JP2005260270A - Resin-sealed semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which is reduced in size by increasing an occupation rate of chips in a semiconductor device package size and has realized a higher pin counts which has been conventionally difficult to achieve in a small package such as TSOP, in order to respond to a call for higher integration and higher performance of the resin-sealed semiconductor device. <P>SOLUTION: The resin-sealed semiconductor device 200 and 200A has such a structure that a plurality of terminal units 230, each having an internal terminal on the front face side and an external terminal on the rear face side in an integrated state, are arranged substantially in a plane in such a manner as to be electrically independent from each other, and the internal terminals of the terminal units 230 and terminals of a semiconductor element are electrically connected by wires 240, and then the whole body is sealed with resin with part of the external terminal of each terminal unit 230 being exposed to the outside. A lead 225 is integrally connected to each terminal unit 230 along the plane in which the plurality of terminals units 230 are arranged. The leads 225 are electrically independent from each other, and the semiconductor element 210 is mounted on the plurality of leads 225, being electrically insulated from these leads 225. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

  The present invention relates to a resin-encapsulated semiconductor device (plastic package) on which a semiconductor element is mounted, and more particularly to a semiconductor device that can cope with a reduction in package size and improve its mountability and a method for manufacturing the same.

In recent years, semiconductor devices are becoming increasingly integrated and highly integrated, as represented by LSI ASICs, due to the trend of high integration and miniaturization technology and the trend of high performance and light and thin electronic devices (current). It is becoming functional.
As a result, even in a sealed semiconductor device using a lead frame, the development trend has progressed through surface-mounted packages such as SOJ (Small Outline J-Leaded Package) and QFP (Quad Flat Package). , TSOP (Thin Small Outline Package) development to reduce the size of the package with the main axis being thin, and further to the LOC (Lead On Chip) structure for the purpose of improving chip storage efficiency by making the inside of the package three-dimensional Has progressed.
However, resin-encapsulated semiconductor device packages are required to have higher integration, higher functionality, and even higher pin counts, thickness reductions, and downsizing. As a result, there has been a limit in reducing the size of the package.
In addition, in a small package such as TSOP, there is a limit to the number of pins due to lead routing and pin pitch.

As described above, there is a demand for higher integration and higher functionality of resin-encapsulated semiconductor devices, and there is a need for further increase in the number of pins, thickness, and size of resin-encapsulated semiconductor device packages. Yes.
Under such circumstances, the present invention can increase the chip occupancy ratio in the semiconductor device package size, cope with the miniaturization of the semiconductor device, and reduce the mounting area on the circuit board, that is, mounting on the circuit board. An object of the present invention is to provide a resin-encapsulated semiconductor device capable of improving the density.
At the same time, it is intended to realize a further increase in the number of pins, which has been difficult for a conventional small package such as TSOP.

In order to achieve such an object, the resin-encapsulated semiconductor device of the present invention includes a plurality of terminal portions in a substantially flat plane each having an internal terminal on the front surface side and an external terminal on the back surface side. Resin is arranged so as to be electrically independent from each other, electrically connecting the internal terminals of the terminal section and the terminals of the semiconductor element with wires, and exposing a part of the external terminals of each terminal section to the outside. In a sealed resin-encapsulated semiconductor device, leads are integrally connected to the terminal portions along a plane on which the plurality of terminal portions are arranged, and the leads are electrically independent from each other. The semiconductor element is mounted on the plurality of leads in an electrically insulated manner.
An external electrode made of solder is provided on the external terminal surface exposed to the outside.
The terminals of the semiconductor element are arranged along substantially the center line of a pair of sides of the terminal surface of the semiconductor element, and the terminal part is along the pair of sides facing each other so as to sandwich the center line. It was set as the structure provided respectively.

  In the method for manufacturing a resin-encapsulated semiconductor device of the present invention, a plurality of terminal portions having an internal terminal on the front surface side and an external terminal on the back surface side are integrated in a substantially plane and electrically independent from each other. The resin-encapsulated semiconductor device in which the internal terminals of the terminal portions and the terminals of the semiconductor element are electrically connected with wires, and the entire external terminals of each terminal portion are resin-sealed so as to be exposed to the outside. In the manufacturing method of (A), the conductive substrate is etched, and a plurality of terminal portions having internal terminals on the front surface side and external terminals on the back surface side are integrally connected to each other, and the respective terminal portions are connected independently of each other. A circuit member creating step for creating a circuit member comprising: an outer frame member integrally connected via leads; and a semiconductor element mounting lead integrally connected to each terminal portion; and (B) a semiconductor element. The semiconductor element is electrically insulated and fixed to the mounting lead. A semiconductor element mounting step to be mounted, (C) a wire bonding step of electrically connecting the terminal of the semiconductor element and the internal terminal of the circuit member with a wire, and (D) exposing a part of each external terminal to the outside. And a resin sealing step for resin sealing the whole and (E) an outer frame member separation and removal step for cutting each connection lead of the circuit member and removing the outer frame member.

  In the present invention, under the situation where further integration and high functionality of a resin-encapsulated semiconductor device are required, the chip occupancy ratio in the semiconductor device package size is increased and the semiconductor device can be reduced in size. Thus, it is possible to provide a conductor device that can reduce the mounting area on the circuit board, that is, improve the mounting density on the circuit board. The present invention makes it possible to provide a resin-encapsulated semiconductor device that realizes a further increase in the number of pins, which was difficult for a conventional small package such as TSOP.

The present invention will be described below with reference to the drawings.
First, a first example of the resin-encapsulated semiconductor device of the present invention will be given.
FIG. 1A is a schematic cross-sectional view of a first example of a resin-encapsulated semiconductor device of the present invention, and FIG. 1B is a perspective view illustrating the internal configuration thereof. FIG. These are the schematic sectional drawings of the 2nd example.
In FIG. 1, 100 and 100A are resin-encapsulated semiconductor devices, 110 is a semiconductor element, 111 is a terminal (pad), 115 is a die attach material, 120 is a die pad, 130 is a terminal portion, 132 is an internal terminal portion, and 134 is External terminal portion 134A is an exposed portion, 140 is a wire, 150 is a sealing resin, 160 is silver plating, and 170 is an external electrode made of solder.
A resin-encapsulated semiconductor device 100 of the first example shown in FIG. 1 is manufactured using a circuit member that has been processed by etching, which will be described later, and the semiconductor element 110 is not a surface on the terminal (pad) 111 side. On the side, the die pad 120 is bonded and mounted via the die attach material 115, and the terminal (pad) 111 of the semiconductor element 110 and the internal terminal portion 132 of the terminal portion 130 are electrically connected by the wire 140, In addition, a part of the external terminal 134 of the terminal portion 130 is exposed to the outside, and the whole is sealed with a sealing resin 150.
The terminal portion 130 is integrated so that an internal terminal portion 132 for electrically connecting to a terminal (pad) 111 of the semiconductor element 110 and an external terminal portion 134 for connection to an external circuit are opposed to each other. And two-dimensionally in a substantially plane and are electrically independent of each other.
In the resin-encapsulated semiconductor device 100 of the first example shown in FIG. 1, the terminals (pads) 111 of the semiconductor element 110 are arranged along a pair of sides of the terminal surface of the semiconductor element 110, and the terminal portion 130. Are also provided on the outside of the semiconductor element 110 along the pair of sides.
The semiconductor device 100 shown in FIG. 1A is such that the die pad 120 is made thinner than the thickness of the terminal portion 130 and one surface is formed along the surface 132A of the internal terminal 132. The outer terminal 134 is recessed from the surface 134A toward the inner terminal.

  The semiconductor device 100A of the second example shown in FIG. 1C has an external electrode 170 made of solder on the surface 134A of the external terminal portion exposed to the outside of the semiconductor device 100 of the first example shown in FIG. When mounting on a circuit board, the solder is melted and solidified, and the external terminal portion 134 is electrically connected to the external circuit.

The semiconductor device shown in FIGS. 2A and 2B is a modification of the semiconductor device 100 of the first example shown in FIG. 1A, and is shown in FIGS. 2C and 2D. The semiconductor device shown is a modification of the semiconductor device 100A of the second example shown in FIG.
A semiconductor device 100a shown in FIG. 2A is obtained by forming a die pad 120 with a thickness of a terminal portion 130 in the semiconductor device 100 shown in FIG.
The semiconductor device 100b shown in FIG. 2B has the die pad 120 thinner than the terminal portion 130 in the semiconductor device 100 shown in FIG. 1A so that one surface is along the surface 134A of the external terminal 134. The internal terminal 132 side is recessed from the surface of the internal terminal 132 toward the external terminal side.
The semiconductor device 100c shown in FIG. 2C is the same as the semiconductor device 100A shown in FIG. 1C, except that the die pad 120 is formed to the thickness of the terminal portion 130 and the surface 134A of the external terminal 134 is made of solder. An electrode 170 is provided.
A semiconductor device 100d shown in FIG. 2D is formed so that the die pad 120 is thinner than the terminal portion 130 in the semiconductor device 100A shown in FIG. Therefore, the internal terminal 132 side has a structure that is recessed from the surface of the internal terminal 132 to the external terminal side.

Next, a third example of the resin-encapsulated semiconductor device of the present invention will be given.
FIG. 3A is a schematic cross-sectional view of a third example of the resin-encapsulated semiconductor device of the present invention, and FIG. 3B is a perspective view illustrating the internal configuration thereof, and FIG. These are the schematic sectional drawings of the 4th example.
3, 200 and 200A are resin-encapsulated semiconductor devices, 210 is a semiconductor element, 211 is a terminal (pad), 215 is a die attach material, 225 is a lead, 230 is a terminal portion, 232 is an internal terminal portion, 234 is External terminal portions, 234A are exposed portions, 240 is a wire, 250 is a sealing resin, 260 is silver plating, and 270 is an external electrode made of solder.
The semiconductor device 200 shown in FIG. 3A is provided with a lead 225 integrally connected to the terminal portion 230, and the semiconductor element 210 is mounted on the lead 225 via the die attach material 215. Although different from the semiconductor device 100 shown in a), the other points are the same.

  The semiconductor device 200A of the fourth example shown in FIG. 3C has an external electrode 270 made of solder on the surface 234A of the external terminal portion exposed to the outside of the semiconductor device 200 of the third example shown in FIG. When mounting on the circuit board, the solder is melted and solidified, and the external terminal portion 234 is electrically connected to the external circuit.

The resin-encapsulated semiconductor device of the present invention is an area-reduced package in which the package area is not significantly different from the area of the semiconductor element as shown in FIG. 1, FIG. 2, and FIG. Also in the thickness direction, the thickness can be made approximately 1.0 mm or less, and a thin shape can be achieved at the same time.
In the example shown in FIGS. 1, 2, and 3, the external terminal portions are arranged in two rows along the terminal portion (pad portion) of the semiconductor element, but the positions of the terminals of the semiconductor element are along the four sides. The two-dimensional arrangement and the two-dimensional arrangement of the terminal portions on the outer side of the semiconductor element along the four sides of the semiconductor element can sufficiently cope with the further increase in the number of pins of the semiconductor element.

Next, the circuit member of this invention is demonstrated based on figures.
The circuit member of the present invention is used for manufacturing the above-described semiconductor device of the present invention, and is subjected to external processing by etching. As shown in FIGS. 4 (a) and 4 (b), the semiconductor element A plurality of terminal portions that are integrally provided so as to face the front and back of the internal terminal portion for electrical connection with the terminal and the external terminal portion for connection to an external circuit are arranged in a substantially plane. These are arranged independently from each other, and each terminal portion or die pad is integrally connected to the outside of each terminal portion via a connection lead to provide an outer frame portion for holding the whole.
The circuit member 300 of FIG. 4A is used for manufacturing the semiconductor device of the first example shown in FIG. 1A and the second example shown in FIG. (A) shows a plan view thereof. 4B is used for manufacturing the semiconductor device of the third example shown in FIG. 3A and the fourth example shown in FIG. 3C. b) (A) shows a plan view thereof.
4 (a) (b) and FIG. 4 (b) (b) are schematic views of C1-C2 and C3-C4 in FIG. 4 (a) (b) and FIG. 4 (b) (b), respectively. Although it is a cross-section, in practice, the shapes are as shown in FIGS. 4A and 4C and FIGS. 4B and 4C, respectively, due to etching characteristics.
Note that the planar shape of the circuit member used in the semiconductor device shown in FIG. 2 is basically the same as the shape shown in FIGS. 4A and 4A, but FIG. ) Of the die pad portion at a position corresponding to C1-C2 is different.
4, 300 and 305 are circuit members, 320 is a die pad, 325 is a lead, 330 is a terminal portion, 332 is an internal terminal portion, 334 is an external terminal portion, 350 is an outer frame portion, and 352 is a connection lead.
Note that a dotted line region in FIG. 4 indicates a region used for manufacturing a semiconductor device of a circuit member.
As the material of the circuit member 300 (305), 42 alloy (Ni 42% Fe alloy), copper alloy, or the like is used, and the outer shape can be processed by etching in the same manner as a normal lead frame.

Next, an example of a method for manufacturing a circuit member of the present invention shown in FIG. 4 and an example of a method for manufacturing a circuit member used in the semiconductor device shown in FIG. 2 will be described based on the drawings.
First, circuit members used in the semiconductor device of the first example and the second example shown in FIGS. 1A and 1C, and the third example shown in FIG. 3A, FIG. A method of manufacturing a circuit member used in the semiconductor device of the fourth example shown in FIG.
FIG. 5 shows only the periphery of the terminal portion for easy understanding.
First, a plate material 410 having a thickness of about 0.2 mm, which is a material of a circuit member, made of 42 alloy (Ni 42% Fe alloy) or the like is prepared, and both surfaces of the plate material 410 are degreased and washed well (FIG. 5). (A) After that, a photosensitive resist 420 is applied to both sides of the plate 410 and dried. (Fig. 5 (b))
Next, after exposing only a predetermined portion of the resist from both surfaces of the plate material 410 using a predetermined pattern plate, development processing is performed to form a resist pattern. (Fig. 5 (c))
In the case of manufacturing the circuit member 300 shown in FIG. 4A, resist patterns 421 and 422 are formed as shown in FIGS. 5C and 5A, and the circuit member 305 shown in FIG. In this case, resist patterns 423 and 424 are formed as shown in FIGS.
The resist is not particularly limited, but a casein resist using potassium dichromate as a photosensitive material, a negative liquid resist (PMER resist) manufactured by Tokyo Ohka Co., Ltd., or the like can be used.
Next, the resist pattern is used as an anticorrosion film, and etching is performed with a corrosive solution to produce a circuit member. (FIG. 5 (d), FIG. 5 (e))
In the case of manufacturing the circuit member 300 shown in FIG. 4A, the etching proceeds as shown in FIGS. 5D and 5A, and the etching is completed as shown in FIGS. 5E and 5A.
In the case of manufacturing the circuit member 305 shown in FIG. 4B, the etching proceeds as shown in FIGS. 5D and 5B, and the etching is completed as shown in FIGS. 5E and 5B. To do.
In the case of manufacturing the circuit member shown in FIGS. 4A and 4B, the thickness of the thin portion 430 can be adjusted by adjusting the etching amount on the front and back of the plate material 410.
Etching is usually performed by spray etching from both sides of the plate material using a ferric chloride aqueous solution as a corrosive solution.
Thereafter, the resist is peeled off to obtain the circuit member of the present invention. (Fig. 5 (f))
The method shown in FIG. 5 is an example of the method for manufacturing the circuit member shown in FIG. 4 and is not limited thereto.

Next, circuit members used in the semiconductor device shown in FIGS. 2A and 2C, which are cited as modifications of the semiconductor device 100 of the first example shown in FIG. A method for manufacturing a circuit member used in the semiconductor device shown in 2 (b) and FIG. 2 (d) will be described with reference to FIG.
FIG. 6 also shows only the periphery of the terminal portion for easy understanding.
Similar to the manufacturing method shown in FIG. 5, a plate member 410 made of 42 alloy (Ni 42% Fe alloy) and the like having a thickness of about 0.2 mm, which is a material of a circuit member, is prepared, and both surfaces of the plate member 410 are degreased. After thoroughly washing (FIG. 6A), a photosensitive resist 420 is applied on both sides of the plate material 410 and dried. (Fig. 6 (b))
Next, after exposing only a predetermined portion of the resist from both surfaces of the plate material 410 using a predetermined pattern plate, development processing is performed to form a resist pattern. (Fig. 6 (c))
In the case of manufacturing a circuit member used in the semiconductor device shown in FIGS. 2A and 2C, resist patterns 421A and 422A are formed as shown in FIGS. b) In the case of manufacturing a circuit member used in the semiconductor device shown in FIG. 2D, resist patterns 423A and 424A are formed as shown in FIGS.
Next, the resist pattern is used as an anticorrosion film, and etching is performed with a corrosive solution to produce a circuit member. (Fig. 6 (d), Fig. 6 (e))
In the case of manufacturing a circuit member used in the semiconductor device shown in FIGS. 2A and 2C, the etching proceeds as shown in FIGS. 6D and 6A, and FIG. And the etching is completed.
In the case of manufacturing a circuit member used in the semiconductor device shown in FIGS. 2B and 2D, etching proceeds as shown in FIGS. 6D and 6B, and FIG. Etching is completed as shown in (b).
Thereafter, the resist is peeled off to obtain the circuit member of the present invention. (Fig. 6 (f))

  The circuit member manufacturing method described above is a method for manufacturing one circuit member necessary for manufacturing one semiconductor device. Normally, from the viewpoint of productivity, when etching a circuit member, FIG. A plurality of circuit members shown in (1) are fabricated in a state of being imposed, and the above-described process is performed. In this case, a frame portion (not shown) connected to a part of the outer frame portion 350 shown in FIG.

Next, a method for manufacturing a semiconductor device of the present invention will be briefly described with reference to FIG.
The case where the circuit member 300 shown to Fig.4 (a) is used is demonstrated.
First, a circuit member 300 shown in FIG. 4 (a) prepared by external processing as shown in FIG. 5 is prepared. (Fig. 7 (a))
Next, after performing a cleaning process or the like, a silver plating process is performed on the surface portion of the internal terminal portion 332 to provide a silver plating portion 510. (Fig. 7 (b))
In place of silver plating, gold plating or palladium plating may be used.
Next, the semiconductor element 520 is mounted on the die pad 320 by a die attach material 525 on a surface that is not on the terminal surface side, and the terminal 522 of the semiconductor element 520 and the silver plating portion 510 of the internal terminal portion 332 are electrically connected by the wire 540. Connect. (Fig. 7 (c))
Thereafter, a part of the external terminal portion 334 of the terminal portion 330 is exposed to the outside, and the whole is resin-sealed with a sealing resin. (Fig. 7 (d))
Further, if necessary, an external electrode 560 made of solder is formed on one surface 334A of the exposed external terminal portion 334 of the terminal portion 330. (Fig. 7 (e))
Next, each connection lead 352 of the circuit member 300 is cut by pressing, and the outer frame portion 350 is removed. (Fig. 7 (f1), Fig. 7 (f2))
The external electrode 560 made of solder may be manufactured by applying solder paste by screen printing, reflowing, or the like as long as the amount of solder necessary for connection between the circuit board and the semiconductor device can be obtained.
The semiconductor device manufacturing method of the present invention has been described above, but the circuit member is not limited to that shown in FIG.

Furthermore, the Example of the circuit member of this invention is given and demonstrated based on FIG.
In the circuit member 300 shown in FIG. 4A, a circuit member made of 42 alloy (Ni 42% Fe alloy) and having a terminal portion thickness of 0.2 mm is manufactured by the etching method shown in FIG. After being obtained, the semiconductor device shown in FIG. 1 was manufactured by the method for manufacturing the semiconductor device shown in FIG. 7, but there was no particular problem in terms of quality.
Similarly, the circuit member 305 shown in FIG. 4B is made of a copper alloy, and the circuit member having a terminal portion thickness of 0.2 mm and a lead portion thickness of 0.05 mm is formed by the etching method shown in FIG. Then, the semiconductor device shown in FIG. 3 was manufactured by the method for manufacturing the semiconductor device shown in FIG. 7, but there was no particular problem.

  This is useful for manufacturing a resin-encapsulated semiconductor device (plastic package) on which a semiconductor element is mounted.

The figure which showed the 1st example of the resin-encapsulated semiconductor device of this invention, and the 2nd example The figure which showed the modification of the 1st example of the resin-encapsulated semiconductor device of this invention, and a 2nd example The figure which showed the 3rd example of the resin-encapsulated semiconductor device of this invention, and the 4th example The figure which showed the circuit member of this invention Manufacturing process diagram of circuit member of the present invention Manufacturing process diagram of circuit member of the present invention Manufacturing process diagram of resin-encapsulated semiconductor device of the present invention

Explanation of symbols

100, 100A Resin-encapsulated semiconductor device 110 Semiconductor element 111 Terminal (pad)
115 Die attach material 120 Die pad 130 Terminal part 132 Internal terminal part 134 External terminal part 134A Exposed surface 140 Wire 150 Sealing resin 160 Silver plating 170 External electrode 200, 200A Resin-encapsulated semiconductor device 210 Semiconductor element 211 Terminal (pad)
215 Die attach material 225 Lead 230 Terminal portion 232 Internal terminal portion 234 External terminal portion 234A Exposed surface 240 Wire 250 Sealing resin 260 Silver plating 270 Solder external electrode 300, 305 Circuit member 320 Die pad 325 Lead 330 Terminal portion 332 Inside Terminal portion 334 External terminal portion 350 Outer frame portion 352 Connection lead 410 Plate material 420 Resist 421, 422, 423, 424 Resist pattern 421A, 422A, 423A, 424A Resist pattern 430 Thin portion 500, 500A Semiconductor device 510 Silver plating 520 Semiconductor element 522 Terminal (pad)
525 Die attach 540 Wire 550 Resin 560 for sealing External electrode made of solder

Claims (4)

A plurality of terminal portions each having an internal terminal on the front surface side and an external terminal on the back surface side are integrated in a substantially flat surface, and each of the terminal portions is electrically independent from each other. In a resin-encapsulated semiconductor device in which the whole is resin-sealed so as to expose a part of the external terminals of each terminal portion to the outside,
A lead is integrally connected to each terminal portion so as to be along a plane on which the plurality of terminal portions are arranged, and each lead is electrically arranged independently of each other, and the semiconductor element includes a plurality of the semiconductor elements. A resin-encapsulated semiconductor device, wherein the resin-encapsulated semiconductor device is mounted on a lead while being electrically insulated.   The resin-encapsulated semiconductor device according to claim 1, further comprising an external electrode made of solder on an external terminal surface exposed to the outside.   The terminals of the semiconductor element are arranged along substantially the center line of the pair of sides of the terminal surface of the semiconductor element, and the terminal part is along the pair of sides facing each other so as to sandwich the center line. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is provided respectively. A plurality of terminal portions having an internal terminal on the front surface side and an external terminal on the back surface are integrally arranged in a substantially flat surface, and the internal terminal of the terminal portion and the terminal of the semiconductor element are wired. In the manufacturing method of the resin-encapsulated semiconductor device in which the whole is resin-sealed so as to expose a part of the external terminals of each terminal portion to the outside,
(A) The conductive substrate is etched, and a plurality of terminal portions having internal terminals on the front surface side and external terminals on the back surface are integrated with each other, and the respective terminal portions are integrated with each other through connection leads. A circuit member creating step for creating a circuit member comprising: an outer frame member connected to each other; and a lead for mounting a semiconductor element integrally connected to each terminal portion;
(B) a semiconductor element mounting process for mounting by electrically insulating and fixing the semiconductor element to the lead for mounting the semiconductor element;
(C) a wire bonding step of electrically connecting a terminal of the semiconductor element and an internal terminal of the circuit member with a wire;
(D) a resin sealing step for resin-sealing the whole so that a part of each external terminal is exposed to the outside;
(E) A method of manufacturing a resin-encapsulated semiconductor device, comprising: an outer frame member separation and removal step of cutting each connection lead of the circuit member and removing the outer frame member.

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