JP2005322881A5 - - Google Patents

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Publication number
JP2005322881A5
JP2005322881A5 JP2004372897A JP2004372897A JP2005322881A5 JP 2005322881 A5 JP2005322881 A5 JP 2005322881A5 JP 2004372897 A JP2004372897 A JP 2004372897A JP 2004372897 A JP2004372897 A JP 2004372897A JP 2005322881 A5 JP2005322881 A5 JP 2005322881A5
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JP
Japan
Prior art keywords
laser
semiconductor
adhesion preventing
preventing film
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004372897A
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English (en)
Japanese (ja)
Other versions
JP4594070B2 (ja
JP2005322881A (ja
Filing date
Publication date
Priority claimed from JP2004372897A external-priority patent/JP4594070B2/ja
Priority to JP2004372897A priority Critical patent/JP4594070B2/ja
Application filed filed Critical
Priority to TW094107484A priority patent/TWI268032B/zh
Priority to US11/086,440 priority patent/US7420998B2/en
Priority to CN200510062896A priority patent/CN100592587C/zh
Publication of JP2005322881A publication Critical patent/JP2005322881A/ja
Publication of JP2005322881A5 publication Critical patent/JP2005322881A5/ja
Priority to US11/763,640 priority patent/US7664152B2/en
Publication of JP4594070B2 publication Critical patent/JP4594070B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004372897A 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法 Expired - Lifetime JP4594070B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004372897A JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法
TW094107484A TWI268032B (en) 2004-04-06 2005-03-11 Semiconductor laser device
US11/086,440 US7420998B2 (en) 2004-04-06 2005-03-23 Semiconductor laser device
CN200510062896A CN100592587C (zh) 2004-04-06 2005-04-05 半导体激光元件
US11/763,640 US7664152B2 (en) 2004-04-06 2007-06-15 Semiconductor laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004112254 2004-04-06
JP2004372897A JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005322881A JP2005322881A (ja) 2005-11-17
JP2005322881A5 true JP2005322881A5 (https=) 2007-02-08
JP4594070B2 JP4594070B2 (ja) 2010-12-08

Family

ID=35054913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004372897A Expired - Lifetime JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法

Country Status (4)

Country Link
US (2) US7420998B2 (https=)
JP (1) JP4594070B2 (https=)
CN (1) CN100592587C (https=)
TW (1) TWI268032B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4930322B2 (ja) 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
DE102007011564B4 (de) * 2007-03-07 2019-08-22 Jenoptik Optical Systems Gmbh Verfahren zur verbesserten Herstellung von Diodenlaserbarren
JP2009238820A (ja) * 2008-03-26 2009-10-15 Sony Corp 半導体レーザ装置およびその製造方法
US9952388B2 (en) * 2012-09-16 2018-04-24 Shalom Wertsberger Nano-scale continuous resonance trap refractor based splitter, combiner, and reflector
JP6089902B2 (ja) * 2013-04-11 2017-03-08 三菱電機株式会社 半導体装置の製造方法
WO2021059485A1 (ja) 2019-09-27 2021-04-01 三菱電機株式会社 光半導体装置およびその製造方法
WO2022054281A1 (ja) * 2020-09-14 2022-03-17 三菱電機株式会社 ダミーバー、および、レーザーダイオードバーの端面成膜方法
WO2022102052A1 (ja) * 2020-11-12 2022-05-19 三菱電機株式会社 レーザダイオードバーの端面成膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929486A (ja) * 1982-08-11 1984-02-16 Fujitsu Ltd 半導体レ−ザ素子の製造方法
JPH0613813B2 (ja) * 1986-07-22 1994-02-23 吉田工業株式会社 雨戸の収納・引出し装置
JPH0730095A (ja) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JPH09167873A (ja) * 1995-12-15 1997-06-24 Mitsubishi Electric Corp 半導体レーザ装置
KR19980069992A (ko) * 1997-01-20 1998-10-26 사와무라시코우 광 반도체 장치와 지지기판의 복합 유니트 및 광 반도체 장치를지지기판 상에 실장하기 위한 방법
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3661919B2 (ja) 1998-10-27 2005-06-22 シャープ株式会社 半導体レーザ素子の製造方法
JP2001068782A (ja) 1999-08-31 2001-03-16 Matsushita Electronics Industry Corp 半導体発光装置およびその製造方法
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
JP3505478B2 (ja) * 2000-06-28 2004-03-08 三洋電機株式会社 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
JP2003209318A (ja) * 2001-11-12 2003-07-25 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子

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