JP2005311346A5 - - Google Patents

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Publication number
JP2005311346A5
JP2005311346A5 JP2005087187A JP2005087187A JP2005311346A5 JP 2005311346 A5 JP2005311346 A5 JP 2005311346A5 JP 2005087187 A JP2005087187 A JP 2005087187A JP 2005087187 A JP2005087187 A JP 2005087187A JP 2005311346 A5 JP2005311346 A5 JP 2005311346A5
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JP
Japan
Prior art keywords
slit
laser
energy density
semiconductor film
convex
Prior art date
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JP2005087187A
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English (en)
Japanese (ja)
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JP2005311346A (ja
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Priority to JP2005087187A priority Critical patent/JP2005311346A/ja
Priority claimed from JP2005087187A external-priority patent/JP2005311346A/ja
Publication of JP2005311346A publication Critical patent/JP2005311346A/ja
Publication of JP2005311346A5 publication Critical patent/JP2005311346A5/ja
Withdrawn legal-status Critical Current

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JP2005087187A 2004-03-26 2005-03-24 レーザアニール方法及び装置 Withdrawn JP2005311346A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005087187A JP2005311346A (ja) 2004-03-26 2005-03-24 レーザアニール方法及び装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004092933 2004-03-26
JP2005087187A JP2005311346A (ja) 2004-03-26 2005-03-24 レーザアニール方法及び装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011265400A Division JP5745714B2 (ja) 2004-03-26 2011-12-05 レーザアニール方法

Publications (2)

Publication Number Publication Date
JP2005311346A JP2005311346A (ja) 2005-11-04
JP2005311346A5 true JP2005311346A5 (https=) 2008-03-21

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ID=35439693

Family Applications (1)

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JP2005087187A Withdrawn JP2005311346A (ja) 2004-03-26 2005-03-24 レーザアニール方法及び装置

Country Status (1)

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JP (1) JP2005311346A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100541722C (zh) 2004-03-26 2009-09-16 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
JP7820804B2 (ja) * 2022-03-09 2026-02-26 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232317A (ja) * 1988-07-21 1990-02-02 Kanagawa Pref Gov エキシマレーザビーム用光学系
JPH09129573A (ja) * 1995-07-25 1997-05-16 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
JP3871993B2 (ja) * 2001-10-25 2007-01-24 株式会社半導体エネルギー研究所 レーザ照射装置
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

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