JP2005191517A - Material for airtight sealing and manufacturing method thereof - Google Patents
Material for airtight sealing and manufacturing method thereof Download PDFInfo
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- JP2005191517A JP2005191517A JP2004126841A JP2004126841A JP2005191517A JP 2005191517 A JP2005191517 A JP 2005191517A JP 2004126841 A JP2004126841 A JP 2004126841A JP 2004126841 A JP2004126841 A JP 2004126841A JP 2005191517 A JP2005191517 A JP 2005191517A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
本発明は、半導体素子等を搭載する金属製やセラミック製のパッケージを封止するための気密封止用材およびその製造方法に関する。 The present invention relates to a hermetic sealing material for sealing a metal or ceramic package on which a semiconductor element or the like is mounted, and a method for manufacturing the same.
一般に、水晶振動素子やＳＡＷフィルター等の各種半導体素子は、空気中の酸素や湿気により特性が悪化してしまう。そこで、これら半導体素子はセラミックパケージ内に気密封入した状態でＩＣチップとして電子機器に搭載されている。
そこで、半導体素子の気密封止法（ハーメチックシール）として、セラミックレイヤタイプ、サーディップタイプおよびＣＡＮタイプの３種類に分類されるが、本発明はそのセラミックレイヤタイプに属する。
In general, characteristics of various semiconductor elements such as a crystal vibrating element and a SAW filter are deteriorated by oxygen or moisture in the air. Therefore, these semiconductor elements are mounted on an electronic device as an IC chip in a state of being hermetically sealed in a ceramic package.
Therefore, the semiconductor element hermetic sealing method (hermetic seal) is classified into three types: ceramic layer type, surdip type, and CAN type, and the present invention belongs to the ceramic layer type.
セラミックレイヤタイプにおける従来のシール法として、半導体素子を搭載したパケージのベースとそのキャップとしての気密封止材であるコバール材や４２アロイ材等の合金板とをはんだで接合する方法がある。
そのコバール材、４２アロイ材は低膨張材であり、所定の形状片に加工後、Ｎｉめっきを施し、さらにＡｕめっき加工を施して気密封止材としている。
As a conventional sealing method in the ceramic layer type, there is a method in which a package base on which a semiconductor element is mounted and an alloy plate such as a Kovar material or 42 alloy material which is a hermetic sealing material as a cap thereof are joined by solder.
The Kovar material and 42 alloy material are low-expansion materials. After being processed into a predetermined shape piece, Ni plating is applied, and Au plating is further applied to form an airtight sealing material.
また、はんだ材料としては、Ａｕ−Ｓｎ合金材を用いている（例えば、特許文献１参照。）。
このような材料により、図４および図５に示す如く、メタライズされたパッケージ１０１のベース１０２と気密封止材１０３との間に上記はんだ１０４を置き、加熱溶融して封着している（例えば、特許文献１参照）。
As the solder material, an Au—Sn alloy material is used (for example, refer to Patent Document 1).
With such a material, as shown in FIGS. 4 and 5, the solder 104 is placed between the base 102 of the metallized package 101 and the hermetic sealing material 103 and heated and melted for sealing (for example, , See Patent Document 1).
また、Ａｕ系ろう材からなるろう材テープと、ＦｅＮｉ系材料からなる基材にＮｉめっき又はＮｉめっき及びＡｕめっきを施した基材テープを用いた技術がある（例えば、特許文献２参照。）
しかしながら、上述した従来の技術においては、パッケージと気密封止材との封着において、その気密封止材の封着面にめっき加工によりＮｉ層やＡｕ層を形成しているため、気密封止材とめっき層とは冶金的な結合がなく、剥がれ易いという問題がある。
また、めっき層は固く加工性が無く、厚さの厚いめっき層もできない。特に、長尺で厚いめっき層を作ることが困難であるという問題がある。
However, in the above-described conventional technology, since the Ni layer and the Au layer are formed by plating on the sealing surface of the hermetic sealing material when sealing the package and the hermetic sealing material, hermetic sealing is performed. There is a problem that the material and the plating layer do not have metallurgical bonding and are easily peeled off.
Further, the plating layer is hard and has no workability, and a thick plating layer cannot be formed. In particular, there is a problem that it is difficult to form a long and thick plating layer.
さらに、加熱溶融による封着加工において、はんだのＡｕ−Ｓｎが充分な溶融をせずに濡れ拡がりが得られないことがあり、完全な封止状態にならず、製品不良が発生するおそれがあるという問題がある。
また、特許文献１に記載されているように一旦シール用キャップ上ではんだのＡｕ−Ｓｎを溶融させると、溶融層の組織にＡｕリッチな相とＳｎリッチな相ができて凝固組織が不安定になり、脆くなって加工性が悪化するという問題がある。
Furthermore, in the sealing process by heating and melting, the solder Au-Sn may not be sufficiently melted to obtain a wet spread and may not be in a completely sealed state, possibly resulting in product defects. There is a problem.
Further, as described in Patent Document 1, once the solder Au—Sn is melted on the sealing cap, an Au-rich phase and an Sn-rich phase are formed in the structure of the molten layer, and the solidified structure is unstable. There is a problem that it becomes brittle and the workability deteriorates.
さらに、はんだのＡｕ−Ｓｎは２８０℃の共晶点で瞬時に溶融せず、そして、Ａｕめっき層のＡｕ成分を考慮し、Ａｕ−Ｓｎの組成を７８〜７９．５ｗｔ％に代えても溶融後の凝固組織が不安定になり、封着時に２８０℃の共晶点で瞬時に溶融せず、加熱溶融による封着加工において完全な封止状態が得られないという問題点もある。
本発明は、上記の問題点を解決するためになされたもので、封止状態においてばらつきが生じない手段を提供することを目的とする。
Furthermore, the solder Au—Sn does not melt instantaneously at the eutectic point of 280 ° C., and considering the Au component of the Au plating layer, even if the composition of Au—Sn is changed to 78-79.5 wt% There is also a problem in that the solidified structure afterwards becomes unstable, and does not melt instantaneously at the eutectic point of 280 ° C. during sealing, and a completely sealed state cannot be obtained in the sealing process by heat melting.
The present invention has been made to solve the above-described problems, and an object thereof is to provide means that does not cause variations in the sealed state.
そこで本発明は、コバール材や４２アロイ材等の低膨張係数を有する板材１に、当該板材の厚さ１に対し０．１〜０．２の比率となるＮｉ層２を形成し、その板材１の未複合面にＮｉ層４を形成し、その上にＮｉ層４の厚さ１に対し０．０８〜０．１５の比率で、尚且つ０．１〜１．２μｍとなるＡｕ層を形成して複合材７とし、さらにその上に複合材７の厚さ１に対し０．０８〜０．１５の比率となる７５〜８３ｗｔ％Ａｕ−Ｓｎ合金層を積層したことを特徴とする。ただし、Ｎｉ層２はコバール等の板材の防蝕用として用いるため必須のものではない。 Therefore, the present invention forms a Ni layer 2 having a ratio of 0.1 to 0.2 with respect to the thickness 1 of the plate material 1 on the plate material 1 having a low expansion coefficient such as Kovar material or 42 alloy material, and the plate material. An Ni layer 4 is formed on one uncomposited surface, and an Au layer having a ratio of 0.08 to 0.15 with respect to the thickness 1 of the Ni layer 4 and 0.1 to 1.2 μm is formed thereon. A composite material 7 is formed, and a 75 to 83 wt% Au—Sn alloy layer having a ratio of 0.08 to 0.15 with respect to the thickness 1 of the composite material 7 is further laminated thereon. However, the Ni layer 2 is not essential because it is used for corrosion protection of plate materials such as Kovar.
なお、コバール材等の板材１の厚さと複合するＮｉ板材の厚さの比が、板材１の厚さ１に対し０．１〜０．２の比率とした理由は、比率が０．１未満では、板材１に対するＮｉの耐食性効果が損なわれ、比率が０．２を超えると封着時の加熱により変形を生じやすくなり封止が困難となるからである。
また、Ｎｉ板材４の厚さ１に対しＡｕ板材を０．０８〜０．１５の比率とし、尚且つ０．１〜１．２μｍとした理由は、比率が０．０８未満ではＮｉ/コバール材等の板材/Ｎｉ/Ａｕの４層複合においてＡｕ層がＮｉ層へ拡散し、Ｎｉ/コバール材等の板材/Ｎｉ/Ａｕ/Ａｕ−Ｓｎの５層複合時にＡｕ−Ｓｎ層との接合が困難となり、比率が０．１５を超えるとＮｉ/コバール材等の板材/Ｎｉ/Ａｕ/Ａｕ−Ｓｎの５層複合材にそりを生じ易くなるからである。
The reason why the thickness ratio of the Ni plate material combined with the thickness of the plate material 1 such as the Kovar material is 0.1 to 0.2 with respect to the thickness 1 of the plate material 1 is that the ratio is less than 0.1. Then, the corrosion resistance effect of Ni on the plate material 1 is impaired, and if the ratio exceeds 0.2, deformation is likely to occur due to heating at the time of sealing, and sealing becomes difficult.
The reason why the Au plate material is set to a ratio of 0.08 to 0.15 and 0.1 to 1.2 μm with respect to the thickness 1 of the Ni plate material 4 is that the Ni / Kovar material is less than 0.08. In a four-layer composite of Ni / Au / Ni / Au, the Au layer diffuses into the Ni layer, and it is difficult to join the Au / Sn layer at the time of five-layer composite of Ni / Au / Au / Sn. When the ratio exceeds 0.15, warpage is likely to occur in a 5-layer composite material of Ni / Au / Au—Sn, such as a Ni / Kovar material.
また、Ａｕ−Ｓｎ合金層またはＡｕとＳｎの積層の組成を７５〜８３％とした理由は、７５％未満ではＡｕリッチな相が晶出し易くなり、８３％を超えるとＳｎリッチな金属間化合物相が晶出し易くなるからである。
また、複合材７の厚さ１に対しＡｕ−Ｓｎ合金層を０．０８〜０．１５の比率とした理由は、０．０８未満ではＮｉ/コバール材等の板材/Ｎｉ/Ａｕ/Ａｕ−Ｓｎの５層複合時に充分な接合強度が得られず、０．１５を超えると５層複合材にそりを生じ易くなるからである。
The reason why the composition of the Au—Sn alloy layer or Au / Sn laminate is 75 to 83% is that if it is less than 75%, an Au-rich phase is easily crystallized, and if it exceeds 83%, an Sn-rich intermetallic compound is formed. This is because the phase is easily crystallized.
The reason why the Au—Sn alloy layer is in a ratio of 0.08 to 0.15 with respect to the thickness 1 of the composite material 7 is that the plate material such as Ni / Kovar material / Ni / Au / Au—is less than 0.08. This is because sufficient bonding strength cannot be obtained when Sn is combined with five layers, and if it exceeds 0.15, warpage is likely to occur in the five-layer composite material.
また、Ｎｉ/コバール材等の板材/Ｎｉ/Ａｕ/Ａｕ−Ｓｎの５層複合材とした理由は、低膨張率のコバール材等の板材を芯とし、Ｎｉ板材２をコバール材等の板材の防蝕用とし、Ｎｉ板材４をＡｕ板材５のコバール材等の板材への拡散防止用として、コバール材等の板材の特性を維持しつつ、５層複合材としてそりが生じないように均等に接合したものであり、Ａｕ板材５は封着時にＡｕ−Ｓｎ合金層の充分な濡れ拡がりを生じさせるためである。 Also, the reason why the five-layer composite material of Ni / Kovar material / Ni / Au / Au—Sn is used is that the plate material such as Kovar material having a low expansion coefficient is used as the core, and the Ni plate material 2 is used as the plate material such as Kovar material. For anti-corrosion, Ni plate 4 is used to prevent diffusion of Au plate 5 into plate such as Kovar, and evenly bonded to prevent warpage as a 5-layer composite while maintaining the characteristics of plate such as Kovar. This is because the Au plate 5 causes sufficient wetting and spreading of the Au—Sn alloy layer during sealing.
なお、Ｎｉ/コバール材等の板材/Ｎｉ/Ａｕの４層複合材の複合加工における加熱によりＡｕ板材５がＮｉ板材４へ熱拡散しないようにＮｉ板材２とコバール材等の板材１の複合加工を行い、次にＮｉ/コバール材等の板材の複合材とＮｉ/Ａｕの複合材との複合加工を行う。
また、Ｎｉ/コバール材等の板材/Ｎｉ/Ａｕの４層複合材とＡｕ−Ｓｎ合金層との接合では、２００℃以上２８０℃未満の温度域で複合加工するためＡｕ板材５のＮｉ板材４への熱拡散は防止される。
It should be noted that the composite processing of the Ni plate material 2 and the plate material 1 such as Kovar material is prevented so that the Au plate material 5 is not thermally diffused into the Ni plate material 4 by heating in the composite processing of the plate material such as Ni / Kovar material / Ni / Au four-layer composite material. Next, composite processing of a composite material of a plate material such as a Ni / Kovar material and a composite material of Ni / Au is performed.
Further, in the joining of a plate material such as a Ni / Kovar material / Ni / Au four-layer composite material and an Au—Sn alloy layer, the Ni plate material 4 of the Au plate material 5 is subjected to composite processing in a temperature range of 200 ° C. or more and less than 280 ° C. Thermal diffusion to is prevented.
これにより、本発明は、封着加工においてＡｕ−Ｓｎ部の充分な溶融、拡がりが得られて完全な封止状態を得ることができることになる。即ち、本発明はめっき加工の欠点を解決するために、熱間圧延接合加工により封止用複合材を形成することにより、封止状態においてばらつきの生じない加工性の良い気密封止用材となる。
また、封着加工のアセンブリにおいて、Ａｕ−Ｓｎ合金片をはんだとして用いた場合に生じるワレ、カケ等の発生を防ぐことができる効果が得られる。
As a result, in the present invention, the Au—Sn portion can be sufficiently melted and spread in the sealing process, and a complete sealed state can be obtained. That is, in order to solve the drawbacks of the plating process, the present invention provides a hermetic sealing material with good workability that does not vary in the sealed state by forming a sealing composite material by hot rolling joining. .
Moreover, in the assembly of the sealing process, an effect that can prevent the occurrence of cracks, chipping, and the like that occur when an Au—Sn alloy piece is used as solder can be obtained.
以下に、本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
図１は本実施例を示す説明図である。
（１−１）板厚１ｍｍ、幅２０ｍｍのコバール板材１に、板厚０．１３ｍｍ、幅２０ｍｍのＮｉ板材２を８００℃の非酸化性雰囲気中で連続的に熱間圧延接合し、板厚０．９１ｍｍ、幅２０ｍｍの複合材３とした。
（１−２）板厚１ｍｍ、幅２０ｍｍのＮｉ板材４に、板厚０．１ｍｍ、幅２０ｍｍのＡｕ板材５を８００℃の非酸化性雰囲気中で連続的に熱間圧延接合し、板厚０．１１ｍｍ、幅２０ｍｍの複合材６とした。
（１−３）複合材３の未複合面に複合材６のＮｉ面４を接合面とし、８００℃の非酸化性雰囲気中で連続的に熱間圧延接合し、板厚０．１２ｍｍ、幅２０ｍｍの複合材７とした。
（１−４）板厚０．０１２ｍｍ、幅２０ｍｍの８０Ａｕ−Ｓｎ合金板材８を複合材７のＡｕ面５上に、２５０℃の非酸化性雰囲気中で連続的に熱間圧延接合し、板厚０．１ｍｍ、幅２０ｍｍの複合材９とした。この複合材９をプレス抜き加工により板厚０．１ｍｍで３ｍｍ角の気密封止用材１０Ａを得た。
FIG. 1 is an explanatory view showing this embodiment.
(1-1) A plate thickness of 0.1 mm and a width of 20 mm is continuously rolled by hot rolling in a non-oxidizing atmosphere at 800 ° C. to a Kovar plate 1 having a thickness of 1 mm and a width of 20 mm. The composite material 3 was 0.91 mm and the width was 20 mm.
(1-2) An Au plate 5 having a thickness of 0.1 mm and a width of 20 mm is continuously hot-rolled and bonded in a non-oxidizing atmosphere at 800 ° C. to a Ni plate 4 having a thickness of 1 mm and a width of 20 mm. A composite material 6 having a width of 0.11 mm and a width of 20 mm was obtained.
(1-3) The Ni surface 4 of the composite material 6 is joined to the uncomposited surface of the composite material 3 and continuously hot-rolled in a non-oxidizing atmosphere at 800 ° C., with a plate thickness of 0.12 mm and a width The composite material 7 was 20 mm.
(1-4) A 80Au—Sn alloy plate material 8 having a thickness of 0.012 mm and a width of 20 mm is continuously hot-rolled and joined in a non-oxidizing atmosphere at 250 ° C. on the Au surface 5 of the composite material 7. The composite material 9 was 0.1 mm thick and 20 mm wide. The composite material 9 was subjected to a press punching process to obtain an airtight sealing material 10A having a plate thickness of 0.1 mm and a 3 mm square.
また、上記（１−１）〜（１−４）の順と同様にして、基板となるコバール材１を４２アロイ材に換え、板厚０．１ｍｍで３ｍｍ角の気密封止用材１０Ｂを得た。
つぎに、比較のための従来例を示す。
（１） 板厚０．０７ｍｍ、幅２０ｍｍのコバール板材をプレス抜き加工により、３ｍｍ
角の基板片を得、その基板片に厚さ０．０１ｍｍのＮｉ層をめっき加工により全面に設け、さらに、そのＮｉめっき層上に厚さ０．００１ｍｍのＡｕ層をめっき加工により全面に設け、板厚０．０９ｍｍで３ｍｍ角のめっき複合片とした。
（２） 厚さ０．０１ｍｍ、３ｍｍ角の８０Ａｕ−Ｓｎ合金封着材料をめっき複合片上に
融着させ、板厚０．１ｍｍで３ｍｍ角の気密封止用材２１Ａを得た。
Further, in the same manner as the above (1-1) to (1-4), the Kovar material 1 serving as the substrate is replaced with a 42 alloy material to obtain a 3 mm square airtight sealing material 10B with a plate thickness of 0.1 mm. It was.
Next, a conventional example for comparison is shown.
(1) Kovar plate material with a plate thickness of 0.07mm and width of 20mm is 3mm by pressing
A square substrate piece is obtained, and a Ni layer having a thickness of 0.01 mm is provided on the entire surface of the substrate piece by plating. Further, an Au layer having a thickness of 0.001 mm is provided on the entire surface of the Ni plating layer by plating. A 3 mm square plated composite piece with a plate thickness of 0.09 mm was obtained.
(2) An 80Au—Sn alloy sealing material having a thickness of 0.01 mm and a 3 mm square was fused on the plated composite piece to obtain an airtight sealing material 21A having a thickness of 0.1 mm and a 3 mm square.
また、上記（１）〜（２）の順と同様にして、基板となるコバール材を４２アロイ材に換え、板厚０．１ｍｍで３ｍｍ角の気密封止用材２１Ｂを得た。
上記各気密封止用材１０Ａ、１０Ｂおよび２１Ａ、２１Ｂを図２、図３に示す如く、メタライズされたセラミックパッケージのベース１７上に約３００℃の炉により封着し、ヘリウムリーク試験により、封止状態を比較して結果を表１に示した。
Further, in the same manner as the above (1) and (2), the Kovar material used as the substrate was replaced with 42 alloy material, and a 3 mm square airtight sealing material 21B having a plate thickness of 0.1 mm was obtained.
Each of the airtight sealing materials 10A, 10B and 21A, 21B is sealed on a base 17 of a metallized ceramic package by a furnace at about 300 ° C. and sealed by a helium leak test as shown in FIGS. The state was compared and the result is shown in Table 1.
また、上記気密封止用材１０Ａ、１０Ｂの封着材部について、ワレ、カケの有無を外観評価項目として表１に併記した。 Moreover, about the sealing material part of the said airtight sealing material 10A, 10B, the presence or absence of crack and a crack was written together in Table 1 as an external appearance evaluation item.
１ コバール板材
２ Ｎｉ板材
３ 複合材
４ Ｎｉ板材
５ Ａｕ板材
６ 複合材
７ 複合材
８ ８０Ａｕ−Ｓｎ合金板材
９ 複合材
１０Ａ、１０Ｂ 気密封止用材
１６Ａ、１６Ｂ 気密封止用材
1 Kovar plate material 2 Ni plate material 3 Composite material 4 Ni plate material 5 Au plate material 6 Composite material 7 Composite material 8 80Au-Sn alloy plate material 9 Composite material 10A, 10B Airtight sealing material 16A, 16B Airtight sealing material
Claims (2)
Ｎｉ板材に、当該Ｎｉ板材の厚さ１に対し０．０８〜０．１５の比率で、尚且つ最終板厚が０．１〜１．２μｍとなるＡｕ板材を連続的に熱間圧延接合して複合材６とし、
さらに複合材６を複合材３の未複合面に連続的に熱間圧延接合して複合材７とし、
複合材７の厚さ１に対し０．０８〜０．１５の比率となる７５〜８３ｗｔ％Ａｕ−Ｓｎ合金板材を複合材７のＡｕ面上に、連続的に熱間圧延接合して複合材９とし、
この複合材９をプレス抜き加工により所望の形状にすることを特徴とする気密封止用材の製造方法。 A Ni plate material having a ratio of 0.1 to 0.2 with respect to the thickness 1 of the plate material is continuously hot rolled and joined to the plate material 1 having a low expansion coefficient such as Kovar material or 42 alloy material. 3
An Au plate having a ratio of 0.08 to 0.15 with respect to the thickness 1 of the Ni plate and a final thickness of 0.1 to 1.2 μm is continuously hot-rolled to the Ni plate. And composite material 6,
Furthermore, the composite material 6 is continuously hot-rolled and joined to the uncomposited surface of the composite material 3 to form a composite material 7.
A 75 to 83 wt% Au—Sn alloy plate material having a ratio of 0.08 to 0.15 with respect to the thickness 1 of the composite material 7 is continuously hot-rolled on the Au surface of the composite material 7 to form a composite material. 9 and
A method of manufacturing a material for hermetic sealing, wherein the composite material 9 is formed into a desired shape by press punching.
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| JP2004126841A JP4427379B2 (en) | 2003-12-03 | 2004-04-22 | Hermetic sealing material and manufacturing method thereof |
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| JP2004126841A JP4427379B2 (en) | 2003-12-03 | 2004-04-22 | Hermetic sealing material and manufacturing method thereof |
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| US8035800B2 (en) | 2006-03-13 | 2011-10-11 | Nikon Corporation | Exposure apparatus, maintenance method, exposure method, and method for producing device |
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| CN103028804A (en) * | 2012-12-28 | 2013-04-10 | 汕尾市栢林电子封装材料有限公司 | Method for covering preformed soldering lug on chip sealing cover plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8035800B2 (en) | 2006-03-13 | 2011-10-11 | Nikon Corporation | Exposure apparatus, maintenance method, exposure method, and method for producing device |
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