JP2005354045A5 - - Google Patents

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JP2005354045A5
JP2005354045A5 JP2005137274A JP2005137274A JP2005354045A5 JP 2005354045 A5 JP2005354045 A5 JP 2005354045A5 JP 2005137274 A JP2005137274 A JP 2005137274A JP 2005137274 A JP2005137274 A JP 2005137274A JP 2005354045 A5 JP2005354045 A5 JP 2005354045A5
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iii nitride
group iii
emitting device
semiconductor
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本発明は上記従来技術の問題点を解決するためになされたものであり、本発明の目的は、駆動電圧が低く、かつ逆電圧が十分に高い発光素子を収率良く得ることができるIII族窒化物p型半導体およびその製造方法を提供するものである。 The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a light emitting device having a low driving voltage and a sufficiently high reverse voltage in a high yield. method for manufacturing a nitride p-type semiconductor and its is intended to provide.

(1)p型ドーパントの濃度の1/5よりも多く、かつp型ドーパントの濃度よりも少ない量の水素原子を含有することを特徴とするIII族窒化物p型半導体。 (1) A group III nitride p-type semiconductor containing hydrogen atoms in an amount greater than 1/5 of the concentration of the p-type dopant and less than the concentration of the p-type dopant.

(2)電気抵抗率が20Ωcm〜10000Ωcmであることを特徴とする上記1項に記載のIII族窒化物p型半導体。 (2) The group III nitride p-type semiconductor according to the above item 1, wherein the electrical resistivity is 20 Ωcm to 10000 Ωcm.

(3)p型ドーパントを含むIII族窒化物半導体を成長させた後降温する際に、成長終了時の温度と同じ温度にて、成長終了直後からキャリアガスに不活性ガスを用い、かつ窒素源の流量を減少し、その後の降温過程の途中、700〜950℃の温度で窒素源の供給を停止することを特徴とする上記1または2項に記載のIII族窒化物p型半導体の製造方法。 (3) When the temperature is lowered after growing a group III nitride semiconductor containing a p-type dopant, an inert gas is used as a carrier gas immediately after the growth at the same temperature as the temperature at the end of the growth, and a nitrogen source 3. The method for producing a group III nitride p-type semiconductor according to claim 1 or 2, wherein the supply of the nitrogen source is stopped at a temperature of 700 to 950 ° C. during the subsequent temperature lowering process. .

(4)成長終了時の温度が900℃以上であることを特徴とする上記3項に記載の製造方法。 (4) The manufacturing method as described in the above item (3), wherein the temperature at the end of growth is 900 ° C. or higher.

(5)窒素源がアンモニアガスであることを特徴とする上記3または4項に記載の製造方法。 (5) The production method as described in (3) or (4) above, wherein the nitrogen source is ammonia gas.

(6)半導体成長時のキャリアガスが水素ガスを含有していることを特徴とする上記3〜5項のいずれか一項に記載の製造方法。 (6) The manufacturing method according to any one of (3) to (5) above, wherein the carrier gas at the time of semiconductor growth contains hydrogen gas.

(7)減少後の窒素源の流量が全ガス体積中の0.001〜10%であることを特徴とする上記3〜6項のいずれか一項に記載の製造方法。 (7) The production method according to any one of (3) to (6) above, wherein the flow rate of the nitrogen source after reduction is 0.001 to 10% in the total gas volume.

(8)基板上にIII族窒化物半導体からなるn型層、発光層およびp型層を有し、n型層およびp型層に負極および正極がそれぞれ設けられたIII族窒化物半導体発光素子において、p型層が上記1または2項に記載のIII族窒化物p型半導体であることを特徴とするIII族窒化物半導体発光素子。 (8) A group III nitride semiconductor light emitting device having an n-type layer, a light emitting layer, and a p type layer made of a group III nitride semiconductor on a substrate, and a negative electrode and a positive electrode provided on the n type layer and the p type layer, respectively. A group III nitride semiconductor light-emitting device, wherein the p-type layer is the group III nitride p-type semiconductor described in 1 or 2 above.

(9)正極がPd、Pt、Rh、Os、IrおよびRuから選ばれた白金族金属を正極材料として使用していることを特徴とする上記8項に記載の発光素子。 (9) The light emitting device as described in (8) above, wherein the positive electrode uses a platinum group metal selected from Pd, Pt, Rh, Os, Ir and Ru as the positive electrode material.

(10)発光素子がフリップチップ型であることを特徴とする上記8または9項に記載の発光素子。 (10) The light emitting device as described in 8 or 9 above, wherein the light emitting device is a flip chip type.

(11)発光素子がフェイスアップ型であることを特徴とする上記8または9項に記載の発光素子。 (11) The light emitting device as described in 8 or 9 above, wherein the light emitting device is a face-up type.

本発明のIII族窒化物p型半導体におけるIII族窒化物半導体には、GaNの他、InN、AlNなどの2元系混晶、InGaN、AlGaNなどの3元系混晶、InAlGaNなどの4元系混晶等が全て含まれる。本発明においてはさらに、窒素以外のV族元素を含む、GaPN、GaNAsなどの3元混晶や、これにInやAlを含むInGaPN、InGaAsN、AlGaPN、AlGaAsNなどの4元混晶、更にIn、Alの両方を含むAlInGaPN、AlInGaAsNや、PとAsの両方を含むAlGaPAsN、InGaPAsNなどの5元混晶、そして全ての元素を含むAlInGaPAsNの6元混晶も、III族窒化物半導体に含まれる。 The group III nitride semiconductor in the group III nitride p-type semiconductor of the present invention includes GaN, binary mixed crystals such as InN and AlN, ternary mixed crystals such as InGaN and AlGaN, and quaternary such as InAlGaN. All mixed crystals are included. Further, in the present invention, a ternary mixed crystal such as GaPN or GaNAs containing a group V element other than nitrogen, a quaternary mixed crystal such as InGaPN, InGaAsN, AlGaPN, or AlGaAsN containing In or Al, further In, A ternary mixed crystal such as AlInGaPN, AlInGaAsN containing both Al, AlGaPAsN containing both P and As, and InGaPAsN, and a ternary mixed crystal of AlInGaPAsN containing all elements are also included in the group III nitride semiconductor.

Claims (11)

p型ドーパントの濃度の1/5よりも多く、かつp型ドーパントの濃度よりも少ない量の水素原子を含有することを特徴とするIII族窒化物p型半導体。A group III nitride p-type semiconductor comprising hydrogen atoms in an amount greater than 1/5 of the concentration of the p-type dopant and less than the concentration of the p-type dopant. 電気抵抗率が20Ωcm〜10000Ωcmであることを特徴とする請求項1に記載のIII族窒化物p型半導体。The group III nitride p-type semiconductor according to claim 1, wherein the electrical resistivity is 20 Ωcm to 10000 Ωcm. p型ドーパントを含むIII族窒化物半導体を成長させた後降温する際に、成長終了時の温度と同じ温度にて、成長終了直後からキャリアガスに不活性ガスを用い、かつ窒素源の流量を減少し、その後の降温過程の途中、700〜950℃の温度で窒素源の供給を停止することを特徴とする請求項1または2に記載のIII族窒化物p型半導体の製造方法。When the temperature is lowered after the growth of the group III nitride semiconductor containing the p-type dopant, an inert gas is used as the carrier gas immediately after the growth at the same temperature as the temperature at the end of the growth, and the flow rate of the nitrogen source is changed. 3. The method for producing a group III nitride p-type semiconductor according to claim 1, wherein the supply of the nitrogen source is stopped at a temperature of 700 to 950 ° C. during the subsequent temperature lowering process. 成長終了時の温度が900℃以上であることを特徴とする請求項3に記載の製造方法。The manufacturing method according to claim 3, wherein the temperature at the end of growth is 900 ° C. or more. 窒素源がアンモニアガスであることを特徴とする請求項3または4に記載の製造方法。The production method according to claim 3 or 4, wherein the nitrogen source is ammonia gas. 半導体成長時のキャリアガスが水素ガスを含有していることを特徴とする請求項3〜5のいずれか一項に記載の製造方法。The manufacturing method according to any one of claims 3 to 5, wherein the carrier gas at the time of semiconductor growth contains hydrogen gas. 減少後の窒素源の流量が全ガス体積中の0.001〜10%であることを特徴とする請求項3〜6のいずれか一項に記載の製造方法。The production method according to any one of claims 3 to 6, wherein the flow rate of the nitrogen source after the reduction is 0.001 to 10% of the total gas volume. 基板上にIII族窒化物半導体からなるn型層、発光層およびp型層を有し、n型層およびp型層に負極および正極がそれぞれ設けられたIII族窒化物半導体発光素子において、p型層が請求項1または2に記載のIII族窒化物p型半導体であることを特徴とするIII族窒化物半導体発光素子。In a group III nitride semiconductor light-emitting device having an n-type layer, a light-emitting layer, and a p-type layer made of a group III nitride semiconductor on a substrate, and a negative electrode and a positive electrode provided on the n-type layer and the p-type layer, respectively, p A group III nitride semiconductor p-type semiconductor according to claim 1 or 2, wherein the group layer is a group III nitride p-type semiconductor. 正極がPd、Pt、Rh、Os、IrおよびRuから選ばれた白金族金属を正極材料として使用していることを特徴とする請求項8に記載の発光素子。The light emitting device according to claim 8, wherein the positive electrode uses a platinum group metal selected from Pd, Pt, Rh, Os, Ir and Ru as the positive electrode material. 発光素子がフリップチップ型であることを特徴とする請求項8または9に記載の発光素子。The light emitting device according to claim 8 or 9, wherein the light emitting device is of a flip chip type. 発光素子がフェイスアップ型であることを特徴とする請求項8または9に記載の発光素子。The light emitting device according to claim 8 or 9, wherein the light emitting device is a face-up type.
JP2005137274A 2004-05-12 2005-05-10 Group III nitride p-type semiconductor and method of manufacturing the same Active JP4297884B2 (en)

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JP4906341B2 (en) * 2005-12-26 2012-03-28 昭和電工株式会社 Group III nitride p-type semiconductor manufacturing method
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JP2007220745A (en) * 2006-02-14 2007-08-30 Showa Denko Kk Manufacturing method of p-type group iii nitride semiconductor

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