JP2005286162A - 基板処理装置およびその処理方法 - Google Patents
基板処理装置およびその処理方法 Download PDFInfo
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- JP2005286162A JP2005286162A JP2004099129A JP2004099129A JP2005286162A JP 2005286162 A JP2005286162 A JP 2005286162A JP 2004099129 A JP2004099129 A JP 2004099129A JP 2004099129 A JP2004099129 A JP 2004099129A JP 2005286162 A JP2005286162 A JP 2005286162A
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- 239000000758 substrate Substances 0.000 title claims abstract description 235
- 238000000034 method Methods 0.000 title claims description 32
- 239000011521 glass Substances 0.000 claims abstract description 100
- 239000007788 liquid Substances 0.000 claims abstract description 45
- 239000000126 substance Substances 0.000 claims description 23
- 238000003672 processing method Methods 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000011282 treatment Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 description 33
- 238000004140 cleaning Methods 0.000 description 27
- 239000000243 solution Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005530 etching Methods 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004099129A JP2005286162A (ja) | 2004-03-30 | 2004-03-30 | 基板処理装置およびその処理方法 |
| US10/909,977 US20050028929A1 (en) | 2003-08-07 | 2004-08-03 | Substrate processing apparatus and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004099129A JP2005286162A (ja) | 2004-03-30 | 2004-03-30 | 基板処理装置およびその処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005286162A true JP2005286162A (ja) | 2005-10-13 |
| JP2005286162A5 JP2005286162A5 (enExample) | 2007-05-17 |
Family
ID=35184185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004099129A Pending JP2005286162A (ja) | 2003-08-07 | 2004-03-30 | 基板処理装置およびその処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005286162A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009054174A1 (ja) * | 2007-10-22 | 2009-04-30 | Sharp Kabushiki Kaisha | 液晶パネル用基板の製造方法及び液晶パネル用基板の製造装置 |
| JP2014209548A (ja) * | 2013-03-28 | 2014-11-06 | ウシオ電機株式会社 | 光照射装置 |
| JP2016140833A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社ブルー・スターR&D | 薄板状被洗浄物の洗浄装置 |
| CN112216631A (zh) * | 2019-07-11 | 2021-01-12 | 细美事有限公司 | 用于处理基板的装置和方法 |
-
2004
- 2004-03-30 JP JP2004099129A patent/JP2005286162A/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009054174A1 (ja) * | 2007-10-22 | 2009-04-30 | Sharp Kabushiki Kaisha | 液晶パネル用基板の製造方法及び液晶パネル用基板の製造装置 |
| JP2014209548A (ja) * | 2013-03-28 | 2014-11-06 | ウシオ電機株式会社 | 光照射装置 |
| JP2016140833A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社ブルー・スターR&D | 薄板状被洗浄物の洗浄装置 |
| CN112216631A (zh) * | 2019-07-11 | 2021-01-12 | 细美事有限公司 | 用于处理基板的装置和方法 |
| JP2021015977A (ja) * | 2019-07-11 | 2021-02-12 | セメス カンパニー,リミテッド | 基板処理装置及び基板処理方法 |
| JP7280225B2 (ja) | 2019-07-11 | 2023-05-23 | セメス カンパニー,リミテッド | 基板処理装置及び基板処理方法 |
| US11862491B2 (en) | 2019-07-11 | 2024-01-02 | Semes Co., Ltd. | Apparatus and method for treating substrate |
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