JP2005191503A5 - - Google Patents

Download PDF

Info

Publication number
JP2005191503A5
JP2005191503A5 JP2003434733A JP2003434733A JP2005191503A5 JP 2005191503 A5 JP2005191503 A5 JP 2005191503A5 JP 2003434733 A JP2003434733 A JP 2003434733A JP 2003434733 A JP2003434733 A JP 2003434733A JP 2005191503 A5 JP2005191503 A5 JP 2005191503A5
Authority
JP
Japan
Prior art keywords
laser beam
wafer
exposure method
laser
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003434733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005191503A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003434733A priority Critical patent/JP2005191503A/ja
Priority claimed from JP2003434733A external-priority patent/JP2005191503A/ja
Priority to EP04030471A priority patent/EP1548501A3/en
Priority to US11/022,399 priority patent/US20050190801A1/en
Publication of JP2005191503A publication Critical patent/JP2005191503A/ja
Publication of JP2005191503A5 publication Critical patent/JP2005191503A5/ja
Withdrawn legal-status Critical Current

Links

JP2003434733A 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置 Withdrawn JP2005191503A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003434733A JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置
EP04030471A EP1548501A3 (en) 2003-12-26 2004-12-22 Laser unit, exposure apparatus for micro-lithiographie and associated method
US11/022,399 US20050190801A1 (en) 2003-12-26 2004-12-23 Laser unit, exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003434733A JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置

Publications (2)

Publication Number Publication Date
JP2005191503A JP2005191503A (ja) 2005-07-14
JP2005191503A5 true JP2005191503A5 (enExample) 2007-03-08

Family

ID=34545111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003434733A Withdrawn JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置

Country Status (3)

Country Link
US (1) US20050190801A1 (enExample)
EP (1) EP1548501A3 (enExample)
JP (1) JP2005191503A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4580338B2 (ja) * 2004-12-23 2010-11-10 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、エキシマ・レーザ、およびデバイス製造方法
JP2007250947A (ja) 2006-03-17 2007-09-27 Canon Inc 露光装置および像面検出方法
JP2007329432A (ja) * 2006-06-09 2007-12-20 Canon Inc 露光装置
KR100809717B1 (ko) * 2007-01-12 2008-03-06 삼성전자주식회사 더블 패터닝된 패턴의 전기적 특성을 콘트롤할 수 있는반도체 소자 및 그의 패턴 콘트롤방법
JP2009141154A (ja) 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
US9715180B2 (en) 2013-06-11 2017-07-25 Cymer, Llc Wafer-based light source parameter control

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106426A (ja) * 1987-10-19 1989-04-24 Canon Inc 露光装置
US5191374A (en) * 1988-11-17 1993-03-02 Nikon Corporation Exposure control apparatus
JP2844696B2 (ja) * 1989-07-24 1999-01-06 株式会社ニコン レーザ処理装置
US5343270A (en) * 1990-10-30 1994-08-30 Nikon Corporation Projection exposure apparatus
US6252647B1 (en) * 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
JPH07120326A (ja) * 1993-10-22 1995-05-12 Komatsu Ltd 波長検出装置
EP1452894A3 (en) * 1996-09-02 2005-02-09 Nippon Telegraph and Telephone Corporation Optical signal processing apparatus and optical signal processing method
JP4102457B2 (ja) * 1997-05-09 2008-06-18 株式会社小松製作所 狭帯域化レーザ装置
US6721340B1 (en) * 1997-07-22 2004-04-13 Cymer, Inc. Bandwidth control technique for a laser
US6529531B1 (en) * 1997-07-22 2003-03-04 Cymer, Inc. Fast wavelength correction technique for a laser
US6078599A (en) * 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
US6496528B2 (en) * 1999-09-03 2002-12-17 Cymer, Inc. Line narrowing unit with flexural grating mount
JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
DE10146583A1 (de) * 2001-09-21 2003-04-17 Siemens Ag Vorrichtung und Verfahren zum optischen Abtasten einer Substratscheibe

Similar Documents

Publication Publication Date Title
TWI459440B (zh) 微影應用中之雙型顯影用之全面性曝光製程
JP2003131002A5 (enExample)
EP1286218A3 (en) Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence
TWI265381B (en) Method for coating a substrate for EUV lithography and substrate with photoresist layer
WO2003102696A3 (en) A method for photolithography using multiple illuminations and a single fine feature mask
JPS63159837A (ja) 照明装置
JP2019517137A5 (enExample)
EP1670041A4 (en) METHOD AND APPARATUS FOR EXPOSURE, AND METHOD FOR MANUFACTURING ASSOCIATED DEVICE
DE60213728D1 (de) Bildaufzeichnungsmedium
ATE448565T1 (de) Lichtquelleneinheit, optische beleuchtungsvorrichtung und belichtungsvorrichtung
JPH11150063A5 (enExample)
JP2005532680A5 (enExample)
JP2005191503A5 (enExample)
JP5361239B2 (ja) 露光装置及びデバイス製造方法
CN1542555A (zh) 照明器控制的影调反转印刷
EP1298494A3 (en) High numerical aperture projection system for microlithography
JP2005509849A5 (enExample)
JP6407296B2 (ja) マイクロリソグラフィ投影露光系の照明系及びそのような照明系を作動させる方法
JP2005243904A5 (enExample)
GB2375403B (en) Optical proximity correction
JP2000260698A5 (enExample)
GB0025247D0 (en) Optical proximity correction
JP2004363571A5 (enExample)
JPS60158449A (ja) 露光装置
JP2002277914A (ja) レーザ光の高調波発生装置、及びそれを用いた露光装置、並びにレーザ光の高調波発生方法、及びそれを用いた露光方法、それを用いたデバイス製造方法