JP2005320634A5 - - Google Patents
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- Publication number
- JP2005320634A5 JP2005320634A5 JP2005208413A JP2005208413A JP2005320634A5 JP 2005320634 A5 JP2005320634 A5 JP 2005320634A5 JP 2005208413 A JP2005208413 A JP 2005208413A JP 2005208413 A JP2005208413 A JP 2005208413A JP 2005320634 A5 JP2005320634 A5 JP 2005320634A5
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- substrate
- film
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 description 167
- 239000002184 metal Substances 0.000 description 163
- 239000007789 gas Substances 0.000 description 152
- 239000010408 film Substances 0.000 description 121
- 239000000460 chlorine Substances 0.000 description 99
- 210000002381 Plasma Anatomy 0.000 description 94
- 239000000758 substrate Substances 0.000 description 82
- 239000002131 composite material Substances 0.000 description 79
- 238000004519 manufacturing process Methods 0.000 description 44
- 239000010949 copper Substances 0.000 description 42
- 238000005755 formation reaction Methods 0.000 description 39
- 229910052736 halogen Inorganic materials 0.000 description 34
- 150000002367 halogens Chemical class 0.000 description 34
- 239000010409 thin film Substances 0.000 description 32
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 31
- 229910052802 copper Inorganic materials 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 24
- 239000002994 raw material Substances 0.000 description 20
- 230000005284 excitation Effects 0.000 description 18
- 229910052738 indium Inorganic materials 0.000 description 17
- 150000004820 halides Chemical class 0.000 description 16
- 102000014961 Protein Precursors Human genes 0.000 description 15
- 108010078762 Protein Precursors Proteins 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- OXBLHERUFWYNTN-UHFFFAOYSA-M Copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 229910052755 nonmetal Inorganic materials 0.000 description 10
- 229910052801 chlorine Inorganic materials 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- 238000010494 dissociation reaction Methods 0.000 description 9
- 230000005593 dissociations Effects 0.000 description 9
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 8
- 239000011669 selenium Substances 0.000 description 8
- -1 CuInSe 2 Chemical class 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N Hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- 230000001737 promoting Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000003247 decreasing Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000002441 reversible Effects 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005208413A JP4117308B2 (ja) | 2002-03-08 | 2005-07-19 | 金属膜作製方法及び金属膜作製装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063063 | 2002-03-08 | ||
| JP2005208413A JP4117308B2 (ja) | 2002-03-08 | 2005-07-19 | 金属膜作製方法及び金属膜作製装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002229413A Division JP3716235B2 (ja) | 2002-03-08 | 2002-08-07 | 金属膜作製方法及び金属膜作製装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005320634A JP2005320634A (ja) | 2005-11-17 |
| JP2005320634A5 true JP2005320634A5 (de) | 2008-03-21 |
| JP4117308B2 JP4117308B2 (ja) | 2008-07-16 |
Family
ID=35468098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005208413A Expired - Fee Related JP4117308B2 (ja) | 2002-03-08 | 2005-07-19 | 金属膜作製方法及び金属膜作製装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4117308B2 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009102056A1 (ja) * | 2008-02-15 | 2009-08-20 | Canon Anelva Corporation | 金属埋め込み方法及び凹部に金属を堆積させるための装置 |
-
2005
- 2005-07-19 JP JP2005208413A patent/JP4117308B2/ja not_active Expired - Fee Related
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