JP2005501381A5 - - Google Patents

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Publication number
JP2005501381A5
JP2005501381A5 JP2003522973A JP2003522973A JP2005501381A5 JP 2005501381 A5 JP2005501381 A5 JP 2005501381A5 JP 2003522973 A JP2003522973 A JP 2003522973A JP 2003522973 A JP2003522973 A JP 2003522973A JP 2005501381 A5 JP2005501381 A5 JP 2005501381A5
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JP
Japan
Prior art keywords
ion
gap
ions
electric field
forming
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Application number
JP2003522973A
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English (en)
Japanese (ja)
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JP2005501381A (ja
JP4378618B2 (ja
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Priority claimed from PCT/US2002/026903 external-priority patent/WO2003019612A1/en
Publication of JP2005501381A publication Critical patent/JP2005501381A/ja
Publication of JP2005501381A5 publication Critical patent/JP2005501381A5/ja
Application granted granted Critical
Publication of JP4378618B2 publication Critical patent/JP4378618B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003522973A 2001-08-23 2002-08-23 イオン注入システムにおいてイオンを集群するためのスリット二重ギャップ集群器およびその方法 Expired - Fee Related JP4378618B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31441701P 2001-08-23 2001-08-23
PCT/US2002/026903 WO2003019612A1 (en) 2001-08-23 2002-08-23 Split double gap buncher and method for ion bunching in an ion implantation system

Publications (3)

Publication Number Publication Date
JP2005501381A JP2005501381A (ja) 2005-01-13
JP2005501381A5 true JP2005501381A5 (enExample) 2005-11-17
JP4378618B2 JP4378618B2 (ja) 2009-12-09

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ID=23219874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003522973A Expired - Fee Related JP4378618B2 (ja) 2001-08-23 2002-08-23 イオン注入システムにおいてイオンを集群するためのスリット二重ギャップ集群器およびその方法

Country Status (7)

Country Link
US (1) US6635890B2 (enExample)
EP (1) EP1419514B1 (enExample)
JP (1) JP4378618B2 (enExample)
CN (1) CN1545720A (enExample)
DE (1) DE60230290D1 (enExample)
TW (1) TW569274B (enExample)
WO (1) WO2003019612A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7273835B2 (en) * 2004-08-04 2007-09-25 Honeywell International Inc. Azeotrope-like compositions of difluoromethane
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
ATE537550T1 (de) 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
US7402821B2 (en) * 2006-01-18 2008-07-22 Axcelis Technologies, Inc. Application of digital frequency and phase synthesis for control of electrode voltage phase in a high-energy ion implantation machine, and a means for accurate calibration of electrode voltage phase
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
KR100755070B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 번들 빔을 이용한 불균일 이온주입장치 및 방법
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
CN103906339A (zh) * 2013-09-28 2014-07-02 中国科学院近代物理研究所 离子加速器注入装置及使用方法
JP6242314B2 (ja) * 2014-09-11 2017-12-06 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオンビームの調整方法
CN104703380B (zh) * 2015-02-11 2017-12-19 中国科学院近代物理研究所 单腔多束型漂移管离子加速装置
US10763071B2 (en) 2018-06-01 2020-09-01 Varian Semiconductor Equipment Associates, Inc. Compact high energy ion implantation system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
US10804068B2 (en) * 2018-11-20 2020-10-13 Applied Materials, Inc. Electostatic filter and method for controlling ion beam properties using electrostatic filter
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager
CN115985740B (zh) * 2022-11-17 2025-06-10 浙江工业大学 一种利用激光电离注入获得电子微聚束的方法
CN116031126B (zh) * 2022-12-27 2025-09-23 北京烁科中科信电子装备有限公司 一种高能离子注入机的聚束谐振装置
CN117596764B (zh) * 2023-11-17 2024-08-13 中国科学院近代物理研究所 一种交叉指型h模射频四极加速器及加速系统
CN118712039B (zh) * 2024-08-29 2024-12-20 青岛四方思锐智能技术有限公司 变径聚焦组件、射频加速段及离子注入机

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2442505A1 (fr) * 1978-11-23 1980-06-20 Commissariat Energie Atomique Groupeur-degroupeur de faisceau d'ions a intervalles dissymetriques et fonctionnant dans une large gamme de vitesse
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4667111C1 (en) 1985-05-17 2001-04-10 Eaton Corp Cleveland Accelerator for ion implantation
US4712042A (en) 1986-02-03 1987-12-08 Accsys Technology, Inc. Variable frequency RFQ linear accelerator
US5189302A (en) 1991-10-28 1993-02-23 The United States Of America As Represented By The United States Department Of Energy Small system for tritium accelerator mass spectrometry
US5339336A (en) 1993-02-17 1994-08-16 Cornell Research Foundation, Inc. High current ion ring accelerator
US5504341A (en) 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5637879A (en) * 1996-03-20 1997-06-10 Schueler; Bruno W. Focused ion beam column with electrically variable blanking aperture
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5998798A (en) 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
TW523796B (en) * 2000-12-28 2003-03-11 Axcelis Tech Inc Method and apparatus for improved ion acceleration in an ion implantation system
US6583429B2 (en) * 2001-08-23 2003-06-24 Axcelis Technologies, Inc. Method and apparatus for improved ion bunching in an ion implantation system

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