JP2005203762A5 - - Google Patents
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- Publication number
- JP2005203762A5 JP2005203762A5 JP2004362339A JP2004362339A JP2005203762A5 JP 2005203762 A5 JP2005203762 A5 JP 2005203762A5 JP 2004362339 A JP2004362339 A JP 2004362339A JP 2004362339 A JP2004362339 A JP 2004362339A JP 2005203762 A5 JP2005203762 A5 JP 2005203762A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- integrated circuit
- film integrated
- forming
- circuit devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 68
- 239000010408 film Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 16
- 229910052736 halogen Inorganic materials 0.000 claims 10
- -1 halogen fluoride Chemical class 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 8
- 239000007788 liquid Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 125000001424 substituent group Chemical group 0.000 claims 4
- WKODDKLNZNVCSL-UHFFFAOYSA-N 1,3,2$l^{2},4$l^{2}-oxazadisiletidine Chemical compound N1[Si]O[Si]1 WKODDKLNZNVCSL-UHFFFAOYSA-N 0.000 claims 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N Chlorine trifluoride Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 2
- 229910020313 ClF Inorganic materials 0.000 claims 2
- 230000037283 Clf Effects 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- 239000010432 diamond Substances 0.000 claims 2
- 229910003460 diamond Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- 229910052904 quartz Inorganic materials 0.000 claims 2
- 210000002356 Skeleton Anatomy 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004362339A JP5110766B2 (ja) | 2003-12-15 | 2004-12-15 | 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003417317 | 2003-12-15 | ||
| JP2003417317 | 2003-12-15 | ||
| JP2004362339A JP5110766B2 (ja) | 2003-12-15 | 2004-12-15 | 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005203762A JP2005203762A (ja) | 2005-07-28 |
| JP2005203762A5 true JP2005203762A5 (zh) | 2008-01-24 |
| JP5110766B2 JP5110766B2 (ja) | 2012-12-26 |
Family
ID=34829151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004362339A Expired - Fee Related JP5110766B2 (ja) | 2003-12-15 | 2004-12-15 | 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5110766B2 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101368748B1 (ko) | 2004-06-04 | 2014-03-05 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
| TWI533459B (zh) * | 2005-06-02 | 2016-05-11 | 美國伊利諾大學理事會 | 可印刷半導體結構及製造和組合之相關方法 |
| US7176053B1 (en) * | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
| JP5196212B2 (ja) * | 2006-03-02 | 2013-05-15 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
| JP2008047776A (ja) * | 2006-08-18 | 2008-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US8463116B2 (en) | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
| KR101046064B1 (ko) * | 2008-12-11 | 2011-07-01 | 삼성전기주식회사 | 박막소자 제조방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970411B2 (ja) * | 1993-08-04 | 1999-11-02 | 株式会社日立製作所 | 半導体装置 |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP2000020665A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 半導体装置 |
| FR2796491B1 (fr) * | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | Procede de decollement de deux elements et dispositif pour sa mise en oeuvre |
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2003142666A (ja) * | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、ｉｃカード、及び電子機器 |
| JP4467215B2 (ja) * | 2001-09-04 | 2010-05-26 | 富士通株式会社 | 多孔質絶縁膜の形成方法及び半導体装置の製造方法 |
| JP3956697B2 (ja) * | 2001-12-28 | 2007-08-08 | セイコーエプソン株式会社 | 半導体集積回路の製造方法 |
-
2004
- 2004-12-15 JP JP2004362339A patent/JP5110766B2/ja not_active Expired - Fee Related
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