JP2005203762A5 - - Google Patents
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- JP2005203762A5 JP2005203762A5 JP2004362339A JP2004362339A JP2005203762A5 JP 2005203762 A5 JP2005203762 A5 JP 2005203762A5 JP 2004362339 A JP2004362339 A JP 2004362339A JP 2004362339 A JP2004362339 A JP 2004362339A JP 2005203762 A5 JP2005203762 A5 JP 2005203762A5
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- Prior art keywords
- thin film
- integrated circuit
- film integrated
- forming
- circuit devices
- Prior art date
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- 239000010409 thin film Substances 0.000 claims 68
- 239000010408 film Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 16
- 229910052736 halogen Inorganic materials 0.000 claims 10
- -1 halogen fluoride Chemical class 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 8
- 239000007788 liquid Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 125000001424 substituent group Chemical group 0.000 claims 4
- WKODDKLNZNVCSL-UHFFFAOYSA-N 1,3,2$l^{2},4$l^{2}-oxazadisiletidine Chemical compound N1[Si]O[Si]1 WKODDKLNZNVCSL-UHFFFAOYSA-N 0.000 claims 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N Chlorine trifluoride Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 2
- 229910020313 ClF Inorganic materials 0.000 claims 2
- 230000037283 Clf Effects 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- 239000010432 diamond Substances 0.000 claims 2
- 229910003460 diamond Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- 229910052904 quartz Inorganic materials 0.000 claims 2
- 210000002356 Skeleton Anatomy 0.000 claims 1
Claims (22)
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離することを特徴とする薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
A method for manufacturing a thin film integrated circuit device, wherein the plurality of thin film integrated circuit devices are separated by introducing a gas or a liquid containing halogen fluoride into the groove and removing the release layer.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記複数の薄膜集積回路装置の上方に、複数の突起部を有するジグの当該突起部を、前記薄膜集積回路装置毎に接着し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
前記複数の薄膜集積回路装置に接着された前記ジグを取り外すことを特徴とする薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Adhering the protrusions of the jig having a plurality of protrusions above the plurality of thin film integrated circuit devices for each of the thin film integrated circuit devices ,
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
A method for manufacturing a thin film integrated circuit device, wherein the jig bonded to the plurality of thin film integrated circuit devices is removed.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路を形成し、
前記薄膜集積回路上に耐熱性を有する絶縁膜を形成して薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離することを特徴とする薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuits are formed on the base film,
Forming an insulating film having heat resistance on the thin film integrated circuit to form a thin film integrated circuit device;
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
A method for manufacturing a thin film integrated circuit device, wherein the plurality of thin film integrated circuit devices are separated by introducing a gas or a liquid containing halogen fluoride into the groove and removing the release layer.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路を形成し、
前記薄膜集積回路上に耐熱性を有する絶縁膜を形成して薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記複数の薄膜集積回路装置の上方に、複数の突起部を有するジグの当該突起部を、前記薄膜集積回路装置毎に接着し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
前記複数の薄膜集積回路装置に接着されたジグを取り外すことを特徴とする薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuits are formed on the base film,
Forming an insulating film having heat resistance on the thin film integrated circuit to form a thin film integrated circuit device;
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Adhering the protrusions of the jig having a plurality of protrusions above the plurality of thin film integrated circuit devices for each of the thin film integrated circuit devices ,
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
A method for manufacturing a thin film integrated circuit device, comprising: removing a jig bonded to the plurality of thin film integrated circuit devices.
前記ジグの接着は、ＵＶ光によって接着力が低下又は喪失する接着剤を用いて行なうことを特徴とする薄膜集積回路装置の作製方法。 In claim 2 or 4,
The method of manufacturing a thin film integrated circuit device, wherein the bonding of the jig is performed using an adhesive whose adhesive strength is reduced or lost by UV light.
前記耐熱性を有する絶縁膜は、シリコンと酸素との結合で骨格構造が構成され、置換基に少なくとも水素を含む材料、若しくは置換基にフッ素、アルキル基、または芳香族炭化水素のうち少なくとも一種を有する材料からなることを特徴とする薄膜集積回路装置の作製方法。 In claim 3 or 4,
The insulating film having heat resistance has a skeletal structure composed of a bond of silicon and oxygen, and a material containing at least hydrogen as a substituent, or at least one of fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A method for manufacturing a thin film integrated circuit device, comprising:
前記剥離層は、シリコンを主成分として含むことを特徴とする薄膜集積回路装置の作製方法。 In any one of Claims 1 thru | or 6,
The method for manufacturing a thin film integrated circuit device, wherein the release layer contains silicon as a main component.
前記下地膜は、酸化珪素、窒化珪素、窒素を含む酸化珪素のいずれかを含むことを特徴とする薄膜集積回路装置の作製方法。 In any one of Claims 1 thru | or 7,
The method for manufacturing a thin film integrated circuit device, wherein the base film includes any one of silicon oxide, silicon nitride, and silicon oxide containing nitrogen.
前記溝はダイヤモンドスクライビング又はレーザースクライビングによって形成されることを特徴とする薄膜集積回路装置の作製方法。 In any one of Claims 1 thru | or 8,
The method of manufacturing a thin film integrated circuit device, wherein the groove is formed by diamond scribing or laser scribing .
前記基板は、ガラス基板又は石英基板であることを特徴とする薄膜集積回路装置の作製方法。 In any one of Claims 1 thru | or 9,
The method for manufacturing a thin film integrated circuit device, wherein the substrate is a glass substrate or a quartz substrate.
前記フッ化ハロゲンは、ＣｌＦ３（三フッ化塩素）であることを特徴とする薄膜集積回路装置の作製方法。 In any one of Claims 1 thru | or 10,
The method for manufacturing a thin film integrated circuit device, wherein the halogen fluoride is ClF 3 (chlorine trifluoride).
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記薄膜集積回路装置上に耐熱性を有する絶縁膜を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
前記分離された薄膜集積回路装置の上方又は下方にアンテナを形成することを特徴とする非接触型薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming an insulating film having heat resistance on the thin film integrated circuit device;
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
A method of manufacturing a non-contact type thin film integrated circuit device, wherein an antenna is formed above or below the separated thin film integrated circuit device.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記薄膜集積回路装置上に耐熱性を有する絶縁膜を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記複数の薄膜集積回路装置の上方に、複数の突起部を有するジグの当該突起部を、前記薄膜集積回路装置毎に接着し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
前記複数の薄膜集積回路装置に接着されたジグを取り外し、
前記分離された薄膜集積回路装置の上方又は下方にアンテナを形成することを特徴とする非接触型薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming an insulating film having heat resistance on the thin film integrated circuit device;
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Adhering the protrusions of the jig having a plurality of protrusions above the plurality of thin film integrated circuit devices for each of the thin film integrated circuit devices ,
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
Removing a jig bonded to the plurality of thin film integrated circuit devices;
A method for manufacturing a non-contact type thin film integrated circuit device, wherein an antenna is formed above or below the separated thin film integrated circuit device.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
アンテナが形成された基体で前記薄膜集積回路装置を包装することを特徴とする非接触型薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
A method of manufacturing a non-contact type thin film integrated circuit device, wherein the thin film integrated circuit device is packaged with a substrate on which an antenna is formed.
前記剥離層上に下地膜を形成し、
前記下地膜上に複数の薄膜集積回路装置を形成し、
前記複数の薄膜集積回路装置の境界に溝を形成し、
前記複数の薄膜集積回路装置の上方に、複数の突起部を有するジグの当該突起部を、前記薄膜集積回路装置毎に接着し、
前記溝にフッ化ハロゲンを含む気体又は液体を導入し、前記剥離層を除去することによって、前記複数の薄膜集積回路装置を分離し、
前記複数の薄膜集積回路装置に接着されたジグを取り外し、
アンテナが形成された基体で前記薄膜集積回路装置を包装することを特徴とする非接触型薄膜集積回路装置の作製方法。 Forming a release layer on the substrate,
Forming a base film on the release layer;
A plurality of thin film integrated circuit devices are formed on the base film,
Forming a groove at a boundary between the plurality of thin film integrated circuit devices;
Adhering the protrusions of the jig having a plurality of protrusions above the plurality of thin film integrated circuit devices for each of the thin film integrated circuit devices ,
Introducing a gas or liquid containing halogen fluoride into the groove and removing the release layer, the plurality of thin film integrated circuit devices are separated,
Removing a jig bonded to the plurality of thin film integrated circuit devices;
A method of manufacturing a non-contact type thin film integrated circuit device, wherein the thin film integrated circuit device is packaged with a substrate on which an antenna is formed.
前記ジグの接着は、ＵＶ光によって接着力が低下又は喪失する接着剤を用いて行なうことを特徴とする非接触型薄膜集積回路装置の作製方法。 In claim 13 or 15,
The method of manufacturing a non-contact type thin film integrated circuit device characterized in that the jig is bonded using an adhesive whose adhesive strength is reduced or lost by UV light.
前記耐熱性を有する絶縁膜は、シリコンと酸素との結合で骨格構造が構成され、置換基に少なくとも水素を含む材料、若しくは置換基にフッ素、アルキル基、または芳香族炭化水素のうち少なくとも一種を有する材料からなることを特徴とする非接触型薄膜集積回路装置の作製方法。 In claim 14 or 16,
The insulating film having heat resistance has a skeleton structure formed of a bond of silicon and oxygen, and includes at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A method for manufacturing a non-contact type thin film integrated circuit device, comprising:
前記剥離層は、シリコンを主成分として含むことを特徴とする非接触型薄膜集積回路装置の作製方法。 In any one of Claims 12 thru | or 17,
The method for manufacturing a non-contact thin film integrated circuit device, wherein the peeling layer contains silicon as a main component.
前記下地膜は、酸化珪素、窒化珪素、窒素を含む酸化珪素を含むことを特徴とする非接触型薄膜集積回路装置の作製方法。 In any one of claims 12 to 18,
The method for manufacturing a non-contact thin film integrated circuit device, wherein the base film includes silicon oxide, silicon nitride, and silicon oxide containing nitrogen.
前記溝はダイヤモンドスクライビング又はレーザースクライビングによって形成されることを特徴とする非接触型薄膜集積回路装置の作製方法。 In any one of claims 12 to 19,
The method of manufacturing a non-contact type thin film integrated circuit device, wherein the groove is formed by diamond scribing or laser scribing .
前記基板は、ガラス基板又は石英基板であることを特徴とする非接触型薄膜集積回路装置の作製方法。 In any one of claims 12 to 20,
The method for manufacturing a non-contact thin film integrated circuit device, wherein the substrate is a glass substrate or a quartz substrate.
前記フッ化ハロゲンは、ＣｌＦ３（三フッ化塩素）であることを特徴とする非接触型薄膜集積回路装置の作製方法。
In any one of claims 12 to 21,
The method for manufacturing a non-contact thin film integrated circuit device, wherein the halogen fluoride is ClF 3 (chlorine trifluoride).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004362339A JP5110766B2 (en) | 2003-12-15 | 2004-12-15 | Method for manufacturing thin film integrated circuit device and method for manufacturing non-contact type thin film integrated circuit device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003417317 | 2003-12-15 | ||
| JP2003417317 | 2003-12-15 | ||
| JP2004362339A JP5110766B2 (en) | 2003-12-15 | 2004-12-15 | Method for manufacturing thin film integrated circuit device and method for manufacturing non-contact type thin film integrated circuit device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005203762A JP2005203762A (en) | 2005-07-28 |
| JP2005203762A5 true JP2005203762A5 (en) | 2008-01-24 |
| JP5110766B2 JP5110766B2 (en) | 2012-12-26 |
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| JP2004362339A Expired - Fee Related JP5110766B2 (en) | 2003-12-15 | 2004-12-15 | Method for manufacturing thin film integrated circuit device and method for manufacturing non-contact type thin film integrated circuit device |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005122285A2 (en) | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
| TWI427802B (en) * | 2005-06-02 | 2014-02-21 | Univ Illinois | Printable semiconductor structures and related methods of making and assembling |
| US7176053B1 (en) * | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
| JP5196212B2 (en) * | 2006-03-02 | 2013-05-15 | セイコーエプソン株式会社 | Thin film device manufacturing method |
| JP2008047776A (en) * | 2006-08-18 | 2008-02-28 | Semiconductor Energy Lab Co Ltd | Semiconductor apparatus and manufacturing method thereof |
| US8463116B2 (en) | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
| KR101046064B1 (en) * | 2008-12-11 | 2011-07-01 | 삼성전기주식회사 | Thin Film Device Manufacturing Method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2970411B2 (en) * | 1993-08-04 | 1999-11-02 | 株式会社日立製作所 | Semiconductor device |
| JP3809733B2 (en) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | Thin film transistor peeling method |
| JP2000020665A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device |
| FR2796491B1 (en) * | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | METHOD FOR TAKING OFF TWO ELEMENTS AND DEVICE FOR IMPLEMENTING SAME |
| JP4748859B2 (en) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| JP2003142666A (en) * | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | Transfer method for element, method for manufacturing element, integrated circuit, circuit board, electrooptic device, ic card and electronic apparatus |
| JP4467215B2 (en) * | 2001-09-04 | 2010-05-26 | 富士通株式会社 | Method for forming porous insulating film and method for manufacturing semiconductor device |
| JP3956697B2 (en) * | 2001-12-28 | 2007-08-08 | セイコーエプソン株式会社 | Manufacturing method of semiconductor integrated circuit |
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