JP2005311253A - 配線基板 - Google Patents
配線基板 Download PDFInfo
- Publication number
- JP2005311253A JP2005311253A JP2004129884A JP2004129884A JP2005311253A JP 2005311253 A JP2005311253 A JP 2005311253A JP 2004129884 A JP2004129884 A JP 2004129884A JP 2004129884 A JP2004129884 A JP 2004129884A JP 2005311253 A JP2005311253 A JP 2005311253A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- dummy
- connection pads
- insulating base
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 117
- 239000000919 ceramic Substances 0.000 claims abstract description 28
- 238000010030 laminating Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 27
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 description 12
- 238000010304 firing Methods 0.000 description 9
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000002241 glass-ceramic Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】 複数のセラミック層1aが積層されて成る四角形状の絶縁基体1と、絶縁基体1の内部に形成された配線導体3と、絶縁基体1の一方主面の中央部に縦横に配列形成され、配線導体3と貫通導体4を介して電気的に接続された複数の接続パッド2と、複数の接続パッド2全体の周囲に隣接して形成された、配線導体3と電気的に接続されていない複数のダミー貫通導体6とを具備している。
【選択図】 図1
Description
1a・・・セラミック層
2・・・接続パッド
3・・・配線導体
4・・・貫通導体
5・・・ダミー接続パッド
6・・・ダミー貫通導体
9・・・配線基板
Claims (3)
- 複数のセラミック層が積層されて成る四角形状の絶縁基体と、該絶縁基体の内部に形成された配線導体と、前記絶縁基体の一方主面の中央部に縦横に配列形成され、前記配線導体と貫通導体を介して電気的に接続された複数の接続パッドと、該複数の接続パッド全体の周囲に隣接して形成された、前記配線導体と電気的に接続されていない複数のダミー貫通導体とを具備していることを特徴とする配線基板。
- 前記複数の接続パッドは、縦方向での隣接間隔および横方向での隣接間隔がそれぞれ同じであるとともに全体として四角形状の配列になるようにして形成されており、前記複数のダミー貫通導体は、前記複数の接続パッドの並びの延長線上に、前記ダミー貫通導体と隣接する前記接続パッドとの間の隣接間隔が前記接続パッド同士の隣接間隔と同じになるようにして形成されていることを特徴とする請求項1記載の配線基板。
- 前記ダミー貫通導体は、前記複数のセラミック層のうち前記一方主面を有する最外層の前記セラミック層に形成されていることを特徴とする請求項1または請求項2記載の配線基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004129884A JP4373841B2 (ja) | 2004-04-26 | 2004-04-26 | 配線基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004129884A JP4373841B2 (ja) | 2004-04-26 | 2004-04-26 | 配線基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005311253A true JP2005311253A (ja) | 2005-11-04 |
JP4373841B2 JP4373841B2 (ja) | 2009-11-25 |
Family
ID=35439628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004129884A Expired - Fee Related JP4373841B2 (ja) | 2004-04-26 | 2004-04-26 | 配線基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4373841B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010007878A1 (ja) * | 2008-07-14 | 2010-01-21 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JP2013251437A (ja) * | 2012-06-01 | 2013-12-12 | Fujitsu Semiconductor Ltd | 半導体装置 |
JP2014192432A (ja) * | 2013-03-28 | 2014-10-06 | Kyocer Slc Technologies Corp | 配線基板 |
JP2016012658A (ja) * | 2014-06-30 | 2016-01-21 | 京セラサーキットソリューションズ株式会社 | 配線基板 |
-
2004
- 2004-04-26 JP JP2004129884A patent/JP4373841B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010007878A1 (ja) * | 2008-07-14 | 2010-01-21 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JP2013251437A (ja) * | 2012-06-01 | 2013-12-12 | Fujitsu Semiconductor Ltd | 半導体装置 |
JP2014192432A (ja) * | 2013-03-28 | 2014-10-06 | Kyocer Slc Technologies Corp | 配線基板 |
JP2016012658A (ja) * | 2014-06-30 | 2016-01-21 | 京セラサーキットソリューションズ株式会社 | 配線基板 |
Also Published As
Publication number | Publication date |
---|---|
JP4373841B2 (ja) | 2009-11-25 |
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