JP2005234362A - Radiation sensitive resin composition for forming spacer, spacer, method for forming same and liquid crystal display element - Google Patents
Radiation sensitive resin composition for forming spacer, spacer, method for forming same and liquid crystal display element Download PDFInfo
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- JP2005234362A JP2005234362A JP2004045033A JP2004045033A JP2005234362A JP 2005234362 A JP2005234362 A JP 2005234362A JP 2004045033 A JP2004045033 A JP 2004045033A JP 2004045033 A JP2004045033 A JP 2004045033A JP 2005234362 A JP2005234362 A JP 2005234362A
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- spacer
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- radiation
- branched
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- 125000006850 spacer group Chemical group 0.000 title claims abstract description 88
- 230000005855 radiation Effects 0.000 title claims abstract description 78
- 239000011342 resin composition Substances 0.000 title claims abstract description 41
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 101
- 229920001577 copolymer Polymers 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000003505 polymerization initiator Substances 0.000 claims abstract description 25
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 23
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 8
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 238000011161 development Methods 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 125000001424 substituent group Chemical group 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 claims description 8
- 125000003700 epoxy group Chemical group 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 14
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 238000000859 sublimation Methods 0.000 abstract description 12
- 230000008022 sublimation Effects 0.000 abstract description 12
- 239000007788 liquid Substances 0.000 abstract description 10
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 150000008064 anhydrides Chemical class 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- -1 2-bromo-4-morpholinophenyl Chemical group 0.000 description 106
- 229910052757 nitrogen Inorganic materials 0.000 description 60
- 239000010408 film Substances 0.000 description 40
- 239000000243 solution Substances 0.000 description 21
- 239000002904 solvent Substances 0.000 description 17
- UUEVFMOUBSLVJW-UHFFFAOYSA-N oxo-[[1-[2-[2-[2-[4-(oxoazaniumylmethylidene)pyridin-1-yl]ethoxy]ethoxy]ethyl]pyridin-4-ylidene]methyl]azanium;dibromide Chemical compound [Br-].[Br-].C1=CC(=C[NH+]=O)C=CN1CCOCCOCCN1C=CC(=C[NH+]=O)C=C1 UUEVFMOUBSLVJW-UHFFFAOYSA-N 0.000 description 16
- 125000004663 dialkyl amino group Chemical group 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 14
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 14
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 12
- 239000004094 surface-active agent Substances 0.000 description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 10
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 10
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- AGJAUFUNZWHLKE-UHFFFAOYSA-N (2E,4E)-N-isobutyl-2,4-tetradecadienamide Natural products CCCCCCCCCC=CC=CC(=O)NCC(C)C AGJAUFUNZWHLKE-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 150000008062 acetophenones Chemical class 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229940022663 acetate Drugs 0.000 description 6
- 125000004849 alkoxymethyl group Chemical group 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 5
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 5
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Natural products CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 description 4
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 4
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 4
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 4
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- NWAHZAIDMVNENC-UHFFFAOYSA-N octahydro-1h-4,7-methanoinden-5-yl methacrylate Chemical compound C12CCCC2C2CC(OC(=O)C(=C)C)C1C2 NWAHZAIDMVNENC-UHFFFAOYSA-N 0.000 description 4
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 4
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- JKQRNTIBBOTABS-UHFFFAOYSA-N 2-(2,4-dichlorophenyl)-1-[2-(2,4-dichlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC(Cl)=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(Cl)=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JKQRNTIBBOTABS-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 3
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 3
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 230000001588 bifunctional effect Effects 0.000 description 3
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 3
- 125000006606 n-butoxy group Chemical group 0.000 description 3
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- SSLASPHAKUVIRG-UHFFFAOYSA-N (2-methylcyclohexyl) prop-2-enoate Chemical compound CC1CCCCC1OC(=O)C=C SSLASPHAKUVIRG-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- RWEAGLZFYKQPLZ-UHFFFAOYSA-N 1-[4,5-diphenyl-2-(2,4,6-trichlorophenyl)imidazol-2-yl]-4,5-diphenyl-2-(2,4,6-trichlorophenyl)imidazole Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(Cl)=CC=2Cl)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 RWEAGLZFYKQPLZ-UHFFFAOYSA-N 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- SDJHPPZKZZWAKF-UHFFFAOYSA-N 2,3-dimethylbuta-1,3-diene Chemical compound CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- MHDULSOPQSUKBQ-UHFFFAOYSA-N 2-(2-chlorophenyl)-1-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MHDULSOPQSUKBQ-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 2
- MSRXOZBVYNEKMN-UHFFFAOYSA-N 2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)-2-[(4-propylphenyl)methyl]butan-1-one Chemical compound C1=CC(CCC)=CC=C1CC(CC)(N(C)C)C(=O)C1=CC=C(N2CCOCC2)C=C1 MSRXOZBVYNEKMN-UHFFFAOYSA-N 0.000 description 2
- QCOMLQSVINKFDL-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-ethylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C1=CC(CC)=CC=C1CC(CC)(N(C)C)C(=O)C1=CC=C(N2CCOCC2)C=C1 QCOMLQSVINKFDL-UHFFFAOYSA-N 0.000 description 2
- PFHOSZAOXCYAGJ-UHFFFAOYSA-N 2-[(2-cyano-4-methoxy-4-methylpentan-2-yl)diazenyl]-4-methoxy-2,4-dimethylpentanenitrile Chemical compound COC(C)(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)(C)OC PFHOSZAOXCYAGJ-UHFFFAOYSA-N 0.000 description 2
- JFWFAUHHNYTWOO-UHFFFAOYSA-N 2-[(2-ethenylphenyl)methoxymethyl]oxirane Chemical compound C=CC1=CC=CC=C1COCC1OC1 JFWFAUHHNYTWOO-UHFFFAOYSA-N 0.000 description 2
- OCKQMFDZQUFKRD-UHFFFAOYSA-N 2-[(3-ethenylphenyl)methoxymethyl]oxirane Chemical compound C=CC1=CC=CC(COCC2OC2)=C1 OCKQMFDZQUFKRD-UHFFFAOYSA-N 0.000 description 2
- ZQKDXHPMNUKDGF-UHFFFAOYSA-N 2-[(4-butylphenyl)methyl]-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C1=CC(CCCC)=CC=C1CC(CC)(N(C)C)C(=O)C1=CC=C(N2CCOCC2)C=C1 ZQKDXHPMNUKDGF-UHFFFAOYSA-N 0.000 description 2
- ZADXFVHUPXKZBJ-UHFFFAOYSA-N 2-[(4-ethenylphenyl)methoxymethyl]oxirane Chemical compound C1=CC(C=C)=CC=C1COCC1OC1 ZADXFVHUPXKZBJ-UHFFFAOYSA-N 0.000 description 2
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- IRDUOPGQGCBTTD-UHFFFAOYSA-N 2-benzyl-1-(2-bromo-4-morpholin-4-ylphenyl)-2-(dimethylamino)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=C(Br)C=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 IRDUOPGQGCBTTD-UHFFFAOYSA-N 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- ZQAXBTFXHKKQHN-UHFFFAOYSA-N 2-n-(propoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound CCCOCNC1=NC(N)=NC(N)=N1 ZQAXBTFXHKKQHN-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
本発明は、スペーサー形成用感放射線性樹脂組成物、スペーサーとその形成方法および液晶表示素子に関わり、さらに詳しくは、液晶表示パネルやタッチパネルなどの表示パネルに用いられるスペーサーを形成するための用いられる感放射線性樹脂組成物、当該組成物から形成されたスペーサーとその形成方法、および当該スペーサーを具備してなる液晶表示素子に関する。 The present invention relates to a radiation-sensitive resin composition for forming a spacer, a spacer, a method for forming the spacer, and a liquid crystal display element, and more specifically, used for forming a spacer used in a display panel such as a liquid crystal display panel or a touch panel. The present invention relates to a radiation-sensitive resin composition, a spacer formed from the composition, a method for forming the spacer, and a liquid crystal display device including the spacer.
液晶表示素子には、従来から、2枚の透明基板間の間隔(セルギャップ)を一定に保つため、所定の粒径を有するガラスビーズ、プラスチックビーズ等のスペーサー粒子が使用されているが、これらのスペーサー粒子は、ガラス基板などの透明基板上にランダムに散布されるため、画素形成領域にスペーサー粒子が存在すると、スペーサー粒子の写り込み現象を生じたり、入射光が散乱を受け、液晶表示素子のコントラストが低下するという問題があった。
そこで、これらの問題を解決するために、スペーサーをフォトリソグラフィーにより形成する方法が採用されるようになってきた。この方法は、基板上に感放射線性樹脂組成物の被膜を形成し、所定のマスクを介して紫外線を露光したのち現像して、ドット状やストライプ状のスペーサーを形成するものであり、画素形成領域以外の所定の場所にのみスペーサーを形成することができるため、前述したような問題は基本的には解決される。
Conventionally, liquid crystal display elements have been used spacer particles such as glass beads and plastic beads having a predetermined particle diameter in order to keep the distance (cell gap) between two transparent substrates constant. Since the spacer particles are randomly distributed on a transparent substrate such as a glass substrate, if the spacer particles are present in the pixel formation region, the spacer particles may be reflected, or the incident light may be scattered and the liquid crystal display element There was a problem that the contrast of the image was lowered.
In order to solve these problems, a method of forming a spacer by photolithography has been adopted. In this method, a film of a radiation sensitive resin composition is formed on a substrate, exposed to ultraviolet rays through a predetermined mask, and then developed to form dot-like or stripe-like spacers. Since the spacer can be formed only at a predetermined place other than the region, the above-described problem is basically solved.
ところで、実際のスペーサー形成プロセス、例えばカラーフィルターなどに用いられる透明基板上にフォトリソグラフィーによりスペーサーを形成する場合には、プロキシミティー露光機を使用することが多い。このプロキシミティー露光の場合、露光に用いられるフォトマスクと感放射線性樹脂組成物の被膜を形成した基板との間に一定のギャップを設けて露光しており、フォトマスクどおりのパターンで露光されるのが理想的である。しかし、このギャップは空気または窒素で満たされており、フォトマスクの開口部(透明部)を通過した光が該ギャップ部で拡散して広がるため、マスクパターンの設計サイズより広めに露光されるという問題があった。
そこで、このような問題を解決すべく、本出願人は既に、特許文献1に、感放射線性樹脂組成物の感放射線性重合開始剤として1,2−オクタンジオン−1−〔4−(フェニルチオ)フェニル〕−2−(O−ベンゾイルオキシム)を使用することにより、プロキシミティー露光によってもマスクパターンの設計サイズを忠実に再現でき、また強度、耐熱性等にも優れた表示パネル用スペーサーを形成できることを明らかにしている。
By the way, when a spacer is formed by photolithography on a transparent substrate used in an actual spacer forming process, for example, a color filter, a proximity exposure machine is often used. In the case of this proximity exposure, a certain gap is provided between the photomask used for exposure and the substrate on which the coating of the radiation-sensitive resin composition is formed, and the exposure is performed in a pattern as in the photomask. Is ideal. However, this gap is filled with air or nitrogen, and light that has passed through the opening (transparent part) of the photomask diffuses and spreads in the gap, so that the exposure is made wider than the design size of the mask pattern. There was a problem.
Therefore, in order to solve such a problem, the present applicant has already disclosed Patent Document 1 as 1,2-octanedione-1- [4- (phenylthiol) as a radiation-sensitive polymerization initiator of a radiation-sensitive resin composition. ) Phenyl] -2- (O-benzoyloxime) can faithfully reproduce the mask pattern design size even by proximity exposure, and form a display panel spacer with excellent strength and heat resistance. It reveals what can be done.
また近年、液晶表示素子の大面積化や生産性の向上等から、マザーガラス基板のサイズが、従来の680×880mm程度から、1,500×1,800mm程度まで大型化してきている。スペーサーの形成工程では、通常、透明基板にスペーサー形成用感放射線性樹脂組成物を塗布し、ホットプレート上で焼成して溶剤を除去したのち、露光し、現像してスペーサーを形成している。しかし基板の大型化に伴って、スペーサーの形成時に感放射線性樹脂組成物中の感放射線性重合開始剤成分が昇華し、焼成炉やフォトマスクを汚染する問題が、生産タクトの低下および生産コストの上昇を引き起こすことから懸念されている。
さらに本出願人は、特許文献2に、感放射線性樹脂組成物の感放射線性重合開始剤として1−(2−ブロモ−4−モルフォリノフェニル)−2−ベンジル−2−ジメチルアミノブタン−1−オンや1−(3−ブロモ−4−モルフォリノフェニル)−2−ベンジル−2−ジメチルアミノブタン−1−オン等の臭素置換アセトフェノン系化合物を使用することにより、感放射線性重合開始剤成分の昇華による焼成炉や排気ダクトの汚染、現像液を繰り返し用いる場合の現像ライン中に設けられたフィルターの詰り等を低減できることを示している。
In recent years, the size of the mother glass substrate has been increased from about 680 × 880 mm to about 1,500 × 1,800 mm due to the increase in the area of the liquid crystal display device and the improvement of productivity. In the spacer forming step, the spacer-forming radiation-sensitive resin composition is usually applied to a transparent substrate, baked on a hot plate to remove the solvent, and then exposed and developed to form the spacer. However, with the increase in size of the substrate, the radiation sensitive polymerization initiator component in the radiation sensitive resin composition sublimates during the formation of the spacer, which contaminates the baking furnace and photomask. Concern from causing the rise.
Furthermore, the present applicant states in
スペーサーの形成に用いられる感放射線性樹脂組成物は、通常、(メタ)アクリル酸エステル等の重合性不飽和化合物やエポキシ基等の熱架橋性基を有する化合物を含んでいるため、保存中の重合や架橋反応を防止するために、組成物溶液として室温より低い温度で保存する場合が多い。しかし、特許文献2に記載の臭素置換アセトフェノン系化合物は、低温度での保存中に再結晶化して析出する場合が多く、また臭素置換アセトフェノン系化合物が再結晶化した組成物溶液の温度を室温以上に上げても、再結晶化した成分は再溶解しにくく、スペーサーの形成工程中に液中異物として残存するため、基板に塗布時の筋ムラの発生や感度の低下等を引き起こすおそれが非常に高い。
The radiation-sensitive resin composition used for forming the spacer usually contains a polymerizable unsaturated compound such as (meth) acrylic acid ester or a compound having a thermally crosslinkable group such as an epoxy group. In order to prevent polymerization and crosslinking reaction, the composition solution is often stored at a temperature lower than room temperature. However, the bromine-substituted acetophenone compound described in
しかしながら、特許文献1および特許文献2に記載のものも含め、スペーサーの形成に用いられる従来の感放射線性樹脂組成物では、感放射線性重合開始剤成分の昇華による焼成炉やフォトマスク等の汚染および液中異物の発生を防止するという面では十分とはいえず、これらの特性も併せ備えた感放射線性樹脂組成物の開発が強く望まれていた。
However, in the conventional radiation-sensitive resin composition used for forming the spacer, including those described in Patent Document 1 and
本発明の課題は、感放射線性重合開始剤成分の昇華による焼成炉やフォトマスク等の汚染を抑制でき、液中異物を生じることがなく、かつ高感度および高解像度であり、しかも断面形状、圧縮強度、ラビング耐性、透明基板との密着性等の諸性能に優れたスペーサーを容易に形成することができるスペーサー用感放射線性樹脂組成物、それから形成されたスペーサーとその形成方法、および当該スペーサーを具備する液晶表示素子を提供することにある。 The object of the present invention is to suppress contamination of the baking furnace, photomask, etc. due to sublimation of the radiation-sensitive polymerization initiator component, without causing foreign matter in the liquid, and with high sensitivity and high resolution, and also with a cross-sectional shape, A radiation-sensitive resin composition for spacers capable of easily forming a spacer excellent in various performances such as compressive strength, rubbing resistance, adhesion to a transparent substrate, the spacer formed therefrom, its formation method, and the spacer It is providing the liquid crystal display element which comprises.
本発明は、第一に、
〔A〕(a1)不飽和カルボン酸および/または不飽和カルボン酸無水物と(a2)エポキシ基含有不飽和化合物と(a3)他の不飽和化合物との共重合体、
〔B〕重合性不飽和化合物、並びに
〔C〕下記一般式(1)で表される化合物を必須成分とする感放射線性重合開始剤
を含有することを特徴とするスペーサー形成用感放射線性樹脂組成物、
からなる。
The present invention, first,
[A] a copolymer of (a1) an unsaturated carboxylic acid and / or an unsaturated carboxylic acid anhydride, (a2) an epoxy group-containing unsaturated compound, and (a3) another unsaturated compound,
[B] A radiation-sensitive resin for spacer formation, comprising a polymerizable unsaturated compound and [C] a radiation-sensitive polymerization initiator having a compound represented by the following general formula (1) as essential components Composition,
Consists of.
〔一般式(1)において、R1 は炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基を示し、R2 およびR3 は相互に独立に水素原子;炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基またはベンジル基を示し、R4 、R5 、R7 およびR8 は相互に独立に水素原子;ハロゲン原子;炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基または炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基を示し、R6 はハロゲン原子;炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基;水酸基および炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基の群から選ばれる置換基で置換された炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基;炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基;または水酸基および炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基の群から選ばれる置換基で置換された炭素数2〜4の直鎖状もしくは分岐状のアルコキシル基を示す。〕
本発明でいう「放射線」とは、紫外線、遠紫外線、X線、電子線、分子線、γ線、シンクロトロン放射線、プロトンビーム線等を含むものを意味する。
[In General Formula (1), R 1 represents a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, R 2 and R 3 are independently a hydrogen atom; A linear, branched or cyclic alkyl group or a benzyl group, wherein R 4 , R 5 , R 7 and R 8 are each independently a hydrogen atom; a halogen atom; a linear or branched chain having 1 to 12 carbon atoms A linear or branched alkyl group having 1 to 4 carbon atoms or a linear or branched alkoxyl group having 1 to 4 carbon atoms, wherein R 6 is a halogen atom; a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms; a hydroxyl group And a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms substituted with a substituent selected from the group of linear or branched alkoxyl groups having 1 to 4 carbon atoms; A linear or branched alkoxyl group of Other denotes a hydroxyl group and a linear or branched linear or branched alkoxyl group having 2 to 4 carbon atoms which is substituted with a substituent selected from the group of alkoxy group having 1 to 4 carbon atoms. ]
The term “radiation” as used in the present invention means one containing ultraviolet rays, far ultraviolet rays, X-rays, electron beams, molecular beams, γ rays, synchrotron radiation, proton beam rays, and the like.
本発明は、第二に、前記スペーサー形成用感放射線性樹脂組成物から形成されてなるスペーサー、からなる。 Secondly, the present invention comprises a spacer formed from the radiation-sensitive resin composition for forming a spacer.
本発明は、第三に、少なくとも下記(イ)〜(二)の工程を含むことを特徴とするスペーサーの形成方法、からなる。
(イ)請求項1に記載のスペーサー形成用感放射線性樹脂組成物の被膜を基板上に形成する工程。
(ロ)該被膜の少なくとも一部に放射線を露光する工程。
(ハ)露光後の該被膜を現像する工程。
(ニ)現像後の該被膜を加熱する工程。
Thirdly, the present invention comprises a method for forming a spacer, characterized by including at least the following steps (a) to (2).
(A) A step of forming a coating of the radiation-sensitive resin composition for forming a spacer according to claim 1 on a substrate.
(B) A step of exposing radiation to at least a part of the coating.
(C) A step of developing the film after exposure.
(D) A step of heating the coated film after development.
本発明は、第四に、前記スペーサーを具備してなる液晶表示素子、からなる。 Fourthly, the present invention comprises a liquid crystal display element comprising the spacer.
以下、本発明について詳細に説明する。
スペーサー用感放射線性樹脂組成物
以下、本発明のスペーサー用感放射線性樹脂組成物(以下、単に「感放射線性樹脂組成物」という。)の各成分について詳述する。
−〔A〕共重合体−
本発明の感放射線性樹脂組成物における〔A〕成分は、(a1)不飽和カルボン酸および/または不飽和カルボン酸無水物(以下、これらをまとめて「化合物(a1)」という。)、(a2)エポキシ基含有不飽和化合物(以下、「化合物(a2)」という。)および(a3)他の不飽和化合物(以下、「化合物(a3)」という。)の共重合体(以下、「〔A〕共重合体」という。)からなる。
Hereinafter, the present invention will be described in detail.
The following spacer radiation sensitive resin composition, the spacer radiation sensitive resin composition of the present invention (hereinafter, simply referred to as. "Radiation-sensitive resin composition") will be described in detail each component of.
-[A] copolymer-
The component [A] in the radiation-sensitive resin composition of the present invention is (a1) an unsaturated carboxylic acid and / or an unsaturated carboxylic acid anhydride (hereinafter collectively referred to as “compound (a1)”), ( a2) a copolymer of an epoxy group-containing unsaturated compound (hereinafter referred to as “compound (a2)”) and (a3) another unsaturated compound (hereinafter referred to as “compound (a3)”) (hereinafter referred to as “[ A] a copolymer ").
化合物(a1)としては、例えば、アクリル酸、メタクリル酸、クロトン酸、コハク酸モノ(2−アクリロイロキシエチル)、コハク酸モノ(2−メタクリロイロキシエチル)、ヘキサヒドロフタル酸モノ(2−アクリロイロキシエチル)、ヘキサヒドロフタル酸モノ(2−メタクリロイロキシエチル)等のモノカルボン酸類;マレイン酸、フマル酸、シトラコン酸、メサコン酸、イタコン酸等のジカルボン酸類;これらのジカルボン酸の無水物類等を挙げることができる。
これらの化合物(a1)のうち、アクリル酸、メタクリル酸、無水マレイン酸等が、共重合反応性および入手が容易である点から好ましい。
前記化合物(a1)は、単独でまたは2種以上を混合して使用することができる。
Examples of the compound (a1) include acrylic acid, methacrylic acid, crotonic acid, succinic acid mono (2-acryloyloxyethyl), succinic acid mono (2-methacryloyloxyethyl), hexahydrophthalic acid mono (2- Monocarboxylic acids such as acryloyloxyethyl) and hexahydrophthalic acid mono (2-methacryloyloxyethyl); dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid and itaconic acid; and anhydrides of these dicarboxylic acids Examples can be given.
Of these compounds (a1), acrylic acid, methacrylic acid, maleic anhydride and the like are preferable from the viewpoint of copolymerization reactivity and availability.
The said compound (a1) can be used individually or in mixture of 2 or more types.
〔A〕共重合体において、化合物(a1)から誘導される構成単位の含有率は、好ましくは5〜50重量%、さらに好ましくは10〜40重量%である。この場合、該構成単位の含有率が5重量%未満であると、得られるスペーサーの圧縮強度、耐熱性や耐薬品性が低下する傾向があり、一方50重量%を超えると、感放射線性樹脂組成物の保存安定性が低下するおそれがある。 [A] In the copolymer, the content of the structural unit derived from the compound (a1) is preferably 5 to 50% by weight, more preferably 10 to 40% by weight. In this case, if the content of the structural unit is less than 5% by weight, the compressive strength, heat resistance and chemical resistance of the resulting spacer tend to decrease, while if it exceeds 50% by weight, the radiation sensitive resin The storage stability of the composition may be reduced.
また、化合物(a2)としては、例えば、アクリル酸グリシジル、メタクリル酸グリシジル、α−エチルアクリル酸グリシジル、α−n−プロピルアクリル酸グリシジル、α−n−ブチルアクリル酸グリシジル、アクリル酸3,4−エポキシブチル、メタクリル酸3,4−エポキシブチル、α−エチルアクリル酸3,4−エポキシブチル、アクリル酸6,7−エポキシヘプチル、メタクリル酸6,7−エポキシヘプチル、α−エチルアクリル酸6,7−エポキシヘプチル、アクリル酸β−メチルグリシジル、メタクリル酸β−メチルグリシジル、アクリル酸β−エチルグリシジル、メタクリル酸β−エチルグリシジル、アクリル酸β−n−プロピルグリシジル、メタクリル酸β−n−プロピルグリシジル、アクリル酸3,4−エポキシシクロヘキシル、メタクリル酸3,4−エポキシシクロヘキシル等のカルボン酸エステル類;o−ビニルベンジルグリシジルエーテル、m−ビニルベンジルグリシジルエーテル、p−ビニルベンジルグリシジルエーテル等のエーテル類等を挙げることができる。
これらの化合物(a2)のうち、メタクリル酸グリシジル、メタクリル酸6,7−エポキシヘプチル、メタクリル酸β−メチルグリシジル、メタクリル酸3,4−エポキシシクロヘキシル、o−ビニルベンジルグリシジルエーテル、m−ビニルベンジルグリシジルエーテル、p−ビニルベンジルグリシジルエーテル等が、共重合反応性および得られるスペーサーの強度を高める点から好ましい。
前記化合物(a2)は、単独でまたは2種以上を混合して使用することができる。
Examples of the compound (a2) include glycidyl acrylate, glycidyl methacrylate, glycidyl α-ethyl acrylate, glycidyl α-n-propyl acrylate, glycidyl α-n-butyl acrylate, and 3,4-acrylic acid. Epoxy butyl, 3,4-epoxy butyl methacrylate, 3,4-epoxy butyl α-ethyl acrylate, 6,7-epoxy heptyl acrylate, 6,7-epoxy heptyl methacrylate, α-ethyl acrylate 6,7 -Epoxyheptyl, β-methylglycidyl acrylate, β-methylglycidyl methacrylate, β-ethylglycidyl acrylate, β-ethylglycidyl methacrylate, β-n-propyl glycidyl acrylate, β-n-propyl glycidyl methacrylate, 3,4-epoxycyclohexyl acrylate And carboxylic acid esters such as 3,4-epoxycyclohexyl methacrylate; ethers such as o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether.
Among these compounds (a2), glycidyl methacrylate, 6,7-epoxyheptyl methacrylate, β-methylglycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl Ether, p-vinylbenzylglycidyl ether and the like are preferable from the viewpoint of increasing the copolymerization reactivity and the strength of the obtained spacer.
The said compound (a2) can be used individually or in mixture of 2 or more types.
〔A〕共重合体において、化合物(a2)から誘導される構成単位の含有率は、好ましくは10〜70重量%、さらに好ましくは20〜60重量%である。この場合、該構成単位の含有率が10重量%未満であると、得られるスペーサーの圧縮強度、耐熱性や耐薬品性が低下する傾向があり、一方70重量%を超えると、感放射線性樹脂組成物の保存安定性が低下する傾向がある。 [A] In the copolymer, the content of the structural unit derived from the compound (a2) is preferably 10 to 70% by weight, more preferably 20 to 60% by weight. In this case, if the content of the structural unit is less than 10% by weight, the compressive strength, heat resistance and chemical resistance of the resulting spacer tend to decrease, whereas if it exceeds 70% by weight, the radiation-sensitive resin. The storage stability of the composition tends to decrease.
また、化合物(a3)としては、例えば、
メチルアクリレート、エチルアクリレート、n−プロピルアクリレート、i−プロピルアクリレート、n−ブチルアクリレート、i−ブチルアクリレート、sec−ブチルアクリレート、t−ブチルアクリレート等のアクリル酸アルキルエステル類;メチルメタクリレート、エチルメタクリレート、n−プロピルメタクリレート、i−プロピルメタクリレート、n−ブチルメタクリレート、i−ブチルメタクリレート、sec−ブチルメタクリレート、t−ブチルメタクリレート等のメタクリル酸アルキルエステル類;シクロヘキシルアクリレート、2−メチルシクロヘキシルアクリレート、トリシクロ[5.2.1.02,6 ]デカン−8−イルアクリレート(以下、「トリシクロ[5.2.1.02,6 ]デカン−8−イル」を「ジシクロペンタニル」という。)、2−ジシクロペンタニルオキシエチルアクリレート、イソボロニルアクリレート、テトラヒドロフリルアクリレート等のアクリル酸の脂環族エステル類;シクロヘキシルメタクリレート、2−メチルシクロヘキシルメタクリレート、ジシクロペンタニルメタクリレート、2−ジシクロペンタニルオキシエチルメタクリレート、イソボロニルメタクリレート、テトラヒドロフリルメタクリレート等のメタクリル酸の脂環族エステル類;フェニルアクリレート、ベンジルアクリレート等のアクリル酸アリールエステル類;フェニルメタクリレート、ベンジルメタクリレート等のメタクリル酸アリールエステル類;
Moreover, as a compound (a3), for example,
Acrylic acid alkyl esters such as methyl acrylate, ethyl acrylate, n-propyl acrylate, i-propyl acrylate, n-butyl acrylate, i-butyl acrylate, sec-butyl acrylate, t-butyl acrylate; methyl methacrylate, ethyl methacrylate, n Methacrylic acid alkyl esters such as propyl methacrylate, i-propyl methacrylate, n-butyl methacrylate, i-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate; cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tricyclo [5.2 .1.0 2,6] decan-8-yl acrylate (hereinafter, the "tricyclo [5.2.1.0 2,6] decan-8-yl,""Jishikuropen Tanyl "), alicyclic esters of acrylic acid such as 2-dicyclopentanyloxyethyl acrylate, isobornyl acrylate, tetrahydrofuryl acrylate; cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopentanyl methacrylate, Alicyclic esters of methacrylic acid such as 2-dicyclopentanyloxyethyl methacrylate, isobornyl methacrylate, and tetrahydrofuryl methacrylate; Aryl esters such as phenyl acrylate and benzyl acrylate; Methacryl such as phenyl methacrylate and benzyl methacrylate Acid aryl esters;
マレイン酸ジエチル、フマル酸ジエチル、イタコン酸ジエチル等のジカルボン酸ジエステル類;2−ヒドロキシエチルアクリレート、2−ヒドロキシプロピルアクリレート等のアクリル酸ヒドロキシアルキルエステル類;2−ヒドロキシエチルメタクリレート、2−ヒドロキシプロピルメタクリレート等のメタクリル酸ヒドロキシアルキルエステル類;スチレン、α−メチルスチレン、m−メチルスチレン、p−メチルスチレン、p−メトキシスチレン等の芳香族ビニル化合物や、アクリロニトリル、メタクリロニトリル、塩化ビニル、塩化ビニリデン、アクリルアミド、メタクリルアミド、酢酸ビニル、1,3−ブタジエン、イソプレン、2,3−ジメチル−1,3−ブタジエン、N−シクロヘキシルマレイミド、N−フェニルマレイミド、N−ベンジルマレイミド、N−スクシンイミジル−3−マレイミドベンゾエート、N−スクシンイミジル−4−マレイミドブチレート、N−スクシンイミジル−6−マレイミドカプロエート、N−スクシンイミジル−3−マレイミドプロピオネート、N−(9−アクリジニル)マレイミド
等を挙げることができる。
Dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate and diethyl itaconate; hydroxyalkyl esters of acrylic acid such as 2-hydroxyethyl acrylate and 2-hydroxypropyl acrylate; 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate and the like Methacrylic acid hydroxyalkyl esters; aromatic vinyl compounds such as styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, p-methoxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide , Methacrylamide, vinyl acetate, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, N-cyclohexylmaleimide, N-phenylmaleimide N-benzylmaleimide, N-succinimidyl-3-maleimidobenzoate, N-succinimidyl-4-maleimidobutyrate, N-succinimidyl-6-maleimidocaproate, N-succinimidyl-3-maleimidopropionate, N- (9 -Acridinyl) maleimide and the like.
これらの化合物(a3)のうち、2−メチルシクロヘキシルアクリレート、t−ブチルメタクリレート、ジシクロペンタニルメタクリレート、テトラヒドロフリルメタクリレート、スチレン、p−メトキシスチレン、1,3−ブタジエン等が、共重合反応性の点から好ましい。
前記化合物(a3)は、単独でまたは2種以上を混合して使用することができる。
〔A〕共重合体において、化合物(a3)から誘導される構成単位の含有率は、好ましくは10〜80重量%、さらに好ましくは20〜60重量%である。この場合、該構成単位の含有率が10重量%未満であると、感放射線性樹脂組成物の保存安定性が低下するおそれがあり、一方80重量%を超えると、現像性が低下するおそれがある。
Among these compounds (a3), 2-methylcyclohexyl acrylate, t-butyl methacrylate, dicyclopentanyl methacrylate, tetrahydrofuryl methacrylate, styrene, p-methoxystyrene, 1,3-butadiene and the like are copolymerizable. It is preferable from the point.
The said compound (a3) can be used individually or in mixture of 2 or more types.
[A] In the copolymer, the content of the structural unit derived from the compound (a3) is preferably 10 to 80% by weight, more preferably 20 to 60% by weight. In this case, if the content of the structural unit is less than 10% by weight, the storage stability of the radiation-sensitive resin composition may be lowered, whereas if it exceeds 80% by weight, the developability may be lowered. is there.
〔A〕共重合体のゲルパーミエーションクロマトグラフィ(GPC)によるポリスチレン換算重量平均分子量(以下、「Mw」という。)は、通常、2×103 〜5×105 、好ましくは5×103 〜1×105 である。この場合、〔A〕共重合体のMwが2×
103 未満であると、得られるスペーサーの圧縮強度や耐熱性が低下する傾向があり、一方5×105 を超えると、現像性が低下する傾向がある。
本発明において、〔A〕共重合体は、単独でまたは2種以上を混合して使用することができる。
[A] The polystyrene-reduced weight average molecular weight (hereinafter referred to as “Mw”) by gel permeation chromatography (GPC) of the copolymer is usually 2 × 10 3 to 5 × 10 5 , preferably 5 × 10 3 to 1 × 10 5 . In this case, the Mw of the [A] copolymer is 2 ×
If it is less than 10 3 , the compressive strength and heat resistance of the resulting spacer tend to decrease, while if it exceeds 5 × 10 5 , developability tends to decrease.
In the present invention, the [A] copolymer can be used alone or in admixture of two or more.
〔A〕共重合体は、化合物(a1)、化合物(a2)および化合物(a3)を、例えば、溶媒中、重合開始剤の存在下にラジカル重合することによって製造することができる。 〔A〕共重合体の製造に用いられる溶媒としては、例えば、
メタノール、エタノール、n−プロパノール、i−プロパノール、ベンジルアルコール、2−フェニルエタノール、3−フェニル−1−プロパノール等のアルコール類;
テトラヒドロフラン、ジオキサン等のエーテル類;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノ−n−プロピルエーテル、エチレングリコールモノ−n−ブチルエーテル等のエチレングリコールモノアルキルエーテル類;
エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテル、エチレングリコールモノ−n−プロピルエーテルアセテート、エチレングリコールモノ−n−ブチルエーテルアセテート等のエチレングリコールモノアルキルエーテルアセテート類;
ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート等のジエチレングリコールモノアルキルエーテルアセテート類;
エチレングリコールモノメチルエーテルプロピオネート、エチレングリコールモノエチルエーテルプロピオネート、エチレングリコールモノ−n−プロピルエーテルプロピオネート、エチレングリコールモノ−n−ブチルエーテルプロピオネート等のエチレングリコールモノアルキルエーテルプロピオネート類;
ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールエチルメチルエーテル等のジエチレングリコールアルキルエーテル類;
[A] The copolymer can be produced by radical polymerization of the compound (a1), the compound (a2) and the compound (a3) in a solvent in the presence of a polymerization initiator, for example. [A] As a solvent used in the production of the copolymer, for example,
Alcohols such as methanol, ethanol, n-propanol, i-propanol, benzyl alcohol, 2-phenylethanol, 3-phenyl-1-propanol;
Ethers such as tetrahydrofuran and dioxane;
Ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether;
Ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether acetate, ethylene glycol mono-n-butyl ether acetate;
Diethylene glycol monoalkyl ether acetates such as diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate;
Ethylene glycol monoalkyl ether propionates such as ethylene glycol monomethyl ether propionate, ethylene glycol monoethyl ether propionate, ethylene glycol mono-n-propyl ether propionate, ethylene glycol mono-n-butyl ether propionate ;
Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether;
プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノ−n−プロピルエーテル、プロピレングリコールモノ−n−ブチルエーテル等のプロピレングリコールモノアルキルエーテル類;
プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノ−n−プロピルエーテルアセテート、プロピレングリコールモノ−n−ブチルエーテルアセテート等のプロピレングリコールモノアルキルエーテルアセテート類;
プロピレングリコールモノメチルエーテルプロピオネート、プロピレングリコールモノエチルエーテルプロピオネート、プロピレングリコールモノ−n−プロピルエーテルプロピオネート、プロピレングリコールモノ−n−ブチルエーテルプロピオネート等のプロピレングリコールモノアルキルエーテルプロピオネート類;
トルエン、キシレン等の芳香族炭化水素類;
メチルエチルケトン、2−ペンタノン、3−ペンタノン、シクロヘキサノン、4−ヒドロキシ−4−メチル−2−ペンタノン等のケトン類;
Propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether;
Propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono-n-butyl ether acetate;
Propylene glycol monoalkyl ether propionate, propylene glycol monoethyl ether propionate, propylene glycol mono-n-propyl ether propionate, propylene glycol monoalkyl ether propionate such as propylene glycol mono-n-butyl ether propionate ;
Aromatic hydrocarbons such as toluene and xylene;
Ketones such as methyl ethyl ketone, 2-pentanone, 3-pentanone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone;
2−メトキシプロピオン酸メチル、2−メトキシプロピオン酸エチル、2−メトキシプロピオン酸n−プロピル、2−メトキシプロピオン酸n−ブチル、2−エトキシプロピオン酸メチル、2−エトキシプロピオン酸エチル、2−エトキシプロピオン酸n−プロピル、2−エトキシプロピオン酸n−ブチル、2−n−プロポキシプロピオン酸メチル、2−n−プロポキシプロピオン酸エチル、2−n−プロポキシプロピオン酸n−プロピル、2−n−プロポキシプロピオン酸n−ブチル、2−n−ブトキシプロピオン酸メチル、2−n−ブトキシプロピオン酸エチル、2−n−ブトキシプロピオン酸n−プロピル、2−n−ブトキシプロピオン酸n−ブチル、3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチル、3−メトキシプロピオン酸n−プロピル、3−メトキシプロピオン酸n−ブチル、3−エトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、3−エトキシプロピオン酸n−プロピル、3−エトキシプロピオン酸n−ブチル、3−n−プロポキシプロピオン酸メチル、3−n−プロポキシプロピオン酸エチル、3−n−プロポキシプロピオン酸n−プロピル、3−n−プロポキシプロピオン酸n−ブチル、3−n−ブトキシプロピオン酸メチル、3−n−ブトキシプロピオン酸エチル、3−n−ブトキシプロピオン酸n−プロピル、3−n−ブトキシプロピオン酸n−ブチル等のアルコキシプロピオン酸アルキル類; Methyl 2-methoxypropionate, ethyl 2-methoxypropionate, n-propyl 2-methoxypropionate, n-butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, 2-ethoxypropion N-propyl acid, n-butyl 2-ethoxypropionate, methyl 2-n-propoxypropionate, ethyl 2-n-propoxypropionate, n-propyl 2-n-propoxypropionate, 2-n-propoxypropionic acid n-butyl, methyl 2-n-butoxypropionate, ethyl 2-n-butoxypropionate, n-propyl 2-n-butoxypropionate, n-butyl 2-n-butoxypropionate, methyl 3-methoxypropionate , Ethyl 3-methoxypropionate, 3-methoxy N-propyl propionate, n-butyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, n-propyl 3-ethoxypropionate, n-butyl 3-ethoxypropionate, 3-n -Methyl propoxypropionate, ethyl 3-n-propoxypropionate, n-propyl 3-n-propoxypropionate, n-butyl 3-n-propoxypropionate, methyl 3-n-butoxypropionate, 3-n- Alkyl alkoxypropionates such as ethyl butoxypropionate, n-propyl 3-n-butoxypropionate, n-butyl 3-n-butoxypropionate;
酢酸メチル、酢酸エチル、酢酸n−プロピル、酢酸n−ブチル、ヒドロキシ酢酸メチル、ヒドロキシ酢酸エチル、ヒドロキシ酢酸n−プロピル、ヒドロキシ酢酸n−ブチル、乳酸メチル、乳酸エチル、乳酸n−プロピル、乳酸n−ブチル、2−ヒドロキシ−2−メチルプロピオン酸メチル、2−ヒドロキシ−2−メチルプロピオン酸エチル、3−ヒドロキシプロピオン酸メチル、3−ヒドロキシプロピオン酸エチル、3−ヒドロキシプロピオン酸n−プロピル、3−ヒドロキシプロピオン酸n−ブチル、2−ヒドロキシ−3−メチルブタン酸メチル、メトキシ酢酸メチル、メトキシ酢酸エチル、メトキシ酢酸n−プロピル、メトキシ酢酸n−ブチル、エトキシ酢酸メチル、エトキシ酢酸エチル、エトキシ酢酸n−プロピル、エトキシ酢酸n−ブチル、n−プロポキシ酢酸メチル、n−プロポキシ酢酸エチル、n−プロポキシ酢酸n−プロピル、n−プロポキシ酢酸n−ブチル、n−ブトキシ酢酸メチル、n−ブトキシ酢酸エチル、n−ブトキシ酢酸n−プロピル、n−ブトキシ酢酸n−ブチル等の他のエステル類
等を挙げることができる。
Methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, methyl hydroxyacetate, ethyl hydroxyacetate, n-propyl hydroxyacetate, n-butyl hydroxyacetate, methyl lactate, ethyl lactate, n-propyl lactate, n-lactic acid Butyl, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, n-propyl 3-hydroxypropionate, 3-hydroxy N-butyl propionate, methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, n-propyl methoxyacetate, n-butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, n-propyl ethoxyacetate, Ethoxyacetic acid n- Chill, n-propoxyacetate methyl, n-propoxyacetate ethyl, n-propoxyacetate n-propyl, n-propoxyacetate n-butyl, n-butoxyacetate methyl, n-butoxyacetate, n-butoxyacetate n-propyl, Other esters such as n-butoxyacetate n-butyl can be mentioned.
これらの溶媒のうち、ジエチレングリコールアルキルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、アルコキシプロピオン酸アルキル類等が好ましい。
前記溶媒は、単独でまたは2種以上を混合して使用することができる。
Of these solvents, diethylene glycol alkyl ethers, propylene glycol monoalkyl ether acetates, alkyl alkoxypropionates and the like are preferable.
The said solvent can be used individually or in mixture of 2 or more types.
また、〔A〕共重合体の製造に用いられる重合開始剤としては、一般的にラジカル重合開始剤として知られているものが使用でき、例えば、2,2’−アゾビスイソブチロニトリル、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)、2,2’−アゾビス−(4−メトキシ−2,4−ジメチルバレロニトリル)、4,4’−アゾビス(4―シアノバレリアン酸)、ジメチル−2,2’−アゾビス(2−メチルプロピオネート)、2,2’−アゾビス(4−メトキシ−2,4−ジメチルバレロニトリル)等のアゾ化合物;ベンゾイルペルオキシド、ラウロイルペルオキシド、t−ブチルペルオキシピバレート、1,1’−ビス−(t−ブチルペルオキシ)シクロヘキサン等の有機過酸化物;過酸化水素等を挙げることができる。ラジカル重合開始剤として過酸化物を用いる場合には、還元剤を併用してレドックス型開始剤としてもよい。
これらのラジカル重合開始剤は、単独でまたは2種以上を混合して使用することができる。
[A] As the polymerization initiator used in the production of the copolymer, those generally known as radical polymerization initiators can be used, for example, 2,2′-azobisisobutyronitrile, 2,2'-azobis- (2,4-dimethylvaleronitrile), 2,2'-azobis- (4-methoxy-2,4-dimethylvaleronitrile), 4,4'-azobis (4-cyanovaleric acid ), Dimethyl-2,2′-azobis (2-methylpropionate), 2,2′-azobis (4-methoxy-2,4-dimethylvaleronitrile); benzoyl peroxide, lauroyl peroxide, t -Organic peroxides such as butylperoxypivalate and 1,1'-bis- (t-butylperoxy) cyclohexane; hydrogen peroxide and the like. When a peroxide is used as the radical polymerization initiator, a redox initiator may be used in combination with a reducing agent.
These radical polymerization initiators can be used alone or in admixture of two or more.
−〔B〕重合性不飽和化合物−
本発明の感放射線性樹脂組成物における重合性不飽和化合物としては、2官能以上のアクリル酸エステル類およびメタクリル酸エステル類(以下、これらをまとめて「(メタ)アクリル酸エステル類」という。)が好ましい。
2官能の(メタ)アクリル酸エステル類としては、例えば、エチレングリコールアクリレート、エチレングリコールメタクリレート、1,6−ヘキサンジオールジアクリレート、1,6−ヘキサンジオールジメタクリレート、1,9−ノナンジオールジアクリレート、1,9−ノナンジオールジメタクリレート、テトラエチレングリコールジアクリレート、テトラエチレングリコールジメタクリレート、ポリプロピレングリコールジアクリレート、ポリプロピレングリコールジメタクリレート、ビスフェノキシエタノールフルオレンジアクリレート、ビスフェノキシエタノールフルオレンジメタクリレート等を挙げることができる。
-[B] polymerizable unsaturated compound-
Examples of the polymerizable unsaturated compound in the radiation-sensitive resin composition of the present invention include bifunctional or higher acrylic esters and methacrylic esters (hereinafter collectively referred to as “(meth) acrylic esters”). Is preferred.
Examples of the bifunctional (meth) acrylic acid esters include ethylene glycol acrylate, ethylene glycol methacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, 1,9-nonanediol diacrylate, Examples include 1,9-nonanediol dimethacrylate, tetraethylene glycol diacrylate, tetraethylene glycol dimethacrylate, polypropylene glycol diacrylate, polypropylene glycol dimethacrylate, bisphenoxyethanol full orange acrylate, and bisphenoxyethanol full orange methacrylate.
また、2官能の(メタ)アクリル酸エステル類の市販品としては、例えば、アロニックスM−210、同M−240、同M−6200(以上、東亞合成(株)製)、KAYARAD HDDA、KAYARAD HX−220、同 R−604、同 UX−2201、同 UX−2301、同 UX−3204、同 UX−3301、同 UX−4101、同 UX−6101、同 UX−7101、同 UX−8101、同 MU―2100、同 MU−4001(以上、日本化薬(株)製)、ビスコート260、同312、同335HP(以上、大阪有機化学工業(株)製)等を挙げることができる。 Moreover, as a commercial item of bifunctional (meth) acrylic acid esters, for example, Aronix M-210, M-240, M-6200 (above, manufactured by Toagosei Co., Ltd.), KAYARAD HDDA, KAYARAD HX -220, R-604, same UX-2201, same UX-2301, same UX-3204, same UX-3301, same UX-4101, same UX-6101, same UX-7101, same UX-8101, same MU -2100, MU-4001 (above, manufactured by Nippon Kayaku Co., Ltd.), Biscoat 260, 312 and 335HP (above, manufactured by Osaka Organic Chemical Industry Co., Ltd.).
3官能以上の(メタ)アクリル酸エステル類としては、例えば、トリメチロールプロパントリアクリレート、トリメチロールプロパントリメタクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールトリメタクリレート、ペンタエリスリトールテトラアクリレート、ペンタエリスリトールテトラメタクリレート、ジペンタエリスリトールペンタアクリレート、ジペンタエリスリトールペンタメタクリレート、ジペンタエリスリトールヘキサアクリレート、ジペンタエリスリトールヘキサメタクリレート、トリ(2−アクリロイロキシエチル)フォスフェート、トリ(2−メタクリロイロキシエチル)フォスフェートや、9官能以上の(メタ)アクリル酸エステル類として、直鎖アルキレン基および脂環式構造を有し、かつ2個以上のイソシアネート基を有する化合物と、分子内に1個以上の水酸基を有し、かつ3個、4個あるいは5個のアクリロイロキシ基および/またはメタクリロイロキシ基を有する化合物とを反応させて得られるウレタンアクリレート系化合物等を挙げることができる。 Examples of the tri- or more functional (meth) acrylic acid esters include trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, pentaerythritol tetraacrylate, pentaerythritol tetramethacrylate, dipenta Erythritol pentaacrylate, dipentaerythritol pentamethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, tri (2-acryloyloxyethyl) phosphate, tri (2-methacryloyloxyethyl) phosphate, and more than 9 functional groups (Meth) acrylic acid esters having a linear alkylene group and an alicyclic structure, Reacting a compound having two or more isocyanate groups with a compound having one or more hydroxyl groups in the molecule and having three, four or five acryloyloxy groups and / or methacryloyloxy groups; The urethane acrylate type compound obtained etc. can be mentioned.
また、3官能以上の(メタ)アクリル酸エステル類の市販品としては、例えば、アロニックスM−309、同M−400、同M−402、同M−405、同M−450、同M−1310、同M−1600、同M−1960、同M−7100、同M−8030、同M−8060、同M−8100、同M−8530、同M−8560、同M−9050、アロニックスTO−1450(以上、東亞合成(株)製)、KAYARAD TMPTA、同 DPHA、同 DPCA−20、同 DPCA−30、同 DPCA−60、同 DPCA−120、同 MAX−3510(以上、日本化薬(株)製)、ビスコート295、同300、同360、同GPT、同3PA、同400(以上、大阪有機化学工業(株)製)や、ウレタンアクリレート系化合物を含有する市販品として、ニューフロンティア R−1150(第一工業製薬(株)製)、KAYARAD DPHA−40H(日本化薬(株)製)等を挙げることができる。
本発明において、重合性不飽和化合物は、単独でまたは2種以上を混合して使用することができる。
Moreover, as a commercial item of trifunctional or more (meth) acrylic acid esters, for example, Aronix M-309, M-400, M-402, M-405, M-450, M-1310 M-1600, M-1960, M-7100, M-8030, M-8060, M-8100, M-8100, M-8530, M-8560, M-9050, Aronix TO-1450 (Above, manufactured by Toagosei Co., Ltd.), KAYARAD TMPTA, DPHA, DPCA-20, DPCA-30, DPCA-60, DPCA-120, MAX-3510 (above, Nippon Kayaku Co., Ltd.) Manufactured), Biscoat 295, 300, 360, GPT, 3PA, 400 (above, manufactured by Osaka Organic Chemical Industry Co., Ltd.) and urethane acrylate compounds Examples of commercially available products include New Frontier R-1150 (manufactured by Daiichi Kogyo Seiyaku Co., Ltd.), KAYARAD DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), and the like.
In this invention, a polymerizable unsaturated compound can be used individually or in mixture of 2 or more types.
本発明の感放射線性樹脂組成物において、重合性不飽和化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは30〜200重量部、さらに好ましくは50〜140重量部である。この場合、重合性不飽和化合物の使用量が30重量部未満であると、得られるスペーサーの膜べりや強度の低下を生じやすくなる傾向があり、一方200重量部を超えると、得られるスペーサーの密着性が不足するおそれがある。 In the radiation-sensitive resin composition of the present invention, the amount of the polymerizable unsaturated compound used is preferably 30 to 200 parts by weight, more preferably 50 to 140 parts by weight with respect to 100 parts by weight of the [A] copolymer. It is. In this case, if the amount of the polymerizable unsaturated compound used is less than 30 parts by weight, the resulting spacer tends to be thin and the strength tends to decrease. On the other hand, if it exceeds 200 parts by weight, Adhesion may be insufficient.
−〔C〕感放射線性重合開始剤−
本発明の感放射線性樹脂組成物における感放射線性重合開始剤は、前記一般式(1)で表される化合物(以下、「化合物(1)」という。)を必須成分とするものである。
-[C] Radiation sensitive polymerization initiator-
The radiation-sensitive polymerization initiator in the radiation-sensitive resin composition of the present invention comprises a compound represented by the general formula (1) (hereinafter referred to as “compound (1)”) as an essential component.
一般式(1)において、R1 、R2 、R3 、R4 、R5 、R6 、R7 およびR8 の炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基としては、例えば、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、i−ブチル基、sec−ブチル基、t−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基、n−ノニル基、n−デシル基、n−ウンデシル基、n−ドデシル基、シクロペンチル基、シクロヘキシル基等を挙げることができる。 In the general formula (1), R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 having 1 to 12 carbon atoms as a linear, branched or cyclic alkyl group For example, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n -Heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, cyclopentyl group, cyclohexyl group and the like can be mentioned.
また、R4 、R5 、R6 、R7 およびR8 のハロゲン原子としては、例えば、フッ素原子、塩素原子、臭素原子等を挙げることができる。
また、R4 、R5 、R6 、R7 およびR8 の炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基としては、例えば、メトキシ基、エトキシ基、n−プロポキシ基、i−プロポキシ基、n−ブトキシ基、i−ブトキシ基、sec−ブトキシ基、t−ブトキシ基等を挙げることができる。
As the halogen atom of R 4, R 5, R 6 , R 7 and R 8, for example, a fluorine atom, a chlorine atom, may be mentioned bromine atom.
Examples of the linear or branched alkoxyl group having 1 to 4 carbon atoms of R 4 , R 5 , R 6 , R 7 and R 8 include, for example, a methoxy group, an ethoxy group, an n-propoxy group, i- A propoxy group, n-butoxy group, i-butoxy group, sec-butoxy group, t-butoxy group and the like can be mentioned.
また、R6 の水酸基および炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基の群から選ばれる置換基で置換された炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基において、炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基としては、例えば、前記R4 、R5 、R6 、R7 およびR8 の炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基について例示した基と同様のものを挙げることができる。
R6 の置換された炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基に対する置換基としては、例えば、水酸基、メトキシ基等が好ましい。
R6 の置換される炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基としては、例えば、前記R1 、R2 、R3 、R4 、R5 、R6 、R7 およびR8 の炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基について例示した基と同様のものを挙げることができる。
R6 の置換された炭素数1〜12の直鎖状、分岐状もしくは環状のアルキル基において、置換基は1種以上あるいは1個以上存在することができる。
In addition, a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms substituted with a substituent selected from the group consisting of a hydroxyl group of R 6 and a linear or branched alkoxyl group having 1 to 4 carbon atoms. In the above, the linear or branched alkoxyl group having 1 to 4 carbon atoms is, for example, a linear or branched chain having 1 to 4 carbon atoms of R 4 , R 5 , R 6 , R 7 and R 8. The thing similar to the group illustrated about the alkoxyl group of can be mentioned.
As the substituent for the substituted, straight-chain, branched or cyclic alkyl group having 1 to 12 carbon atoms of R 6 , for example, a hydroxyl group, a methoxy group and the like are preferable.
Examples of the linear, branched or cyclic alkyl group having 1 to 12 carbon atoms to be substituted for R 6 include R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and the like. Examples thereof include the same groups as those exemplified for the linear, branched or cyclic alkyl group having 1 to 12 carbon atoms of R 8 .
In the substituted, straight chain, branched or cyclic alkyl group having 1 to 12 carbon atoms of R 6 , one or more substituents may be present.
また、R6 の水酸基および炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基の群から選ばれる置換基で置換された炭素数2〜4の直鎖状もしくは分岐状のアルコキシル基において、炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基としては、例えば、前記R4 、R5 、R6 、R7 およびR8 の炭素数1〜4の直鎖状もしくは分岐状のアルコキシル基について例示した基と同様のものを挙げることができる。
R6 の置換された炭素数2〜4の直鎖状もしくは分岐状のアルコキシル基に対する置換基としては、例えば、水酸基、メトキシ基等が好ましい。
R6 の置換される炭素数2〜4の直鎖状もしくは分岐状のアルコキシル基としては、例えば、エトキシ基、n−プロポキシ基、i−プロポキシ基、n−ブトキシ基、i−ブトキシ基、sec−ブトキシ基、t−ブトキシ基等を挙げることができる。
R6 の置換された炭素数2〜4の直鎖状もしくは分岐状のアルコキシル基において、置換基は1種以上あるいは1個以上存在することができる。
Further, in the linear or branched alkoxyl group having 2 to 4 carbon atoms substituted with a substituent selected from the group consisting of the hydroxyl group of R 6 and the linear or branched alkoxyl group having 1 to 4 carbon atoms, Examples of the linear or branched alkoxyl group having 1 to 4 carbon atoms include, for example, the above-mentioned R 4 , R 5 , R 6 , R 7 and R 8 linear or branched alkoxyl having 1 to 4 carbon atoms. The thing similar to the group illustrated about the group can be mentioned.
As the substituent for the substituted or straight-chain or branched alkoxyl group having 2 to 4 carbon atoms of R 6 , for example, a hydroxyl group, a methoxy group and the like are preferable.
Examples of the linear or branched alkoxyl group having 2 to 4 carbon atoms to be substituted for R 6 include ethoxy group, n-propoxy group, i-propoxy group, n-butoxy group, i-butoxy group, sec -Butoxy group, t-butoxy group and the like can be mentioned.
In the substituted or straight chain or branched alkoxyl group having 2 to 4 carbon atoms of R 6 , one or more substituents can be present.
一般式(1)において、R1 としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、i−ブチル基、sec−ブチル基、t−ブチル基、n−ペンチル基、n−ヘキシル基等が好ましい。
また、R2 およびR3 としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、i−ブチル基、sec−ブチル基、t−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基等が好ましい。
また、R4 、R5 、R7 およびR8 としては、水素原子、メチル基、エチル基等が好ましい。
In the general formula (1), R 1 is methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, t-butyl group, n- Pentyl group, n-hexyl group and the like are preferable.
R 2 and R 3 are methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, t-butyl group, n-pentyl group. N-hexyl group, n-heptyl group, n-octyl group and the like are preferable.
R 4 , R 5 , R 7 and R 8 are preferably a hydrogen atom, a methyl group, an ethyl group or the like.
さらに、R6 としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、i−ブチル基、sec−ブチル基、t−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基、n−デシル基、n−ドデシル基、ヒドロキシメチル基、2−ヒドロキシエチル基、メトキシメチル基、2−メトキシエチル基、メトキシ基、エトキシ基、n−プロポキシ基、i−プロポキシ基、n−ブトキシ基、ヒドロキシメトキシ基、2−ヒドロキシエトキシ基、メトキシメトキシ基、2−メトキシエトキシ基等が好ましい。 Furthermore, as R 6 , methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n- Hexyl, n-heptyl, n-octyl, n-decyl, n-dodecyl, hydroxymethyl, 2-hydroxyethyl, methoxymethyl, 2-methoxyethyl, methoxy, ethoxy, n -Propoxy group, i-propoxy group, n-butoxy group, hydroxymethoxy group, 2-hydroxyethoxy group, methoxymethoxy group, 2-methoxyethoxy group and the like are preferable.
本発明における好ましい化合物(1)の具体例としては、
2−(4−メチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−エチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−i−プロピルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−n−ブチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−i−ブチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−n−ドデシルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(3,4−ジメチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
Specific examples of preferred compound (1) in the present invention include
2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-ethylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-i-propylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-n-butylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-i-butylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-n-dodecylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (3,4-dimethylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2−(4−メトキシベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−エトキシベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−ヒドロキシメチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−〔4−(2−ヒドロキシエトキシ)ベンジル〕−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−〔4−(2−メトキシエトキシ)ベンジル〕−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−i−プロピルベンジル)−2−〔(n−ブチル)(メチル)アミノ〕−1−(4−モルフォリノフェニル)ブタン−1−オン、
2−(4−n−ブチルベンジル)−2−〔(n−ブチル)(メチル)アミノ〕−1−(4−モルフォリノフェニル)ブタン−1−オン、
2- (4-methoxybenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-ethoxybenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-hydroxymethylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- [4- (2-hydroxyethoxy) benzyl] -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- [4- (2-methoxyethoxy) benzyl] -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one,
2- (4-i-propylbenzyl) -2-[(n-butyl) (methyl) amino] -1- (4-morpholinophenyl) butan-1-one,
2- (4-n-butylbenzyl) -2-[(n-butyl) (methyl) amino] -1- (4-morpholinophenyl) butan-1-one,
2−(4−i−プロピルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ペンタン−1−オン、
2−(4−i−ブチルベンジル)−2−〔(n−ブチル)(メチル)アミノ)〕−1−(4−モルフォリノフェニル)ペンタン−1−オン、
2−(4−n−ブトキシベンジル)−2−〔(n−ブチル)(メチル)アミノ〕−1−(4−モルフォリノフェニル)ペンタン−1−オン、
2−(4−メチルベンジル)−2−〔ジ(n−オクチル)アミノ〕−1−(4−モルフォリノフェニル)ヘキサン−1−オン、
2−(4−n−ドデシルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)オクタン−1−オン
等を挙げることができる。
2- (4-i-propylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) pentan-1-one,
2- (4-i-butylbenzyl) -2-[(n-butyl) (methyl) amino)]-1- (4-morpholinophenyl) pentan-1-one,
2- (4-n-butoxybenzyl) -2-[(n-butyl) (methyl) amino] -1- (4-morpholinophenyl) pentan-1-one,
2- (4-methylbenzyl) -2- [di (n-octyl) amino] -1- (4-morpholinophenyl) hexane-1-one,
2- (4-n-dodecylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) octan-1-one and the like can be mentioned.
これらの化合物(1)のうち、特に、2−(4−メチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、2−(4−エチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、2−(4−i−プロピルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン等が好ましい。
化合物(1)は、溶剤に対する溶解性に優れ、未溶解物、析出物等の異物を生じることなく、しかも昇華による焼成炉やフォトマスク等の汚染を生じることなく、またパターンの欠落および欠損のない優れたスペーサーを形成することができる成分である。
本発明において、化合物(1)は、単独でまたは2種以上を混合して使用することができる。
Of these compounds (1), in particular, 2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one, 2- (4-ethylbenzyl) 2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one, 2- (4-i-propylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) Butan-1-one and the like are preferable.
Compound (1) is excellent in solubility in a solvent, does not cause foreign matters such as undissolved matter and precipitates, and does not cause contamination of a baking furnace or a photomask due to sublimation, and lack of pattern and defect. It is a component that can form an excellent spacer.
In this invention, a compound (1) can be used individually or in mixture of 2 or more types.
本発明の感放射線性樹脂組成物において、化合物(1)の使用量は、〔A〕共重合体100重量部に対して、好ましくは5〜50重量部、さらに好ましくは5〜30重量部である。この場合、化合物(1)の使用量が5重量部未満では、残膜率が低下する傾向があり、一方50重量部を超えると、未露光部のアルカリ現像液に対する溶解性が低下する傾向がある。 In the radiation sensitive resin composition of the present invention, the amount of the compound (1) used is preferably 5 to 50 parts by weight, more preferably 5 to 30 parts by weight with respect to 100 parts by weight of the [A] copolymer. is there. In this case, when the amount of the compound (1) used is less than 5 parts by weight, the residual film ratio tends to decrease. On the other hand, when it exceeds 50 parts by weight, the solubility of the unexposed part in the alkaline developer tends to decrease. is there.
また、本発明の感放射線性樹脂組成物においては、化合物(1)と共に、他の感放射線性重合開始剤を少なくとも1種併用することができる。
前記他の感放射線性重合開始剤としては、例えば、O−アシルオキシム型化合物、アセトフェノン系化合物、ビイミダゾール系化合物、ベンゾイン系化合物、ベンゾフェノン系化合物、α−ジケトン系化合物、多核キノン系化合物、キサントン系化合物、ホスフィン系化合物、トリアジン系化合物等を挙げることができる。
これらの他の感放射線性重合開始剤のうち、O−アシルオキシム型化合物、アセトフェノン系化合物、ビイミダゾール系化合物が好ましい。
In the radiation sensitive resin composition of the present invention, at least one other radiation sensitive polymerization initiator can be used in combination with the compound (1).
Examples of the other radiation-sensitive polymerization initiator include O-acyloxime type compounds, acetophenone compounds, biimidazole compounds, benzoin compounds, benzophenone compounds, α-diketone compounds, polynuclear quinone compounds, xanthones. Compounds, phosphine compounds, triazine compounds, and the like.
Of these other radiation-sensitive polymerization initiators, O-acyloxime compounds, acetophenone compounds, and biimidazole compounds are preferred.
前記O−アシルオキシム型化合物は、感度をさらに向上させる作用を有する成分である。
O−アシルオキシム型化合物の具体例としては、1−(9−エチル−6−ベンゾイル−9.H.−カルバゾール−3−イル)ノナン−1,2−ノナン−2−オキシム−O−ベンゾエート、1−(9−エチル−6−ベンゾイル−9.H.−カルバゾール−3−イル)ノナン−1,2−ノナン−2−オキシム−O−アセテート、1−(9−エチル−6−ベンゾイル−9.H.−カルバゾール−3−イル)ペンタン−1,2−ペンタン−2−オキシム−O−アセテート、1−(9−エチル−6−ベンゾイル−9.H.−カルバゾール−3−イル)オクタン−1−オンオキシム−O−アセテート、1−〔9−エチル−6−(2−メチルベンゾイル)−9.H.−カルバゾール−3−イル〕エタン−1−オンオキシム−O−ベンゾエート、1−〔9−エチル−6−(2−メチルベンゾイル)−9.H.−カルバゾール−3−イル〕エタン−1−オンオキシム−O−アセテート、1−〔9−エチル−6−(1,3,5−トリメチルベンゾイル)−9.H.−カルバゾール−3−イル〕エタン−1−オンオキシム−O−ベンゾエート、1−〔9−n−ブチル−6−(2−エチルベンゾイル)−9.H.−カルバゾール−3−イル〕エタン−1−オンオキシム−O−ベンゾエート、1,2−オクタジオン−1−〔4−(フェニルチオ)フェニル〕−2−(O−ベンゾイルオキシム)、1,2−ブタンジオン−1−〔4−(フェニルチオ)フェニル〕−2−(O−ベンゾイルオキシム)、1,2−ブタンジオン−1−〔4−(フェニルチオ)フェニル〕−2−(O−アセチルオキシム)、1,2−オクタジオン−1−〔4−(メチルチオ)フェニル〕−2−(O−ベンゾイルオキシム)、1,2−オクタジオン−1−〔4−(フェニルチオ)フェニル〕−2−〔O−(4―メチルベンゾイルオキシム)〕等を挙げることができる。
The O-acyloxime type compound is a component having an effect of further improving sensitivity.
Specific examples of the O-acyloxime type compound include 1- (9-ethyl-6-benzoyl-9.H.-carbazol-3-yl) nonane-1,2-nonane-2-oxime-O-benzoate, 1- (9-ethyl-6-benzoyl-9.H.-carbazol-3-yl) nonane-1,2-nonane-2-oxime-O-acetate, 1- (9-ethyl-6-benzoyl-9 .H.-carbazol-3-yl) pentane-1,2-pentane-2-oxime-O-acetate, 1- (9-ethyl-6-benzoyl-9.H.-carbazol-3-yl) octane- 1-one oxime-O-acetate, 1- [9-ethyl-6- (2-methylbenzoyl) -9. H. -Carbazol-3-yl] ethane-1-one oxime-O-benzoate, 1- [9-ethyl-6- (2-methylbenzoyl) -9. H. -Carbazol-3-yl] ethane-1-one oxime-O-acetate, 1- [9-ethyl-6- (1,3,5-trimethylbenzoyl) -9. H. -Carbazol-3-yl] ethane-1-one oxime-O-benzoate, 1- [9-n-butyl-6- (2-ethylbenzoyl) -9. H. -Carbazol-3-yl] ethane-1-oneoxime-O-benzoate, 1,2-octadion-1- [4- (phenylthio) phenyl] -2- (O-benzoyloxime), 1,2-butanedione-1 -[4- (phenylthio) phenyl] -2- (O-benzoyloxime), 1,2-butanedione-1- [4- (phenylthio) phenyl] -2- (O-acetyloxime), 1,2-octadione -1- [4- (methylthio) phenyl] -2- (O-benzoyloxime), 1,2-octadion-1- [4- (phenylthio) phenyl] -2- [O- (4-methylbenzoyloxime) And the like.
これらのO−アシルオキシム型化合物のうち、1−〔9−エチル−6−(2−メチルベンゾイル)−9.H.−カルバゾール−3−イル〕エタン−1−オンオキシム−O−アセテート、1,2−オクタジオン−1−〔4−(フェニルチオ)フェニル〕−2−(O−ベンゾイルオキシム)等が好ましい。
前記O−アシルオキシム型化合物は、単独でまたは2種以上を混合して使用することができる。
Of these O-acyloxime type compounds, 1- [9-ethyl-6- (2-methylbenzoyl) -9. H. -Carbazol-3-yl] ethane-1-one oxime-O-acetate, 1,2-octadion-1- [4- (phenylthio) phenyl] -2- (O-benzoyloxime) and the like are preferable.
The O-acyloxime type compounds can be used alone or in admixture of two or more.
O−アシルオキシム型化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは30重量部以下、さらに好ましくは20重量部以下である。この場合、O−アシルオキシム型化合物の使用量が30重量部を超えると、未露光部のアルカリ現像液に対する溶解性が低下する傾向があり、またO−アシルオキシム型化合物の昇華により、焼成炉やフォトマスク等を汚染するおそれが高くなる傾向がある。なお、O−アシルオキシム型化合物の使用量が5重量部未満であると、残膜率が低下するおそれがある。 The amount of the O-acyloxime compound used is preferably 30 parts by weight or less, more preferably 20 parts by weight or less with respect to 100 parts by weight of the [A] copolymer. In this case, if the amount of the O-acyl oxime type compound used exceeds 30 parts by weight, the solubility of the unexposed part in the alkaline developer tends to decrease, and the sublimation of the O-acyl oxime type compound causes a firing furnace. There is a tendency to increase the risk of contamination of the photomask and the photomask. In addition, there exists a possibility that a remaining film rate may fall that the usage-amount of an O-acyl oxime type compound is less than 5 weight part.
前記アセトフェノン系化合物は、形成されるスペーサーの形状を調節する作用を有する成分である。
アセトフェノン系化合物としては、例えば、α−ヒドロキシケトン系化合物、α−アミノケトン系化合物等を挙げることができる。
前記α−ヒドロキシケトン系化合物の具体例としては、1−フェニル−2−ヒドロキシ−2−メチルプロパン−1−オン、1−(4−i−プロピルフェニル)−2−ヒドロキシ−2−メチルプロパン−1−オン、4−(2−ヒドロキシエトキシ)フェニル−(2−ヒドロキシ−2−プロピル)ケトン、1−ヒドロキシシクロヘキシルフェニルケトン等を挙げることができ、前記α−アミノケトン系化合物の具体例としては、2−メチル−1−〔4−(メチルチオ)フェニル〕−2−モルフォリノプロパン−1−オン、2−ベンジル−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、1−(2−ブロモ−4−モルフォリノフェニル)−2−ベンジル−2−ジメチルアミノブタン−1−オン、2−(2−ブロモベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、2−(4−ブロモベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン等を挙げることができ、これら以外のアセトフェノン系化合物の具体例として、2,2−ジメトキシアセトフェノン、2,2−ジエトキシアセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン等を挙げることができる。
The acetophenone compound is a component having an action of adjusting the shape of the formed spacer.
Examples of acetophenone compounds include α-hydroxy ketone compounds and α-amino ketone compounds.
Specific examples of the α-hydroxyketone compound include 1-phenyl-2-hydroxy-2-methylpropan-1-one, 1- (4-i-propylphenyl) -2-hydroxy-2-methylpropane- 1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1-hydroxycyclohexyl phenyl ketone and the like can be mentioned, and specific examples of the α-aminoketone compound include: 2-Methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one 1- (2-bromo-4-morpholinophenyl) -2-benzyl-2-dimethylaminobutan-1-one, 2- (2-bromoben Dil) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one, 2- (4-bromobenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) Examples of acetophenone compounds other than these include 2,2-dimethoxyacetophenone, 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, and the like. Can be mentioned.
これらのアセトフェノン系化合物のうち、2−メチル−1−〔4−(メチルチオ)フェニル〕−2−モルフォリノプロパン−1−オン、2−ベンジル−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン、1−(2−ブロモ−4−モルフォリノフェニル)−2−ベンジル−2−ジメチルアミノブタン−1−オン、2−(4−ブロモベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン等が好ましい。
前記アセトフェノン系化合物は、単独でまたは2種以上を混合して使用することができる。
Among these acetophenone compounds, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2- (dimethylamino) -1- (4-morpho Linophenyl) butan-1-one, 1- (2-bromo-4-morpholinophenyl) -2-benzyl-2-dimethylaminobutan-1-one, 2- (4-bromobenzyl) -2- (dimethyl) Amino) -1- (4-morpholinophenyl) butan-1-one and the like are preferable.
The acetophenone compounds can be used alone or in admixture of two or more.
アセトフェノン系化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは30重量部以下、さらに好ましくは20重量部以下である。この場合、アセトフェノン系化合物の使用量が30重量部を超えると、アセトフェノン系化合物の昇華による焼成炉やフォトマスク等の汚染および液中異物の発生のおそれが高くなる傾向がある。なお、アセトフェノン系化合物の使用量が1重量部未満であると、現像時の残膜率が低下するおそれがある。 The amount of the acetophenone compound used is preferably 30 parts by weight or less, more preferably 20 parts by weight or less, based on 100 parts by weight of the [A] copolymer. In this case, if the amount of the acetophenone compound used exceeds 30 parts by weight, there is a tendency that contamination of the baking furnace, photomask, etc. due to sublimation of the acetophenone compound and generation of foreign matter in the liquid increase. If the amount of the acetophenone compound used is less than 1 part by weight, the remaining film ratio during development may be reduced.
前記ビイミダゾール系化合物は、形成されるスペーサーの形状を調節する作用を有し、また感度、解像度や基板への密着性をさらに向上させる作用も奏しうる成分である。
ビイミダゾール系化合物の具体例としては、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラキス(4−エトキシカルボニルフェニル)−1,2’−ビイミダゾール、2,2’−ビス(2−ブロモフェニル)−4,4’,5,5’−テトラキス(4−エトキシカルボニルフェニル)−1,2’−ビイミダゾール、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4,6−トリクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2−ブロモフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジブロモフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4,6−トリブロモフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール等を挙げることができる。
The biimidazole compound is a component that has an effect of adjusting the shape of the formed spacer and can further improve the sensitivity, resolution, and adhesion to the substrate.
Specific examples of the biimidazole compound include 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2 , 2′-bis (2-bromophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2,2′-bis (2-chlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4-dichlorophenyl) -4,4', 5,5'-tetraphenyl-1 2,2′-biimidazole, 2,2′-bis (2,4,6-trichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′- Bis (2-bromophenyl) -4,4 ′, 5,5′-tetraphenyl-1, '-Biimidazole, 2,2'-bis (2,4-dibromophenyl) -4,4', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2, 4,6-tribromophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole and the like.
これらのビイミダゾール系化合物のうち、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4,6−トリクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール等が好ましく、特2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾールが好ましい。
前記ビイミダゾール系化合物は、単独でまたは2種以上を混合して使用することができる。
Among these biimidazole compounds, 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2 , 4-dichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4,6-trichlorophenyl) -4,4 ′, 5 , 5′-tetraphenyl-1,2′-biimidazole and the like, and particularly 2,2′-bis (2,4-dichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2 ′ -Biimidazole is preferred.
The biimidazole compounds can be used alone or in admixture of two or more.
ビイミダゾール系化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは50重量部以下、さらに好ましくは35重量部以下である。この場合、ビイミダゾール系化合物の使用量が50重量部を超えると、液晶中への溶出物が増加して電圧保持率が低下しやすくなったり、ビイミダゾール系化合物の昇華により、焼成炉やフォトマスク等を汚染するおそれが高くなる傾向がある。なお、ビイミダゾール系化合物の使用量が0.1重量部未満であると、残膜率が低下するおそれがある。 The amount of the biimidazole compound used is preferably 50 parts by weight or less, more preferably 35 parts by weight or less with respect to 100 parts by weight of the [A] copolymer. In this case, if the amount of the biimidazole compound used exceeds 50 parts by weight, the amount of eluate in the liquid crystal increases and the voltage holding ratio tends to decrease. There is a tendency to increase the risk of contaminating the mask and the like. In addition, there exists a possibility that a residual film rate may fall that the usage-amount of a biimidazole type compound is less than 0.1 weight part.
本発明の感放射線性樹脂組成物において、感放射線性重合開始剤成分としてビイミダゾール系化合物を用いる場合、ビイミダゾール系化合物を増感する作用を有するジアルキルアミノ基含有化合物を併用することが好ましい。
このようなジアルキルアミノ基含有化合物としては、例えば、ジアルキルアミノ基含有ベンゾフェノン誘導体およびジアルキルアミノ基含有安息香酸エステル類が好ましく、より具体的には、例えば、4,4’−ビス(ジメチルアミノ)ベンゾフェノン、4,4’−ビス(ジエチルアミノ)ベンゾフェノン、p−ジメチルアミノ安息香酸エチル、p−ジエチルアミノ安息香酸エチル、p−ジメチルアミノ安息香酸i−アミル、p−ジエチルアミノ安息香酸i−アミル等を挙げることができる。
これらのジアルキルアミノ基含有化合物のうち、特に4,4’−ビス(ジエチルアミノ)ベンゾフェノンが好ましい。
前記ジアルキルアミノ基含有化合物は、単独でまたは2種類以上混合して使用することができる。
In the radiation-sensitive resin composition of the present invention, when a biimidazole compound is used as the radiation-sensitive polymerization initiator component, it is preferable to use a dialkylamino group-containing compound having an action of sensitizing the biimidazole compound.
As such a dialkylamino group-containing compound, for example, a dialkylamino group-containing benzophenone derivative and a dialkylamino group-containing benzoic acid ester are preferable, and more specifically, for example, 4,4′-bis (dimethylamino) benzophenone. 4,4′-bis (diethylamino) benzophenone, ethyl p-dimethylaminobenzoate, ethyl p-diethylaminobenzoate, i-amyl p-dimethylaminobenzoate, i-amyl p-diethylaminobenzoate, and the like. it can.
Of these dialkylamino group-containing compounds, 4,4′-bis (diethylamino) benzophenone is particularly preferable.
The said dialkylamino group containing compound can be used individually or in mixture of 2 or more types.
ビイミダゾール系化合物とジアルキルアミノ基含有化合物とを併用する場合、ジアルキルアミノ基含有化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは0.1〜50重量部、さらに好ましくは1〜20重量部である。この場合、ジアルキルアミノ基含有化合物の使用量が0.1重量部未満であると、得られるスペーサーの膜べりやスペーサーの形状不良を生じやすくなる傾向があり、一方50重量部を超えると、スペーサーの形状が損なわれたり、ジアルキルアミノ基含有化合物の昇華により、焼成炉やフォトマスク等を汚染したりするおそれが高くなる傾向がある。 When the biimidazole compound and the dialkylamino group-containing compound are used in combination, the amount of the dialkylamino group-containing compound is preferably 0.1 to 50 parts by weight, more preferably 100 to 50 parts by weight of the [A] copolymer. Preferably it is 1-20 weight part. In this case, if the amount of the dialkylamino group-containing compound used is less than 0.1 parts by weight, the resulting spacer tends to cause film slippage or poor shape of the spacer, while if it exceeds 50 parts by weight, the spacer There is a tendency that there is a high possibility that the shape of the above will be damaged or the baking furnace, the photomask or the like is contaminated due to sublimation of the dialkylamino group-containing compound.
さらに、本発明の感放射線性樹脂組成物において、感放射線性重合開始剤成分としてビイミダゾール系化合物とジアルキルアミノ基含有化合物とを併用する場合、ビイミダゾール系化合物に対して水素ラジカルを供与する作用を有するチオール系化合物を添加することが好ましい。ビイミダゾール系化合物は、ジアルキルアミノ基含有化合物によって増感されて開裂することにより、イミダゾールラジカルを発生するが、この場合、チオール系化合物が存在しないと、高いラジカル重合開始能が発現されず、得られるスペーサーの形状が逆テーパ状のような好ましくない形状となる場合が多い。しかし、ビイミダゾール系化合物とジアルキルアミノ基含有化合物とが共存する系に、チオール系化合物を添加することにより、イミダゾールラジカルに水素ラジカルが供与される結果、イミダゾールラジカルが中性のイミダゾールに変換されるとともに、重合開始能の高い硫黄ラジカルを有する成分が発生し、それによりスペーサーの形状をより好ましい順テーパ形状にすることができる。 Further, in the radiation-sensitive resin composition of the present invention, when a biimidazole compound and a dialkylamino group-containing compound are used in combination as a radiation-sensitive polymerization initiator component, an action of donating a hydrogen radical to the biimidazole compound It is preferable to add a thiol-based compound having Biimidazole compounds are sensitized by a dialkylamino group-containing compound and cleaved to generate imidazole radicals. In this case, if no thiol compound is present, high radical polymerization initiating ability is not expressed, and In many cases, the shape of the spacer to be formed becomes an unfavorable shape such as a reverse taper shape. However, by adding a thiol compound to a system in which a biimidazole compound and a dialkylamino group-containing compound coexist, a hydrogen radical is donated to the imidazole radical, so that the imidazole radical is converted to neutral imidazole. At the same time, a component having a sulfur radical having a high polymerization initiating ability is generated, whereby the spacer can have a more preferable forward tapered shape.
前記チオール系化合物としては、例えば、2−メルカプトベンゾチアゾール、2−メルカプトベンゾオキサゾール、2−メルカプトベンゾイミダゾール、2−メルカプト−5−メトキシベンゾチアゾール、2−メルカプト−5−メトキシベンゾイミダゾール等の芳香族系化合物;3−メルカプトプロピオン酸、3−メルカプトプロピオン酸メチル、3−メルカプトプロピオン酸エチル、3−メルカプトプロピオン酸オクチル等の脂肪族系モノチオール;3,6−ジオキサ−1,8−オクタンジチオール、ペンタエリストールテトラ(メルカプトアセテート)、ペンタエリストールテトラ(3−メルカプトプロピオネート)等の脂肪族ポリチオール系化合物等が挙げることができる。
これらのチオール系化合物は、単独でまたは2種以上を混合して使用することができる。
Examples of the thiol compound include aromatics such as 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, 2-mercaptobenzimidazole, 2-mercapto-5-methoxybenzothiazole, 2-mercapto-5-methoxybenzimidazole. Compounds: aliphatic monothiols such as 3-mercaptopropionic acid, methyl 3-mercaptopropionate, ethyl 3-mercaptopropionate, octyl 3-mercaptopropionate; 3,6-dioxa-1,8-octanedithiol, Aliphatic polythiol compounds such as pentaerythritol tetra (mercaptoacetate) and pentaerythritol tetra (3-mercaptopropionate) can be mentioned.
These thiol compounds can be used alone or in admixture of two or more.
ビイミダゾール系化合物、ジアルキルアミノ基含有化合物およびチオール系化合物を組み合わせて使用する場合、チオール系化合物の使用量は、〔A〕共重合体100重量部に対して、好ましくは0.1〜50重量部、さらに好ましくは1〜20重量部である。この場合、チオール系化合物の使用量が0.1重量部未満であると、得られるスペーサーの膜べりや形状不良を生じやすくなる傾向があり、一方50重量部を超えると、スペーサーの形状が損なわれたり、チオール系化合物の昇華により、焼成炉やフォトマスク等を汚染したりするおそれが高くなる傾向がある。 When a biimidazole compound, a dialkylamino group-containing compound and a thiol compound are used in combination, the amount of the thiol compound used is preferably 0.1 to 50 weights per 100 parts by weight of the [A] copolymer. Parts, more preferably 1 to 20 parts by weight. In this case, if the amount of the thiol-based compound used is less than 0.1 parts by weight, the resulting spacer tends to cause film slippage or poor shape, whereas if it exceeds 50 parts by weight, the shape of the spacer is impaired. Or the sublimation of the thiol compound tends to increase the risk of contaminating the baking furnace, the photomask, and the like.
本発明の感放射線性樹脂組成物において、他の感放射線性重合開始剤の使用割合は、全感放射線性重合開始剤100重量部に対して、好ましくは100重量部以下、さらに好ましくは80重量部以下、特に好ましくは60重量部以下である。この場合、他の感放射線性重合開始剤の使用割合が100重量部を超えると、本発明の所期の効果が損なわれるおそれがある。 In the radiation-sensitive resin composition of the present invention, the use ratio of the other radiation-sensitive polymerization initiator is preferably 100 parts by weight or less, more preferably 80 parts by weight with respect to 100 parts by weight of the total radiation-sensitive polymerization initiator. Part or less, particularly preferably 60 parts by weight or less. In this case, if the use ratio of the other radiation-sensitive polymerization initiator exceeds 100 parts by weight, the intended effect of the present invention may be impaired.
−任意添加剤−
本発明の感放射線性樹脂組成物には、必要に応じて、本発明の効果を損なわない範囲で、前記成分以外の任意添加剤、例えば、界面活性剤、接着助剤、保存安定剤、耐熱性向上剤等を配合することができる。
前記界面活性剤は、塗布性を向上するために配合される成分であり、フッ素系界面活性剤およびシリコーン系界面活性剤が好ましい。
前記フッ素系界面活性剤としては、末端、主鎖および側鎖の少なくともいずれかの部位にフルオロアルキルおよび/またはフルオロアルキレン基を有する化合物が好ましく、その例としては、1,1,2,2−テトラフロロ−n−オクチル(1,1,2,2−テトラフロロ−n−プロピル)エーテル、1,1,2,2−テトラフロロ−n−オクチル(n−ヘキシル)エーテル、オクタエチレングリコールジ(1,1,2,2−テトラフロロ−n−ブチル)エーテル、ヘキサエチレングリコール(1,1,2,2,3,3−ヘキサフロロ−n−ペンチル)エーテル、オクタプロピレングリコールジ(1,1,2,2−テトラフロロ−n−ブチル)エーテル、ヘキサプロピレングリコールジ(1,1,2,2,3,3−ヘキサフロロ−n−ペンチル)エーテル、1,1,2,2,3,3−ヘキサフロロ−n−デカン、1,1,2,2,8,8,9,9,10,10−デカフロロ−n−ドデカン、パーフロロ−n−ドデカンスルホン酸ナトリウムや、フロロアルキルベンゼンスルホン酸ナトリウム類、フロロアルキルホスホン酸ナトリウム類、フロロアルキルカルボン酸ナトリウム類、フロロアルキルポリオキシエチレンエーテル類、ジグリセリンテトラキス(フロロアルキルポリオキシエチレンエーテル)類、フロロアルキルアンモニウムヨージド類、フロロアルキルベタイン類、フロロアルキルポリオキシエチレンエーテル類、パーフロロアルキルポリオキシエタノール類、パーフルオロアルキルアルコキシレート類、フッ素系アルキルエステル等を挙げることができる。
-Optional additives-
In the radiation-sensitive resin composition of the present invention, optional additives other than the above components, for example, surfactants, adhesion assistants, storage stabilizers, heat resistance, as long as they do not impair the effects of the present invention. A property improver or the like can be blended.
The surfactant is a component blended to improve applicability, and a fluorosurfactant and a silicone surfactant are preferable.
The fluorine-based surfactant is preferably a compound having a fluoroalkyl and / or fluoroalkylene group in at least one of the terminal, main chain and side chain, and examples thereof include 1,1,2,2- Tetrafluoro-n-octyl (1,1,2,2-tetrafluoro-n-propyl) ether, 1,1,2,2-tetrafluoro-n-octyl (n-hexyl) ether, octaethylene glycol di (1,1 , 2,2-tetrafluoro-n-butyl) ether, hexaethylene glycol (1,1,2,2,3,3-hexafluoro-n-pentyl) ether, octapropylene glycol di (1,1,2,2- Tetrafluoro-n-butyl) ether, hexapropylene glycol di (1,1,2,2,3,3-hexafluoro-n-pent ) Ether, 1,1,2,2,3,3-hexafluoro-n-decane, 1,1,2,2,8,8,9,9,10,10-decafluoro-n-dodecane, perfluoro-n -Sodium dodecane sulfonate, sodium fluoroalkylbenzene sulfonates, sodium fluoroalkyl phosphonates, sodium fluoroalkyl carboxylates, fluoroalkyl polyoxyethylene ethers, diglycerin tetrakis (fluoroalkyl polyoxyethylene ethers), fluoro Examples thereof include alkylammonium iodides, fluoroalkylbetaines, fluoroalkylpolyoxyethylene ethers, perfluoroalkylpolyoxyethanols, perfluoroalkylalkoxylates, and fluorine-based alkyl esters.
また、フッ素系界面活性剤の市販品としては、例えば、BM−1000、BM−1100(以上、BM CHEMIE社製)、メガファックF142D、同F172、同F173、同F178、同F183、同F191、同F471、同F476(以上、大日本インキ化学工業(株)製)、フロラードFC 170C、同FC−171、同FC−430、同FC−431(以上、住友スリーエム(株)製)、サーフロンS−112、同S−113、同S−131、同S−141、同S−145、同S−382、同SC−101、同SC−102、同SC−103、同SC−104、同SC−105、同SC−106(以上、旭硝子(株)製)、エフトップEF301、同EF303、同EF352(以上、新秋田化成(株)製)、フタージェントFT−100、同FT−110、同FT−140A、同FT−150、同FT−250、同FT−251、同FT−300、同FT−310、同FT−400S、同FTX−218、同FTX−251(以上、(株)ネオス製)等を挙げることができる。 Examples of commercially available fluorosurfactants include BM-1000, BM-1100 (manufactured by BM CHEMIE), MegaFack F142D, F172, F173, F178, F183, F191, F191, F471, F476 (above, Dainippon Ink & Chemicals, Inc.), Florard FC 170C, FC-171, FC-430, FC-431 (above, Sumitomo 3M Limited), Surflon S -112, S-113, S-131, S-141, S-145, S-382, SC-101, SC-102, SC-103, SC-104, SC -105, SC-106 (above, manufactured by Asahi Glass Co., Ltd.), F-top EF301, EF303, EF352 (above, manufactured by Shin-Akita Kasei Co., Ltd.), Futagen FT-100, FT-110, FT-140A, FT-150, FT-250, FT-251, FT-300, FT-310, FT-400S, FTX-218, FTX-251 (above, manufactured by Neos Co., Ltd.) and the like.
前記シリコーン系界面活性剤としては、例えば、トーレシリコーンDC3PA、同DC7PA、同SH11PA、同SH21PA、同SH28PA、同SH29PA、同SH30PA、同SH−190、同SH−193、同SZ−6032、同SF−8428、同DC−57、同DC−190(以上、東レ・ダウコーニング・シリコーン(株)製)、TSF−4440、TSF−4300、TSF−4445、TSF−4446、TSF−4460、TSF−4452(以上、GE東芝シリコーン(株)製)等の商品名で市販されているものを挙げることができる。 Examples of the silicone-based surfactant include Torre Silicone DC3PA, DC7PA, SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH-190, SH-193, SZ-6032, SF -8428, DC-57, DC-190 (above, manufactured by Toray Dow Corning Silicone Co., Ltd.), TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4442 (The above-mentioned, GE Toshiba Silicone Co., Ltd. product) etc. can be mentioned what is marketed.
また、前記以外の界面活性剤としては、例えば、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類;ポリオキシエチレンn−オクチルフェニルエーテル、ポリオキシエチレンn−ノニルフェニルエーテル等のポリオキシエチレンアリールエーテル類;ポリオキシエチレンジラウレート、ポリオキシエチレンジステアレート等のポリオキシエチレンジアルキルエステル類等のノニオン系界面活性剤や、市販品として、KP341(信越化学工業(株)製)、ポリフローNo.57、同No.95(共栄社化学(株)製)等を挙げることができる。
これらの界面活性剤は、単独でまたは2種以上を混合して使用することができる。
Examples of surfactants other than the above include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether; polyoxyethylene n-octylphenyl ether, polyoxy Polyoxyethylene aryl ethers such as ethylene n-nonylphenyl ether; nonionic surfactants such as polyoxyethylene dialkyl esters such as polyoxyethylene dilaurate and polyoxyethylene distearate, and commercially available products such as KP341 (Shin-Etsu) Chemical Industry Co., Ltd.), Polyflow No. 57, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.).
These surfactants can be used alone or in admixture of two or more.
界面活性剤の配合量は、〔A〕共重合体100重量部に対して、好ましくは5重量部以下、さらに好ましくは2重量部以下である。この場合、界面活性剤の配合量が5重量部を超えると、塗布時に膜荒れが生じやすくなる傾向がある。 The compounding amount of the surfactant is preferably 5 parts by weight or less, and more preferably 2 parts by weight or less with respect to 100 parts by weight of the [A] copolymer. In this case, when the compounding amount of the surfactant exceeds 5 parts by weight, the film is liable to be roughened during the coating.
前記接着助剤は、基体との密着性をさらに向上させるために配合される成分である。
このような接着助剤としては、官能性シランカップリング剤が好ましく、その例としては、カルボキシル基、メタクリロイル基、ビニル基、イソシアネート基、エポキシ基等の反応性官能基を有するシランカップリング剤を挙げることができ、より具体的には、トリメトキシシリル安息香酸、γ−メタクリロイルオキシプロピルトリメトキシシラン、ビニルトリアセトキシシラン、ビニルトリメトキシシラン、γ−イソシアナートプロピルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン等を挙げることができる。
これらの接着助剤は、単独でまたは2種以上を混合して使用することができる。
The said adhesion assistant is a component mix | blended in order to improve the adhesiveness with a base | substrate further.
As such an adhesion assistant, a functional silane coupling agent is preferable. Examples thereof include a silane coupling agent having a reactive functional group such as a carboxyl group, a methacryloyl group, a vinyl group, an isocyanate group, and an epoxy group. More specifically, trimethoxysilylbenzoic acid, γ-methacryloyloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxy Examples thereof include propyltrimethoxysilane and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane.
These adhesion assistants can be used alone or in admixture of two or more.
接着助剤の配合量は、〔A〕共重合体100重量部に対して、好ましくは20重量部以下、さらに好ましくは10重量部以下である。この場合、接着助剤の配合量が20重量部を超えると、現像残りが生じやすくなる傾向がある。 The blending amount of the adhesion assistant is preferably 20 parts by weight or less, more preferably 10 parts by weight or less, with respect to 100 parts by weight of the [A] copolymer. In this case, when the blending amount of the adhesion assistant exceeds 20 parts by weight, there is a tendency that a development residue is likely to occur.
前記保存安定剤としては、例えば、硫黄、キノン類、ヒドロキノン類、ポリオキシ化合物、アミン類、ニトロニトロソ化合物等を挙げることができ、その例として、4−メトキシフェノール、N−ニトロソ−N−フェニルヒドロキシルアミンアルミニウム等を挙げることができる。
保存安定剤の使用量は、〔A〕共重合体100重量部に対して、好ましくは3.0重量部以下、さらに好ましくは0.5重量部以下である。この場合、保存安定剤の使用量が3.0重量部を超えると、感度が低下してスペーサーの形状が損なわれるおそれがある。
Examples of the storage stabilizer include sulfur, quinones, hydroquinones, polyoxy compounds, amines, nitronitroso compounds, etc., and examples thereof include 4-methoxyphenol, N-nitroso-N-phenylhydroxyl. An amine aluminum etc. can be mentioned.
The amount of the storage stabilizer used is preferably 3.0 parts by weight or less, more preferably 0.5 parts by weight or less, with respect to 100 parts by weight of the [A] copolymer. In this case, when the usage-amount of a storage stabilizer exceeds 3.0 weight part, there exists a possibility that a sensitivity may fall and the shape of a spacer may be impaired.
前記耐熱性向上剤としては、例えば、N−(アルコキシメチル)グリコールウリル化合物、N−(アルコキシメチル)メラミン化合物、2個以上のエポキシ基を有する化合物等を挙げることができる。
前記N−(アルコキシメチル)グリコールウリル化合物としては、例えば、N,N,N,N−テトラ(メトキシメチル)グリコールウリル、N,N,N,N−テトラ(エトキシメチル)グリコールウリル、N,N,N,N−テトラ(n−プロポキシメチル)グリコールウリル、N,N,N,N−テトラ(i−プロポキシメチル)グリコールウリル、N,N,N,N−テトラ(n−ブトキシメチル)グリコールウリル、N,N,N,N−テトラ(t−ブトキシメチル)グリコールウリル等を挙げることができる。
これらのN−(アルコキシメチル)グリコールウリル化合物のうち、N,N,N,N−テトラ(メトキシメチル)グリコールウリルが好ましい。
Examples of the heat resistance improver include N- (alkoxymethyl) glycoluril compounds, N- (alkoxymethyl) melamine compounds, compounds having two or more epoxy groups, and the like.
Examples of the N- (alkoxymethyl) glycoluril compound include N, N, N, N-tetra (methoxymethyl) glycoluril, N, N, N, N-tetra (ethoxymethyl) glycoluril, N, N , N, N-tetra (n-propoxymethyl) glycoluril, N, N, N, N-tetra (i-propoxymethyl) glycoluril, N, N, N, N-tetra (n-butoxymethyl) glycoluril , N, N, N, N-tetra (t-butoxymethyl) glycoluril and the like.
Of these N- (alkoxymethyl) glycoluril compounds, N, N, N, N-tetra (methoxymethyl) glycoluril is preferred.
前記N−(アルコキシメチル)メラミン化合物としては、例えば、N,N,N,N,N,N−ヘキサ(メトキシメチル)メラミン、N,N,N,N,N,N−ヘキサ(エトキシメチル)メラミン、N,N,N,N,N,N−ヘキサ(n−プロポキシメチル)メラミン、N,N,N,N,N,N−ヘキサ(i−プロポキシメチル)メラミン、N,N,N,N,N,N−ヘキサ(n−ブトキシメチル)メラミン、N,N,N,N,N,N−ヘキサ(t−ブトキシメチル)メラミン等を挙げることができる。
これらのN−(アルコキシメチル)メラミン化合物のうち、N,N,N,N,N,N−ヘキサ(メトキシメチル)メラミンが好ましく、その市販品としては、例えば、ニカラックN−2702、同MW−30M(以上 三和ケミカル(株)製)等を挙げることができる。
Examples of the N- (alkoxymethyl) melamine compound include N, N, N, N, N, N-hexa (methoxymethyl) melamine, N, N, N, N, N, N-hexa (ethoxymethyl). Melamine, N, N, N, N, N, N-hexa (n-propoxymethyl) melamine, N, N, N, N, N, N-hexa (i-propoxymethyl) melamine, N, N, N, Examples thereof include N, N, N-hexa (n-butoxymethyl) melamine, N, N, N, N, N, N-hexa (t-butoxymethyl) melamine and the like.
Of these N- (alkoxymethyl) melamine compounds, N, N, N, N, N, N-hexa (methoxymethyl) melamine is preferred, and examples of commercially available products thereof include Nicalac N-2702 and MW- 30M (manufactured by Sanwa Chemical Co., Ltd.).
前記2個以上のエポキシ基を有する化合物としては、例えば、エチレングリコールジグリシジルエーテル、ジエチレングリコールジグリシジルエーテル、ポリエチレングリコールジグリシジルエーテル、プロピレングリコールジグリシジルエーテル、トリプロピレングリコールジグリシジルエーテル、ポリプロピレングリコールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,6−ヘキサンジオールジグリシジルエーテル、グリセリンジグリシジルエーテル、トリメチロールプロパントリグリシジルエーテル、水添ビスフェノールAジグリシジルエーテル、ビスフェノールAジグリシジルエーテル等を挙げることができる。
また、2個以上のエポキシ基を有する化合物の市販品としては、例えば、エポライト40E、同100E、同200E、同70P、同200P、同400P、同1500NP、同1600、同80MF、同100MF、同3002、同4000(以上、共栄社化学(株)製)等を挙げることができる。
これらの耐熱性向上剤は、単独でまたは2種以上を混合して使用することができる。
Examples of the compound having two or more epoxy groups include ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, and polypropylene glycol diglycidyl ether. And neopentyl glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, glycerin diglycidyl ether, trimethylolpropane triglycidyl ether, hydrogenated bisphenol A diglycidyl ether, bisphenol A diglycidyl ether, and the like.
Examples of commercially available compounds having two or more epoxy groups include Epolite 40E, 100E, 200E, 70P, 200P, 400P, 1500NP, 1600, 80MF, 100MF, 3002 and 4000 (above, manufactured by Kyoeisha Chemical Co., Ltd.).
These heat resistance improvers can be used alone or in admixture of two or more.
本発明の感放射線性樹脂組成物は、適当な溶剤に溶解した組成物溶液として使用に供するのが好ましい。
前記溶剤としては、感放射線性樹脂組成物を構成する各成分を均一に溶解し、各成分と反応せず、適度の揮発性を有するものが用いられる。
このような溶剤としては、例えば、〔A〕共重合体を製造する重合について例示した溶媒と同様のものを挙げることができる。
これらの溶剤のうち、各成分の溶解能、各成分との反応性および被膜形成の容易性の点から、アルコール類、エチレングリコールモノアルキルエーテルアセテート類、ジエチレングリコールモノアルキルエーテルアセテート類、ジエチレングリコールアルキルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、アルコキシプロピオン酸アルキル類等が好ましく、特に、ベンジルアルコール、2−フェニルエタノール、3−フェニル−1−プロパノール、エチレングリコールモノ−n−ブチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールエチルメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート等が好ましい。
前記溶剤は、単独でまたは2種以上を混合して使用することができる。
The radiation-sensitive resin composition of the present invention is preferably used as a composition solution dissolved in an appropriate solvent.
As the solvent, a solvent that dissolves each component constituting the radiation-sensitive resin composition uniformly, does not react with each component, and has appropriate volatility is used.
Examples of such a solvent include the same solvents as those exemplified for the polymerization for producing the [A] copolymer.
Among these solvents, alcohols, ethylene glycol monoalkyl ether acetates, diethylene glycol monoalkyl ether acetates, diethylene glycol alkyl ethers from the viewpoint of solubility of each component, reactivity with each component, and ease of film formation. , Propylene glycol monoalkyl ether acetates, alkyl alkoxypropionates and the like are preferable, and in particular, benzyl alcohol, 2-phenylethanol, 3-phenyl-1-propanol, ethylene glycol mono-n-butyl ether acetate, diethylene glycol monoethyl ether acetate , Diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, propylene glycol Monomethyl ether acetate, propylene glycol monoethyl ether acetate are preferred.
The said solvent can be used individually or in mixture of 2 or more types.
本発明においては、さらに、前記溶剤と共に高沸点溶剤を併用することもできる。
前記高沸点溶剤としては、例えば、N−メチルホルムアミド、N,N−ジメチルホルムアミド、N−メチルホルムアニリド、N−メチルアセトアミド、N,N−ジメチルアセトアミド、N−メチルピロリドン、ジメチルスルホキシド、ベンジルエチルエーテル、ジヘキシルエーテル、アセトニルアセトン、イソホロン、カプロン酸、カプリル酸、1−オクタノール、1−ノナノール、酢酸ベンジル、安息香酸エチル、シュウ酸ジエチル、マレイン酸ジエチル、γ−ブチロラクトン、炭酸エチレン、炭酸プロピレン、フェニルセロソルブアセテート等を挙げることができる。
これらの高沸点溶剤は、単独でまたは2種類以上を混合して使用することができる。
また、前記のように調製された組成物溶液は、孔径0.5μm程度のミリポアフィルタなどを用いてろ過して、使用に供することもできる。
In the present invention, a high boiling point solvent may be used in combination with the solvent.
Examples of the high boiling point solvent include N-methylformamide, N, N-dimethylformamide, N-methylformanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethylsulfoxide, and benzylethyl ether. , Dihexyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl Examples include cellosolve acetate.
These high-boiling solvents can be used alone or in admixture of two or more.
In addition, the composition solution prepared as described above can be used after being filtered using a Millipore filter having a pore size of about 0.5 μm.
スペーサーの形成方法
次に、本発明の感放射線性樹脂組成物を用いて本発明のスペーサーを形成する方法について説明する。
本発明のスペーサーを形成は、少なくとも下記(イ)〜(二)の工程を含むものである。
(イ)本発明の感放射線性樹脂組成物の被膜を基板上に形成する工程。
(ロ)該被膜の少なくとも一部に放射線を露光する工程。
(ハ)露光後の該被膜を現像する工程。
(ニ)現像後の該被膜を加熱する工程。
Method of forming spacers Next, a method of forming a spacer of the present invention will be described with reference to radiation-sensitive resin composition of the present invention.
The formation of the spacer of the present invention includes at least the following steps (a) to (2).
(A) A step of forming a film of the radiation sensitive resin composition of the present invention on a substrate.
(B) A step of exposing radiation to at least a part of the coating.
(C) A step of developing the film after exposure.
(D) A step of heating the coated film after development.
以下、これらの各工程について順次説明する。
−(イ)工程−
透明基板の一面に透明導電膜を形成し、該透明導電膜の上に、本発明の感放射線性樹脂組成物の組成物溶液を塗布したのち、塗布面を加熱(プレベーク)することにより、被膜を形成する。
スペーサーの形成に用いられる透明基板としては、例えば、ガラス基板、樹脂基板等を挙げることができ、より具体的には、ソーダライムガラス、無アルカリガラス等のガラス基板;ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエーテルスルホン、ポリカーボネート、ポリイミド等のプラスチックからなる樹脂基板を挙げることができる。
透明基板の一面に設けられる透明導電膜としては、酸化スズ(SnO2)からなるNESA膜(米国PPG社登録商標)、酸化インジウム−酸化スズ(In2 O3 −SnO2)からなるITO膜等を挙げることができる。
組成物溶液の塗布方法としては、例えば、スプレー塗布法、ロール塗布法、回転塗布法(スピンコート法)、スリットダイ塗布法、バー塗布法、インクジェット塗布法等の適宜の方法を採用することができるが、特に、スピンコート法、スリットダイ塗布法が好ましい。
また、プレベークの条件は、各成分の種類、配合割合などによっても異なるが、通常、70〜120℃で1〜15分程度である。
Hereinafter, each of these steps will be described sequentially.
-(I) Process-
A transparent conductive film is formed on one surface of a transparent substrate, the composition solution of the radiation-sensitive resin composition of the present invention is applied on the transparent conductive film, and then the coated surface is heated (prebaked) to form a coating film. Form.
Examples of the transparent substrate used for forming the spacer include a glass substrate and a resin substrate. More specifically, glass substrates such as soda lime glass and non-alkali glass; polyethylene terephthalate, polybutylene terephthalate, Examples thereof include a resin substrate made of a plastic such as polyethersulfone, polycarbonate, and polyimide.
Examples of the transparent conductive film provided on one surface of the transparent substrate include a NESA film (registered trademark of US PPG) made of tin oxide (SnO 2 ), an ITO film made of indium oxide-tin oxide (In 2 O 3 —SnO 2 ), etc. Can be mentioned.
As a coating method of the composition solution, for example, an appropriate method such as a spray coating method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, an ink jet coating method, or the like may be adopted. In particular, a spin coating method and a slit die coating method are preferable.
Moreover, although the conditions of prebaking differ also with the kind of each component, a mixture ratio, etc., it is normally about 1 to 15 minutes at 70-120 degreeC.
−(ロ)工程−
次いで、形成された被膜の少なくとも一部に放射線を露光する。この場合、被膜の一部に露光する際には、通常、所定のパターンを有するフォトマスクを介して露光する。
使用される放射線としては、可視光線、紫外線、遠紫外線、電子線、X線等を使用できるが、波長が190〜450nmの範囲にある放射線が好ましく、特に波長365nmの紫外線を含む放射線が好ましい。
露光量は、露光される放射線の波長365nmにおける強度を照度計(OAI model 356 、OAI Optical Associates Inc.製)により測定した値として、通常、100〜10,000J/m2 、好ましくは1、500〜3,000J/m2 である。
-(B) Process-
Next, radiation is exposed to at least a part of the formed film. In this case, when exposing a part of the film, the exposure is usually performed through a photomask having a predetermined pattern.
Visible rays, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, and the like can be used as the radiation used, but radiation having a wavelength in the range of 190 to 450 nm is preferable, and radiation including ultraviolet light having a wavelength of 365 nm is particularly preferable.
The exposure dose is usually 100 to 10,000 J / m 2 , preferably 1,500, as a value obtained by measuring the intensity of the exposed radiation at a wavelength of 365 nm with an illuminometer (OAI model 356, manufactured by OAI Optical Associates Inc.). ˜3,000 J / m 2 .
−(ハ)工程−
次いで、露光後の被膜を現像することにより、不要な部分を除去して、所定のパターンを形成する。
現像に使用される現像液としては、例えば、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、ケイ酸ナトリウム、メタケイ酸ナトリウム、アンモニア等の無機アルカリ類;エチルアミン、n−プロピルアミン等の脂肪族1級アミン類;ジエチルアミン、ジ−n−プロピルアミン等の脂肪族2級アミン類;トリメチルアミン、メチルジエチルアミン、ジメチルエチルアミン、トリエチルアミン等の脂肪族3級アミン類;ピロール、ピペリジン、N−メチルピペリジン、N−メチルピロリジン、1,8−ジアザビシクロ[5.4.0]−7−ウンデセン、1,5−ジアザビシクロ[4.3.0]−5−ノネン等の脂環族3級アミン類;ピリジン、コリジン、ルチジン、キノリン等の芳香族3級アミン類;ジメチルエタノールアミン、メチルジエタノールアミン、トリエタノールアミン等のアルカノールアミン類;テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド等の4級アンモニウム塩等のアルカリ性化合物の水溶液を使用することができる。
また、前記アルカリ性化合物の水溶液には、メタノール、エタノール等の水溶性有機溶媒および/または界面活性剤を適当量添加して使用することもできる。
現像方法としては、液盛り法、ディッピング法、シャワー法等のいずれでもよく、現像時間は、通常、常温で10〜180秒間程度である。
現像後、例えば流水洗浄を30〜90秒間行ったのち、例えば圧縮空気や圧縮窒素で風乾させることによって、所望のパターンが形成される。
-(C) Process-
Subsequently, the exposed film is developed to remove unnecessary portions and form a predetermined pattern.
Examples of the developer used for development include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia; and aliphatic primary grades such as ethylamine and n-propylamine. Amines; aliphatic secondary amines such as diethylamine and di-n-propylamine; aliphatic tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; pyrrole, piperidine, N-methylpiperidine, N-methyl Alicyclic tertiary amines such as pyrrolidine, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene; pyridine, collidine, lutidine , Aromatic tertiary amines such as quinoline; dimethylethanolamine, methyl Ethanolamine, alkanolamines such as triethanolamine; tetramethylammonium hydroxide, may be used an aqueous solution of an alkaline compound such as quaternary ammonium salts such as tetraethyl ammonium hydroxide.
In addition, an appropriate amount of a water-soluble organic solvent such as methanol or ethanol and / or a surfactant can be added to the aqueous solution of the alkaline compound.
As a developing method, any of a liquid filling method, a dipping method, a shower method and the like may be used, and the developing time is usually about 10 to 180 seconds at room temperature.
After development, for example, after washing with running water for 30 to 90 seconds, a desired pattern is formed by, for example, air drying with compressed air or compressed nitrogen.
−(二)工程−
次いで、得られたパターンを、例えばホットプレート、オーブン等の加熱装置により、所定温度、例えば100〜160℃で、所定時間、例えばホットプレート上では5〜30分間、オーブン中では30〜180分間、加熱(ポストベーク)をすることにより、所定のスペーサーを得ることができる。
スペーサーの形成に使用される従来の感放射線性樹脂組成物は、180〜200℃程度以上の温度で加熱処理を行わないと、得られたスペーサーが十分な性能を発揮できなかったが、本発明の感放射線性樹脂組成物は、加熱温度を、従来より低温とすることができ、その結果、樹脂基板の黄変や変形を来たすことなく、圧縮強度、液晶配向時のラビング耐性、透明基板との密着性等の諸性能に優れるスペーサーをもたらすことができる。
-(2) Process-
Next, the obtained pattern is heated at a predetermined temperature, for example, 100 to 160 ° C., for a predetermined time, for example, 5 to 30 minutes on the hot plate, for 30 to 180 minutes in the oven, by a heating device such as a hot plate or oven. A predetermined spacer can be obtained by heating (post-baking).
The conventional radiation-sensitive resin composition used for the formation of the spacer cannot exhibit sufficient performance unless the heat treatment is performed at a temperature of about 180 to 200 ° C. or higher. The radiation-sensitive resin composition can be heated at a lower temperature than before, and as a result, without causing yellowing or deformation of the resin substrate, compressive strength, rubbing resistance during liquid crystal alignment, It is possible to provide a spacer having excellent performance such as adhesion.
液晶表示素子
本発明の液晶表示素子は、前記のようにして形成された本発明のスペーサーを具備するものである。
液晶表示素子の構造としては特に限定されるものではないが、例えば、図1に示すように、透明基板上にカラーフィルター層と本発明のスペーサーを形成し、液晶層を介して配置される2つの配向膜、対向する透明電極、対向する透明基板等を有する構造を挙げることができる。また図1に示すように、必要に応じて、偏光板や、カラーフィルター層上に保護膜を設けることもできる。
Liquid crystal display element The liquid crystal display element of the present invention comprises the spacer of the present invention formed as described above.
The structure of the liquid crystal display element is not particularly limited. For example, as shown in FIG. 1, a color filter layer and a spacer of the present invention are formed on a transparent substrate, and the liquid
さらに図2に示すように、透明基板上にカラーフィルター層と本発明のスペーサーを形成し、配向膜および液晶層を介して、薄膜トランジスター(TFT)アレイと対向させることによって、TN−TFT型の液晶表示素子とすることもできる。この場合も、必要に応じて、偏光板や、カラーフィルター層上に保護膜を設けることができる。 Further, as shown in FIG. 2, a color filter layer and a spacer of the present invention are formed on a transparent substrate, and are made to face a thin film transistor (TFT) array through an alignment film and a liquid crystal layer, thereby allowing a TN-TFT type. It can also be set as a liquid crystal display element. Also in this case, a protective film can be provided on the polarizing plate or the color filter layer as necessary.
本発明のスペーサー形成用感放射線性樹脂組成物は、感放射線性重合開始剤成分の昇華による焼成炉やフォトマスク等の汚染を抑制でき、液中異物を生じることがなく、かつ高感度および高解像度であり、しかも断面形状、圧縮強度、ラビング耐性、透明基板との密着性等の諸性能に優れたスペーサーを容易に形成することができ、さらにはスペーサー形成時にポストベークの温度を下げることが可能であり、樹脂基板の黄変や変形を来たすことがない。
本発明の液晶表示素子は、断面形状、圧縮強度、ラビング耐性、透明基板との密着性等の諸性能に優れたスペーサーを具備するものであり、長期にわたり高い信頼性を確保することができる。
The radiation-sensitive resin composition for spacer formation of the present invention can suppress contamination of a baking furnace, a photomask, etc. due to sublimation of the radiation-sensitive polymerization initiator component, does not cause foreign matter in the liquid, and has high sensitivity and high sensitivity. It is easy to form a spacer with excellent resolution and other performance such as cross-sectional shape, compressive strength, rubbing resistance, adhesion to a transparent substrate, and lowering the post-baking temperature when forming the spacer. This is possible and does not cause yellowing or deformation of the resin substrate.
The liquid crystal display element of the present invention includes a spacer having excellent performance such as a cross-sectional shape, compressive strength, rubbing resistance, and adhesion to a transparent substrate, and can ensure high reliability over a long period of time.
以下、実施例を挙げて、本発明の実施の形態をさらに具体的に説明する。
合成例1
冷却管、撹拌機を備えたフラスコに、2,2’−アゾビス(2,4−ジメチルバレロニトリル)5重量部、ジエチレングリコールエチルメチルエーテル250重量部を仕込み、引き続いてメタクリル酸17重量部、メタクリル酸グリシジル45重量部、スチレン20重量部、ジシクロペンタニルメタクリレート18重量部を仕込んで、窒素置換したのち、緩やかに攪拌しつつ、溶液の温度を70℃に上昇させ、この温度を4時間保持して重合させて、〔A〕共重合体を含む樹脂溶液(固形分濃度=28.4重量%)を得た。得られた〔A〕共重合体のMwは16,000であった。
この〔A〕共重合体を「共重合体(A-1)」とする。
共重合体(A-1)および下記する共重合体(A-2)のMwは、GPC(ゲルパーミエイションクロマトグラフィー) HLC−8020(東ソー(株)製)を用いて測定した。
Hereinafter, the embodiment of the present invention will be described more specifically with reference to examples.
Synthesis example 1
A flask equipped with a condenser and a stirrer was charged with 5 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 250 parts by weight of diethylene glycol ethyl methyl ether, followed by 17 parts by weight of methacrylic acid and methacrylic acid. After 45 parts by weight of glycidyl, 20 parts by weight of styrene and 18 parts by weight of dicyclopentanyl methacrylate were substituted with nitrogen, the temperature of the solution was raised to 70 ° C. while gently stirring, and this temperature was maintained for 4 hours. To obtain a resin solution (solid content concentration = 28.4% by weight) containing the [A] copolymer. Mw of the obtained [A] copolymer was 16,000.
This [A] copolymer is referred to as “copolymer (A-1)”.
Mw of the copolymer (A-1) and the copolymer (A-2) described below was measured using GPC (gel permeation chromatography) HLC-8020 (manufactured by Tosoh Corporation).
合成例2
冷却管、撹拌機を備えたフラスコに、2,2’−アゾビス(2,4−ジメチルバレロニトリル)7重量部、ジエチレングリコールエチルメチルエーテル250重量部を仕込み、引き続いてメタクリル酸18重量部、メタクリル酸グリシジル20重量部、スチレン5重量部、ジシクロペンタニルメタクリレート32重量部、テトラヒドロフルフリルメタクリレート25重量部を仕込んで、窒素置換したのち、緩やかに攪拌しつつ、溶液の温度を70℃に上昇させ、この温度を4時間保持して重合させて、〔A〕共重合体を含む樹脂溶液(固形分濃度=28.8重量%)を得た。得られた得られた〔A〕共重合体のMwは11,000であった。
この〔A〕共重合体を「共重合体(A-2)」とする。
Synthesis example 2
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 250 parts by weight of diethylene glycol ethyl methyl ether, followed by 18 parts by weight of methacrylic acid and methacrylic acid. After charging 20 parts by weight of glycidyl, 5 parts by weight of styrene, 32 parts by weight of dicyclopentanyl methacrylate, and 25 parts by weight of tetrahydrofurfuryl methacrylate and replacing with nitrogen, the temperature of the solution was raised to 70 ° C. while gently stirring. This temperature was maintained for 4 hours for polymerization to obtain a resin solution containing [A] copolymer (solid content concentration = 28.8% by weight). Mw of the obtained [A] copolymer obtained was 11,000.
This [A] copolymer is referred to as “copolymer (A-2)”.
実施例1
−組成物溶液の調製−
〔A〕成分として、合成例1で得た樹脂溶液を共重合体(A-1)として100重量部(固形分)、〔B〕成分としてジペンタエリストールヘキサアクリレート(商品名KAYARAD DPHA、日本化薬(株)製)80重量部、〔C〕成分として2−(4−メチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタン−1−オン(商品名イルガキュア379、チバ・スペシャルティー・ケミカルズ社製)40重量、接着助剤としてγ−グリシドキシプロピルトリメトキシシラン5重量部、界面活性剤としてフタージェントFTX−218を0.5重量部、保存安定剤として4−メトキフェノール0.5重量部を混合し、固形分濃度が30重量%になるようにプロピレングリコールメチルエーテルアセテートに溶解したのち、孔径0.5μmのミリポアフィルタでろ過して、組成物溶液を調製した。
Example 1
-Preparation of composition solution-
As component [A], 100 parts by weight (solid content) of the resin solution obtained in Synthesis Example 1 as copolymer (A-1), and as component [B], dipentaerystol hexaacrylate (trade name: KAYARAD DPHA, Japan 80 parts by weight of Kayaku Co., Ltd., and 2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one (trade name Irgacure) as the [C] component 379, manufactured by Ciba Specialty Chemicals), 40 parts by weight, 5 parts by weight of γ-glycidoxypropyltrimethoxysilane as an adhesion aid, 0.5 parts by weight of surfactant FTX-218 as a surfactant, storage stabilizer As a solution, 0.5 part by weight of 4-methoxyphenol is mixed and dissolved in propylene glycol methyl ether acetate so that the solid content concentration is 30% by weight. And then, filtered through a Millipore filter having a pore size 0.5 [mu] m, to prepare a composition solution.
−スペーサーの形成−
無アルカリガラス基板上にスピンナーを用いて、前記組成物溶液を塗布したのち、80℃のホットプレート上で3分間プレベークして、膜厚6.0μmの被膜を形成した。
次いで、得られた被膜に10μm角の残しパターンを有するフォトマスクを介して、波長365nmにおける強度が250W/m2 の紫外線を10秒間露光した。その後、0.05重量%水酸化カリウム水溶液により、25℃で60秒間現像したのち、純水で1分間洗浄した。その後、オーブン中、150℃で120分間ポストベークすることにより、所定パターンのスペーサーを形成した。
次いで、下記(I) 〜(VIII) の手順で評価を行った。評価結果を表2−1に示す。
-Spacer formation-
The composition solution was applied onto an alkali-free glass substrate using a spinner and then pre-baked on an 80 ° C. hot plate for 3 minutes to form a film having a thickness of 6.0 μm.
Subsequently, the obtained film was exposed to ultraviolet rays having an intensity of 250 W / m 2 at a wavelength of 365 nm for 10 seconds through a photomask having a remaining pattern of 10 μm square. Thereafter, development was performed with a 0.05 wt% aqueous potassium hydroxide solution at 25 ° C. for 60 seconds, followed by washing with pure water for 1 minute. Then, the spacer of the predetermined pattern was formed by post-baking for 120 minutes at 150 degreeC in oven.
Subsequently, evaluation was performed according to the following procedures (I) to (VIII). The evaluation results are shown in Table 2-1.
(I) 感度の評価
スペーサーを形成したとき、現像後の残膜率(現像後の膜厚×100/初期膜厚。以下同様。)が90%になる露光量を感度とした。この露光量が1,500J/m2 以下のとき、感度が良好といえる。
(II) 解像度の評価
スペーサーを形成したとき、現像後の残膜率が90%以上となる露光量により解像される最小のパターン寸法により評価した。
(I) Evaluation of sensitivity When the spacer was formed, the exposure amount at which the residual film ratio after development (film thickness after development × 100 / initial film thickness; the same applies hereinafter) was 90% was defined as sensitivity. When this exposure amount is 1,500 J / m 2 or less, it can be said that the sensitivity is good.
(II) Evaluation of resolution When the spacer was formed, the resolution was evaluated based on the minimum pattern size resolved by the exposure amount at which the remaining film ratio after development was 90% or more.
(III)スペーサーの断面形状の評価
得られたスペーサーの断面形状を走査型電子顕微鏡にて観察して、図3に示すA〜Dのいずれに該当するかにより評価した。このとき、AあるいはBのように、パターンエッジが順テーパーあるいは垂直状である場合は、断面形状が良好といえる。これに対して、Cに示すように、感度が不十分で残膜率が低く、断面寸法がAおよびBに比較して小さくなり、底面が平面の半凸レンズ状である場合は、断面形状が不良であり、またDに示すように、逆テーパ状(断面形状で、膜表面の辺が基板側の辺よりも長い逆三角形状)である場合も、後のラビング処理時にパターンが剥がれるおそれが非常に大きくなることから、断面形状が不良とした。
(III) Evaluation of the cross-sectional shape of the spacer The cross-sectional shape of the obtained spacer was observed with a scanning electron microscope and evaluated according to which of A to D shown in FIG. At this time, when the pattern edge is forward tapered or vertical like A or B, it can be said that the cross-sectional shape is good. On the other hand, as shown in C, when the sensitivity is insufficient, the remaining film rate is low, the cross-sectional dimension is small compared to A and B, and the bottom surface is a semi-convex lens shape with a flat surface, the cross-sectional shape is Also, as shown in D, the pattern may be peeled off during the subsequent rubbing process even in the case of an inversely tapered shape (in the cross-sectional shape, an inverted triangular shape in which the side of the film surface is longer than the side on the substrate side). Since it became very large, the cross-sectional shape was regarded as defective.
(IV)圧縮強度の評価
得られたスペーサーについて、微小圧縮試験機(MCTM−200、(株)島津製作所製)を用い、直径50μmの平面圧子により、10mNの荷重を加えたときの変形量を、測定温度23℃で測定した。この値が0.5μm以下のとき、圧縮強度が良好といえる。(V)ラビング耐性の評価
スペーサーを形成した基板に、液晶配向剤としてAL3046(商品名、JSR(株)製)を液晶配向膜塗布用印刷機により塗布したのち、180℃で1時間乾燥して、膜厚0.05μmの液晶配向剤の塗膜を形成した。
その後、この塗膜に、ポリアミド製の布を巻き付けたロールを有するラビングマシーンにより、ロールの回転数500rpm、ステージの移動速度1cm/秒として、ラビング処理を行った。このとき、パターンの削れや剥がれの有無を評価した。
(IV) Evaluation of compressive strength About the obtained spacer, using a micro compression tester (MCTM-200, manufactured by Shimadzu Corporation), the amount of deformation when a load of 10 mN was applied by a flat indenter with a diameter of 50 μm was used. The measurement temperature was 23 ° C. When this value is 0.5 μm or less, it can be said that the compressive strength is good. (V) Evaluation of rubbing resistance AL3046 (trade name, manufactured by JSR Co., Ltd.) as a liquid crystal aligning agent was applied to a substrate on which a spacer was formed by a printing machine for applying a liquid crystal alignment film, and then dried at 180 ° C. for 1 hour. A film of a liquid crystal aligning agent having a thickness of 0.05 μm was formed.
Thereafter, the coating film was subjected to a rubbing treatment with a rubbing machine having a roll around which a polyamide cloth was wound, with a roll rotation speed of 500 rpm and a stage moving speed of 1 cm / sec. At this time, the presence or absence of pattern shaving or peeling was evaluated.
(VI) 密着性の評価
フォトマスクを使用しなかった以外は前記スペーサーの形成と同様にして、硬化膜を形成した。その後、JIS K−5400(1900)8.5の付着性試験のうち、8.5・2の碁盤目テープ法により評価した。このとき、100個の碁盤目のうち残った碁盤目の数を表2に示す。
(VI) Evaluation of adhesion A cured film was formed in the same manner as in the formation of the spacer except that no photomask was used. Thereafter, the adhesive test of JIS K-5400 (1900) 8.5 was evaluated by the 8.5 / 2 cross-cut tape method. At this time, the number of remaining grids out of 100 grids is shown in Table 2.
(VII)昇華性の評価
前記組成物溶液を基板上に塗布したのち乾燥して、膜厚6.0μmの被膜を形成した。その後、この被膜について、標準物質としてn−オクタン(比重=0.701、注入量=0.02μリットル)を用い、パージ条件を100℃/10分として、ヘッドスペースガスクロマトグラフィー/質量分析(ヘッドスペースサンプラ:日本分析工業(株)製JHS−100A、ガスクロマトグラフィー/質量分析装置:日本分析工業(株)製JEOL JMS−AX505W型質量分析計)を行って、感放射線性重合開始剤に由来するピーク面積Aを求め、下記計算式により、n−オクタン換算による揮発量を算出した。この揮発量が大きいほど、昇華性が大きいといえる。
n−オクタン換算による揮発量の計算式
揮発量(μg)
=A×(n−オクタンの量)(μg)/(n−オクタンのピーク面積)
(VII) Evaluation of sublimation property The composition solution was applied onto a substrate and then dried to form a film having a thickness of 6.0 μm. Thereafter, for this coating, n-octane (specific gravity = 0.701, injection amount = 0.02 μL) was used as a standard substance, purge conditions were set to 100 ° C./10 minutes, headspace gas chromatography / mass spectrometry (head Space sampler: JHS-100A manufactured by Nihon Analytical Industries, Ltd., gas chromatography / mass spectrometer: JEOL JMS-AX505W type mass spectrometer manufactured by Nihon Analytical Industries, Ltd.), derived from a radiation-sensitive polymerization initiator The peak area A to be obtained was determined, and the volatilization amount in terms of n-octane was calculated by the following formula. It can be said that the greater the volatilization amount, the greater the sublimation property.
Calculation formula for volatilization amount in terms of n-octane Volatilization amount (μg)
= A × (amount of n-octane) (μg) / (peak area of n-octane)
(VIII) 液中異物の評価
前記組成物溶液を、−15℃で7日間保存したときの感放射線性重合開始剤成分の再結晶化物の有無を目視で観察した。また、保存した前記組成物溶液の液温を−15℃から23℃に上げたとき、組成物溶液1ミリリットル中に再溶解せずに残存する0.5μm以上の大きさの固形物(残存異物)の数を、光散乱式液中粒子検出器(商品名KS−28B、リオン(株)製)を用いて測定した。
(VIII) Evaluation of foreign matter in liquid The presence or absence of a recrystallized product of the radiation-sensitive polymerization initiator component when the composition solution was stored at −15 ° C. for 7 days was visually observed. Further, when the liquid temperature of the stored composition solution is raised from −15 ° C. to 23 ° C., a solid matter (residual foreign matter) having a size of 0.5 μm or more remaining without being redissolved in 1 ml of the composition solution. ) Was measured using a light scattering liquid particle detector (trade name KS-28B, manufactured by Rion Co., Ltd.).
実施例2〜23
〔A〕成分、〔B〕成分および〔C〕成分として表1−1に示す各成分を使用した他は実施例1と同様にして、各組成物溶液を調製し、スペーサーを形成して、評価を行った。評価結果を表2−1に示す。
Examples 2-23
Each composition solution was prepared in the same manner as in Example 1 except that the components shown in Table 1-1 were used as the components [A], [B] and [C], and a spacer was formed. Evaluation was performed. The evaluation results are shown in Table 2-1.
実施例24
実施例1と同様の各成分を、固形分濃度が17.5重量%になるようにジエチレングリコールエチルメチルエーテルに溶解したのち、孔径0.5μmのミリポアフィルタでろ過して、組成物溶液を調製した以外は、実施例1と同様にして、スペーサーを形成して、評価を行った。評価結果を表2−1に示す。
Example 24
The same components as in Example 1 were dissolved in diethylene glycol ethyl methyl ether so that the solid content concentration was 17.5% by weight, and then filtered through a Millipore filter having a pore size of 0.5 μm to prepare a composition solution. Except for the above, a spacer was formed and evaluated in the same manner as in Example 1. The evaluation results are shown in Table 2-1.
比較例1〜8
〔A〕成分、〔B〕成分および感放射線性重合開始剤として表1−2に示す各成分を使用した他は実施例1と同様にして、各組成物溶液を調製し、スペーサーを形成して、評価を行った。評価結果を表2−2に示す。
Comparative Examples 1-8
Prepare each composition solution in the same manner as in Example 1 except that each of the components shown in Table 1-2 was used as the component [A], the component [B] and the radiation-sensitive polymerization initiator, and a spacer was formed. And evaluated. The evaluation results are shown in Table 2-2.
表1−1および表1−2中、〔A〕成分以外の各成分は下記のとおりである。
B-1:ジペンタエリストールヘキサアクリレート
B-2:商品名KAYARAD DPHA−40H(日本化薬(株)製)
C-1:2−(4−メチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノ フェニル)ブタン−1−オン
D-1:1−〔9−エチル−6−(2−メチルベンゾイル)−9.H.−カルバゾール−3 −イル〕エタン−1−オンオキシム−O−アセテート(商品名CGI−242、チ バ・スペシャルティー・ケミカルズ社製)
E-1:2−メチル−1−〔4−(メチルチオ)フェニル〕−2−モルフォリノプロパン− 1−オン(商品名イルガキュア907、チバ・スペシャルティー・ケミカルズ社製 )
E-2:2−ベンジル−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)ブタ ン−1−オン(商品名イルガキュア369、チバ・スペシャルティー・ケミカルズ 社製)
E-3:1−(2−ブロモ−4−モルフォリノフェニル)−2−ベンジル−2−ジメチルア ミノブタン−1−オン
F-1:2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェ ニル−1,2’−ビイミダゾール
F-2:4,4’−ビス(ジエチルアミノ)ベンゾフェノン
F-3:2−メルカプトベンゾチアゾール
In Table 1-1 and Table 1-2, each component other than [A] component is as follows.
B-1: Dipentaerystol hexaacrylate B-2: Trade name KAYARAD DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.)
C-1: 2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one D-1: 1- [9-ethyl-6- (2-methyl) Benzoyl) -9. H. -Carbazol-3-yl] ethane-1-one oxime-O-acetate (trade name CGI-242, manufactured by Ciba Specialty Chemicals)
E-1: 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one (trade name Irgacure 907, manufactured by Ciba Specialty Chemicals)
E-2: 2-benzyl-2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one (trade name Irgacure 369, manufactured by Ciba Specialty Chemicals)
E-3: 1- (2-bromo-4-morpholinophenyl) -2-benzyl-2-dimethylaminobutan-1-one F-1: 2,2′-bis (2,4-dichlorophenyl) -4, 4 ', 5,5'-tetraphenyl-1,2'-biimidazole F-2: 4,4'-bis (diethylamino) benzophenone F-3: 2-mercaptobenzothiazole
Claims (4)
〔B〕重合性不飽和化合物、並びに
〔C〕下記一般式(1)で表される化合物を必須成分とする感放射線性重合開始剤
を含有することを特徴とするスペーサー形成用感放射線性樹脂組成物。
[B] A radiation-sensitive resin for spacer formation, comprising a polymerizable unsaturated compound and [C] a radiation-sensitive polymerization initiator having a compound represented by the following general formula (1) as essential components Composition.
(ロ)該被膜の少なくとも一部に放射線を露光する工程。
(ハ)露光後の該被膜を現像する工程。
(ニ)現像後の該被膜を加熱する工程。 A method for forming a spacer, comprising at least the following steps (a) to (2). (A) A step of forming a coating of the radiation-sensitive resin composition for forming a spacer according to claim 1 on a substrate.
(B) A step of exposing radiation to at least a part of the coating.
(C) A step of developing the film after exposure.
(D) A step of heating the coated film after development.
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JP2004045033A JP4380359B2 (en) | 2004-02-20 | 2004-02-20 | Radiation-sensitive resin composition for spacer formation, spacer, method for forming the spacer, and liquid crystal display element |
TW094104389A TWI380065B (en) | 2004-02-20 | 2005-02-16 | Radiation sensitive resin composition for forming spacer, spacer and the forming method thereof, and liquid crystal display element |
KR1020050013016A KR100873558B1 (en) | 2004-02-20 | 2005-02-17 | Radiation Sensitive Resin Composition for Forming Spacer, Spacer and Its Forming Method, and Liquid Crystal Display Device |
CN200510008541A CN100576075C (en) | 2004-02-20 | 2005-02-18 | Partition forms with radiation sensitive resin composition, partition and forming method thereof and liquid crystal display cells |
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JP2009271532A (en) * | 2008-04-30 | 2009-11-19 | Dongjin Semichem Co Ltd | Negative photosensitive resin composition |
JP2011501816A (en) * | 2008-07-01 | 2011-01-13 | エルジー・ケム・リミテッド | Photosensitive resin composition containing a plurality of photoinitiators, transparent thin film layer using the same, and liquid crystal display device |
JP2015099393A (en) * | 2008-11-18 | 2015-05-28 | 住友化学株式会社 | Photosensitive resin composition and display device |
JP2015132833A (en) * | 2008-11-18 | 2015-07-23 | 住友化学株式会社 | Photosensitive resin composition and display unit |
JP2013171278A (en) * | 2012-02-23 | 2013-09-02 | Sumitomo Chemical Co Ltd | Photosensitive resin composition |
WO2020004601A1 (en) | 2018-06-29 | 2020-01-02 | 株式会社Adeka | Oxime ester compound and photopolymerization initiator containing same |
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CN100576075C (en) | 2009-12-30 |
KR20060042028A (en) | 2006-05-12 |
JP4380359B2 (en) | 2009-12-09 |
TWI380065B (en) | 2012-12-21 |
CN1821877A (en) | 2006-08-23 |
KR100873558B1 (en) | 2008-12-12 |
TW200537168A (en) | 2005-11-16 |
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