JP2005500702A - ガラスビーズのコーティング方法 - Google Patents
ガラスビーズのコーティング方法 Download PDFInfo
- Publication number
- JP2005500702A JP2005500702A JP2003523021A JP2003523021A JP2005500702A JP 2005500702 A JP2005500702 A JP 2005500702A JP 2003523021 A JP2003523021 A JP 2003523021A JP 2003523021 A JP2003523021 A JP 2003523021A JP 2005500702 A JP2005500702 A JP 2005500702A
- Authority
- JP
- Japan
- Prior art keywords
- film
- texturing
- silicon
- particles
- textured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 27
- 238000000576 coating method Methods 0.000 title claims description 7
- 239000011324 bead Substances 0.000 title description 2
- 239000002245 particle Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 210000004027 cell Anatomy 0.000 claims abstract description 14
- 210000001616 monocyte Anatomy 0.000 claims abstract description 11
- 238000007598 dipping method Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 97
- 239000010410 layer Substances 0.000 claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- 238000001723 curing Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 239000012528 membrane Substances 0.000 abstract description 2
- 239000000499 gel Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000003980 solgel method Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004313 glare Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 gold organic compound Chemical class 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPR7198A AUPR719801A0 (en) | 2001-08-23 | 2001-08-23 | Glass beads coating process |
| PCT/AU2002/001124 WO2003019676A1 (en) | 2001-08-23 | 2002-08-20 | Glass beads coating process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005500702A true JP2005500702A (ja) | 2005-01-06 |
| JP2005500702A5 JP2005500702A5 (https=) | 2009-07-02 |
Family
ID=3831151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003523021A Pending JP2005500702A (ja) | 2001-08-23 | 2002-08-20 | ガラスビーズのコーティング方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7517552B2 (https=) |
| EP (1) | EP1428270A4 (https=) |
| JP (1) | JP2005500702A (https=) |
| AU (1) | AUPR719801A0 (https=) |
| WO (1) | WO2003019676A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011515216A (ja) * | 2008-03-25 | 2011-05-19 | コーニング インコーポレイテッド | 基板のコーティング方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006046397A1 (ja) * | 2004-10-28 | 2008-05-22 | 株式会社カネカ | 薄膜光電変換装置用基板およびそれを用いた集積型薄膜光電変換装置 |
| US7635600B2 (en) * | 2005-11-16 | 2009-12-22 | Sharp Laboratories Of America, Inc. | Photovoltaic structure with a conductive nanowire array electrode |
| FR2915834B1 (fr) * | 2007-05-04 | 2009-12-18 | Saint Gobain | Substrat transparent muni d'une couche electrode perfectionnee |
| US20080276990A1 (en) * | 2007-05-10 | 2008-11-13 | Board Of Regents, University Of Texas System | Substrate surface structures and processes for forming the same |
| US20090242019A1 (en) * | 2007-12-19 | 2009-10-01 | Silexos, Inc | Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping |
| KR20110036060A (ko) * | 2008-08-05 | 2011-04-06 | 아사히 가라스 가부시키가이샤 | 투명 도전막 기판 및 이 기판을 사용한 태양 전지 |
| TWI408815B (zh) * | 2009-05-18 | 2013-09-11 | Ind Tech Res Inst | 薄膜太陽能電池導電基板 |
| US20110126890A1 (en) * | 2009-11-30 | 2011-06-02 | Nicholas Francis Borrelli | Textured superstrates for photovoltaics |
| US8663732B2 (en) | 2010-02-26 | 2014-03-04 | Corsam Technologies Llc | Light scattering inorganic substrates using monolayers |
| US20110209752A1 (en) * | 2010-02-26 | 2011-09-01 | Glenn Eric Kohnke | Microstructured glass substrates |
| US9085484B2 (en) | 2010-04-30 | 2015-07-21 | Corning Incorporated | Anti-glare surface treatment method and articles thereof |
| FR2959870B1 (fr) * | 2010-05-06 | 2012-05-18 | Commissariat Energie Atomique | Cellule photovoltaique comportant une zone suspendue par un motif conducteur et procede de realisation. |
| US20110290314A1 (en) * | 2010-05-28 | 2011-12-01 | Andrey Kobyakov | Light scattering articles using hemispherical particles |
| WO2012030696A1 (en) * | 2010-08-31 | 2012-03-08 | Corning Incorporated | Process for particle doping of scattering superstrates |
| TW201436263A (zh) * | 2013-01-25 | 2014-09-16 | Corsam Technologies Llc | 光伏雙重紋理化玻璃 |
| CN113644151B (zh) * | 2020-05-11 | 2024-03-08 | 苏州阿特斯阳光电力科技有限公司 | 光伏组件及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60176947A (ja) * | 1984-02-21 | 1985-09-11 | Nippon Sheet Glass Co Ltd | 酸化珪素被膜の製造方法 |
| JPH0697475A (ja) * | 1992-09-11 | 1994-04-08 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
| JPH11274536A (ja) * | 1998-03-26 | 1999-10-08 | Mitsubishi Chemical Corp | 太陽電池用基板 |
| WO2000028603A1 (en) * | 1998-11-06 | 2000-05-18 | Pacific Solar Pty. Limited | TEXTURING OF GLASS BY SiO2 FILM |
| JP2002365403A (ja) * | 2001-06-11 | 2002-12-18 | Nippon Sheet Glass Co Ltd | 低反射膜およびこれを用いた透明積層体 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| US5306646A (en) * | 1992-12-23 | 1994-04-26 | Martin Marietta Energy Systems, Inc. | Method for producing textured substrates for thin-film photovoltaic cells |
| JPH08153882A (ja) * | 1994-11-30 | 1996-06-11 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
| JPH09248507A (ja) * | 1996-03-15 | 1997-09-22 | Toray Ind Inc | ディップコーティング装置 |
| JP3998746B2 (ja) * | 1996-11-28 | 2007-10-31 | 財団法人川村理化学研究所 | オキソチタニウムフタロシアニン配向膜及びその製造方法 |
| JPH11197570A (ja) * | 1998-01-09 | 1999-07-27 | Konica Corp | 塗布方法及び塗布装置 |
| JP3641780B2 (ja) * | 2000-03-22 | 2005-04-27 | ナノックス株式会社 | 液晶表示装置 |
-
2001
- 2001-08-23 AU AUPR7198A patent/AUPR719801A0/en not_active Abandoned
-
2002
- 2002-08-20 US US10/487,580 patent/US7517552B2/en not_active Expired - Fee Related
- 2002-08-20 EP EP02753933A patent/EP1428270A4/en not_active Withdrawn
- 2002-08-20 JP JP2003523021A patent/JP2005500702A/ja active Pending
- 2002-08-20 WO PCT/AU2002/001124 patent/WO2003019676A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60176947A (ja) * | 1984-02-21 | 1985-09-11 | Nippon Sheet Glass Co Ltd | 酸化珪素被膜の製造方法 |
| JPH0697475A (ja) * | 1992-09-11 | 1994-04-08 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
| JPH11274536A (ja) * | 1998-03-26 | 1999-10-08 | Mitsubishi Chemical Corp | 太陽電池用基板 |
| WO2000028603A1 (en) * | 1998-11-06 | 2000-05-18 | Pacific Solar Pty. Limited | TEXTURING OF GLASS BY SiO2 FILM |
| JP2002365403A (ja) * | 2001-06-11 | 2002-12-18 | Nippon Sheet Glass Co Ltd | 低反射膜およびこれを用いた透明積層体 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011515216A (ja) * | 2008-03-25 | 2011-05-19 | コーニング インコーポレイテッド | 基板のコーティング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1428270A4 (en) | 2009-06-03 |
| WO2003019676A1 (en) | 2003-03-06 |
| US7517552B2 (en) | 2009-04-14 |
| EP1428270A1 (en) | 2004-06-16 |
| US20040245212A1 (en) | 2004-12-09 |
| AUPR719801A0 (en) | 2001-09-13 |
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