JP2005289744A - Method for manufacturing reaction sintered silicon carbide structure - Google Patents

Method for manufacturing reaction sintered silicon carbide structure Download PDF

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JP2005289744A
JP2005289744A JP2004108320A JP2004108320A JP2005289744A JP 2005289744 A JP2005289744 A JP 2005289744A JP 2004108320 A JP2004108320 A JP 2004108320A JP 2004108320 A JP2004108320 A JP 2004108320A JP 2005289744 A JP2005289744 A JP 2005289744A
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silicon carbide
reaction
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molded body
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JP4381207B2 (en
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Tsuneji Kameda
常治 亀田
Akiko Suyama
章子 須山
Yoshiyasu Ito
義康 伊藤
Shigeki Maruyama
茂樹 丸山
Norihiko Iida
式彦 飯田
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Toshiba Corp
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F7/00Elements not covered by group F28F1/00, F28F3/00 or F28F5/00
    • F28F7/02Blocks traversed by passages for heat-exchange media
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/04Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reaction sintered silicon carbide structure which has excellent structural strength, corrosion resistance, durability, etc., in a wide service temperature range from room temperature up to a high temperature and can easily and efficiently manufacture even the small-sized structure having intricate shapes with high dimensional accuracy. <P>SOLUTION: A raw material mixture prepared by mixing silicon carbide powder, carbon powder and a binder is molded and a plurality of sheet-like moldings 2 with grooves are manufactured and a plurality of the sheet-like moldings 2 are temporarily joined by adhesives, and thereby a laminate internally provided with the grooves 1 in the form of pores 5 is formed. The obtained laminate is subjected to a binder removing treatment to form a degreased body and thereafter the degreased body is heated to impregnate the same with molten silicon and to give rise to reaction sintering, whereby the integral sintered compact is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は反応焼結炭化ケイ素構造体の製造方法に係り、特に室温から高温度までの広い使用温度範囲において優れた構造強度,耐食性,耐久性等を有し、小型で複雑形状を有する構造体であっても容易かつ効率的に製造することが可能な反応焼結炭化ケイ素構造体の製造方法に関する。   The present invention relates to a method for producing a reaction sintered silicon carbide structure, and in particular, a structure having excellent structural strength, corrosion resistance, durability, etc. in a wide use temperature range from room temperature to high temperature, and having a small and complicated shape. However, the present invention relates to a method for producing a reaction sintered silicon carbide structure that can be produced easily and efficiently.

従来の金属製部品と比較して耐熱性、耐摩耗性、絶縁特性、耐薬品性等に優れた酸化物あるいは非酸化物系セラミックス焼結体から成る構造部品が、工具部品、耐食性部品、自動車、航空機、船舶などのエンジン部品、ガスタービン部品、化学プラント構成部品として各種産業分野において広範囲に使用されている。   Structural parts made of sintered oxide or non-oxide ceramics that are superior in heat resistance, wear resistance, insulation characteristics, chemical resistance, etc. compared to conventional metal parts are tool parts, corrosion resistant parts, automobiles It is widely used in various industrial fields as engine parts for aircraft, ships, etc., gas turbine parts, and chemical plant components.

例えば、従来から硫酸、硝酸などを製造する化学品生成プラント、および同種の化学物質を用いる各種化学プラント、エネルギープラント、環境有害物質の処理装置やごみ処理用ガス化溶解炉等のように高温度条件下で運転されるプラントにおいて使用される構造部品材料としては、従来の金属材料では高温度における耐食性が不充分であり、より熱的に、かつ化学的な安定性に優れたセラミックス材料の適用が図られている。   For example, chemical production plants that conventionally produce sulfuric acid, nitric acid, etc., various chemical plants that use the same kind of chemical substances, energy plants, environmental hazardous substances treatment equipment, gasification melting furnaces for waste treatment, etc. As a structural component material used in plants operating under conditions, conventional metal materials are insufficient in corrosion resistance at high temperatures, and more thermally and chemically stable ceramic materials are used. Is planned.

特にセラミックス熱交換器としては、単一の孔(熱放射管)を形成した単純構造を有するチューブ状シングルエンド型熱交換器が工業炉用に実用化されている。例えば、炉温1150℃の連続式焼鈍炉などで、1994年頃から使用されているラジアントチューブ(熱放射管)は、内側からバーナーの燃焼により輻射伝熱を図るものである。また、ラジアントチューブは、燃焼熱を炉内に輻射伝熱するだけではなく、低温度の空気をチューブ内に吹き込んで炉内から発生した熱を回収再生する目的にも使用されている。   In particular, as a ceramic heat exchanger, a tube-shaped single-ended heat exchanger having a simple structure in which a single hole (heat radiation tube) is formed has been put to practical use for an industrial furnace. For example, a radiant tube (thermal radiation tube) that has been used since about 1994 in a continuous annealing furnace having a furnace temperature of 1150 ° C. is intended to conduct radiant heat transfer by burning a burner from the inside. The radiant tube is used not only for radiating heat of combustion into the furnace but also for recovering and regenerating heat generated from the furnace by blowing low-temperature air into the tube.

上述したようなセラミックス熱交換器は、主にセラミックス部材が高硬度で脆く加工時に損傷し易いという製作性の悪さを考慮して大型の構造物とすることが多く、チューブで構成する伝熱面を高密度かつ複雑に集積したコンパクトな熱交換器への適用はほとんど行われていない現状である。   Ceramic heat exchangers as described above often have large structures considering the poor manufacturability of ceramic members, which are mainly hard and brittle and easily damaged during processing. Currently, there is almost no application to compact heat exchangers with high density and complex integration.

また、一体化したセラミックス部材で作製することが困難な構造部品の大型化および複雑形状化を図るためには、従来から複数のセラミックス部材を部品ユニットとして用意し、これら複数の部品ユニットを相互に接合して大型で複雑形状を有する構造部品を作製することが試行されている(例えば、特許文献1参照。)。   In addition, in order to increase the size and complexity of structural parts that are difficult to manufacture with integrated ceramic members, conventionally, a plurality of ceramic members have been prepared as component units. Attempts have been made to fabricate large and complex structural parts that are joined (see, for example, Patent Document 1).

さらに、従来のセラミックス部材の製造方法として、炭化ケイ素体(炭化ケイ素基焼結体もしくはその前駆体としての成形体や仮焼体)と多孔質炭化ケイ素体(炭化ケイ素の反応焼結工程における成形体、仮焼体、焼結体など)とを、炭化ケイ素微粉末を含有する熱硬化性樹脂からなる接合層を介して重ね合わせ、多孔質炭化ケイ素体の側から溶融シリコンを含浸することによって、炭化ケイ素体と多孔質炭化ケイ素体とを接合する方法も提案されている(例えば、特許文献2参照。)。   Furthermore, as a conventional method for producing a ceramic member, a silicon carbide body (a silicon carbide-based sintered body or a molded body or a calcined body as a precursor thereof) and a porous silicon carbide body (molding in a reactive sintering process of silicon carbide) Body, calcined body, sintered body, etc.) through a bonding layer made of thermosetting resin containing silicon carbide fine powder, and impregnated with molten silicon from the porous silicon carbide body side A method of joining a silicon carbide body and a porous silicon carbide body has also been proposed (see, for example, Patent Document 2).

上記の接合方法では、接合層中に含有される炭素と溶融シリコンとを反応させることにより、接合部に反応焼結炭化ケイ素層を形成し、この反応焼結炭化ケイ素層を介して上記炭化ケイ素体と多孔質炭化ケイ素体とを接合している。また、この接合方法を用いて、例えば、炭化ケイ素体からなる部品ユニット間を、炭化ケイ素粉末を含有した樹脂系接着剤で接着し、脱バインダー処理を実施した後に溶融シリコンを含侵させて複数の部品ユニットを一体に接合する方法も実施されている。
特開2002−11653号公報(第1−2頁、第2図) 特公平5−79630号公報(第1−4頁、第1図)
In the above bonding method, carbon contained in the bonding layer and molten silicon are reacted to form a reaction sintered silicon carbide layer at the bonding portion, and the silicon carbide is formed via the reaction sintered silicon carbide layer. The body and the porous silicon carbide body are joined. In addition, by using this bonding method, for example, a plurality of parts units made of silicon carbide are bonded with a resin-based adhesive containing silicon carbide powder, and after debinding, impregnated with molten silicon. A method of integrally joining the component units is also implemented.
JP 2002-11653 A (page 1-2, FIG. 2) Japanese Examined Patent Publication No. 5-79630 (page 1-4, Fig. 1)

しかしながら、上記従来のセラミックス構造体の製造方法は、やはり大型の構造物を製造するための手法であり、複雑形状を有しコンパクトな熱交換器等に適用するための製造技術は開示されていない。特に、硬度が高く脆性を有するセラミックス焼結体に熱交換用の細孔等を多数形成し複雑な形状を有する構造体を高い寸法精度に仕上げることは極めて困難であるという問題点があった。また、接着剤を使用して複数の部品ユニットを接合しただけでは接合強度が低く、特に高温度使用条件において接合強度および構造体としての強度が低下し易く、耐久性が乏しく信頼性に欠ける問題点もあった。   However, the conventional method for manufacturing a ceramic structure is still a method for manufacturing a large structure, and a manufacturing technique for applying to a compact heat exchanger having a complicated shape is not disclosed. . In particular, there is a problem that it is extremely difficult to finish a structure having a complicated shape by forming a large number of pores for heat exchange in a ceramic sintered body having high hardness and brittleness. Also, simply bonding multiple component units using adhesives will result in low bonding strength, especially in high-temperature operating conditions, the bonding strength and the strength of the structure will tend to decrease, resulting in poor durability and lack of reliability. There was also a point.

本発明は上記従来の問題点を解決するためになされたものであり、室温から高温度までの広い使用温度範囲において優れた構造強度,耐食性,耐久性等を有し、小型で複雑形状を有する構造体であっても高い寸法精度で容易かつ効率的に製造することが可能な反応焼結炭化ケイ素構造体の製造方法を提供することを目的とする。   The present invention has been made to solve the above-described conventional problems, and has excellent structural strength, corrosion resistance, durability, etc. in a wide use temperature range from room temperature to high temperature, and has a small and complicated shape. It is an object of the present invention to provide a method for producing a reaction-sintered silicon carbide structure that can be produced easily and efficiently with high dimensional accuracy even if it is a structure.

上記目的を達成するために、本発明に係る反応焼結炭化ケイ素構造体の製造方法は、炭化ケイ素(SiC)粉末と炭素(C)粉末とバインダーとを混合して成る原料混合体を成形して溝付きの板状成形体を複数個作製し、これらの複数の板状成形体を接着剤で仮接合することにより上記溝を細孔として内部に備えた積層体を形成し、得られた積層体について脱バインダー処理を実施して脱脂体とした後に、この脱脂体を加熱し、溶融シリコンを含浸して反応焼結せしめて一体の焼結体とすることを特徴とする。   In order to achieve the above object, a method for producing a reaction sintered silicon carbide structure according to the present invention comprises forming a raw material mixture formed by mixing silicon carbide (SiC) powder, carbon (C) powder and a binder. A plurality of plate-like molded bodies with grooves were prepared, and a laminate having the above grooves as pores was formed by temporarily joining the plurality of plate-shaped molded bodies with an adhesive, and obtained. The laminated body is subjected to a debinding process to obtain a degreased body, and then the degreased body is heated, impregnated with molten silicon and subjected to reactive sintering to form an integrated sintered body.

すなわち、本発明方法によれば、炭化ケイ素粉末と炭素粉末とバインダーとから成る原料混合体から溝付きの板状成形体を複数個作製し、これらの板状成形体同士を積層するように接着剤で接合し、脱バインダー処理後に、溶融シリコンを含浸して一体化することにより、上記溝形状に対応した細孔が形成された反応焼結炭化ケイ素構造体を容易かつ効率的に製造することができる。   That is, according to the method of the present invention, a plurality of grooved plate-shaped molded bodies are produced from a raw material mixture composed of silicon carbide powder, carbon powder, and a binder, and these plate-shaped molded bodies are bonded together. The reaction-sintered silicon carbide structure in which pores corresponding to the groove shape are formed is easily and efficiently manufactured by bonding with an agent and impregnating with molten silicon after the binder removal treatment. Can do.

炭化ケイ素(SiC)は、他のセラミックス焼結体と比較して高い熱伝導率を有するため、その焼結体は熱交換器や放熱機構などの特に高熱伝導性を必須の要件とする構造体の構成材料として有効である。   Since silicon carbide (SiC) has a higher thermal conductivity than other ceramic sintered bodies, the sintered body is a structure that requires a particularly high thermal conductivity such as a heat exchanger or a heat dissipation mechanism. It is effective as a constituent material.

上記板状成形体に形成した溝は、焼結体内部に形成する細孔となる溝であり、この溝を形成した1枚の成形体に他の板状成形体を重ね合わせて上記細孔が形成される。上記溝は板状成形体の表面に形成されるものであるため、成形体本体の表面側から加工することにより高精細に複雑形状に形成することが可能であり、この溝形状に対応する細孔の形状も高精細に、かつ複雑形状に形成することができる。   The groove formed in the plate-like molded body is a groove to be a pore formed inside the sintered body, and the other pore-shaped molded body is overlapped on one molded body in which the groove is formed. Is formed. Since the groove is formed on the surface of the plate-shaped molded body, it can be formed into a complicated shape with high definition by processing from the surface side of the molded body, and a fine shape corresponding to the groove shape. The shape of the hole can also be formed with high definition and a complicated shape.

上記複数の板状成形体を仮接合する接着剤としては、加熱処理により炭素源が残存する有機系接着剤、樹脂、炭化ケイ素粉末および/または炭素粉末を混合した樹脂系材料等を用いることが好ましい。   As the adhesive for temporarily joining the plurality of plate-shaped molded bodies, an organic adhesive in which a carbon source remains by heat treatment, a resin, a silicon carbide powder and / or a resin-based material mixed with carbon powder, or the like is used. preferable.

脱バインダー処理は、所定の成形体形状を保持するために原料混合体に添加した結合剤(バインダー)を除去して脱脂体とする操作であり、具体的には積層体(成形体)を不活性ガスや窒素ガスの気流中で温度600〜850℃に加熱し1〜3時間保持する操作である。なお、上記脱バインダー処理のための加熱工程と後述する溶融シリコンの含浸工程とは同一加熱プロセスで兼用することも可能である。   The debinding process is an operation of removing a binder (binder) added to the raw material mixture to maintain a predetermined shape of the molded body to obtain a degreased body. Specifically, the laminate (molded body) is not used. This is an operation of heating to a temperature of 600 to 850 ° C. in an air flow of active gas or nitrogen gas and holding for 1 to 3 hours. The heating process for the binder removal treatment and the molten silicon impregnation process described later can be used in the same heating process.

SiCの反応焼結および溶融Siの含浸工程においては、SiC微粉末とC粉末との混合体を成形した後に、温度1450〜1500℃程度の高温度で加熱し、溶融Siを成形体中に浸透させると同時に反応焼結を進行させる。浸透したSiの一部は成形体中のCと反応して二次的にSiCを生成させ、残りは成形体中の空隙部を埋めて緻密な焼結体が形成される。この焼結体は浸透したSiおよび二次的に生成したSiCが成形体中の空隙部に存在することになるので、熱処理による寸法変化が非常に小さい特徴を有し、特に複雑形状品を調製する上で有利である。   In the SiC reactive sintering and molten Si impregnation processes, a mixture of SiC fine powder and C powder is molded and then heated at a high temperature of about 1450 to 1500 ° C. to penetrate the molten Si into the molded body. At the same time, reaction sintering proceeds. A part of the infiltrated Si reacts with C in the molded body to generate SiC secondarily, and the rest fills the voids in the molded body to form a dense sintered body. In this sintered body, since the infiltrated Si and the secondary SiC are present in the voids in the molded body, the dimensional change due to the heat treatment is very small, especially for the preparation of complex shapes. This is advantageous.

また、SiCの反応焼結体中に残存するSi量は10〜20質量%程度になるため、Siの融点(1414℃)以上の使用温度範囲では、急激に構造強度が低下する場合があるが、その融点までの使用温度範囲においては、常用温度とほぼ同程度の構造強度を維持できる。   In addition, since the amount of Si remaining in the SiC reaction sintered body is about 10 to 20% by mass, the structural strength may suddenly decrease in the operating temperature range above the melting point of Si (1414 ° C.). In the use temperature range up to the melting point, the structural strength almost the same as the normal temperature can be maintained.

なお、上記細孔の形成方法としては、特に限定されるものではない。すなわち、上記平板状成形体の表面に形成される複数の溝から形成する方法のみではなく、以下に示すような中子等を使用した方法で形成することも可能である。   The method for forming the pores is not particularly limited. That is, not only a method of forming from a plurality of grooves formed on the surface of the flat plate-shaped body, but also a method using a core as shown below can be used.

すなわち、本発明に係る反応焼結炭化ケイ素構造体の製造方法として、炭化ケイ素粉末と炭素粉末とバインダーとを混合して成る原料混合体を、加圧軸方向に移動が固定されていない(すなわち軸方向に移動可能な)中子を配置した成形型に充填しプレス成形することにより上記中子に対応する細孔を内部に備える成形体を形成し、得られた成形体について脱バインダー処理を実施した後に加熱し、溶融シリコンを含浸して反応焼結せしめて焼結体とするように実施しても良い。   That is, as a method for producing a reaction sintered silicon carbide structure according to the present invention, a raw material mixture obtained by mixing silicon carbide powder, carbon powder and a binder is not fixed in movement in the pressure axis direction (ie, A molded body having pores corresponding to the core is formed by filling a mold having a core (movable in the axial direction) and press-molding, and the resulting molded body is subjected to binder removal treatment. After carrying out, it may be heated and impregnated with molten silicon and reacted and sintered to form a sintered body.

上記製造方法によれば、成形型内に配置した中子の形状に対応した細孔を成形体内部に容易に形成することができる。   According to the manufacturing method, pores corresponding to the shape of the core disposed in the mold can be easily formed in the molded body.

さらに、本発明に係る反応焼結炭化ケイ素構造体の製造方法として、炭化ケイ素粉末と炭素粉末とから成る原料混合体に溶媒およびバインダーを添加してスラリーを作製し、中子を配置した成形型に上記スラリーを鋳込み、ゲルキャスティング法あるいはスリップキャスティング法で成形することにより上記中子の形状に対応する細孔を内部に有する成形体を形成し、得られた成形体に対して脱バインダー処理を実施した後に、この脱脂体を加熱し、溶融シリコンを含浸して反応焼結せしめて焼結体とするように構成しても良い。   Further, as a method for producing a reaction sintered silicon carbide structure according to the present invention, a molding die in which a slurry is prepared by adding a solvent and a binder to a raw material mixture composed of silicon carbide powder and carbon powder, and a core is disposed. The above slurry is cast into a molded body having a pore corresponding to the shape of the core by molding by a gel casting method or a slip casting method, and a binder removal treatment is performed on the obtained molded body. After implementation, the degreased body may be heated, impregnated with molten silicon, and subjected to reactive sintering to form a sintered body.

ここで上記ゲルキャスティング法は、ゲル状の原料混合体を成形型に充填し乾燥させて所定形状の成形体を得る方法であり、スリップキャスティング法は水等の分散媒を加えてスラリー状にした原料混合体を成形型に注入し乾燥させて所定形状の成形体を得る方法である。   Here, the gel casting method is a method in which a gel-shaped raw material mixture is filled in a mold and dried to obtain a molded body having a predetermined shape, and the slip casting method is made into a slurry by adding a dispersion medium such as water. In this method, a raw material mixture is poured into a mold and dried to obtain a molded body having a predetermined shape.

上記製造方法においても、成形型内に配置した中子の形状に対応した細孔を成形体内部に容易に形成することができる。   Also in the above manufacturing method, pores corresponding to the shape of the core disposed in the mold can be easily formed in the molded body.

また、本発明に係る反応焼結炭化ケイ素構造体の製造方法として、炭化ケイ素粉末と炭素粉末とから成る原料混合体に溶媒およびバインダーを添加混練して混練物を作製し、この混練物をハニカム形状の口金を経由して押出し成形し、あるいはワイヤー状の中子を混練物に挿入しながら押し出し成形することにより、上記口金または中子の形状に対応する細孔を内部に形成した成形体を調製し、この成形体に対して脱バインダー処理を実施した後に、加熱し反応焼結せしめて焼結体を形成すると同時に、この焼結体に溶融シリコンを含浸させて緻密化するように構成しても良い。   In addition, as a method for producing a reaction sintered silicon carbide structure according to the present invention, a kneaded product is prepared by adding and kneading a solvent and a binder to a raw material mixture composed of silicon carbide powder and carbon powder. A molded body in which pores corresponding to the shape of the die or core are formed by extrusion molding via a die having a shape or extrusion molding while inserting a wire-like core into a kneaded product. After preparing and removing the binder from this molded body, it is heated and reaction-sintered to form a sintered body. At the same time, this sintered body is impregnated with molten silicon to be densified. May be.

上記製造方法においても、ハニカム形状の口金あるいはワイヤー状の中子を挿入しながら押し出し成形することにより、上記口金の形状または混練物に挿入した中子の形状に対応した細孔を成形体内部に容易に形成することができる。   Also in the above manufacturing method, pores corresponding to the shape of the die or the shape of the core inserted into the kneaded product are formed in the molded body by extrusion molding while inserting the honeycomb-shaped die or the wire-shaped core. It can be formed easily.

上記した反応焼結炭化ケイ素構造体の製造方法において、前記細孔の内面に窒化ホウ素(BN)を付着させた状態で溶融シリコンを含浸せしめることが好ましい。このBNを細孔内面に予め付着させて状態で溶融シリコンを含浸せしめることにより、細孔の内面に過剰なシリコンが付着することが効果的に防止でき、寸法精度が高い細孔を形成することができる。   In the method for producing the reaction-sintered silicon carbide structure described above, it is preferable to impregnate molten silicon with boron nitride (BN) attached to the inner surface of the pore. By preliminarily adhering this BN to the inner surface of the pores and impregnating with molten silicon, it is possible to effectively prevent excessive silicon from adhering to the inner surface of the pores and form pores with high dimensional accuracy. Can do.

すなわち、前記反応焼結炭化ケイ素の焼結工程は、溶融した金属シリコンを焼結体に含浸するプロセスでもあり、焼結後に過剰なシリコンが焼結体表面に付着する現象が往々に現れる。この過剰シリコンの付着は、焼結体全表面で生じる可能性があるため、上述の方法で形成した細孔を埋めたり、あるいは細孔断面を減少させたりする不具合が発生することが懸念される。   That is, the reaction-sintered silicon carbide sintering step is also a process of impregnating a sintered body with molten metal silicon, and a phenomenon that excessive silicon adheres to the surface of the sintered body after sintering often appears. Since this excessive silicon adhesion may occur on the entire surface of the sintered body, there is a concern that problems such as filling the pores formed by the above-described method or reducing the cross-section of the pores may occur. .

このような不具合を解消するためには、溶融シリコンに対する濡れ性が悪い窒化ホウ素(BN)を、少なくとも細孔となる溝の内表面および隣接する板状成形体の背面に部分的に付着させた状態で溶融シリコンを含浸せしめることにより、当該細孔の内表面へ過剰なシリコンの付着が効果的に抑制でき、形状精度および仕上がり状態が良好な細孔を形成することが可能になる。   In order to solve such a problem, boron nitride (BN) having poor wettability with respect to molten silicon was partially adhered to at least the inner surface of the groove to be a pore and the back surface of the adjacent plate-shaped molded body. By impregnating with molten silicon in a state, it is possible to effectively suppress the adhesion of excessive silicon to the inner surface of the pores, and it is possible to form pores with good shape accuracy and finished state.

また、上記のような溶融シリコンに対する濡れ性が悪い物質の特性を利用して以下のような製造方法を採用することもできる。   Moreover, the following manufacturing method can also be employ | adopted using the characteristic of the substance with bad wettability with respect to the above molten silicons.

すなわち、本発明の反応焼結炭化ケイ素構造体の製造方法において、前記中子を、窒化ホウ素(BN)、BNコートしたカーボン、および表面を緻密化したカーボンから選択された1種の材料で形成すると共に、上記中子を成形型に配置した状態で成形体に溶融シリコンを含浸せしめることを特徴とする製造方法も採用できる。   That is, in the method for producing a reaction sintered silicon carbide structure according to the present invention, the core is formed of one material selected from boron nitride (BN), BN-coated carbon, and carbon whose surface is densified. In addition, a manufacturing method characterized by impregnating the molded body with molten silicon in a state where the core is placed in a mold can be employed.

なお、表面を緻密化したカーボンとは、その表面粗さを10μmRa以下、好ましくは5μmRa以下に調整したグラッシーカーボンを意味する。上記製造方法で使用するBN、BNコートしたカーボン、および表面を緻密化したカーボンは、いずれも溶融シリコンに対する濡れ性が悪い物質である。そのため、上記材料のいずれかで構成した中子を成形型内部に配置し、中子と共に焼結体に溶融シリコンを含浸して一体化した場合においても、過剰なシリコンが焼結体に付着することがなく、焼結体自身や細孔の寸法精度を高く維持することができる。また、含浸したシリコンによる中子の凝着が少ないため、焼結体から中子を容易に取り出し分離することが可能になる。   The carbon whose surface is densified means a glassy carbon whose surface roughness is adjusted to 10 μmRa or less, preferably 5 μmRa or less. BN, BN-coated carbon, and carbon whose surface is densified used in the above production method are all substances having poor wettability to molten silicon. Therefore, even when the core made of any of the above materials is placed inside the mold and the sintered body is impregnated with the molten silicon and integrated with the core, excess silicon adheres to the sintered body. Therefore, the dimensional accuracy of the sintered body itself and the pores can be kept high. Further, since the core is less adhered to the impregnated silicon, the core can be easily taken out and separated from the sintered body.

さらに、本発明の反応焼結炭化ケイ素構造体の製造方法において、前記成形体を作製した後に、窒化ホウ素(BN)、BNコートしたカーボン、および表面を緻密化したカーボンから選択された1種の材料から成る中子を上記成形体に挿入した状態で、成形体に溶融シリコンを含浸せしめることにより、中子の形状に対応した細孔を形成するような製造方法とすることもできる。   Furthermore, in the method for producing a reaction-sintered silicon carbide structure of the present invention, after producing the molded body, one type selected from boron nitride (BN), BN-coated carbon, and carbon whose surface is densified. A manufacturing method in which pores corresponding to the shape of the core are formed by impregnating the molded body with molten silicon in a state where the core made of the material is inserted into the molded body.

すなわち、成形体を予め作製した後に、前記BN、BNコートしたカーボン、および表面を緻密化したカーボンから選択された1種の材質からなる中子を挿入した上で、溶融シリコンを含浸する方法によっても、前記と同様に過剰なシリコンの焼結体への付着を防止する効果が得られる。特に従来の材質からなる中子を使用する方法に加えて、表面に付着する過剰のシリコンを抑制するこれらの方法を併用することにより、中子の形状に対応し寸法精度が優れた細孔が内部に形成された反応焼結炭化ケイ素構造体を効率的に製造することが可能になる。   That is, by preparing a molded body in advance and then inserting a core made of one material selected from the above-mentioned BN, BN-coated carbon, and carbon whose surface is densified, and then impregnating with molten silicon As described above, the effect of preventing the excessive silicon from adhering to the sintered body can be obtained. In particular, in addition to the conventional method of using a core made of a material, by using these methods to suppress excessive silicon adhering to the surface, pores with excellent dimensional accuracy corresponding to the shape of the core can be obtained. It becomes possible to efficiently produce the reaction sintered silicon carbide structure formed inside.

また、本発明に係る反応焼結炭化ケイ素構造体の製造方法において、前記溝付きの板状成形体の本体部を、ダイプレス法、押出し成形法、鋳込み成形法、射出成形法、ドクターブレード成形法のいずれかの成形法を用いて形成する一方、板状成形体の溝部を型押しによる直接形状付与処理または生加工処理によって形成する製造方法を採用することもできる。   Further, in the method for producing a reaction sintered silicon carbide structure according to the present invention, the body part of the grooved plate-like molded body is formed by a die press method, an extrusion molding method, a casting molding method, an injection molding method, a doctor blade molding method. On the other hand, it is also possible to employ a manufacturing method in which the groove portion of the plate-shaped molded body is formed by a direct shape imparting process by stamping or a raw processing process.

すなわち、溝付きの成形体の製造方法としては、乾式・湿式のダイプレス法、押出し成形法、鋳込み成形法、射出成形法、ドクターブレード成形法のいずれかを用いることが可能であり、また型押しによる直接形状付与処理または生加工処理を組合せることにより、所定の高い寸法精度を有する細孔が形成された反応焼結炭化ケイ素構造体を効率的に製造することができる。   That is, as a method for producing a grooved molded body, any one of a dry / wet die press method, an extrusion molding method, a casting molding method, an injection molding method, and a doctor blade molding method can be used. By combining the direct shape imparting process or the raw processing process with the above, it is possible to efficiently produce a reaction sintered silicon carbide structure in which pores having a predetermined high dimensional accuracy are formed.

さらに、本発明に係る反応焼結炭化ケイ素構造体の製造方法において、反応焼結後における前記細孔の内面に、サンドブラスト処理またはウォーターブラスト処理を実施することにより前記細孔内面を高い寸法精度で仕上げることが可能になる。   Furthermore, in the method for producing a reaction-sintered silicon carbide structure according to the present invention, the inner surface of the pores after the reaction sintering is subjected to sand blasting or water blasting so that the inner surface of the pores can be obtained with high dimensional accuracy. It becomes possible to finish.

すなわち、前記反応焼結炭化ケイ素の焼結工程および溶融した金属シリコンを焼結体に含浸する工程においては、場合によっては焼結後に過剰なシリコンが焼結体表面に付着する現象が発生し、特に細孔内面においては過剰シリコンの付着が完全に防止できない部分が残る可能性がある。このような部分については、本仕上げ加工方法として細孔内面にサンドブラストまたはウォーターブラストを適用することにより、焼結体の表面および細孔の内面に付着していた過剰のシリコンを迅速容易に除去することができ、構造体の仕上がり精度を大幅に向上させることが可能となる。   That is, in the reaction-sintered silicon carbide sintering step and the step of impregnating the molten metal silicon into the sintered body, in some cases, a phenomenon occurs in which excessive silicon adheres to the surface of the sintered body after sintering, In particular, on the inner surface of the pore, there is a possibility that a portion where excessive silicon adhesion cannot be completely prevented remains. For these parts, sandblasting or water blasting is applied to the inner surface of the pore as the final finishing method, so that excess silicon adhering to the surface of the sintered body and the inner surface of the pore is quickly and easily removed. Therefore, it is possible to greatly improve the finishing accuracy of the structure.

また、本発明に係る反応焼結炭化ケイ素構造体は、上記製造方法にしたがって製造された細孔を備える反応焼結炭化ケイ素焼結体から成ることを特徴とする。   The reaction-sintered silicon carbide structure according to the present invention is characterized by comprising a reaction-sintered silicon carbide sintered body having pores manufactured according to the above-described manufacturing method.

本発明に係る反応焼結炭化ケイ素構造体の製造方法によれば、軟質な成形体の段階で溝を形成して精細な細孔の基本構造を組み立てたり、中子を使用して成形体内部に精細な細孔を形成したりしているため、複雑形状の細孔を備えた構造体を容易かつ迅速に製造することが可能になり、特に細孔を熱放射管や熱媒流路としたコンパクトな熱交換器等の小型機器を実現することができる。   According to the method for producing a reaction sintered silicon carbide structure according to the present invention, a groove is formed at the stage of a soft molded body to assemble a basic structure of fine pores, or a core is used to In addition, it is possible to easily and quickly manufacture a structure having complex-shaped pores, and in particular, the pores can be used as heat radiation tubes and heat medium flow paths. A compact device such as a compact heat exchanger can be realized.

また、内部に精細な細孔を形成した成形体を脱脂後、溶融シリコンを含浸して反応焼結せしめて焼結体とするため、焼結体全体が緻密に形成でき、かつ細孔を形成するために重ねた複数の板状成形体の接合部も緻密に形成でき、剥離や割れの発生がない信頼性が優れた構造体を得ることが可能になる。   In addition, since the compact with fine pores inside is degreased and impregnated with molten silicon and reactively sintered to form a sintered body, the entire sintered body can be densely formed and pores can be formed. Therefore, it is possible to form densely joined portions of a plurality of stacked plate-like molded bodies, and to obtain a highly reliable structure that is free from peeling and cracking.

次に、本発明に係る炭化ケイ素構造体の製造方法の実施例について、特に細孔が形成され炭化ケイ素の反応焼結によって構造体の本体を形成した実施例を以下に比較例と共に説明する。図1は、本発明に係る炭化ケイ素構造体の製造方法に従って細孔を形成し反応焼結によって構造体を製造するプロセスの流れを簡潔に表した製造フロー図である。   Next, examples of the method for manufacturing a silicon carbide structure according to the present invention will be described below together with comparative examples, in particular, examples in which pores are formed and the main body of the structure is formed by reactive sintering of silicon carbide. FIG. 1 is a production flow diagram briefly showing the flow of a process for producing pores and producing a structure by reactive sintering in accordance with the method for producing a silicon carbide structure according to the present invention.

[実施例1]
炭化ケイ素(SiC)粉末と炭素(C)粉末とから成る原料混合体に成形用バインダーを加えて平均粒径が150μmの造粒粉を作製した。次に得られた造粒粉を成形型に充填しプレス成形することにより、縦100mm×横100mm×厚さ6mmの平板状成形体を多数作製した。次に、直径が2mmの超硬ドリルを備えた縦型フライス研削盤を使用し、上記各平板状成形体の表面に幅3mm×深さ3mmの矩形断面形状を有する溝1を一方向に形成することにより、図2に示すような溝付き平板状成形体2を調製した。溝1のピッチは6mmとし、溝1,1間に形成される成形体本体の壁厚は3mmとした。
[Example 1]
A molding binder was added to a raw material mixture composed of silicon carbide (SiC) powder and carbon (C) powder to produce a granulated powder having an average particle size of 150 μm. Next, the obtained granulated powder was filled in a mold and press-molded to produce a large number of flat molded bodies having a length of 100 mm × width of 100 mm × thickness of 6 mm. Next, using a vertical milling grinder equipped with a carbide drill having a diameter of 2 mm, grooves 1 having a rectangular cross-sectional shape having a width of 3 mm and a depth of 3 mm are formed in one direction on the surface of each flat plate-shaped molded body. By doing so, a grooved flat plate-like molded body 2 as shown in FIG. 2 was prepared. The pitch of the grooves 1 was 6 mm, and the wall thickness of the molded body formed between the grooves 1 and 1 was 3 mm.

次に、図2に示すように上記平板状成形体2を10枚積層し、平板状成形体2同士の接触面に有機系接着剤を塗布して仮接合し積層体3を形成した。積層体3の最上部には、溝を形成していない溝なし平板状成形体4を接合した。各接合層の厚さは200〜300μm以下となるように、有機系接着剤の塗布量を調節した。この積層体3の内部には、上記溝付き板状成形体2に形成された溝1と隣接した板状成形体2、4の背面で囲まれた細孔5が多数形成されている。   Next, as shown in FIG. 2, ten of the flat plate-like molded bodies 2 were laminated, and an organic adhesive was applied to the contact surfaces of the flat plate-like molded bodies 2 to temporarily bond them to form a laminated body 3. A flat plate-like molded body 4 having no grooves is joined to the top of the laminate 3. The application amount of the organic adhesive was adjusted so that the thickness of each bonding layer was 200 to 300 μm or less. A large number of pores 5 surrounded by the back surfaces of the plate-like molded bodies 2 and 4 adjacent to the groove 1 formed in the grooved plate-like molded body 2 are formed in the laminated body 3.

次に、上記のように調製した積層体3に対して脱バインダー処理を実施した。この脱バインダー処理は、窒素ガス気流中で積層体3を加熱し温度800℃まで昇温して2時間保持することにより実施し、成形体中に含有されていたバインダーを炭化または除去し脱脂体とした。   Next, the binder removal process was implemented with respect to the laminated body 3 prepared as mentioned above. This debinding treatment is carried out by heating the laminate 3 in a nitrogen gas stream, raising the temperature to 800 ° C. and holding for 2 hours, and carbonizing or removing the binder contained in the molded body to remove the degreased body. It was.

その後、得られた脱脂体に対して溶融シリコンを含浸せしめて一体化し、図2に示すような多数の細孔5を内部に備える反応焼結炭化ケイ素構造体6を調製した。ここで上記溶融シリコンの含浸操作は、当該積層体(接合成形体)3にシリコン金属を接触させて載置した状態で、真空中で温度1450℃にて1時間加熱保持することにより実施した。   Thereafter, the obtained degreased body was impregnated with molten silicon and integrated to prepare a reaction sintered silicon carbide structure 6 having a large number of pores 5 as shown in FIG. Here, the molten silicon impregnation operation was performed by heating and holding in a vacuum at a temperature of 1450 ° C. for 1 hour in a state where silicon metal was placed in contact with the laminate (joined molded body) 3.

但し、上記溶融シリコンを含浸せしめた反応焼結炭化ケイ素構造体6においては、細孔5の内面および構造体外周の一部に過剰シリコンの付着が認められたため、当該部にサンドブラストによる仕上げ加工を実施した。その結果、良好な寸法精度および平滑な内面を有する細孔5が形成された反応焼結炭化ケイ素構造体6が得られた。   However, in the reaction-sintered silicon carbide structure 6 impregnated with the above-described molten silicon, excess silicon was found to adhere to the inner surface of the pores 5 and a part of the outer periphery of the structure. Carried out. As a result, a reaction sintered silicon carbide structure 6 in which pores 5 having good dimensional accuracy and a smooth inner surface were formed was obtained.

[実施例2]
炭化ケイ素粉末と炭素粉末とから成る混合粉末に、溶媒および固化成形用(ゲルキャスティング用)バインダーを添加し均一に混合して、スラリー(泥漿)を作製した。次に、図3に示すような、細孔を形成するための中子7を予め配置した成形型内に上記スラリーを注ぎ込み、固化成形用バインダーの反応によりゲル化した成形体を得た。細孔に相当する中子7の断面寸法は幅3mm×深さ3mmとし、成形体全体のサイズは縦105mm×横105mm×高さ65mmとした。
[Example 2]
A solvent and a binder for solidification molding (for gel casting) were added to a mixed powder composed of silicon carbide powder and carbon powder and mixed uniformly to prepare a slurry (slurry). Next, as shown in FIG. 3, the slurry was poured into a molding die in which cores 7 for forming pores were previously arranged, and a molded body gelled by the reaction of a solidifying molding binder was obtained. The cross-sectional dimension of the core 7 corresponding to the pores was 3 mm wide × 3 mm deep, and the overall size of the compact was 105 mm long × 105 mm wide × 65 mm high.

次に、上記のように調製した成形体を、乾燥室にて徐々に乾燥させた後、脱バインダー処理を実施した。この脱バインダー処理は、上記成形体を窒素ガス気流中で加熱し温度800℃まで昇温して2時間保持することにより実施した。   Next, after the molded body prepared as described above was gradually dried in a drying chamber, a binder removal treatment was performed. This debinding treatment was carried out by heating the molded body in a nitrogen gas stream, raising the temperature to 800 ° C., and holding for 2 hours.

次に、上記脱バインダー処理を実施した成形体に対して、溶融シリコンを含浸して一体化した。上記溶融シリコンの含浸操作は、当該成形体にシリコン金属を接触させて載置した状態で、真空中で温度1450℃まで加熱し、1時間保持することにより実施した。   Next, the molded body subjected to the debinding process was impregnated with molten silicon and integrated. The molten silicon impregnation operation was performed by heating to a temperature of 1450 ° C. in a vacuum and holding for 1 hour in a state where silicon metal was placed in contact with the compact.

なお、中子7を取り外して得られる細孔5の内面および構造体の外表面を観察したところ、細孔5の内面および構造体の外周の一部に過剰シリコンの付着が認められたため、当該付着部にサンドブラスト処理による仕上げ加工を実施した。その結果、良好な寸法精度および平滑な内面を有する細孔5が形成された反応焼結炭化ケイ素構造体6aが得られた。   In addition, when the inner surface of the pore 5 obtained by removing the core 7 and the outer surface of the structure were observed, adhesion of excess silicon was observed on the inner surface of the pore 5 and a part of the outer periphery of the structure. A finishing process was performed by sandblasting on the adhered part. As a result, a reaction sintered silicon carbide structure 6a in which pores 5 having good dimensional accuracy and a smooth inner surface were formed was obtained.

[実施例3]
実施例1と同様な方法で原料混合体を処理し、さらに溝加工を実施することにより、実施例1と同一寸法を有する溝付き平板状成形体2を多数作製した。これらの溝付き平板状成形体2を積層する前に、組み上げた際に細孔内面を形成する部分のみについて、マスクを用いたスプレー塗布法でBN粉末を付着させ、図4に示すように、溝1の内面にBN塗布層8を形成した。
[Example 3]
By processing the raw material mixture in the same manner as in Example 1 and further performing groove processing, a large number of grooved flat plate-like molded bodies 2 having the same dimensions as in Example 1 were produced. Before laminating these flat plate-like molded bodies 2 with grooves, BN powder is attached only by a spray coating method using a mask on the portion that forms the pore inner surface when assembled, as shown in FIG. A BN coating layer 8 was formed on the inner surface of the groove 1.

次に、上記のように溝1の内面にBN塗布層8を形成した10枚の溝付き平板状成形体2を順次積層し、成形体2同士の接触面に有機系接着剤を塗布して仮接合して積層体とした。各接合層の厚さが200〜300μm以下になるように、有機系接着剤の塗布量を調節した。   Next, ten grooved flat plate-like molded bodies 2 in which the BN coating layer 8 is formed on the inner surface of the groove 1 as described above are sequentially laminated, and an organic adhesive is applied to the contact surfaces of the molded bodies 2. The laminated body was temporarily joined. The application amount of the organic adhesive was adjusted so that the thickness of each bonding layer was 200 to 300 μm or less.

次に、この積層体に対して、脱バインダー処理を実施した。この脱バインダー処理は、上記積層体を窒素ガス気流中で加熱し温度800℃まで昇温して2時間保持することにより実施した。   Next, a binder removal treatment was performed on this laminate. This debinding treatment was carried out by heating the laminate in a nitrogen gas stream, raising the temperature to 800 ° C., and holding for 2 hours.

その後、上記脱バインダー処理した積層体に溶融シリコンを含浸せしめて一体化した。この溶融シリコンの含浸操作は、当該積層体(接合成形体)にシリコン金属を接触させて載置し、真空中で温度1450℃に加熱して1時間保持することにより実施した。その結果、実施例1と同様に精細な細孔が内部に多数形成された反応焼結SiC構造体が得られた。   Thereafter, the laminated body subjected to the binder removal treatment was impregnated with molten silicon and integrated. This molten silicon impregnation operation was carried out by placing silicon metal in contact with the laminate (joined molded body), heating to 1450 ° C. in vacuum, and holding for 1 hour. As a result, a reaction sintered SiC structure having a large number of fine pores formed therein was obtained as in Example 1.

なお、得られた構造体の細孔の内面および外表面を観察したところ、細孔の内部には大きな過剰シリコンの付着は認められず仕上げ加工は不要であるか、またはごく簡単な仕上げ加工のみを部分的に行うことにより、完全に付着部を除去することができた。また、構造体の外周面の一部には過剰シリコンの付着が認められたため、サンドブラストによる仕上げ加工を実施した。本実施例方法によれば、良好な寸法精度および平滑な内面を有する細孔が形成された反応焼結炭化ケイ素構造体が効率的に得られた。   In addition, when the inner surface and the outer surface of the pores of the obtained structure were observed, no large excess silicon adhered to the inside of the pores, and no finishing process was required or only a very simple finishing process was required. It was possible to completely remove the adhering portion by partially performing the above. In addition, since excess silicon was found to adhere to a part of the outer peripheral surface of the structure, finishing processing was performed by sandblasting. According to this example method, a reaction sintered silicon carbide structure in which pores having good dimensional accuracy and a smooth inner surface were formed was efficiently obtained.

[実施例4]
BN焼結体からなる棒を中子として成形型内部に配置した以外は実施例2と同様に原料混合体(ゲルキャスティング用スラリー)を作製し、上記成形型内にスラリーを注ぎ込み、反応によりゲル化させることにより、実施例2と同一寸法の成形体を得た。この成形体の細孔の全てにBN焼結体から成る棒が挿入された状態にあり、BN焼結体から成る棒(中子)と細孔とのクリアランスは平均で0.3mm以下とした。
[Example 4]
A raw material mixture (slurry for gel casting) was prepared in the same manner as in Example 2 except that a rod made of a BN sintered body was placed inside the mold as a core, and the slurry was poured into the mold and reacted to form a gel. As a result, a molded body having the same dimensions as in Example 2 was obtained. A rod made of a BN sintered body is inserted into all the pores of the molded body, and the clearance between the rod (core) made of the BN sintered body and the pores is 0.3 mm or less on average. .

次に、BN焼結体から成る棒が挿入された状態で成形体を脱脂後、そのまま溶融シリコンを含浸せしめて緻密に一体化した。なお、上記脱バインダー処理は、成形体を窒素ガス気流中で温度800℃まで加熱昇温して2時間保持することにより実施した。また、溶融シリコンの含浸操作は、当該成形体にシリコン金属を接触させて載置した状態で、真空中で温度1450℃まで加熱し1時間保持することにより実施した。焼結後は、中子としてのBN焼結体棒と溶融シリコンとの付着は全く観察されず、各中子は簡単なブラストにより容易に崩壊して除去することが可能であった。上記の中子としてのBN焼結体棒を除去することにより、中子の跡に細孔が形成された反応焼結SiC構造体が得られた。   Next, the molded body was degreased in a state in which a rod made of a BN sintered body was inserted, and then impregnated with molten silicon as it was and integrated densely. In addition, the said binder removal process was implemented by heating and heating up a molded object to the temperature of 800 degreeC in nitrogen gas stream, and hold | maintaining for 2 hours. Further, the molten silicon impregnation operation was performed by heating to 1450 ° C. in a vacuum and holding for 1 hour in a state where silicon metal was placed in contact with the molded body. After sintering, adhesion between the BN sintered body rod as the core and the molten silicon was not observed at all, and each core could be easily collapsed and removed by simple blasting. By removing the BN sintered body rod as the core, a reaction sintered SiC structure in which pores were formed in the trace of the core was obtained.

得られた構造体の細孔および外表面を観察すると、各細孔の内部には大きな過剰シリコンの付着は観察されず仕上げ加工は殆ど不要の状態であったが、極一部について簡単な仕上げ加工のみを部分的に実施した。また、構造体の外周面の一部には過剰シリコンの付着が認められたため、サンドブラストによる仕上げ加工を実施した。本実施例方法によれば、良好な寸法精度および平滑な内面を有する細孔が形成された反応焼結炭化ケイ素構造体が効率的に得られた。   When the pores and outer surface of the obtained structure were observed, no large excess silicon adhered to the inside of each pore and the finishing process was almost unnecessary. Only processing was partially performed. In addition, since excess silicon was found to adhere to a part of the outer peripheral surface of the structure, finishing processing was performed by sandblasting. According to this example method, a reaction sintered silicon carbide structure in which pores having good dimensional accuracy and a smooth inner surface were formed was efficiently obtained.

[実施例5]
炭化ケイ素粉末と炭素粉末とから成る原料混合体に溶媒およびバインダーを添加混練して混練物を作製した。次に、この混練物をハニカム状の口金を経由して押出成形して細孔を形成した点以外は、構造体の寸法を含めて実施例2と同様の条件で処理することにより、多数の細孔を内部に形成した反応焼結SiC構造体を製造した。
[Example 5]
A kneaded product was prepared by adding and kneading a solvent and a binder to a raw material mixture composed of silicon carbide powder and carbon powder. Next, this kneaded product was processed under the same conditions as in Example 2 including the dimensions of the structure, except that the pores were formed by extrusion molding through a honeycomb-shaped die. A reaction sintered SiC structure having pores formed therein was manufactured.

但し、実施例5に係る構造体の細孔内面および外周面の一部に過剰シリコンの付着が認められたため、当該付着部にサンドブラスト処理による仕上げ加工を実施した。その結果、良好な寸法精度および平滑な内面を有する細孔が形成された反応焼結炭化ケイ素構造体が効率的に得られた。   However, since excess silicon was found to adhere to a part of the inner surface and the outer peripheral surface of the pores of the structure according to Example 5, finishing processing was performed on the adhesion portion by sandblasting. As a result, a reaction sintered silicon carbide structure in which pores having good dimensional accuracy and a smooth inner surface were formed was efficiently obtained.

[実施例6]
実施例5の製造方法において、成形体の細孔に対応する位置にBN焼結体から成る棒を挿入した後に、脱脂処理(脱バインダー処理)および溶融シリコンの含浸操作を実施した点以外は、実施例5と同様に処理することにより、多数の細孔を内部に形成した実施例6に係る反応焼結炭化ケイ素構造体を製造した。
[Example 6]
In the manufacturing method of Example 5, after inserting a rod made of a BN sintered body at a position corresponding to the pores of the molded body, a degreasing treatment (debinding treatment) and an impregnation operation with molten silicon were performed, By treating in the same manner as in Example 5, a reaction sintered silicon carbide structure according to Example 6 having a large number of pores formed therein was produced.

この反応焼結SiC構造体の細孔内部および外表面を観察したところ、各細孔の内部には大きな過剰シリコンの付着は認められず仕上げ加工はほぼ不要であった。なお、極一部については簡単な仕上げ加工のみを部分的に実施した。一方、構造体の外表面の一部には過剰シリコンの付着が認められたため、当該付着部にサンドブラストによる仕上げ加工を実施した。本実施例方法により、良好な寸法精度および平滑な内面を有する細孔が形成された反応焼結炭化ケイ素構造体が効率的に得られた。   When the inside and outside surfaces of the pores of this reaction sintered SiC structure were observed, no large excess silicon was found to adhere to the inside of each pore, and finishing was almost unnecessary. In addition, only a simple finishing process was partially performed on a very small part. On the other hand, since excess silicon was found to adhere to a part of the outer surface of the structure, finishing processing by sandblasting was performed on the attached portion. By this example method, a reaction sintered silicon carbide structure in which pores having good dimensional accuracy and a smooth inner surface were formed was efficiently obtained.

[比較例1]
実施例1と比較する製造方法として、炭化ケイ素粉末と炭素粉末とから成る原料混合体に成形用バインダーを添加して造粒粉を作製した後に、この造粒粉を冷間静水圧プレス(CIP)成形し、縦100mm×横100mm×厚さ60mmのブロック状の成形体を作製した。直径1〜2mmの超硬ドリルを備えた縦型フライス研削盤を使用して、上記ブロック状の成形体に縦3mm×横3mmの断面形状を有する細孔を一方向に形成した。溝間のピッチは6mmに設定した。
[Comparative Example 1]
As a manufacturing method compared with Example 1, after forming a granulated powder by adding a molding binder to a raw material mixture composed of silicon carbide powder and carbon powder, the granulated powder was subjected to cold isostatic pressing (CIP). ) To form a block-shaped molded body having a length of 100 mm × width of 100 mm × thickness of 60 mm. Using a vertical milling machine equipped with a carbide drill having a diameter of 1 to 2 mm, pores having a cross-sectional shape of 3 mm in length and 3 mm in width were formed in one direction in the block-shaped molded body. The pitch between the grooves was set to 6 mm.

しかしながら、各細孔の長さが約30mm以上になると、隣接する細孔同士を隔てる厚さ3mmの隔壁を形成することが困難となり、加工が不可能であった。すなわち、通常のCIP生形法から細孔の生加工プロセスまでを利用した比較例1に係る製造方法では、上記のような長大な寸法を有する細孔を高密度に備える構造体の作製は不可能であることが判明した。   However, when the length of each pore is about 30 mm or more, it becomes difficult to form a partition wall having a thickness of 3 mm that separates adjacent pores, and processing is impossible. That is, in the manufacturing method according to Comparative Example 1 using the normal CIP green forming method to the fine pore processing process, it is not possible to produce a structure having high-density pores having long dimensions as described above. It turned out to be possible.

これに対して、本実施例に係る反応焼結炭化ケイ素構造体では、特に細孔の長さが30mm以上となる構造体や隣接する細孔間の焼結体厚さが3mm以下となるような精細な細孔構造を有する構造体を初めて実現することが可能になる。   On the other hand, in the reaction-sintered silicon carbide structure according to the present example, the thickness of the pores is particularly 30 mm or more and the thickness of the sintered body between adjacent pores is 3 mm or less. It becomes possible to realize a structure having a fine pore structure for the first time.

[比較例2]
比較例1に係る製造方法を改良する手段として、CIP成形したブロック状成形体を不活性雰囲気中において温度1800℃で仮焼し、構造強度高めた仮焼体の状態で同様に加工することを試みた。しかしながら、この仮焼体は成形体に比較して高強度ではあったが、成形体のような粘りに基づく靭性が殆ど現れず、ドリルによる穿孔作業時に作用する衝撃力によって簡単に破損したり、割れを発生したりする問題点があり、加工性の顕著な改善は全く認められなかった。
[Comparative Example 2]
As a means for improving the manufacturing method according to Comparative Example 1, the block-shaped molded body formed by CIP is calcined at a temperature of 1800 ° C. in an inert atmosphere, and similarly processed in the state of a calcined body with increased structural strength. Tried. However, this calcined body was higher in strength than the molded body, but almost no toughness based on stickiness like the molded body appeared, and was easily damaged by the impact force acting during drilling work with a drill, There was a problem of generating cracks, and no significant improvement in workability was observed.

[比較例3]
表面が緻密化しておらず表面粗さが20μm―Raであるカーボンからなる棒を中子として成形型内部に配置し、成形体の全ての細孔に上記カーボン棒を中子として挿入した点以外は、実施例2と同一の条件で成形型内に原料スラリーを注ぎ込み、ゲル化せしめて成形し、さらに脱バインダー処理および溶融シリコンの含浸操作を実施することにより比較例3に係る反応焼結炭化ケイ素構造体を調製した。
[Comparative Example 3]
Other than the point that the rod made of carbon whose surface is not densified and whose surface roughness is 20 μm-Ra is placed inside the mold as a core, and the carbon rod is inserted as a core into all the pores of the molded body The reaction sintered carbonization according to Comparative Example 3 is carried out by pouring the raw material slurry into the mold under the same conditions as in Example 2, gelling and molding, and further performing the binder removal treatment and the impregnation operation with molten silicon. A silicon structure was prepared.

しかしながら、この比較例3の構造体においては、反応焼結後に中子としてのカーボン棒と溶融シリコンとが顕著に反応した結果、相互に強固に接着していることが確認され、中子の除去は困難であり、細孔の形成は不可能であった。   However, in the structure of Comparative Example 3, as a result of the remarkable reaction between the carbon rod as the core and the molten silicon after the reaction sintering, it was confirmed that the core was firmly bonded to each other, and the core was removed. It was difficult to form pores.

上記各実施例および比較例に係る反応焼結炭化ケイ素構造体の対比から明らかなように、各実施例に係る製造方法によれば、軟質な成形体の段階で溝1を形成して精細な細孔5の基本構造を組み立てたり、中子7を使用して成形体内部に精細な細孔5を形成したりしているため、複雑形状の細孔5を備えた構造体6,6aを容易かつ迅速に製造することが可能になり、特に細孔5を熱放射管や熱媒流路としたコンパクトな熱交換器等の小型機器を実現することができる。   As is clear from the comparison of the reaction-sintered silicon carbide structures according to the above examples and comparative examples, according to the manufacturing method according to each example, the grooves 1 are formed at the stage of the soft molded body and the fine structure is obtained. Since the basic structure of the pore 5 is assembled or the fine pore 5 is formed inside the molded body using the core 7, the structures 6 and 6 a having the complex-shaped pore 5 are formed. It becomes possible to manufacture easily and quickly, and in particular, it is possible to realize a small device such as a compact heat exchanger having the pores 5 as heat radiation tubes or heat medium passages.

また、内部に精細な細孔5を形成した成形体を反応焼結させると同時に溶融シリコンを含浸せしめて形成されるため、焼結体全体が緻密に形成でき、かつ細孔5を形成するために重ねた複数の板状成形体2の接合部も緻密に形成でき、剥離や割れの発生がない信頼性が優れた構造体6,6aを得ることが可能になる。   Further, since the molded body having fine pores 5 formed therein is reacted and sintered and simultaneously impregnated with molten silicon, the entire sintered body can be formed densely and the pores 5 can be formed. Further, the joined portions of the plurality of plate-like molded bodies 2 stacked on each other can be densely formed, and it is possible to obtain the structures 6 and 6a having excellent reliability with no peeling or cracking.

本発明に係る炭化ケイ素構造体の製造方法に従って細孔を形成し反応焼結によって構造体を製造するプロセスの流れを例示したプロセスフロー図。The process flow figure which illustrated the flow of the process which forms a pore according to the manufacturing method of the silicon carbide structure concerning the present invention, and manufactures a structure by reaction sintering. 溝付き平板状成形体を複数枚積層して細孔を有する構造体を製造する手順を示す斜視図。The perspective view which shows the procedure which laminates | stacks the flat plate-shaped molded object with a groove | channel, and manufactures the structure which has a pore. 複数の中子を配置した成形型内に原料混合体を充填することにより細孔を形成する状態を示す斜視図。The perspective view which shows the state which forms a pore by filling the raw material mixture in the shaping | molding die which has arrange | positioned the several core. 溝付き平板状成形体の溝の内面にBN塗布層を形成した状態を示す斜視図。The perspective view which shows the state which formed the BN application layer in the inner surface of the groove | channel of a flat plate-shaped molded object with a groove | channel.

符号の説明Explanation of symbols

1 溝
2 溝付き平板状成形体
3 積層体
4 溝なし平板状成形体
5 細孔
6,6a 反応焼結炭化ケイ素(SiC)構造体
7 中子
8 窒化ホウ素(BN)塗布層
DESCRIPTION OF SYMBOLS 1 Groove | channel 2 Flat plate-shaped molded object 3 Laminated body 4 Flat-shaped molded body 5 without a groove | channel Porous 6, 6a Reaction sintered silicon carbide (SiC) structure 7 Core 8 Boron nitride (BN) coating layer

Claims (10)

炭化ケイ素粉末と炭素粉末とバインダーとを混合して成る原料混合体を成形して溝付きの板状成形体を複数個作製し、これらの複数の板状成形体を接着剤で仮接合することにより上記溝を細孔として内部に備えた積層体を形成し、得られた積層体について脱バインダー処理を実施して脱脂体とした後に、この脱脂体を加熱し、溶融シリコンを含浸して反応焼結せしめて一体の焼結体とすることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 Forming a raw material mixture formed by mixing silicon carbide powder, carbon powder, and a binder to produce a plurality of grooved plate-shaped molded products, and temporarily bonding the plurality of plate-shaped molded products with an adhesive After forming a laminated body with the above grooves as pores and carrying out a debinding process on the obtained laminated body to obtain a degreased body, the degreased body is heated and impregnated with molten silicon to react. A method for producing a reaction-sintered silicon carbide structure, characterized by sintering to form an integral sintered body. 炭化ケイ素粉末と炭素粉末とバインダーとを混合して成る原料混合体を、加圧軸方向に移動が固定されていない中子を配置した成形型に充填しプレス成形することにより上記中子に対応する細孔を内部に備える成形体を形成し、得られた成形体について脱バインダー処理を実施した後にこの脱脂体を加熱し、溶融シリコンを含浸して反応焼結せしめて一体の焼結体とすることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 Corresponding to the above-mentioned core by filling the raw material mixture made by mixing silicon carbide powder, carbon powder and binder into a mold with a core that is not fixed in the direction of the pressure axis. After forming a molded body having pores to be formed and performing a binder removal treatment on the obtained molded body, the degreased body is heated, impregnated with molten silicon, and subjected to reactive sintering to form an integrated sintered body and A process for producing a reaction-sintered silicon carbide structure characterized in that: 炭化ケイ素粉末と炭素粉末とから成る原料混合体に溶媒およびバインダーを添加してスラリーを作製し、中子を配置した成形型に上記スラリーを鋳込み、ゲルキャスティング法あるいはスリップキャスティング法で成形することにより上記中子の形状に対応する細孔を内部に有する成形体を形成し、得られた成形体に対して脱バインダー処理を実施した後に、加熱し、溶融シリコンを含浸して反応焼結せしめて一体の焼結体とすることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 A slurry is prepared by adding a solvent and a binder to a raw material mixture composed of silicon carbide powder and carbon powder, and the slurry is cast into a mold having a core disposed therein, and then molded by gel casting method or slip casting method. After forming a molded body having pores corresponding to the shape of the core inside, and performing a binder removal treatment on the obtained molded body, it is heated and impregnated with molten silicon and subjected to reactive sintering. A method for producing a reaction-sintered silicon carbide structure, characterized by comprising an integral sintered body. 炭化ケイ素粉末と炭素粉末とから成る原料混合体に溶媒およびバインダーを添加混練して混練物を作製し、この混練物をハニカム形状の口金を経由して押出し成形し、あるいは混練物にワイヤー状の中子を挿入しながら押し出し成形することにより、上記口金または中子の形状に対応する細孔を内部に形成した成形体を調製し、この成形体に対して脱バインダー処理を実施した後に、この脱脂体を加熱し、溶融シリコンを含浸して反応焼結せしめて一体の焼結体とすることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 A kneaded product is prepared by adding a solvent and a binder to a raw material mixture composed of silicon carbide powder and carbon powder, and extruding the kneaded product through a honeycomb-shaped die, or forming a kneaded product in a wire shape. By extruding while inserting the core, a molded body in which pores corresponding to the shape of the die or core are formed is prepared, and after the binder is removed from the molded body, A method for producing a reaction sintered silicon carbide structure, characterized in that a degreased body is heated, impregnated with molten silicon and subjected to reaction sintering to form an integrated sintered body. 請求項1〜4のいずれかに記載の反応焼結炭化ケイ素構造体の製造方法において、前記細孔の内面に窒化ホウ素(BN)を付着させた状態で溶融シリコンを含浸せしめることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 The method for producing a reaction sintered silicon carbide structure according to any one of claims 1 to 4, wherein the molten silicon is impregnated with boron nitride (BN) attached to the inner surface of the pore. A method for producing a reaction sintered silicon carbide structure. 請求項2〜4のいずれかに記載の反応焼結炭化ケイ素構造体の製造方法において、前記中子を、窒化ホウ素(BN)、BNコートしたカーボン、および表面を緻密化したカーボンから選択された1種の材料で形成すると共に、上記中子を配置した状態で成形体に対して脱バインダー処理を実施し、引続き溶融シリコンを含浸せしめることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 5. The method for producing a reaction sintered silicon carbide structure according to claim 2, wherein the core is selected from boron nitride (BN), BN-coated carbon, and carbon whose surface is densified. A process for producing a reaction-sintered silicon carbide structure, characterized in that it is formed of one kind of material, the binder is removed from the molded body in a state where the core is disposed, and the molten silicon is subsequently impregnated. . 請求項2〜4のいずれかに記載の反応焼結炭化ケイ素構造体の製造方法において、前記成形体を作製した後に、窒化ホウ素(BN)、BNコートしたカーボン、および表面を緻密化したカーボンから選択された1種の材料から成る中子を上記成形体に挿入した状態で、成形体に対して脱バインダー処理を実施し、引続き溶融シリコンを含浸せしめることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 5. The method for producing a reaction sintered silicon carbide structure according to claim 2, wherein after forming the molded body, boron nitride (BN), BN-coated carbon, and carbon whose surface is densified. A reaction-sintered silicon carbide structure characterized in that a core made of one selected material is inserted into the molded body, and the molded body is debindered and subsequently impregnated with molten silicon. Body manufacturing method. 請求項1記載の反応焼結炭化ケイ素構造体の製造方法において、前記溝付きの板状成形体の本体部を、ダイプレス法、押出し成形法、鋳込み成形法、射出成形法、ドクターブレード成形法のいずれかの成形法を用いて形成する一方、板状成形体の溝部を型押しによる直接形状付与処理または生加工処理によって形成することを特徴とする反応焼結炭化ケイ素構造体の製造方法。 2. The method for producing a reaction sintered silicon carbide structure according to claim 1, wherein the body portion of the grooved plate-like molded body is formed by a die press method, an extrusion molding method, a casting molding method, an injection molding method, a doctor blade molding method. A method for producing a reaction-sintered silicon carbide structure, which is formed using any of the forming methods, and wherein the groove portion of the plate-shaped formed body is formed by a direct shape imparting process or a raw processing process by embossing. 請求項1〜8のいずれかに記載の反応焼結炭化ケイ素構造体の製造方法において、反応焼結後における前記細孔の内面に、サンドブラスト処理またはウォーターブラスト処理を実施することにより前記細孔内面を仕上げることを特徴とする反応焼結炭化ケイ素構造体の製造方法。 The method for producing a reaction-sintered silicon carbide structure according to any one of claims 1 to 8, wherein the inner surface of the pores after the reaction sintering is subjected to a sand blasting treatment or a water blasting treatment. A process for producing a reaction-sintered silicon carbide structure, characterized in that: 請求項1〜9のいずれかに記載の反応焼結炭化ケイ素構造体の製造方法により製造されたことを特徴とする反応焼結炭化ケイ素構造体。 A reaction-sintered silicon carbide structure produced by the method for producing a reaction-sintered silicon carbide structure according to claim 1.
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