JP2005354045A5 - - Google Patents

Description

The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a light emitting device having a low driving voltage and a sufficiently high reverse voltage in a high yield. method for manufacturing a nitride p-type semiconductor and its is intended to provide.

(1) A group III nitride p-type semiconductor containing hydrogen atoms in an amount greater than 1/5 of the concentration of the p-type dopant and less than the concentration of the p-type dopant.

(2) The group III nitride p-type semiconductor according to the above item 1, wherein the electrical resistivity is 20 Ωcm to 10000 Ωcm.

(3) When the temperature is lowered after growing a group III nitride semiconductor containing a p-type dopant, an inert gas is used as a carrier gas immediately after the growth at the same temperature as the temperature at the end of the growth, and a nitrogen source 3. The method for producing a group III nitride p-type semiconductor according to claim 1 or 2, wherein the supply of the nitrogen source is stopped at a temperature of 700 to 950 ° C. during the subsequent temperature lowering process. .

(4) The manufacturing method as described in the above item (3), wherein the temperature at the end of growth is 900 ° C. or higher.

(5) The production method as described in (3) or (4) above, wherein the nitrogen source is ammonia gas.

(6) The manufacturing method according to any one of (3) to (5) above, wherein the carrier gas at the time of semiconductor growth contains hydrogen gas.

(7) The production method according to any one of (3) to (6) above, wherein the flow rate of the nitrogen source after reduction is 0.001 to 10% in the total gas volume.

(8) A group III nitride semiconductor light emitting device having an n-type layer, a light emitting layer, and a p type layer made of a group III nitride semiconductor on a substrate, and a negative electrode and a positive electrode provided on the n type layer and the p type layer, respectively. A group III nitride semiconductor light-emitting device, wherein the p-type layer is the group III nitride p-type semiconductor described in 1 or 2 above.

(9) The light emitting device as described in (8) above, wherein the positive electrode uses a platinum group metal selected from Pd, Pt, Rh, Os, Ir and Ru as the positive electrode material.

(10) The light emitting device as described in 8 or 9 above, wherein the light emitting device is a flip chip type.

(11) The light emitting device as described in 8 or 9 above, wherein the light emitting device is a face-up type.

The group III nitride semiconductor in the group III nitride p-type semiconductor of the present invention includes GaN, binary mixed crystals such as InN and AlN, ternary mixed crystals such as InGaN and AlGaN, and quaternary such as InAlGaN. All mixed crystals are included. Further, in the present invention, a ternary mixed crystal such as GaPN or GaNAs containing a group V element other than nitrogen, a quaternary mixed crystal such as InGaPN, InGaAsN, AlGaPN, or AlGaAsN containing In or Al, further In, A ternary mixed crystal such as AlInGaPN, AlInGaAsN containing both Al, AlGaPAsN containing both P and As, and InGaPAsN, and a ternary mixed crystal of AlInGaPAsN containing all elements are also included in the group III nitride semiconductor.

Claims (11)

A group III nitride p-type semiconductor comprising hydrogen atoms in an amount greater than 1/5 of the concentration of the p-type dopant and less than the concentration of the p-type dopant. The group III nitride p-type semiconductor according to claim 1, wherein the electrical resistivity is 20 Ωcm to 10000 Ωcm. When the temperature is lowered after the growth of the group III nitride semiconductor containing the p-type dopant, an inert gas is used as the carrier gas immediately after the growth at the same temperature as the temperature at the end of the growth, and the flow rate of the nitrogen source is changed. 3. The method for producing a group III nitride p-type semiconductor according to claim 1, wherein the supply of the nitrogen source is stopped at a temperature of 700 to 950 ° C. during the subsequent temperature lowering process. The manufacturing method according to claim 3, wherein the temperature at the end of growth is 900 ° C. or more. The production method according to claim 3 or 4, wherein the nitrogen source is ammonia gas. The manufacturing method according to any one of claims 3 to 5, wherein the carrier gas at the time of semiconductor growth contains hydrogen gas. The production method according to any one of claims 3 to 6, wherein the flow rate of the nitrogen source after the reduction is 0.001 to 10% of the total gas volume. In a group III nitride semiconductor light-emitting device having an n-type layer, a light-emitting layer, and a p-type layer made of a group III nitride semiconductor on a substrate, and a negative electrode and a positive electrode provided on the n-type layer and the p-type layer, respectively, p A group III nitride semiconductor p-type semiconductor according to claim 1 or 2, wherein the group layer is a group III nitride p-type semiconductor. The light emitting device according to claim 8, wherein the positive electrode uses a platinum group metal selected from Pd, Pt, Rh, Os, Ir and Ru as the positive electrode material. The light emitting device according to claim 8 or 9, wherein the light emitting device is of a flip chip type. The light emitting device according to claim 8 or 9, wherein the light emitting device is a face-up type.