JP2005277173A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2005277173A JP2005277173A JP2004089494A JP2004089494A JP2005277173A JP 2005277173 A JP2005277173 A JP 2005277173A JP 2004089494 A JP2004089494 A JP 2004089494A JP 2004089494 A JP2004089494 A JP 2004089494A JP 2005277173 A JP2005277173 A JP 2005277173A
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- Prior art keywords
- layer
- opening
- semiconductor device
- substrate
- pad electrode
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010410 layer Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011241 protective layer Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 12
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
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- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004089494A JP2005277173A (ja) | 2004-03-25 | 2004-03-25 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004089494A JP2005277173A (ja) | 2004-03-25 | 2004-03-25 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005277173A true JP2005277173A (ja) | 2005-10-06 |
| JP2005277173A5 JP2005277173A5 (enExample) | 2007-05-17 |
Family
ID=35176487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004089494A Pending JP2005277173A (ja) | 2004-03-25 | 2004-03-25 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005277173A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007142374A (ja) * | 2005-11-14 | 2007-06-07 | Schott Ag | テーパ付き構造のプラズマ・エッチング |
| US8173543B2 (en) | 2006-07-27 | 2012-05-08 | Sanyo Semiconductor Co., Ltd. | Method of forming hole in semiconductor device using mask |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0358421A (ja) * | 1989-07-26 | 1991-03-13 | Nec Corp | 半導体装置の製造方法 |
| JP2002083936A (ja) * | 2000-09-08 | 2002-03-22 | Fujitsu Quantum Devices Ltd | 化合物半導体装置 |
| JP2002190477A (ja) * | 2000-12-22 | 2002-07-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2002319586A (ja) * | 2001-04-23 | 2002-10-31 | Sharp Corp | 半導体装置および無線通信システム |
| JP2003309221A (ja) * | 2002-04-15 | 2003-10-31 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
-
2004
- 2004-03-25 JP JP2004089494A patent/JP2005277173A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0358421A (ja) * | 1989-07-26 | 1991-03-13 | Nec Corp | 半導体装置の製造方法 |
| JP2002083936A (ja) * | 2000-09-08 | 2002-03-22 | Fujitsu Quantum Devices Ltd | 化合物半導体装置 |
| JP2002190477A (ja) * | 2000-12-22 | 2002-07-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2002319586A (ja) * | 2001-04-23 | 2002-10-31 | Sharp Corp | 半導体装置および無線通信システム |
| JP2003309221A (ja) * | 2002-04-15 | 2003-10-31 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007142374A (ja) * | 2005-11-14 | 2007-06-07 | Schott Ag | テーパ付き構造のプラズマ・エッチング |
| US8173543B2 (en) | 2006-07-27 | 2012-05-08 | Sanyo Semiconductor Co., Ltd. | Method of forming hole in semiconductor device using mask |
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