FR2959077B1 - Amplificateur a faible facteur de bruit, a gain variable et de puissance - Google Patents

Amplificateur a faible facteur de bruit, a gain variable et de puissance

Info

Publication number
FR2959077B1
FR2959077B1 FR1052956A FR1052956A FR2959077B1 FR 2959077 B1 FR2959077 B1 FR 2959077B1 FR 1052956 A FR1052956 A FR 1052956A FR 1052956 A FR1052956 A FR 1052956A FR 2959077 B1 FR2959077 B1 FR 2959077B1
Authority
FR
France
Prior art keywords
amplifier
power
low noise
variable gain
noise factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1052956A
Other languages
English (en)
Other versions
FR2959077A1 (fr
Inventor
Pascal Roux
Yves Baeyens
Muriel Gohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Lucent SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1052956A priority Critical patent/FR2959077B1/fr
Application filed by Alcatel Lucent SAS filed Critical Alcatel Lucent SAS
Priority to CN201180020120.2A priority patent/CN102859867B/zh
Priority to PCT/EP2011/056139 priority patent/WO2011131625A1/fr
Priority to US13/641,789 priority patent/US8928414B2/en
Priority to JP2013505437A priority patent/JP5774090B2/ja
Priority to EP11714576A priority patent/EP2561612A1/fr
Priority to KR1020127028974A priority patent/KR101505821B1/ko
Publication of FR2959077A1 publication Critical patent/FR2959077A1/fr
Application granted granted Critical
Publication of FR2959077B1 publication Critical patent/FR2959077B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
FR1052956A 2010-04-19 2010-04-19 Amplificateur a faible facteur de bruit, a gain variable et de puissance Active FR2959077B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1052956A FR2959077B1 (fr) 2010-04-19 2010-04-19 Amplificateur a faible facteur de bruit, a gain variable et de puissance
PCT/EP2011/056139 WO2011131625A1 (fr) 2010-04-19 2011-04-18 Amplificateur de puissance à faible facteur de bruit et à gain variable en tension
US13/641,789 US8928414B2 (en) 2010-04-19 2011-04-18 Power amplifier with low noise figure and voltage variable gain
JP2013505437A JP5774090B2 (ja) 2010-04-19 2011-04-18 低雑音指数および電圧可変利得を有する電力増幅器
CN201180020120.2A CN102859867B (zh) 2010-04-19 2011-04-18 具有低噪声系数和电压可变增益的功率放大器
EP11714576A EP2561612A1 (fr) 2010-04-19 2011-04-18 Amplificateur de puissance à faible facteur de bruit et à gain variable en tension
KR1020127028974A KR101505821B1 (ko) 2010-04-19 2011-04-18 저 잡음 지수 및 전압 가변 이득을 갖는 전력 증폭기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052956A FR2959077B1 (fr) 2010-04-19 2010-04-19 Amplificateur a faible facteur de bruit, a gain variable et de puissance

Publications (2)

Publication Number Publication Date
FR2959077A1 FR2959077A1 (fr) 2011-10-21
FR2959077B1 true FR2959077B1 (fr) 2012-08-17

Family

ID=43242406

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052956A Active FR2959077B1 (fr) 2010-04-19 2010-04-19 Amplificateur a faible facteur de bruit, a gain variable et de puissance

Country Status (7)

Country Link
US (1) US8928414B2 (fr)
EP (1) EP2561612A1 (fr)
JP (1) JP5774090B2 (fr)
KR (1) KR101505821B1 (fr)
CN (1) CN102859867B (fr)
FR (1) FR2959077B1 (fr)
WO (1) WO2011131625A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3059870A4 (fr) * 2013-10-18 2016-11-02 Fujitsu Ltd Circuit intégré à semi-conducteurs et émetteur sans fil
CN103580615B (zh) * 2013-10-22 2016-06-29 中国科学院半导体研究所 信号放大电路
JP5854289B2 (ja) * 2013-11-11 2016-02-09 株式会社村田製作所 電力増幅モジュール
US9998075B1 (en) 2017-01-25 2018-06-12 Psemi Corporation LDO with fast recovery from saturation
JP6797041B2 (ja) * 2017-01-31 2020-12-09 三菱電機株式会社 低雑音増幅器
US10277168B2 (en) 2017-03-06 2019-04-30 Psemi Corporation Stacked power amplifier power control
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10778159B2 (en) 2017-11-20 2020-09-15 Murata Manufacturing Co., Ltd. Power amplifier and compound semiconductor device
JP2019097152A (ja) 2017-11-20 2019-06-20 株式会社村田製作所 電力増幅器及び化合物半導体装置
JP6937272B2 (ja) * 2018-06-29 2021-09-22 株式会社東芝 高周波増幅回路
US10862429B2 (en) 2019-01-09 2020-12-08 Silanna Asia Pte Ltd Apparatus for optimized turn-off of a cascode amplifier
CN112671360A (zh) * 2020-12-30 2021-04-16 四川长虹电器股份有限公司 多通道可控增益放大器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1052956A (fr) 1952-03-18 1954-01-29 Perfectionnement à la coulée des métaux ferreux et non ferreux
US3541234A (en) * 1967-10-20 1970-11-17 Rca Corp Video circuits employing cascoded combinations of field effect transistors with high voltage,low bandwidth bipolar transistors
GB1582138A (en) * 1976-07-19 1980-12-31 Rca Corp Video amplifier circuit
JPS6220406A (ja) * 1985-07-19 1987-01-29 Nec Home Electronics Ltd Ｍｕｓｅ方式用自動利得制御装置
US4891605A (en) * 1986-08-13 1990-01-02 Tirkel Anatol Z Adaptive gain control amplifier
US4754233A (en) * 1987-06-22 1988-06-28 Motorola, Inc. Low noise ultra high frequency amplifier having automatic gain control
US5838031A (en) 1996-03-05 1998-11-17 Trw Inc. Low noise-high linearity HEMT-HBT composite
US5742902A (en) * 1996-03-29 1998-04-21 Gmi Holdings, Inc. Super-regenerative circuit apparatus for a door operator receiver and door operator incorporating the same
JPH1174742A (ja) 1997-08-27 1999-03-16 Denso Corp オペアンプ
US5920230A (en) * 1997-10-21 1999-07-06 Trw Inc. HEMT-HBT cascode distributed amplifier
US6046640A (en) * 1997-11-07 2000-04-04 Analog Devices, Inc. Switched-gain cascode amplifier using loading network for gain control
JP3523139B2 (ja) * 2000-02-07 2004-04-26 日本電気株式会社 可変利得回路
US6801089B2 (en) * 2001-05-04 2004-10-05 Sequoia Communications Continuous variable-gain low-noise amplifier
CN1280982C (zh) * 2001-08-23 2006-10-18 皇家飞利浦电子股份有限公司 高频功率放大器电路
JP2004022737A (ja) 2002-06-14 2004-01-22 Matsushita Electric Ind Co Ltd 半導体キャパシタ、およびそれを用いた高周波増幅装置
JP4273729B2 (ja) * 2002-09-18 2009-06-03 ソニー株式会社 可変利得増幅器
JP2004172956A (ja) 2002-11-20 2004-06-17 Sony Corp 低雑音増幅器および受信回路
JP2004172936A (ja) * 2002-11-20 2004-06-17 Alps Electric Co Ltd テレビジョンチューナの広帯域前置増幅器
JP4008451B2 (ja) * 2004-03-25 2007-11-14 シャープ株式会社 カスコード接続増幅回路及びそれを用いた通信装置
JP2005311689A (ja) 2004-04-21 2005-11-04 Sharp Corp 高耐圧力スコード型増幅回路
US7902635B2 (en) * 2005-07-11 2011-03-08 Wisconsin Alumni Research Foundation High-power-gain, bipolar transistor amplifier

Also Published As

Publication number Publication date
WO2011131625A1 (fr) 2011-10-27
KR101505821B1 (ko) 2015-03-25
JP5774090B2 (ja) 2015-09-02
JP2013526169A (ja) 2013-06-20
EP2561612A1 (fr) 2013-02-27
KR20130023239A (ko) 2013-03-07
US8928414B2 (en) 2015-01-06
CN102859867A (zh) 2013-01-02
FR2959077A1 (fr) 2011-10-21
US20130093520A1 (en) 2013-04-18
CN102859867B (zh) 2015-08-12

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Legal Events

Date Code Title Description
GC Lien (pledge) constituted

Effective date: 20131018

RG Lien (pledge) cancelled

Effective date: 20141016

CA Change of address

Effective date: 20150521

CA Change of address

Effective date: 20150521

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8