ
シカー、シーナ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2005501459A publication Critical patent/JP2005501459A/ja
Publication of JP2005501459A5 publication Critical patent/JP2005501459A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2003524111A 2001-08-23 2002-08-02 高周波電力増幅回路 Pending JP2005501459A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01203177 2001-08-23
PCT/IB2002/003246 WO2003019774A2 (en) 2001-08-23 2002-08-02 High frequency power amplifier circuit

Publications (2)

Publication Number Publication Date
JP2005501459A true JP2005501459A (ja) 2005-01-13
JP2005501459A5 JP2005501459A5 (enExample) 2006-01-05

Family

ID=8180818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003524111A Pending JP2005501459A (ja) 2001-08-23 2002-08-02 高周波電力増幅回路

Country Status (5)

Country Link
US (1) US6838940B2 (enExample)
EP (1) EP1421679A2 (enExample)
JP (1) JP2005501459A (enExample)
CN (1) CN1280982C (enExample)
WO (1) WO2003019774A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902635B2 (en) * 2005-07-11 2011-03-08 Wisconsin Alumni Research Foundation High-power-gain, bipolar transistor amplifier
EP2073382B1 (en) * 2007-12-19 2011-04-27 Alcatel Lucent A method for signal amplification, a current switched power amplifier system, a base station, a mobile station and a communication network therefor
DE102008044845B4 (de) * 2008-08-28 2015-04-09 Epcos Ag Bias-Netzwerk
FR2959077B1 (fr) * 2010-04-19 2012-08-17 Alcatel Lucent Amplificateur a faible facteur de bruit, a gain variable et de puissance
JP5913816B2 (ja) * 2011-02-21 2016-04-27 富士通株式会社 半導体装置の製造方法
DE102012112391B4 (de) * 2012-12-17 2018-10-04 Phoenix Contact Gmbh & Co. Kg Schaltnetzteil mit einer Kaskodenschaltung
JP6187444B2 (ja) * 2014-03-20 2017-08-30 株式会社村田製作所 電力増幅モジュール
US9712125B2 (en) * 2015-02-15 2017-07-18 Skyworks Solutions, Inc. Power amplification system with shared common base biasing
FR3035285B1 (fr) * 2015-04-14 2017-05-12 St Microelectronics Grenoble 2 Circuit d'amplification de puissance de signaux radiofrequence
TWI595745B (zh) 2016-03-28 2017-08-11 立積電子股份有限公司 放大器
EP3367562A1 (en) * 2017-02-22 2018-08-29 Comet AG High power amplifier circuit with protective feedback circuit
US10608588B2 (en) * 2017-12-26 2020-03-31 Nxp Usa, Inc. Amplifiers and related integrated circuits
JP2021082960A (ja) * 2019-11-20 2021-05-27 株式会社村田製作所 電力増幅回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1547997A (en) * 1975-03-06 1979-07-04 Lucas Industries Ltd Electrical generating apparatus
CA1069209A (en) * 1975-11-25 1980-01-01 Rca Corporation Video amplifier
US4132925A (en) * 1976-06-15 1979-01-02 Forest Electric Company Direct current ballasting and starting circuitry for gaseous discharge lamps
NL8901725A (nl) * 1989-07-06 1991-02-01 Philips Nv Versterkerschakeling.
US5742205A (en) * 1995-07-27 1998-04-21 Scientific-Atlanta, Inc. Field effect transistor cable television line amplifier
FR2762727B1 (fr) * 1997-04-24 1999-07-16 Sgs Thomson Microelectronics Circuit integre avec etage de sortie haute tension
US6011438A (en) * 1997-11-27 2000-01-04 Nec Corporation Push-pull wideband semiconductor amplifier
JP2003524319A (ja) * 1999-10-01 2003-08-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 増幅器

Also Published As

Publication number Publication date
WO2003019774A2 (en) 2003-03-06
US20030048138A1 (en) 2003-03-13
US6838940B2 (en) 2005-01-04
CN1552121A (zh) 2004-12-01
CN1280982C (zh) 2006-10-18
EP1421679A2 (en) 2004-05-26
WO2003019774A3 (en) 2004-02-26

Similar Documents

Publication Publication Date Title
JP4206589B2 (ja) 分布増幅器
US7414821B2 (en) Semiconductor integrated circuit device
CN110521114B (zh) 半导体装置
US5920230A (en) HEMT-HBT cascode distributed amplifier
JP2004515937A (ja) カスコード・ブートストラップ・アナログ電力増幅回路
JP2005501459A (ja) 高周波電力増幅回路
US11658622B2 (en) Power amplifier circuit
JP2005501459A5 (enExample)
US20080285195A1 (en) Integrated circuit with protection against electrostatic damage
US5694085A (en) High-power amplifier using parallel transistors
US6262631B1 (en) Silicon power bipolar junction transistor with an integrated linearizer
US7439805B1 (en) Enhancement-depletion Darlington device
US7358817B2 (en) Linearized bias circuit with adaptation
US20110038087A1 (en) Discharge protection apparatus and method of protecting an electronic device
US11381204B2 (en) Power amplifier circuit
US7135931B2 (en) Negative conductance power amplifier
US11070176B2 (en) Amplifier linearization and related apparatus thereof
JPWO2000067323A1 (ja) 静電破壊保護回路を有する半導体集積回路
US11469715B2 (en) Power amplifier circuit
US6998920B2 (en) Monolithically fabricated HBT amplification stage with current limiting FET
US6424224B1 (en) Auxiliary circuitry for monolithic microwave integrated circuit
US6529081B1 (en) Method of operating a solid state power amplifying device
JPH09162657A (ja) マイクロ波電力増幅回路
JPH10173136A (ja) 保護回路
US20240162898A1 (en) Power switch device with cascode structure and the forming method thereof

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050801

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050801

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080125

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080425

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080507

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090630