JP2005232492A - 蒸着装置 - Google Patents
蒸着装置 Download PDFInfo
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- JP2005232492A JP2005232492A JP2004039999A JP2004039999A JP2005232492A JP 2005232492 A JP2005232492 A JP 2005232492A JP 2004039999 A JP2004039999 A JP 2004039999A JP 2004039999 A JP2004039999 A JP 2004039999A JP 2005232492 A JP2005232492 A JP 2005232492A
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- vapor deposition
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000010894 electron beam technology Methods 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000010406 cathode material Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 150000002222 fluorine compounds Chemical class 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 4
- 239000011224 oxide ceramic Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 239000012044 organic layer Substances 0.000 abstract description 22
- 239000010408 film Substances 0.000 abstract description 17
- 239000002245 particle Substances 0.000 abstract description 17
- 230000000593 degrading effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 54
- 238000001704 evaporation Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 23
- 230000008020 evaporation Effects 0.000 description 20
- 230000001133 acceleration Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000005566 electron beam evaporation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000002542 deteriorative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
【解決手段】 蒸着材料1を充填する坩堝状の容器2が収容される収容体3を真空槽4内に設け、この収容体3に収容された容器2と対向状態に基板5を設け、前記収容体3を冷却しながら前記容器2の蒸着材料1に電子ビームを照射して加熱・蒸発させ、この蒸着材料1を基板5上に付着させることで薄膜を成膜する蒸着装置であって、前記容器2を収容する坩堝状介在部材6を介して容器2を収容体3に収容し、前記薄膜を成膜する際に加熱される容器2と冷却される収容体3とを前記坩堝状介在部材6にて断熱し得るように構成したものである。
【選択図】 図3
Description
2 容器
3 収容体
4 真空槽
5 基板
6 坩堝状介在部材
7 重合坩堝状介在部材
8 支承体
9 空間部
10 金属材料
Claims (9)
- 蒸着材料を充填する坩堝状の容器が収容される収容体を真空槽内に設け、この収容体に収容された容器と対向状態に基板を設け、前記収容体を冷却しながら前記容器の蒸着材料に電子ビームを照射して加熱・蒸発させ、この蒸着材料を基板上に付着させることで薄膜を成膜する蒸着装置であって、前記容器を収容する坩堝状介在部材を介して容器を収容体に収容し、前記薄膜を成膜する際に加熱される容器と冷却される収容体とを前記坩堝状介在部材にて断熱し得るように構成したことを特徴とする蒸着装置。
- 前記坩堝状介在部材を複数重合せしめた重合坩堝状介在部材を介して前記容器を前記収容体に収容したことを特徴とする請求項1記載の蒸着装置。
- 前記収容体と坩堝状介在部材との間,坩堝状介在部材と容器との間若しくは坩堝状介在部材同志の間に、この容器若しくは坩堝状介在部材を支承する支承体を配設し、この収容体と坩堝状介在部材との間,坩堝状介在部材と容器との間若しくは坩堝状介在部材同志の間に所定幅の空間部を形成したことを特徴とする請求項1,2のいずれか1項に記載の蒸着装置。
- 前記支承体として、前記坩堝状介在部材若しくは容器を点接触若しくは線接触で支承する形状のものを採用したことを特徴とする請求項3記載の蒸着装置。
- 前記蒸着材料として、陽極,有機EL層,陰極を順次積層して成る有機EL素子を形成する有機EL材料を採用したことを特徴とする請求項1〜4のいずれか1項に記載の蒸着装置。
- 前記有機EL素子として、薄膜トランジスタで駆動される構成の有機EL素子を形成することを特徴とする請求項5記載の蒸着装置。
- 前記有機EL素子の陰極を形成する陰極材料として、アルミニウム,クロム,銅,金,銀,白金等の金属,カルシウム,リチウム,バリウム,セシウム,マグネシウム等のアルカリ金属若しくはそれらの酸化物やフッ化物を採用したことを特徴とする請求項5,6のいずれか1項に記載の蒸着装置。
- 前記基板として、前記有機EL層が形成されたものを採用し、この有機EL層は、分子数の少ない低分子材料若しくは分子数の多い高分子材料から成る有機EL層であることを特徴とする請求項5〜7のいずれか1項に記載の蒸着装置。
- 前記坩堝状介在部材として、前記陰極材料より熱伝導率が低く融点が高い、窒化物セラミックス,炭化物セラミックス,酸化物セラミックスや、カーボン,タングステン,モリブデン等の高融点金属若しくは金属材料を表面にコーティングしたセラミックスやセラミックス材料を表面にコーティングした金属から成るものを採用したことを特徴とする請求項5〜8のいずれか1項に記載の蒸着装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004039999A JP4233469B2 (ja) | 2004-02-17 | 2004-02-17 | 蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004039999A JP4233469B2 (ja) | 2004-02-17 | 2004-02-17 | 蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005232492A true JP2005232492A (ja) | 2005-09-02 |
JP4233469B2 JP4233469B2 (ja) | 2009-03-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004039999A Expired - Fee Related JP4233469B2 (ja) | 2004-02-17 | 2004-02-17 | 蒸着装置 |
Country Status (1)
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JP (1) | JP4233469B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220358A (ja) * | 2006-02-14 | 2007-08-30 | Tokyo Electron Ltd | 基板処理装置および発光素子の製造方法 |
JP2009238607A (ja) * | 2008-03-27 | 2009-10-15 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2009299115A (ja) * | 2008-06-12 | 2009-12-24 | Hitachi Zosen Corp | 蒸着装置 |
JP2010056013A (ja) * | 2008-08-29 | 2010-03-11 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2010146846A (ja) * | 2008-12-18 | 2010-07-01 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2010192118A (ja) * | 2009-02-13 | 2010-09-02 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
KR101740007B1 (ko) * | 2015-11-06 | 2017-05-26 | 주식회사 선익시스템 | 증발원 |
-
2004
- 2004-02-17 JP JP2004039999A patent/JP4233469B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220358A (ja) * | 2006-02-14 | 2007-08-30 | Tokyo Electron Ltd | 基板処理装置および発光素子の製造方法 |
JP2009238607A (ja) * | 2008-03-27 | 2009-10-15 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2009299115A (ja) * | 2008-06-12 | 2009-12-24 | Hitachi Zosen Corp | 蒸着装置 |
JP2010056013A (ja) * | 2008-08-29 | 2010-03-11 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2010146846A (ja) * | 2008-12-18 | 2010-07-01 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2010192118A (ja) * | 2009-02-13 | 2010-09-02 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
KR101740007B1 (ko) * | 2015-11-06 | 2017-05-26 | 주식회사 선익시스템 | 증발원 |
Also Published As
Publication number | Publication date |
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JP4233469B2 (ja) | 2009-03-04 |
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