JP2005252040A - Photoelectric conversion device, interposer and optical information processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which has a simple structure and can drive a photoelectric conversion element stably, an interposer and an optical information processing device. <P>SOLUTION: The photoelectric conversion device 1 is formed by mounting the photoelectric conversion element 2, a semiconductor integrated circuit 3 connected to the photoelectric conversion element 2, and a bias circuit (a set of a capacitor 5 and a coil 6) of the semiconductor integrated circuit 3 on the interposer 4. In the device, the bias circuit is installed in the interposer 4. The photoelectric conversion device 1 is constituted by mounting the photoelectric conversion element 2, the semiconductor integrated circuit 3 connected to the photoelectric conversion element 2, and the bias circuit (a set of the capacitor 5 and the coil 6) of the semiconductor integrated circuit 3. The bias circuit is installed in the interposer 4. The optical information processing device 21 has the photoelectric conversion device 1, and an optical waveguide 22 opposing the photoelectric conversion element 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a photoelectric conversion device, an interposer, and an optical information processing device.

  Currently, signal propagation between semiconductor chips such as LSI (Large Scale Integrated Circuit) is all done by electrical signals via substrate wiring. However, with the recent increase in MPU functionality, the amount of data exchanged between chips has increased remarkably, and as a result, various high frequency problems have emerged. Typical examples thereof include RC signal delay, impedance mismatch, EMC / EMI, crosstalk, and the like.

  In order to solve the above problems, the mounting industry and others have so far taken the lead in solving various problems such as optimization of wiring layout and development of new materials.

  However, in recent years, the effects of optimization of the wiring layout and development of new materials have been hampered by physical limitations, and it is assumed that simple semiconductor chips will be mounted in order to realize further advanced system functionality in the future. It has become necessary to review the structure of the printed wiring board itself. In recent years, various drastic measures have been proposed to solve these problems, but the following are representative examples.

-Fine wiring bonding by multi-chip module (MCM) High-performance chip is mounted on a precision mounting substrate such as ceramic and silicon, and fine wiring bonding that cannot be formed on a motherboard (multilayer printed circuit board) is realized. As a result, the pitch of the wiring can be narrowed, and the amount of data exchange increases dramatically by widening the bus width.

-Sealing and integration of various semiconductor chips and electrical wiring bonding by integration Various semiconductor chips are two-dimensionally sealed and integrated using polyimide resin or the like, and fine wiring bonding is performed on the integrated substrate. As a result, the pitch of the wiring can be narrowed, and the amount of data exchange increases dramatically by widening the bus width.

-Three-dimensional bonding of semiconductor chips A through electrode is provided in various semiconductor chips, and each is bonded to form a laminated structure. Thereby, the connection between the different types of semiconductor chips is physically short-circuited, and as a result, problems such as signal delay are avoided. On the other hand, however, problems such as an increase in the amount of heat generated due to lamination and thermal stress between semiconductor chips occur.

  Furthermore, in order to realize high speed and large capacity of signal transmission / reception as described above, an optical transmission coupling technique using optical wiring has been developed (for example, see Non-Patent Document 1 and Non-Patent Document 2 described later). . The optical wiring can be applied to various places such as between electronic devices, between boards in an electronic device, or between chips in a board. For example, as shown in FIG. 14, for transmission of signals over a short distance such as between chips, an optical waveguide 51 is formed on a printed wiring board 50 on which the chips are mounted, and a light emitting element (for example, a surface emitting laser) is formed. The light (for example, laser light) modulated by 52 is incident on the optical waveguide 51, the incident light is guided through the optical waveguide 51, and the light emitted from the optical waveguide 51 is a light receiving element (for example, a photodiode) 53. Is received by. In this way, it is possible to construct an optical transmission / communication system using the optical waveguide 51 as a transmission path for signal-modulated laser light or the like.

  On the other hand, in order to cause the light emitting element 52 such as a surface emitting laser to emit light stably in a band of several hundreds of MHz or more, as shown in FIG. It is necessary to put on. That is, the output signal of the LSI is amplified by a drive circuit (LDD (laser diode driver)) to drive the light emitting element 52. For example, when the output of the LSI is 2.2 V and 0 mAｍ0.5 mA pulse, it is first amplified to 0 mA⇔3 mA pulse by an amplifier, and further amplified to 2 mA⇔5 mA pulse by adding a bias.

  Therefore, for example, as shown in FIG. 16, an LSI 55 and a light emitting element driving circuit 56 connected to the LSI 55 are mounted on one surface side of a mounting substrate (for example, an interposer) 54, and the mounting substrate is mounted on the other surface side. By mounting the light emitting element 52 connected to the driving circuit 56 via 54, the output signal of the LSI 55 can be amplified by the driving circuit 56 and the light emitting element 52 can be driven.

  However, in the case of the mounting form described above, if the number of elements increases due to the increase in the number of channels, the wiring between the LSI 55 and the drive circuit 56 must be multilayered due to insufficient space in the mounting substrate 54. As a result, the lengths of the respective signal lines are slightly different from each other, signal skew (disturbance of the signal due to variations in signal arrival time) occurs, and high-frequency modulation becomes difficult.

  In order to solve such a problem due to the difference in the length of the signal line, as shown in FIG. 17, an LSI 55 is stacked on the light emitting element driving circuit 56, and all the channels are formed by through vias (not shown). A method such as long connection has been proposed (for example, see Non-Patent Document 3 below).

Nikkei Electronics, “Encounter with Optical Wiring”, December 3, 2001, pages 122, 123, 124, 125, FIG. 4, FIG. 5, FIG. 6, FIG. NTT R & D, vol.48, no.3, pp.271-280 (1999) TECHNICAL REPORT OF IEICE. EMD2001-90 (2002-1) "Development Status of Opto-Electronic Composite Packaging Technology-Focusing on Active Interposer-" Technology Research Association, Advanced Electronic Technology Development Organization (ASET)

  However, when the LSI 55 is stacked on the light emitting element driving circuit 56 as in the above-described conventional example, problems such as formation of through vias are difficult at present and heat radiation of the driving circuit 56 is difficult. Not realistic.

  Therefore, at present, the structure in which the light emitting element driving circuit 56 is provided in the LSI 55 is considered to be the most effective measure because the power consumption can be greatly suppressed. However, a new design of LSI requires a great deal of cost and design time.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a photoelectric conversion device and an interposer having a simple structure and capable of stably driving a photoelectric conversion element. And providing an optical information processing apparatus.

  That is, the present invention provides a photoelectric conversion device in which a photoelectric conversion element, a semiconductor integrated circuit section connected to the photoelectric conversion element, and a bias circuit section of the semiconductor integrated circuit section are mounted on an interposer. The present invention relates to a photoelectric conversion device characterized in that a part is provided in the interposer.

  Further, a photoelectric conversion element, a semiconductor integrated circuit portion connected to the photoelectric conversion element, and a bias circuit portion of the semiconductor integrated circuit portion are mounted to constitute a photoelectric conversion device, and the bias circuit portion is provided internally. Related to the interposer.

  Furthermore, the present invention relates to an optical information processing apparatus having the photoelectric conversion apparatus of the present invention and an optical waveguide facing the photoelectric conversion element.

  According to the present invention, in the photoelectric conversion device in which the photoelectric conversion element, the semiconductor integrated circuit unit connected to the photoelectric conversion element, and the bias circuit unit of the semiconductor integrated circuit unit are mounted on the interposer. Since the bias circuit section is provided in the interposer, the signal line lengths of the semiconductor integrated circuit section and the photoelectric conversion element are not different from each other as in the conventional example described above. It is not necessary to form a through via in the semiconductor integrated circuit portion for connecting the semiconductor integrated circuit portion and the bias circuit portion. In addition, there is no new design of the semiconductor integrated circuit portion that requires a great deal of cost and time.

  Therefore, the present invention has a simple structure, enables high-frequency modulation with less noise, and can stably drive the photoelectric conversion element.

  In the present invention, it is desirable that the bias circuit section is composed of a capacitor and a coil provided in the interposer. Further, it is preferable that the capacitor is formed of a dielectric substrate material of the interposer, and the coil is formed of a wiring material in the interposer.

  In the photoelectric conversion device of the present invention, the semiconductor integrated circuit unit is mounted on one surface side of the interposer, the photoelectric conversion element is mounted on the other surface side, and the semiconductor integrated circuit is interposed via the capacitor in the interposer. It is preferable that the circuit unit and the photoelectric conversion element are connected, the coil is connected to the connection midpoint, and a bias power supply terminal to the coil is taken out via the interposer.

  The capacitor prevents a reverse flow of bias current to the semiconductor integrated circuit portion (capacity estimation is, for example, 1 mC or less), and the coil prevents a reverse flow of pulses to the bias power supply (capacity estimation, for example, is 1 mH or less).

  Specifically, a plurality of connection lands respectively connected to a plurality of pad electrodes of the semiconductor integrated circuit portion are formed on the interposer, and a plurality of sets of the capacitor and the coil are formed on the plurality of connection lands. It is preferable that they are respectively provided in the interposer and connected to the electrodes of the photoelectric conversion element via the interposer.

  Further, it is preferable that the photoelectric conversion element (light emitting element, for example, a surface emitting laser) is driven by the output of the semiconductor integrated circuit unit. Alternatively, it is preferable that the output of the photoelectric conversion element (light receiving element such as a photodiode) is input to the semiconductor integrated circuit unit.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

First Embodiment FIG. 1 is a schematic sectional view of a photoelectric conversion device according to the present invention. As shown in FIG. 1, a photoelectric conversion device 1 according to the present invention includes a photoelectric conversion element 2, a semiconductor integrated circuit unit 3 connected to the photoelectric conversion element 2, and the bias circuit unit of the semiconductor integrated circuit unit 3. Are mounted on the interposer 4. Here, the bias circuit section includes a capacitor 5 and a coil 6 provided in the interposer 4.

  Specifically, a plurality of connection lands 7a formed on one surface side of the interposer 4 and a plurality of pad electrodes 8 of the semiconductor integrated circuit unit 3 are connected via solder bumps 9a, and the other side of the interposer 4 is connected. The connection lands 7b formed on the surface side and the electrodes 10 of the photoelectric conversion element 2 are connected via solder bumps 9b. Then, the semiconductor integrated circuit section 3 and the photoelectric conversion element 2 are connected via the capacitor 5 in the interposer 4, and the coil 6 is connected to the midpoint of connection, and further bias power is supplied to the coil 6 via the interposer 4. The terminal 11 is taken out.

  The capacitor 5 prevents a reverse flow of bias current to the semiconductor integrated circuit unit 3 (capacity estimation is, for example, 1 mC or less), and the coil 6 prevents a reverse flow of pulses to the bias power supply terminal 11 (capacity estimation is, for example, 1 mH). Less than).

  The photoelectric conversion element 2 includes an electrode 10 connected to the semiconductor integrated circuit unit 3 via an interposer 4 and a photoelectric conversion unit 13 on a substrate 12 made of GaAs or the like. Are electrically connected by through vias 14 formed in the substrate 12 and lead-out wiring (anode) 15. In addition, as the photoelectric conversion part 13, a light emitting element (for example, surface emitting laser) or a light receiving element (for example, photodiode) is mentioned.

  A ground (GND) electrode 16 is formed on the interposer 4 and is connected between wirings connecting the semiconductor integrated circuit portion 3 and the photoelectric conversion element 2.

  FIG. 2 is a schematic plan view of each substrate when the interposer according to the present invention as shown in FIG. 1 is composed of six substrates. 3 is an equivalent circuit diagram of the interposer 4 shown in FIG. 2, and FIG. 4 is a schematic cross-sectional view taken along the line A-A 'of the interposer 4 shown in FIG.

  As shown in FIGS. 2 to 4, a plurality of connection lands 7 a respectively connected to a plurality of pad electrodes 8 of the semiconductor integrated circuit portion 3 and a bias power supply terminal on the uppermost substrate 17 a constituting the interposer 4. 11 are formed. A plurality of sets of capacitors 5 and coils 6 are provided in the interposer 4 in correspondence with the plurality of connection lands 7a. Specifically, a plurality of sets of capacitors 5 and coils 6 are formed corresponding to the plurality of connection lands 7a for each of the substrates 17b to 17f constituting the interposer 4. Further, the connection land 7 a for the semiconductor integrated circuit portion 3 and the connection land 7 b for each electrode 10 of the photoelectric conversion element 2 are connected by the through via 18 formed in the interposer 4.

  In the integrated design of the photoelectric conversion element 2, for example, the area per element can be □ 200 μm × 300 μm. The set of the capacitor 5 and the coil 6 as the bias circuit section requires an area several times larger than the area per element described above. As shown in the figure, the bias circuit section includes a plurality of connection lands. Since it is installed in the interposer 4 corresponding to each 7a, a simple structure can be achieved.

  In recent years, light-emitting elements (for example, surface-emitting lasers) as the photoelectric conversion unit 13 have been reduced in power consumption, and light emission is performed at about 2 V and 1 mA. Actual high-frequency pulse transmission is also possible by injecting a current of about 3 mA. It has become. This can be dealt with by optimizing the shape of the I / O (external output) transistor of the semiconductor integrated circuit section 3. For example, when the gate width is 1 μm, the current output is 0.5 μA. Therefore, if the gate width is 6 μm, a current output of 3 mA is possible, and it is possible to cope with only a simple design change of the semiconductor integrated circuit section 3. It is.

  The diameter of the through via 18 formed in each of the substrates 17a to 17f of the interposer 4 can be set to φ100 μm, for example. Further, each through via 18 is insulated in a donut shape so as not to interfere with other channels.

  The coil 6 can be formed by the wiring material 19 in the interposer 4, and an insulating film 20 may be formed between the portions where the wiring material 19 overlaps vertically as shown in the figure. The capacitor 5 can be formed of a dielectric substrate material for the interposer 4. Since the bias line is direct current (DC), the design is free.

  Moreover, the thickness of each board | substrate 17a-17f can be about 200 micrometers, for example, the interposer 4 based on this invention can be easily produced by sintering these board | substrates 17a-17f, and circuit integration Can be achieved.

  As described above, the photoelectric conversion element 2 (light emitting element, for example, a surface emitting laser) can be driven by the output of the semiconductor integrated circuit unit 3, or the photoelectric conversion element 2 (light receiving element, for example, photo) The output of the diode) can be input to the semiconductor integrated circuit unit 3.

  According to the present embodiment, the photoelectric conversion element 2, the semiconductor integrated circuit unit 3 connected to the photoelectric conversion element 2, and the bias circuit unit (a set of the capacitor 5 and the coil 6) of the semiconductor integrated circuit unit 3. ) Are mounted on the interposer 4, the bias circuit section is provided in the interposer 4, so that the signal line lengths of the semiconductor integrated circuit section 3 and the photoelectric conversion element 2 are different. There is no skew, and there is no need to form a through via in the semiconductor integrated circuit unit 3 for connection between the semiconductor integrated circuit unit 3 and the bias circuit unit. Further, there is no new design of the semiconductor integrated circuit unit 3 that requires a great deal of cost and time.

  Therefore, the photoelectric conversion apparatus 1 according to the present invention has a simple structure, enables high-frequency modulation with less noise, and can stably drive the photoelectric conversion element 2.

  Further, the signal line between the semiconductor integrated circuit portion 3 and the photoelectric conversion element 2 can be made short and equal in length. Therefore, countermeasures against noise and crosstalk in the electric signal are facilitated, and the light modulation speed can be improved.

Second Embodiment FIG. 5 is a schematic sectional view of an optical information processing apparatus according to the present invention. As shown in FIG. 5, an optical information processing device 21 according to the present invention includes a photoelectric conversion device 1 according to the present invention and an optical waveguide 22 facing the photoelectric conversion device 1. The optical waveguide 22 is not particularly limited, and a conventionally known optical waveguide can be used. For example, the optical waveguide 22 includes clads 23a and 23b and a core layer 24 sandwiched between the clads 23a and 23b, and a light incident portion. In addition, each of the light emitting portions has a lens member 25. Further, the light incident portion and the light emitting portion of the core layer 24 of the optical waveguide 22 are formed on a 45 ° mirror surface.

  In the photoelectric conversion device 1 according to the present invention, as shown in the drawing, lenses 26 may be arranged at positions corresponding to the light emitting element 13a and the light receiving element 13b as the photoelectric conversion unit.

  According to the mechanism of the optical information processing apparatus 21 according to the present invention, light (for example, laser light) 27 that has been signal-modulated by the light emitting element 13a serving as the photoelectric conversion unit is collimated by a lens 26. The signal light 27 is further condensed by the lens member 25 formed at the light incident portion of the optical waveguide 22 and is effectively incident on the core layer 24 of the optical waveguide 22. The incident light 27 is guided through the optical waveguide 22, collimated by the lens member 25 formed in the light emitting portion of the optical waveguide 22, and emitted from the optical waveguide 22. The emitted light 27 is collected by the lens 26 and is effectively received by the light receiving element 13b as the photoelectric conversion unit. In this way, it is possible to construct an optical transmission / communication system using the optical waveguide 22 as a transmission path for signal-modulated laser light or the like.

Further, it is preferable to synchronize the write / read control potential (signal) of the semiconductor integrated circuit section 3 and the ground (GND) potential connected to the photoelectric conversion element 2 as shown below, for example.
During output: Read state → GND potential = low → light emitting element can emit light.
During input: Write state → GND potential = high → light emission of light emitting element is impossible.
Thereby, the input / output howling of the optical wiring system can be effectively solved while maintaining a simple structure.

  According to the present embodiment, the photoelectric conversion element 2, the semiconductor integrated circuit unit 3 connected to the photoelectric conversion element 2, and the bias circuit unit (a set of the capacitor 5 and the coil 6) of the semiconductor integrated circuit unit 3. ) Are mounted on the interposer 4, the bias circuit section is provided in the interposer 4, so that the semiconductor integrated circuit section 3, the photoelectric conversion element 2, Therefore, there is no need to form a through via in the semiconductor integrated circuit portion 3 for connection between the semiconductor integrated circuit portion 3 and the bias circuit portion. Further, there is no new design of the semiconductor integrated circuit unit 3 that requires a great deal of cost and time.

  Therefore, the photoelectric conversion apparatus 1 according to the present invention has a simple structure, enables high-frequency modulation with less noise, and can stably drive the photoelectric conversion element 2.

  Further, the signal line between the semiconductor integrated circuit portion 3 and the photoelectric conversion element 2 can be made short and equal in length. Therefore, countermeasures against noise and crosstalk in the electric signal are facilitated, and the light modulation speed can be improved.

Third Embodiment As described above, an optical information processing apparatus according to the present invention has a photoelectric conversion apparatus according to the present invention and an optical waveguide facing the photoelectric conversion apparatus, and the structure thereof is the same as that of the present invention. Although it can select suitably unless it deviates from the content, For example, it can use suitably for the structure which has a socket and the optical waveguide installed in the said socket.

  FIG. 6 is a schematic perspective view of the socket. 6A is a schematic perspective view of the socket as viewed from the surface side where the optical waveguide is installed, and FIG. 6B is a schematic perspective view as viewed from the opposite surface side of FIG. 6A. FIG.

  As shown in FIG. 6, the socket 28 is provided with positioning means having a concavo-convex structure for positioning and fixing the optical waveguide. Specifically, the concavo-convex structure has a recess 29 for fitting the optical waveguide and positioning the width direction thereof, and a protrusion 30 for positioning the length direction of the optical waveguide. . Further, the depth of the recess 29 is larger than the thickness of the optical waveguide.

  Further, on the convex surface 31 of the concavo-convex structure of the socket 28, a conduction means, for example, a terminal pin 32, for conducting the front and back surfaces of the socket 28 is provided. And the photoelectric conversion apparatus 1 based on this invention is fixed on the convex surface 31 of this uneven structure so that it may mention later.

  As the material of the socket 28, a conventionally known material can be used as long as it is an insulating resin. Examples thereof include glass-filled PES (polyethylene sulfide) resin and glass-filled PET (polyethylene terephthalate) resin. As for the material of such a socket 28, there are already many kinds of data such as the type, insulation, and reliability, and there are a wide variety of manufacturers. Therefore, it is a structure that is easy to accept in all of its functions, costs, reliability, etc., and can be easily integrated with the existing printed wiring board mounting process.

  Although the manufacturing method of the socket 28 is not specifically limited, For example, it can manufacture easily by shaping | molding using the metal mold | die which has the said uneven structure.

  FIG. 7 is a schematic cross-sectional view of an optical information processing apparatus 21 based on the present invention using the socket 28 described above.

  As shown in FIG. 7, the optical information processing apparatus 21 according to the present invention using the socket 28 includes a pair of sockets 28 and an optical waveguide 22 installed in the socket 28, and the gap between the pair of sockets 28. An optical waveguide 22 is stretched over. Although not shown, the optical waveguide 22 includes a plurality of core layers arranged in parallel therein. At this time, since the optical waveguide 22 is not in contact with a printed wiring board described later, it is possible to effectively prevent the optical waveguide 22 from being broken by heat generated during use.

  Further, the photoelectric conversion device 1 according to the present invention is fixed on the convex surface 31 of the concave-convex structure of the socket 28. In the photoelectric conversion device 1 according to the present invention, the photoelectric conversion element 2 is mounted on one surface side of the interposer 4, the semiconductor integrated circuit portions 3 a and 3 b are mounted on the other surface side, and the capacitor 5 and the coil 6 The bias circuit section composed of a set is provided in the interposer 4.

  As shown in FIG. 7, an interposer 4 according to the present invention has semiconductor integrated circuit portions 3a and 3b mounted on one surface side, a photoelectric conversion element 2 mounted on the other surface side, and a capacitor. The bias circuit unit composed of a set of 5 and the coil 6 is provided internally. Here, in the photoelectric conversion device 1 according to the present invention, the photoelectric conversion unit includes a light emitting element (for example, a surface emitting laser) 13 a that makes light incident on the optical waveguide 22, and a light receiving device that receives light emitted from the optical waveguide 22. An element (for example, a photodiode) 13b is used. Although not shown, a rewiring electrode is provided on the periphery of the interposer 4.

  When fixing the pair of sockets 28 in which the optical waveguides 22 are installed in the recesses 29 and the photoelectric conversion device 1 according to the present invention, the surface side of the interposer 4 on which the photoelectric conversion element 2 is mounted is connected to the socket 28. The terminal pin 32 of the socket 28 and the rewiring electrode (not shown) of the interposer 4 are fixed so as to be electrically connected to the convex surface 31.

  Further, by forming the depth of the recess 29 of the socket 28 to be larger than the thickness (for example, 1 mm) of the optical waveguide 22 (for example, the depth is 2 mm), as shown in FIG. A space 34 can be formed between one surface 33 side of 22 and the interposer 4 according to the present invention.

  As described above, the semiconductor integrated circuit portions 3a and 3b are mounted on the socket 28 via the interposer 4, and the space 34 is provided between the one surface 33 side of the optical waveguide 22 and the interposer 4 according to the present invention. Thus, even if the semiconductor integrated circuit portions 3a and 3b generate heat when the optical information processing apparatus 21 is used, the optical waveguide 22 can be effectively prevented from being broken by this heat.

  The mechanism of this operation is that an electric signal transmitted from one semiconductor integrated circuit portion 3a is converted into an optical signal and emitted from the light emitting element 13a as an optical signal by laser light. The emitted optical signal is incident on the light incident portion of one corresponding core layer 24 of the optical waveguide 22, guided in the waveguide direction in which the optical waveguide 22 extends, and from the light emitting portion of the other core layer 24. Exit. The optical signal emitted from the optical waveguide 22 is received by the corresponding light receiving element 13b, converted into an electrical signal, and transmitted to the other semiconductor integrated circuit portion 3b as an electrical signal. The optical signal is collimated or condensed by the lens 26 and the lens member 25 of the optical waveguide 22 arranged corresponding to the photoelectric conversion unit 13a or 13b, respectively, and is emitted or incident effectively.

  The optical information processing apparatus 21 of the present embodiment can constitute an optical wiring system in which the optical waveguide 22 is used as an optical wiring. That is, the optical information processing apparatus 21 is fixed in a state of being electrically connected to the printed wiring board.

  According to the present embodiment, the photoelectric conversion element 2, the semiconductor integrated circuit sections 3a and 3b connected to the photoelectric conversion element 2, and the bias circuit section (capacitor 5 and coil of the semiconductor integrated circuit sections 3a and 3b). 6) is mounted on the interposer 4, the bias circuit section is provided in the interposer 4, so that the semiconductor integrated circuit sections 3a, 3b are provided as in the conventional example described above. Since the signal line lengths of the photoelectric conversion element 2 and the photoelectric conversion element 2 are different from each other, signal skew does not occur, and the semiconductor integrated circuit portions 3a and 3b have through vias for connection between the semiconductor integrated circuit portions 3a and 3b and the bias circuit portion. There is no need to form. In addition, there is no new design of the semiconductor integrated circuit portions 3a and 3b which requires a great deal of cost and time.

  Therefore, the photoelectric conversion apparatus 1 according to the present invention has a simple structure, enables high-frequency modulation with less noise, and can stably drive the photoelectric conversion element 2.

  Further, the signal lines between the semiconductor integrated circuit portions 3a and 3b and the photoelectric conversion element 2 can be made short and equal in length. Therefore, countermeasures against noise and crosstalk in the electric signal are facilitated, and the light modulation speed can be improved.

  Further, since the optical waveguide 22 can be electrically connected to the printed wiring board in a state where it is installed in the recess 29 of the socket 28, the existing mounting structure of the printed wiring board can be used as it is. Therefore, if a region where the socket 28 can be installed is provided on the printed wiring board, other general electric wiring can be formed by a conventional process.

  Even if the optical waveguide 22 is vulnerable to a high temperature process, for example, after fixing the socket 28 to the printed wiring board, and after completing all mounting processes including a high temperature process such as solder reflow and underfill resin sealing. Since the optical waveguide 22 can be installed in the recess 29 of the socket 28, the optical waveguide 22 can be mounted without suffering damage due to high temperature.

  Further, since the socket 28 can be made of a resin having higher rigidity than the printed wiring board, and the light coupling between the light emitting element 13a or the light receiving element 13b and the optical waveguide 22 can be performed on the socket 28, Mounting accuracy required for optical coupling can be easily secured. For example, the assembly accuracy of the order of several μm can be secured by the current mold technology. Therefore, it is possible to increase the density of the optical bus.

  Further, in the electrical wiring structure according to the conventional example, since the optical waveguide is directly provided on the printed wiring board, the pins and wiring drawn from the semiconductor integrated circuit portions 3a and 3b as the functions of the semiconductor integrated circuit portions 3a and 3b increase. As the number increases, the degree of freedom in designing the printed wiring board is hindered by the optical waveguide. As a result, it has become difficult to increase the functionality of the printed wiring board, and as a result, it has become a situation that relies on SOC (system on chip) that allows all functions to be contained in one chip. On the other hand, according to the optical information processing apparatus 21 according to the present invention, the optical waveguide 22 can be electrically connected to the printed wiring board in a state where it is installed in the concave portion 29 of the socket 28. It is possible to develop an optical wiring system on the printed wiring board at a low cost and with a high degree of freedom while ensuring high-density wiring on the board and the degree of freedom of its design. It can be expected to increase the functionality of the total equipment and shorten the turn around time (TAT) of development.

  Next, an example of the manufacturing method of the optical information processing apparatus 21 based on this invention is demonstrated with reference to FIGS.

  First, as shown in FIGS. 8A and 8B, a pair of sockets 28 are mounted on the printed wiring board 35. At this time, an electrode (not shown) on the printed wiring board 35 and the terminal pin 32 of the socket 28 are aligned and mounted so that the electrode and the socket 28 are electrically connected.

  Although not shown in the figure, other electronic components and electrical wiring are formed on the printed wiring board 35 in advance.

  Next, as shown in FIG. 8C, the optical waveguide 22 is installed in the recess 29 of the socket 28, and the optical waveguide 22 is bridged between the pair of sockets 28. At this time, the projection 30 as the concavo-convex structure provided in the socket 28 can easily position the optical waveguide 22 in the length direction, and the recess 29 can easily position the optical waveguide 22 in the width direction. Can be done. In addition, since the optical waveguide 22 is installed in the concave portion 29 of the socket 28, the optical waveguide 22 and the printed wiring board 35 are in a non-contact state.

  At this time, as shown in a somewhat exaggerated manner in FIG. 11, when the optical waveguide 22 is mounted, the length of the optical waveguide 22 fixed to the socket 28 in the light propagation direction is fixed to the printed wiring board 35. It is desirable that the distance between the pair of sockets 28 be larger. As shown in the figure, by fixing the optical waveguide 22 in a bent state, the positioning error of the socket 28 on the printed wiring board 35 can be absorbed, and stable and efficient optical waveguide can always be performed. it can.

  The means for fixing the optical waveguide 22 to the socket 28 is not particularly limited, and for example, an adhesive resin can be used. Specifically, first, as shown in FIG. 10A, the groove 36 is formed in an arbitrary shape on the bottom surface of the recess 29 of the socket 28. At this time, the end of the groove 36 is formed so as to be located up to the periphery of the protrusion 30 of the socket 28. Next, as shown in FIG. 10B, the optical waveguide 22 in which a plurality of core layers 24 are arranged side by side is installed in the recess 29 of the socket 28. As described above, the positioning of the optical waveguide 22 in the length direction and the width direction can be easily performed by the protrusions 30 and the recesses 29 provided in the socket 28. Here, since the groove 36 is formed so as to be located up to the peripheral portion of the protrusion 30, a part of the groove 36 is not covered by the optical waveguide 22. Next, as shown in FIG. 10C, an adhesive resin is injected from a part of the groove 36 not covered with the optical waveguide 22 by using a dispenser 37 or the like and hardened to thereby form the concave portion 29 of the socket 28. The optical waveguide 22 can be bonded and fixed to the substrate.

  After the optical waveguide 22 is installed in the socket 28 as described above, as shown in FIG. 9D, the semiconductor integrated circuit portion as the semiconductor integrated circuit portion is formed on the convex surface 31 of the socket 28 on one surface side of the interposer 4, for example. An MPU (micro processor unit) 3a or a DRAM (dynamic random access memory) 3b is mounted, the photoelectric conversion element 2 is mounted on the other surface side, and the bias circuit unit including the capacitor 5 and the coil 6 is included in the interposer 4. The provided photoelectric conversion device 1 according to the present invention is fixed. At this time, the surface of the interposer 4 on which the photoelectric conversion element 2 is mounted is configured to be in contact with the convex surface 31 of the socket 28, and terminal pins (not shown) exposed on the convex surface 31 of the socket 28 and rewiring of the interposer 4 It fixes so that an electrode (illustration omitted) may be electrically connected.

  Next, as shown in FIG. 9E, aluminum fins 38 are installed on the MPU 3a and the DRAM 3b, respectively.

  As described above, an optical wiring system in which the optical waveguide 22 is used as an optical wiring can be configured using the optical information processing apparatus 21 according to the present invention.

  Here, FIG. 12 is a schematic diagram showing an example in which the optical information processing apparatus 21 according to the present invention is developed on the printed wiring board 35. For example, by standardizing the optical waveguide module, it can be freely deployed in four directions.

  According to the present embodiment, the photoelectric conversion element 2, the semiconductor integrated circuit unit 3 connected to the photoelectric conversion element 2, and the bias circuit unit (a set of the capacitor 5 and the coil 6) of the semiconductor integrated circuit unit 3. ) Is mounted on the interposer 4, the bias circuit section is provided in the interposer 4, so that the semiconductor integrated circuit sections 3 a and 3 b and the photoelectric conversion element are provided as in the conventional example described above. No signal skew occurs due to the difference in signal line length with respect to No. 2, and it is necessary to form through vias in the semiconductor integrated circuit portions 3a and 3b in order to connect the semiconductor integrated circuit portions 3a and 3b and the bias circuit portion. Nor. In addition, there is no new design of the semiconductor integrated circuit portions 3a and 3b which requires a great deal of cost and time.

  Therefore, the photoelectric conversion apparatus 1 according to the present invention has a simple structure, enables high-frequency modulation with less noise, and can stably drive the photoelectric conversion element 2.

  Further, the signal lines between the semiconductor integrated circuit portions 3a and 3b and the photoelectric conversion element 2 can be made short and equal in length. Therefore, countermeasures against noise and crosstalk in the electric signal are facilitated, and the light modulation speed can be improved.

  Further, since the optical waveguide 22 can be electrically connected to the printed wiring board 35 in a state where it is installed in the recess 29 of the socket 28, the existing mounting structure of the printed wiring board 35 can be used as it is. Therefore, if an area where the socket 28 can be installed is provided on the printed wiring board 35, other general electric wiring can be formed by a conventional process.

  Even if the optical waveguide 22 is vulnerable to high-temperature processes, as described above, the socket 28 is fixed to the printed wiring board 35, and all mounting processes including high-temperature processes such as solder reflow and underfill resin sealing are performed. After completion, the optical waveguide 22 is installed in the recess 29 of the socket 28, so that the optical waveguide can be mounted without suffering damage due to high temperature.

  Further, since the socket 28 can be made of a resin having higher rigidity than the printed wiring board 35, and the light coupling between the light emitting element 13a or the light receiving element 13b and the optical waveguide 22 can be performed on the socket 28, Mounting accuracy required for optical coupling can be easily secured. For example, the assembly accuracy of the order of several μm can be secured by the current mold technology. Therefore, it is possible to increase the density of the optical bus.

  In addition, since the optical waveguide 22 can be electrically connected to the printed wiring board 35 in a state where it is installed in the recess 29 of the socket 28, the high-density wiring of the printed wiring board 35 and the degree of design freedom are secured. An optical wiring system can be developed on the printed wiring board at a low cost and with a high degree of freedom. High-speed distributed processing on the printed wiring board, high functionality in total electronic equipment, and short development TAT (turn around time).

  Further, the semiconductor integrated circuit portions 3a and 3b are mounted on the socket 28 via the interposer 4, and a space 34 is formed between the one surface 33 side of the optical waveguide 22 and the interposer 4 according to the present invention. As a result, even if the semiconductor integrated circuit portions 3a and 3b generate heat when the optical information processing apparatus 21 is used, the optical waveguide 22 can be effectively prevented from being destroyed by this heat.

  As mentioned above, although embodiment of this invention was described, the above-mentioned example can be variously modified based on the technical idea of this invention.

  For example, the bias power source may be mounted on the interposer according to the present invention, or the bias power source may be supplied from the printed wiring board through the socket.

  In addition, an example in which a terminal pin is provided as a conduction means for conducting the front and back surfaces of the socket has been described, but in addition to this, a through electrode is provided in the socket, and the socket and the printed wiring board are provided. The interposer according to the present invention may be electrically connected by solder.

  Further, as shown in FIG. 13, the socket may have an interposer positioning mechanism 39 (for example, a fitting boss) according to the present invention on the convex surface 31, and its shape, size, etc. are particularly limited. Not.

  Further, the shape, size, etc. of the protrusion 30 formed in the recess 29 of the socket 28 are not particularly limited.

  Furthermore, in the present invention, the optical waveguide is not particularly limited, and any conventionally known optical waveguide can be used.

  The present invention is suitable for the above-described optical wiring system in which a signal is placed on a laser beam. However, the present invention can also be applied to a display or the like by selecting a light source or the like.

  The present invention efficiently collects and emits a predetermined light flux by an optical waveguide, or causes the signal light emitted after being efficiently incident on the optical waveguide to enter a light receiving element (such as an optical wiring or a photodetector) in the next stage circuit. It can be suitably used as an optical information processing apparatus such as an optical wiring configured as described above.

It is a schematic sectional drawing of the photoelectric conversion apparatus based on this invention by embodiment of this invention. FIG. 2 is a schematic plan view of each substrate when the interposer according to the present invention is configured from six substrates. 2 is an equivalent circuit diagram of the interposer according to the present invention. FIG. It is a schematic sectional drawing of the interposer based on this invention. It is a schematic sectional drawing of the optical information processing apparatus based on this invention. It is a schematic perspective view of the socket suitably used for the optical information processing apparatus based on this invention. It is a schematic sectional drawing of an example of the optical information processing apparatus based on this invention. FIG. 2 is a schematic cross-sectional view showing an example of a method for manufacturing an optical information processing apparatus according to the present invention in the order of steps. FIG. 2 is a schematic cross-sectional view showing an example of a method for manufacturing an optical information processing apparatus according to the present invention in the order of steps. It is a schematic sectional drawing which shows the partial process of the manufacturing method of the optical information processing apparatus based on this invention. 1 is a partial schematic cross-sectional view of an optical information processing apparatus according to the present invention. It is a schematic diagram which shows the example which expand | deployed the optical information processing apparatus based on this invention on the printed wiring board. It is a schematic perspective view of the other example of the socket used suitably for the optical information processing apparatus based on this invention. It is a schematic sectional drawing which shows the mounting structure of the optical waveguide by a prior art example. 4 is a graph showing a comparison between an LSI current output and a current output for driving a light emitting element. It is a schematic sectional drawing which shows the example of mounting of LSI, a light emitting element drive circuit, and a light emitting element by a prior art example. It is a schematic sectional drawing which shows the mounting example of LSI, a light emitting element drive circuit, and a light emitting element similarly.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Photoelectric conversion apparatus, 2 ... Photoelectric conversion element, 3 ... Semiconductor integrated circuit part, 4 ... Interposer, 5 ... Capacitor, 6 ... Coil, 7a, 7b ... Connection land, 8 ... Pad electrode,
9a, 9b ... solder bump, 10 ... electrode, 11 ... bias power supply terminal,
12 ... Substrate (photoelectric conversion element), 13 ... Photoelectric conversion part, 13a ... Light emitting element,
13b ... light receiving element, 14, 18 ... through via, 15 ... lead-out wiring,
16 ... Ground (GND) electrodes, 17a-17f ... Substrate (interposer),
DESCRIPTION OF SYMBOLS 19 ... Wiring material, 20 ... Insulating film, 21 ... Optical information processing apparatus, 22 ... Optical waveguide,
23a, 23b ... clad, 24 ... core layer, 25 ... lens member, 26 ... lens,
27 ... Signal light, 28 ... Socket, 29 ... Recess, 30 ... Protrusion, 31 ... Convex surface,
32 ... Terminal pin, 35 ... Printed wiring board

Claims (15)

  In a photoelectric conversion device in which a photoelectric conversion element, a semiconductor integrated circuit unit connected to the photoelectric conversion element, and a bias circuit unit of the semiconductor integrated circuit unit are mounted on an interposer, the bias circuit unit is included in the interposer. A photoelectric conversion device characterized by being provided.   The photoelectric conversion device according to claim 1, wherein the bias circuit unit includes a capacitor and a coil provided in the interposer.   The photoelectric conversion device according to claim 2, wherein the capacitor is formed of a dielectric substrate material of the interposer, and the coil is formed of a wiring material in the interposer.   The semiconductor integrated circuit portion is mounted on one surface side of the interposer, the photoelectric conversion element is mounted on the other surface side, and the semiconductor integrated circuit portion and the photoelectric conversion element are interposed via the capacitor in the interposer. The photoelectric conversion device according to claim 2, wherein the coil is connected to a midpoint of connection, and a bias power supply terminal to the coil is taken out via the interposer.   A plurality of connection lands respectively connected to a plurality of pad electrodes of the semiconductor integrated circuit portion are formed on the interposer, and a plurality of sets of the capacitor and the coil correspond to the plurality of connection lands, respectively. The photoelectric conversion device according to claim 4, wherein the photoelectric conversion device is provided in the interposer and connected to each electrode of the photoelectric conversion element via the interposer.   The photoelectric conversion device according to claim 1, wherein the photoelectric conversion element is configured to be driven by an output of the semiconductor integrated circuit unit.   The photoelectric conversion device according to claim 1, wherein an output of the photoelectric conversion element is configured to be input to the semiconductor integrated circuit unit.   A photoelectric conversion element, a semiconductor integrated circuit unit connected to the photoelectric conversion element, and a bias circuit unit of the semiconductor integrated circuit unit are mounted to constitute a photoelectric conversion device, and the bias circuit unit is provided therein , Interposer.   The interposer according to claim 8, wherein the bias circuit unit includes an internal capacitor and a coil.   The interposer according to claim 9, wherein the capacitor is formed of a dielectric substrate material, and the coil is formed of an internal wiring material.   The semiconductor integrated circuit portion is mounted on one surface side, the photoelectric conversion element is mounted on the other surface side, and the semiconductor integrated circuit portion and the photoelectric conversion element are connected via the internal capacitor. The interposer according to claim 9, wherein the coil is connected to a midpoint of connection, and a bias power supply terminal to the coil is taken out.   A plurality of connection lands that are respectively connected to the plurality of pad electrodes of the semiconductor integrated circuit portion are formed on the upper portion, and a plurality of sets of the capacitor and the coil are provided corresponding to the plurality of connection lands, respectively. The interposer according to claim 11, wherein the interposer is connected to each electrode of the photoelectric conversion element.   The interposer according to claim 8, wherein the photoelectric conversion element is driven by an output of the semiconductor integrated circuit unit.   The interposer according to claim 8, wherein an output of the photoelectric conversion element is configured to be input to the semiconductor integrated circuit unit.   An optical information processing apparatus comprising: the photoelectric conversion device according to claim 1; and an optical waveguide facing the photoelectric conversion element.

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