JP2005207581A - 摩擦材の造粒方法及び摩擦材予備成形品の製造方法 - Google Patents
摩擦材の造粒方法及び摩擦材予備成形品の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 35
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B9/00—Making granules
- B29B9/02—Making granules by dividing preformed material
- B29B9/04—Making granules by dividing preformed material in the form of plates or sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B9/00—Making granules
- B29B9/12—Making granules characterised by structure or composition
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
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- C09K3/00—Materials not provided for elsewhere
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- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
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- B29C43/361—Moulds for making articles of definite length, i.e. discrete articles with pressing members independently movable of the parts for opening or closing the mould, e.g. movable pistons
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- B29C2043/3628—Forming elements, e.g. mandrels or rams or stampers or pistons or plungers or punching devices moving inside a barrel or container like sleeve
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Abstract
【解決手段】 少なくとも粘着性物質を含む複数の物質を混合してなる摩擦材の粉末状原料aをホッパー110に投入し、溶剤を5重量%以下(無添加を含む)添加し、かつ、加熱しない状態で加圧ロール130で圧縮して帯状原料bとして固める。次に、帯状原料bを粉砕機140で粉砕して粒子状原料c化する。粒子状原料cは、化学的な変質をすることなく粒子化されているので、粉末状原料の場合と同様に予備成形品を製造することができる。
【選択図】 図1
Description
ホッパ110内には、粉末状原料aが投入される。粉末状原料aは、繊維材、充填材、結合材等を混合したものである。粉末状原料aには、0.1〜5.0重量%以下の溶剤を添加する。溶剤としては水を使用している。粉末状原料aに粘着性物質を加えると、添加量は、5重量%以下であればよく、下限としては0重量%、すなわち無添加でもよい。粘着性物質の有無に関わりなく最も好ましい添加量は、2〜3重量%である。
c 粒子状原料
100 造粒装置
130 加圧ロール
Claims (7)
- 複数の物質を混合してなる摩擦材の粉末状原料に、溶剤を0.1〜5.0重量%添加して無加熱状態で圧縮する工程と、圧縮され固まった原料を粉砕する工程とを有することを特徴とする摩擦材の造粒方法。
- 少なくとも粘着性物質を含む複数の物質を混合してなる摩擦材の粉末状原料に、溶剤を5重量%以下添加して無加熱状態で圧縮する工程と、圧縮され固まった原料を粉砕する工程とを有することを特徴とする摩擦材の造粒方法。
- 前記圧縮行程は、粉末状原料が加圧ローラ間を通過することによって行われることを特徴とする請求項1又は2記載の摩擦材の造粒方法。
- 前記圧縮行程における圧力が、50〜300MPaであることを特徴とする請求項1又は2記載の摩擦材の造粒方法。
- 前記加圧ローラに加わる圧縮力が、5×103〜3×104N/cmであることを特徴とする請求項3記載の摩擦材の造粒方法。
- 前記摩擦材の粉末状原料を組成の異なる複数種類の粉末状原料とし、複数種類のそれぞれを別個に造粒することを特徴とする請求項1から5のいずれかに記載の摩擦材の造粒方法。
- 請求項1から6のいずれかに記載の方法により造粒された摩擦材を金型内に投入し、無加熱で加圧して形成することを特徴とする摩擦材予備成形品の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004334342A JP2005207581A (ja) | 2003-12-25 | 2004-11-18 | 摩擦材の造粒方法及び摩擦材予備成形品の製造方法 |
US11/012,564 US7648659B2 (en) | 2003-12-25 | 2004-12-15 | Method of pelletizing friction material and method of manufacturing preliminarily formed material for friction material |
KR1020040111862A KR20050065409A (ko) | 2003-12-25 | 2004-12-24 | 마찰재의 조립화 방법 및 마찰재용 예비 성형재의 제조 방법 |
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JP2004334342A JP2005207581A (ja) | 2003-12-25 | 2004-11-18 | 摩擦材の造粒方法及び摩擦材予備成形品の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012210561A (ja) * | 2011-03-30 | 2012-11-01 | Central Research Institute Of Electric Power Industry | 石炭灰の圧密造粒装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5105509B2 (ja) * | 2007-02-02 | 2012-12-26 | 曙ブレーキ工業株式会社 | 摩擦材用造粒物の製造方法、摩擦材用造粒物、摩擦材の製造方法および摩擦材 |
ES2439958T3 (es) * | 2007-10-18 | 2014-01-27 | Ecolab Inc. | Composiciones de limpieza sólidas, céreas y comprimidas, y métodos de hacerlas |
CN102407552B (zh) * | 2011-10-21 | 2013-09-18 | 成都彩虹环保科技有限公司 | 多层纤维板成型装置 |
ITTO20150242A1 (it) * | 2015-05-07 | 2016-11-07 | Itt Italia Srl | Metodi per la preparazione di un materiale di attrito e per la fabbricazione di una pastiglia freno utilizzante tale materiale di attrito |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS54138053A (en) * | 1978-04-18 | 1979-10-26 | Matsushita Electric Works Ltd | Preparation of phenolic resin composition for molding friction material |
JPH09264358A (ja) * | 1996-03-28 | 1997-10-07 | Akebono Brake Res & Dev Center Ltd | 造粒物及び摩擦材の製造方法 |
JP2004508969A (ja) * | 2000-09-15 | 2004-03-25 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | プラスチック成形物を形成するため次の加工を受ける造粒中間生成物を生成するための方法 |
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JP2993362B2 (ja) | 1994-04-26 | 1999-12-20 | 住友電気工業株式会社 | ファイバ含有造粒材料の製造方法 |
JP3409426B2 (ja) | 1994-05-02 | 2003-05-26 | 住友電気工業株式会社 | ディスクブレーキパッドの製造方法 |
US5746957A (en) * | 1997-02-05 | 1998-05-05 | Alliedsignal Inc. | Gel strength enhancing additives for agaroid-based injection molding compositions |
SE512143C2 (sv) * | 1997-05-06 | 2000-01-31 | Perstorp Ab | Förfarande för framställning av dekorativt laminat och användning därav |
US6126873A (en) * | 1998-06-03 | 2000-10-03 | Alliedsignal Inc. | Process for making stainless steel aqueous molding compositions |
US6146560A (en) * | 1999-01-22 | 2000-11-14 | Behi; Mohammad | Process for forming an article from recycled ceramic molding compound |
US6291560B1 (en) * | 1999-03-01 | 2001-09-18 | Alliedsignal Inc. | Metal/ceramic composite molding material |
US6793856B2 (en) * | 2000-09-21 | 2004-09-21 | Outlast Technologies, Inc. | Melt spinable concentrate pellets having enhanced reversible thermal properties |
US7074355B2 (en) * | 2003-09-02 | 2006-07-11 | United Phosphorus Ltd. | Process for dry granulation by agitative balling for the preparation of chemically stable, dry-flow, low compact, dust free, soluble spherical granules of phosphoroamidothioate |
KR100558446B1 (ko) * | 2003-11-19 | 2006-03-10 | 삼성전기주식회사 | 파장변환용 몰딩 화합물 수지 태블릿 제조방법과 이를이용한 백색 발광다이오드 제조방법 |
-
2004
- 2004-11-18 JP JP2004334342A patent/JP2005207581A/ja active Pending
- 2004-12-15 US US11/012,564 patent/US7648659B2/en not_active Expired - Fee Related
- 2004-12-24 KR KR1020040111862A patent/KR20050065409A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54138053A (en) * | 1978-04-18 | 1979-10-26 | Matsushita Electric Works Ltd | Preparation of phenolic resin composition for molding friction material |
JPH09264358A (ja) * | 1996-03-28 | 1997-10-07 | Akebono Brake Res & Dev Center Ltd | 造粒物及び摩擦材の製造方法 |
JP2004508969A (ja) * | 2000-09-15 | 2004-03-25 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | プラスチック成形物を形成するため次の加工を受ける造粒中間生成物を生成するための方法 |
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JP2012210561A (ja) * | 2011-03-30 | 2012-11-01 | Central Research Institute Of Electric Power Industry | 石炭灰の圧密造粒装置 |
Also Published As
Publication number | Publication date |
---|---|
US7648659B2 (en) | 2010-01-19 |
US20050200042A1 (en) | 2005-09-15 |
KR20050065409A (ko) | 2005-06-29 |
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