JP2005235830A - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP2005235830A JP2005235830A JP2004039637A JP2004039637A JP2005235830A JP 2005235830 A JP2005235830 A JP 2005235830A JP 2004039637 A JP2004039637 A JP 2004039637A JP 2004039637 A JP2004039637 A JP 2004039637A JP 2005235830 A JP2005235830 A JP 2005235830A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005253 cladding Methods 0.000 claims description 71
- 238000002310 reflectometry Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 25
- 238000009826 distribution Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
活性層への光閉じ込め係数を低くした場合でも、簡単な構成で高出力が得られ、モード変移の起こりにくい半導体レーザを提供する。
【解決手段】
InPからなる半導体基板11上に、多重量子井戸構造を含む活性層14と、活性層14を挟むn型クラッド層32及びInPからなるp型クラッド層18と、活性層14に電流を注入するためのp電極20及びn電極21とを設けるとともに、光の出射端面が高反射率膜の施された端面22bと低反射率膜の施された端面22aとでなる半導体レーザにおいて、n型クラッド層32をInGaAsPによって構成し、かつ、p電極20及びn電極21のどちらか一方を活性層14のストライプ方向に複数個に分割し、分割された複数個の電極のそれぞれから活性層14に注入される電流密度が高反射率膜の施された端面22bから低反射率膜の施された端面22aに向かって増加するようにしている。
【選択図】
図8
Description
(4)リフトオフ法によりp型コンタクト層19の上面にp電極パターンを形成した後、これをマスクとしてコンタクト層を硫酸系エッチング溶液で削り、電極分離用の溝24a、24bを形成する。そして、半導体基板11の下面にn電極21を形成してから、長さ2.3mmで切り出し、端面の一方にHR膜を施してHR端面22bとし、他方にLR膜を施してLR端面22aとして、半導体レーザ40となる。
Claims (3)
- InPからなる半導体基板(11)上に、多重量子井戸構造を含む活性層(14)と、該活性層を挟むn型クラッド層(32)及びInPからなるp型クラッド層(18)と、前記活性層に電流を注入するためのp電極(20)及びn電極(21)とを設けるとともに、光の出射端面が高反射率膜の施された端面(22b)と低反射率膜の施された端面(22a)とでなる半導体レーザにおいて、
前記n型クラッド層をInGaAsPによって構成し、
かつ、前記活性層の上方に位置する前記p電極または前記n電極のいずれか一方を前記活性層のストライプ方向に複数個に分割したことを特徴とする半導体レーザ。 - 前記複数個に分割されたそれぞれの電極の活性層上を占める長さが、前記高反射率膜の施された端面から前記低反射率膜の施された端面に向かって減少していることを特徴とする請求項1記載の半導体レーザ。
- 前記n型クラッド層を構成する前記InGaAsPの組成波長が0.98μm以下であることを特徴とする請求項1〜2のいずれかに記載の半導体レーザ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004039637A JP3691507B2 (ja) | 2004-02-17 | 2004-02-17 | 半導体レーザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004039637A JP3691507B2 (ja) | 2004-02-17 | 2004-02-17 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
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JP2005235830A true JP2005235830A (ja) | 2005-09-02 |
JP3691507B2 JP3691507B2 (ja) | 2005-09-07 |
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JP2004039637A Expired - Lifetime JP3691507B2 (ja) | 2004-02-17 | 2004-02-17 | 半導体レーザ |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2501509A (en) * | 2012-04-25 | 2013-10-30 | Oclaro Technology Ltd | Laser device |
JP2016026410A (ja) * | 2010-04-06 | 2016-02-12 | トゥー−シックス レイザー エンタープライズ ゲーエムベーハー | 半導体レーザーダイオード |
-
2004
- 2004-02-17 JP JP2004039637A patent/JP3691507B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016026410A (ja) * | 2010-04-06 | 2016-02-12 | トゥー−シックス レイザー エンタープライズ ゲーエムベーハー | 半導体レーザーダイオード |
GB2501509A (en) * | 2012-04-25 | 2013-10-30 | Oclaro Technology Ltd | Laser device |
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JP3691507B2 (ja) | 2005-09-07 |
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