JP2005322633A5 - - Google Patents
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- JP2005322633A5 JP2005322633A5 JP2005111288A JP2005111288A JP2005322633A5 JP 2005322633 A5 JP2005322633 A5 JP 2005322633A5 JP 2005111288 A JP2005111288 A JP 2005111288A JP 2005111288 A JP2005111288 A JP 2005111288A JP 2005322633 A5 JP2005322633 A5 JP 2005322633A5
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Claims (11)
前記第1の電極上に設けられた有機化合物層と、An organic compound layer provided on the first electrode;
前記有機化合物層上に設けられた第2の電極と、A second electrode provided on the organic compound layer;
前記第2の電極上に設けられた絶縁膜と、を有し、An insulating film provided on the second electrode,
前記第2の電極は透光性を有し、前記絶縁膜上には光触媒機能を有する物質を含む層が設けられていることを特徴とする発光装置。The light-emitting device is characterized in that the second electrode has a light-transmitting property and a layer containing a substance having a photocatalytic function is provided over the insulating film.
前記絶縁膜に対向して設けられた基板を有し、A substrate provided opposite to the insulating film;
前記基板と前記光触媒機能を有する物質を含む層との間には、前記光触媒機能を有する物質を含む層に接する充填材料が設けられていることを特徴とする発光装置。A light-emitting device, wherein a filling material in contact with the layer containing the substance having a photocatalytic function is provided between the substrate and the layer containing the substance having a photocatalytic function.
前記第1の電極上に設けられ、前記第1の電極に達する開口部を有する隔壁と、A partition wall provided on the first electrode and having an opening reaching the first electrode;
前記第1の電極上及び前記隔壁上に設けられた有機化合物層と、An organic compound layer provided on the first electrode and the partition;
前記有機化合物層上に設けられた第2の電極と、A second electrode provided on the organic compound layer;
前記第2の電極上に設けられた絶縁膜と、An insulating film provided on the second electrode;
前記絶縁膜に対向して設けられた基板と、A substrate provided opposite to the insulating film;
前記基板に設けられた着色層と、を有し、A colored layer provided on the substrate,
前記第2の電極は透光性を有し、前記絶縁膜上には光触媒機能を有する物質を含む層が設けられており、The second electrode has a light-transmitting property, and a layer containing a substance having a photocatalytic function is provided on the insulating film,
前記隔壁は遮光性を有し、The partition has a light shielding property,
前記着色層は前記開口部と重なる位置に設けられ、且つ前記着色層の面積は前記開口部の面積よりも大きいことを特徴とする発光装置。The light emitting device, wherein the colored layer is provided at a position overlapping the opening, and an area of the colored layer is larger than an area of the opening.
前記第1の電極の下には、層間絶縁膜が設けられており、An interlayer insulating film is provided under the first electrode,
前記層間絶縁膜の下には、スイッチング素子が設けられていることを特徴とする発光装置。A switching device is provided under the interlayer insulating film.
前記第1の電極の下には、遮光性を有する層間絶縁膜が設けられており、An interlayer insulating film having a light shielding property is provided under the first electrode,
前記遮光性を有する層間絶縁膜の下には、スイッチング素子が設けられていることを特徴とする発光装置。A light-emitting device, wherein a switching element is provided under the light-shielding interlayer insulating film.
前記基板と前記光触媒機能を有する物質を含む層との間には、前記光触媒機能を有する物質を含む層に接する充填材料が設けられていることを特徴とする発光装置。A light-emitting device, wherein a filling material in contact with the layer containing the substance having a photocatalytic function is provided between the substrate and the layer containing the substance having a photocatalytic function.
前記光触媒機能を有する物質を含む層には、酸化チタン(TiOThe layer containing the substance having a photocatalytic function includes titanium oxide (TiO 2). XX )、チタン酸ストロンチウム(SrTiO), Strontium titanate (SrTiO) 33 )、セレン化カドミウム(CdSe)、タンタル酸カリウム(KTaO), Cadmium selenide (CdSe), potassium tantalate (KTaO) 33 )、硫化カドミウム(CdS)、酸化ジルコニウム(ZrO), Cadmium sulfide (CdS), zirconium oxide (ZrO) 22 )、酸化ニオブ(Nb), Niobium oxide (Nb) 22 OO 55 )、酸化亜鉛(ZnO)、酸化鉄(Fe), Zinc oxide (ZnO), iron oxide (Fe 22 OO 33 )、酸化タングステン(WO), Tungsten oxide (WO 33 )から選ばれた1種または複数種が含まれることを特徴とする発光装置。1) or a plurality of types selected from the above.
前記第2の電極上に絶縁膜を形成し、Forming an insulating film on the second electrode;
前記絶縁膜上に光触媒機能を有する物質を含む層を形成し、Forming a layer containing a substance having a photocatalytic function on the insulating film;
前記光触媒機能を有する物質を含む層に光を照射することによって、前記光触媒機能を有する物質を含む層に光触媒活性を生じさせた後、前記光触媒機能を有する物質を含む層上に接して充填材料を設けることを特徴とする発光装置の作製方法。The layer containing the substance having the photocatalytic function is irradiated with light to cause photocatalytic activity in the layer containing the substance having the photocatalytic function, and then contacted on the layer containing the substance having the photocatalytic function. A method for manufacturing a light-emitting device.
前記層間絶縁膜上に第1の電極を形成し、Forming a first electrode on the interlayer insulating film;
前記第1の電極上に有機化合物層を形成し、Forming an organic compound layer on the first electrode;
前記有機化合物層上に透光性を有する第2の電極を形成し、Forming a second electrode having translucency on the organic compound layer;
前記第2の電極上に絶縁膜を形成し、Forming an insulating film on the second electrode;
前記絶縁膜上に光触媒機能を有する物質を含む層を形成し、Forming a layer containing a substance having a photocatalytic function on the insulating film;
前記光触媒機能を有する物質を含む層に光を照射することによって、前記光触媒機能を有する物質を含む層に光触媒活性を生じさせた後、前記光触媒機能を有する物質を含む層上に接して充填材料を設けることを特徴とする発光装置の作製方法。The layer containing the substance having the photocatalytic function is irradiated with light to cause photocatalytic activity in the layer containing the substance having the photocatalytic function, and then contacted on the layer containing the substance having the photocatalytic function. A method for manufacturing a light-emitting device.
前記光触媒機能を有する物質を含む層には、酸化チタン(TiOThe layer containing the substance having a photocatalytic function includes titanium oxide (TiO 2). XX )、チタン酸ストロンチウム(SrTiO), Strontium titanate (SrTiO) 33 )、セレン化カドミウム(CdSe)、タンタル酸カリウム(KTaO), Cadmium selenide (CdSe), potassium tantalate (KTaO) 33 )、硫化カドミウム(CdS)、酸化ジルコニウム(ZrO), Cadmium sulfide (CdS), zirconium oxide (ZrO) 22 )、酸化ニオブ(Nb), Niobium oxide (Nb) 22 OO 55 )、酸化亜鉛(ZnO)、酸化鉄(Fe), Zinc oxide (ZnO), iron oxide (Fe 22 OO 33 )、酸化タングステン(WO), Tungsten oxide (WO 33 )から選ばれた1種または複数種が含まれることを特徴とする発光装置の作製方法。1) or a plurality of types selected from the group consisting of a light-emitting device.
前記光は、紫外光であることを特徴とする発光装置の作製方法。The method for manufacturing a light-emitting device, wherein the light is ultraviolet light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005111288A JP4731970B2 (en) | 2004-04-07 | 2005-04-07 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004112801 | 2004-04-07 | ||
JP2004112801 | 2004-04-07 | ||
JP2005111288A JP4731970B2 (en) | 2004-04-07 | 2005-04-07 | Light emitting device and manufacturing method thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005322633A JP2005322633A (en) | 2005-11-17 |
JP2005322633A5 true JP2005322633A5 (en) | 2008-04-10 |
JP4731970B2 JP4731970B2 (en) | 2011-07-27 |
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ID=35469721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005111288A Expired - Fee Related JP4731970B2 (en) | 2004-04-07 | 2005-04-07 | Light emitting device and manufacturing method thereof |
Country Status (1)
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JP (1) | JP4731970B2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006236839A (en) * | 2005-02-25 | 2006-09-07 | Mitsubishi Electric Corp | Organic electroluminescent display device |
CN101322439B (en) * | 2005-11-30 | 2011-09-21 | 住友化学株式会社 | White organic electroluminescent device |
JP2007180020A (en) * | 2005-11-30 | 2007-07-12 | Sumitomo Chemical Co Ltd | White organic electroluminescence element |
JP2007188653A (en) | 2006-01-11 | 2007-07-26 | Seiko Epson Corp | Light emitting unit and electronic apparatus |
JP2008218206A (en) * | 2007-03-05 | 2008-09-18 | Seiko Epson Corp | Electro-optical device and its manufacturing method, and electronic equipment |
JP4582102B2 (en) * | 2007-03-08 | 2010-11-17 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
JP2009020493A (en) * | 2007-06-13 | 2009-01-29 | Canon Inc | Organic el panel |
JP5541849B2 (en) * | 2008-06-23 | 2014-07-09 | エルジー ディスプレイ カンパニー リミテッド | Organic EL display and manufacturing method thereof |
KR101023133B1 (en) | 2009-03-19 | 2011-03-18 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
WO2012023177A1 (en) * | 2010-08-17 | 2012-02-23 | パイオニア株式会社 | Organic light emitting element |
JP6061581B2 (en) | 2012-09-19 | 2017-01-18 | ソニーセミコンダクタソリューションズ株式会社 | Display device |
JP6079118B2 (en) * | 2012-10-10 | 2017-02-15 | コニカミノルタ株式会社 | Light-emitting layer forming ink composition, method for producing light-emitting element, and electroluminescence device |
JP6191287B2 (en) * | 2013-07-05 | 2017-09-06 | ソニー株式会社 | Display device |
JP6235657B2 (en) * | 2016-07-08 | 2017-11-22 | ソニーセミコンダクタソリューションズ株式会社 | Display device |
JP2023035934A (en) * | 2021-09-01 | 2023-03-13 | 凸版印刷株式会社 | Optical device and manufacturing method of the same |
WO2024100801A1 (en) * | 2022-11-09 | 2024-05-16 | シャープディスプレイテクノロジー株式会社 | Display device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07201466A (en) * | 1993-12-29 | 1995-08-04 | Fuji Electric Co Ltd | Multicolor thin film electroluminescence element |
JPH10168397A (en) * | 1996-12-06 | 1998-06-23 | Toshiba Corp | Bonded of resin member and resin member |
JP2000173778A (en) * | 1998-12-01 | 2000-06-23 | Tdk Corp | Organic el display device |
JP2000171629A (en) * | 1998-12-09 | 2000-06-23 | Canon Inc | Color filter and its manufacture, liquid crystal device |
US6552488B1 (en) * | 1999-08-24 | 2003-04-22 | Agilent Technologies, Inc. | Organic electroluminescent device |
JP2002083689A (en) * | 2000-06-29 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | Luminescence device |
JP2002231445A (en) * | 2001-01-31 | 2002-08-16 | Dainippon Printing Co Ltd | El element and method of manufacture |
JP4262902B2 (en) * | 2001-03-30 | 2009-05-13 | 三洋電機株式会社 | Electroluminescence display device |
JP2003332070A (en) * | 2002-05-16 | 2003-11-21 | Seiko Epson Corp | Electro-optical device, its manufacturing method, and electronic apparatus |
JP4142908B2 (en) * | 2002-07-05 | 2008-09-03 | 日本パーカライジング株式会社 | Roughening method of resin surface |
JP3726789B2 (en) * | 2002-08-23 | 2005-12-14 | 富士電機ホールディングス株式会社 | Organic EL display |
-
2005
- 2005-04-07 JP JP2005111288A patent/JP4731970B2/en not_active Expired - Fee Related
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