CN1545720A - 细缝双间隙聚束器以及用于离子注入系统中离子聚束的方法 - Google Patents

细缝双间隙聚束器以及用于离子注入系统中离子聚束的方法 Download PDF

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Publication number
CN1545720A
CN1545720A CNA028162749A CN02816274A CN1545720A CN 1545720 A CN1545720 A CN 1545720A CN A028162749 A CNA028162749 A CN A028162749A CN 02816274 A CN02816274 A CN 02816274A CN 1545720 A CN1545720 A CN 1545720A
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CN
China
Prior art keywords
ion
electrode
gap
ions
buncher
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028162749A
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English (en)
Chinese (zh)
Inventor
K・萨亚达特曼德
K·萨亚达特曼德
ぜ利奥
W·迪韦吉利奥
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of CN1545720A publication Critical patent/CN1545720A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
CNA028162749A 2001-08-23 2002-08-23 细缝双间隙聚束器以及用于离子注入系统中离子聚束的方法 Pending CN1545720A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31441701P 2001-08-23 2001-08-23
US60/314,417 2001-08-23

Publications (1)

Publication Number Publication Date
CN1545720A true CN1545720A (zh) 2004-11-10

Family

ID=23219874

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028162749A Pending CN1545720A (zh) 2001-08-23 2002-08-23 细缝双间隙聚束器以及用于离子注入系统中离子聚束的方法

Country Status (7)

Country Link
US (1) US6635890B2 (enExample)
EP (1) EP1419514B1 (enExample)
JP (1) JP4378618B2 (enExample)
CN (1) CN1545720A (enExample)
DE (1) DE60230290D1 (enExample)
TW (1) TW569274B (enExample)
WO (1) WO2003019612A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428193A (zh) * 2014-09-11 2016-03-23 住友重机械离子技术有限公司 离子注入装置及离子束的调整方法
CN113169008A (zh) * 2018-11-20 2021-07-23 应用材料股份有限公司 静电过滤器以及使用静电过滤器控制离子束性质的方法
CN115985740A (zh) * 2022-11-17 2023-04-18 浙江工业大学 一种利用激光电离注入获得电子微聚束的方法
CN116031126A (zh) * 2022-12-27 2023-04-28 北京烁科中科信电子装备有限公司 一种高能离子注入机的聚束谐振装置
CN117596764A (zh) * 2023-11-17 2024-02-23 中国科学院近代物理研究所 一种交叉指型h模射频四极加速器及加速系统
CN118712039A (zh) * 2024-08-29 2024-09-27 青岛四方思锐智能技术有限公司 变径聚焦组件、射频加速段及离子注入机

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US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7273835B2 (en) * 2004-08-04 2007-09-25 Honeywell International Inc. Azeotrope-like compositions of difluoromethane
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
ATE537550T1 (de) 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
US7402821B2 (en) * 2006-01-18 2008-07-22 Axcelis Technologies, Inc. Application of digital frequency and phase synthesis for control of electrode voltage phase in a high-energy ion implantation machine, and a means for accurate calibration of electrode voltage phase
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
KR100755070B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 번들 빔을 이용한 불균일 이온주입장치 및 방법
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
CN103906339A (zh) * 2013-09-28 2014-07-02 中国科学院近代物理研究所 离子加速器注入装置及使用方法
CN104703380B (zh) * 2015-02-11 2017-12-19 中国科学院近代物理研究所 单腔多束型漂移管离子加速装置
US10763071B2 (en) 2018-06-01 2020-09-01 Varian Semiconductor Equipment Associates, Inc. Compact high energy ion implantation system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager

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FR2442505A1 (fr) * 1978-11-23 1980-06-20 Commissariat Energie Atomique Groupeur-degroupeur de faisceau d'ions a intervalles dissymetriques et fonctionnant dans une large gamme de vitesse
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
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US4712042A (en) 1986-02-03 1987-12-08 Accsys Technology, Inc. Variable frequency RFQ linear accelerator
US5189302A (en) 1991-10-28 1993-02-23 The United States Of America As Represented By The United States Department Of Energy Small system for tritium accelerator mass spectrometry
US5339336A (en) 1993-02-17 1994-08-16 Cornell Research Foundation, Inc. High current ion ring accelerator
US5504341A (en) 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5637879A (en) * 1996-03-20 1997-06-10 Schueler; Bruno W. Focused ion beam column with electrically variable blanking aperture
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5998798A (en) 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
TW523796B (en) * 2000-12-28 2003-03-11 Axcelis Tech Inc Method and apparatus for improved ion acceleration in an ion implantation system
US6583429B2 (en) * 2001-08-23 2003-06-24 Axcelis Technologies, Inc. Method and apparatus for improved ion bunching in an ion implantation system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428193A (zh) * 2014-09-11 2016-03-23 住友重机械离子技术有限公司 离子注入装置及离子束的调整方法
CN105428193B (zh) * 2014-09-11 2018-08-10 住友重机械离子技术有限公司 离子注入装置及离子束的调整方法
TWI649776B (zh) * 2014-09-11 2019-02-01 日商住友重機械離子技術有限公司 Ion implantation device and ion beam adjustment method
CN113169008A (zh) * 2018-11-20 2021-07-23 应用材料股份有限公司 静电过滤器以及使用静电过滤器控制离子束性质的方法
CN113169008B (zh) * 2018-11-20 2023-12-19 应用材料股份有限公司 用于控制离子束的方法及设备及高束弯曲静电过滤器总成
CN115985740A (zh) * 2022-11-17 2023-04-18 浙江工业大学 一种利用激光电离注入获得电子微聚束的方法
CN116031126A (zh) * 2022-12-27 2023-04-28 北京烁科中科信电子装备有限公司 一种高能离子注入机的聚束谐振装置
CN116031126B (zh) * 2022-12-27 2025-09-23 北京烁科中科信电子装备有限公司 一种高能离子注入机的聚束谐振装置
CN117596764A (zh) * 2023-11-17 2024-02-23 中国科学院近代物理研究所 一种交叉指型h模射频四极加速器及加速系统
CN118712039A (zh) * 2024-08-29 2024-09-27 青岛四方思锐智能技术有限公司 变径聚焦组件、射频加速段及离子注入机

Also Published As

Publication number Publication date
TW569274B (en) 2004-01-01
EP1419514B1 (en) 2008-12-10
US6635890B2 (en) 2003-10-21
JP2005501381A (ja) 2005-01-13
JP4378618B2 (ja) 2009-12-09
EP1419514A1 (en) 2004-05-19
WO2003019612A1 (en) 2003-03-06
US20030038254A1 (en) 2003-02-27
DE60230290D1 (de) 2009-01-22

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