JP2005311346A - レーザアニール方法及び装置 - Google Patents

レーザアニール方法及び装置 Download PDF

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Publication number
JP2005311346A
JP2005311346A JP2005087187A JP2005087187A JP2005311346A JP 2005311346 A JP2005311346 A JP 2005311346A JP 2005087187 A JP2005087187 A JP 2005087187A JP 2005087187 A JP2005087187 A JP 2005087187A JP 2005311346 A JP2005311346 A JP 2005311346A
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Japan
Prior art keywords
laser
slit
spherical lens
convex spherical
linear
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JP2005087187A
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Japanese (ja)
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JP2005311346A5 (https=
Inventor
Koichiro Tanaka
幸一郎 田中
Yoshiaki Yamamoto
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005087187A priority Critical patent/JP2005311346A/ja
Publication of JP2005311346A publication Critical patent/JP2005311346A/ja
Publication of JP2005311346A5 publication Critical patent/JP2005311346A5/ja
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JP2005087187A 2004-03-26 2005-03-24 レーザアニール方法及び装置 Withdrawn JP2005311346A (ja)

Priority Applications (1)

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JP2005087187A JP2005311346A (ja) 2004-03-26 2005-03-24 レーザアニール方法及び装置

Applications Claiming Priority (2)

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JP2004092933 2004-03-26
JP2005087187A JP2005311346A (ja) 2004-03-26 2005-03-24 レーザアニール方法及び装置

Related Child Applications (1)

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JP2011265400A Division JP5745714B2 (ja) 2004-03-26 2011-12-05 レーザアニール方法

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JP2005311346A true JP2005311346A (ja) 2005-11-04
JP2005311346A5 JP2005311346A5 (https=) 2008-03-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
WO2023171170A1 (ja) * 2022-03-09 2023-09-14 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232317A (ja) * 1988-07-21 1990-02-02 Kanagawa Pref Gov エキシマレーザビーム用光学系
JPH09129573A (ja) * 1995-07-25 1997-05-16 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
JP2000091264A (ja) * 1998-07-13 2000-03-31 Semiconductor Energy Lab Co Ltd レ―ザ―照射装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2003197916A (ja) * 2001-12-21 2003-07-11 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2003203876A (ja) * 2001-10-25 2003-07-18 Semiconductor Energy Lab Co Ltd レーザ照射装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232317A (ja) * 1988-07-21 1990-02-02 Kanagawa Pref Gov エキシマレーザビーム用光学系
JPH09129573A (ja) * 1995-07-25 1997-05-16 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
JP2000091264A (ja) * 1998-07-13 2000-03-31 Semiconductor Energy Lab Co Ltd レ―ザ―照射装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2003203876A (ja) * 2001-10-25 2003-07-18 Semiconductor Energy Lab Co Ltd レーザ照射装置
JP2003197916A (ja) * 2001-12-21 2003-07-11 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
WO2023171170A1 (ja) * 2022-03-09 2023-09-14 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法
JP2023131583A (ja) * 2022-03-09 2023-09-22 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法
JP7820804B2 (ja) 2022-03-09 2026-02-26 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

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